公开(公告)号：JP2001009799A

公开(公告)日：2001-01-16

申请号：JP2000123335

申请日：2000-03-22

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO

IPC: B81C1/00 ,  B81B3/00 ,  G11B5/55 ,  G11B5/596 ,  G11B21/10 ,  G11B21/21 ,  H02N1/00

Abstract: PROBLEM TO BE SOLVED: To increase a practical bias voltage value. SOLUTION: This method is to manufacture a fine integrated structure, generally a micro actuator for a hard disc drive unit and includes steps to form inside connecting regions 32a, 32b in a substrate 31 of a semiconductor material, to form a monocrystal epitaxial region 33, to form downward biting regions 35a, 35b to directly make contact with an inside connecting region in the monocrystal epitaxial region 33, to form an insulating material region 41 in a constitutional part of the monocrystal epitaxial region 33 and to form upward biting regions 46, 47 to directly make contact with the downward biting regions in a poly-crystalline part by growing a pseudo epitaxial region formed of a poly-crystalline part 45' above the constitutional part of the monocrystal epitaxial region 33 and a monocrystal part 45" at the other place. Consequently, PN connection does not exist in the inside of the poly-crystalline part 45' of the pseudo epitaxial region, and the structure has high breakdown voltage.

公开(公告)号：JP2000246700A

公开(公告)日：2000-09-12

申请号：JP2000054393

申请日：2000-02-25

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  MASTROMATTEO UBALDO

IPC: B81C99/00 ,  B23K10/00 ,  B81C1/00 ,  B81C5/00

Abstract: PROBLEM TO BE SOLVED: To reduce danger of breaking a suspension part of a moving part with the fine structure by forming a temporary fixing and supporting structure for temporarily unifying a moving area with a fixed area, and eliminating the temporary fixing and supporting structure with a non-mechanical eliminating method after a stage that the mechanical pressure is applied. SOLUTION: A fusible element 20 for fixing a moving arm 11 to a fixed area 10 is provided. This fusible element 20 is formed of a pair of walls 21 extended from two adjacent areas of a fixed area 10 to an end of a fixed arm 13 formed into a wedge-like shape. When the operation for generating the pressure in a rotor 3 is concluded, the fusible element 20 is eliminated by supplying the high current to the walls 21 through a metal track 24 and a conductive area 22. With this structure, breakdown of the rotor 3 on a board 5 during the work for fitting and adhering a head is prevented.

公开(公告)号：JP2000243051A

公开(公告)日：2000-09-08

申请号：JP2000046099

申请日：2000-02-23

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO

IPC: G11B5/596 ,  G11B5/48 ,  G11B21/21

Abstract: PROBLEM TO BE SOLVED: To provide a highly reliable reading/writing unit capable of reducing the cost by forming a microactuator integrally to a monolithic main body. SOLUTION: The hard disk reading/writing unit 30 which is provided with a suspension structural body, a coupling integral to the suspension structural body and the microactuator integral to this coupling are formed in the monolithic main body part 31 consisting of semiconductor material. The monolithic main body part 31 is provided with a 1st part 31a for housing integrated electronic parts 33 and a 2nd part 31b for housing the coupling and microactuator.

公开(公告)号：JPH11325916A

公开(公告)日：1999-11-26

申请号：JP30241798

申请日：1998-10-23

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  FORONI MARIO ,  FERRERA MARCO ,  MONTANINI PIETRO

IPC: G01C19/56 ,  G01C19/574 ,  G01C19/5769 ,  G01P15/08 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84 ,  G01P9/04

Abstract: PROBLEM TO BE SOLVED: To realize a vibration type integrated angular velocity sensor having high level performance and reliability at a low cost and its manufacturing method. SOLUTION: This angular velocity sensor device comprises a pair of mobile masses 2a, 2b which are formed in the epitaxial layer and are anchored to one another and to remainder of the device by anchorage elements. The mobile masses 2a, 2b are symmetrical with one another, and have mobile excitation electrodes 6a which are intercalated with respective fixed excitation electrodes 7a1 , 7a2 and mobile detection electrodes 6b which are intercalated with fixed detection electrodes 7b1 , 7b2 . The mobile and fixed excitation electrodes extend in a first direction, and the mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

公开(公告)号：JPH11204730A

公开(公告)日：1999-07-30

申请号：JP30102998

申请日：1998-10-22

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  MANFREDI ARMANDO ,  VIGNA BENEDETTO

IPC: H01L21/822 ,  H01L21/02 ,  H01L23/522 ,  H01L23/64 ,  H01L27/04 ,  H01L27/06

Abstract: PROBLEM TO BE SOLVED: To provide an integrated inductor with high selectivity Q, and a method for manufacturing this. SOLUTION: An integrated inductor 40 is constituted of a coil 21b formed in a second metallic level 21. The coil 21b is supported by a bracket 20a isolated from a semiconductor material substrate 3 by an area gap 28 obtained by removing a sacrifice area formed in a first metal level 16, and extended at the upper part of the semiconductor material substrate 3. The bracket 20a is carried through a supporting area 20b, and the supporting area 20b is arranged in the periphery of the bracket 20a, and they are mutually isolated by an opening 36 connected with the air gap 28. A thick oxide area 4 is extended at the upper part of the semiconductor material substrate 3 and at the lower part of the air gap 28, so that electrostatic connection between the inductor and the semiconductor material substrate 3 can be reduced. Therefore, the inductor with high selectivity can be manufactured by a process having interchangeability with an existing minimum electronic technique process.

公开(公告)号：JPH11142270A

公开(公告)日：1999-05-28

申请号：JP19212398

申请日：1998-07-07

Applicant: ST MICROELECTRONICS SRL

Inventor： FERRARI PAOLO ,  VIGNA BENEDETTO ,  VILLA FLAVIO

IPC: G01L9/04 ,  G01L9/00 ,  H01L41/08

Abstract: PROBLEM TO BE SOLVED: To provide an integrated piezoresistive pressure sensor having a diaphragm made of a polycrystalline semiconductor material. SOLUTION: This pressure sensor has a semiconductor material singlecrystal substrate 21, a semiconductor material layer 28 on this substrate 21, a gap 55 arranged between the substrate 21 and semiconductor layer 28, and at least one opening part 53 which extends between the reverse outside surface 52 of the substrate 21 and the gap 55. This semiconductor material layer 28 is formed of a polycrystal area 29 forming the diaphragm above the gap 55 and another single-crystal material layer 30. The piezoresistance element 46 extends above the semiconductor layer 28 and is insulated from there at the lateral limit setting edge of the diaphragm 29 by a dielectric layer 45 and mutually connected to form a Wheaston bridge, so pressure applied onto the sensor can be measured from its unbalance.

公开(公告)号：JPH11108874A

公开(公告)日：1999-04-23

申请号：JP15452098

申请日：1998-06-03

Applicant: ST MICROELECTRONICS SRL

Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  MASTROMATTEO UBALDO

IPC: G01N27/12

Abstract: PROBLEM TO BE SOLVED: To provide a chemical-resistant gas sensor not requiring silicon excavation work and a process for producing the same. SOLUTION: An integrated semiconductor device 1 has thermal insulating regions 3, 11, a heat conductive region 25 composed of material quality high in heat conductivity, a passivation oxide layer 30 and a gas responding element 34 in a mutually superposed state. The heat conductive region 25 defines the selective route going toward the gas responding element 34 because of the heat formed by a heating element 20 and, therefore, at a time of the operation of the device 1, the heat diffused toward substrates 2, 3 can be neglected.

公开(公告)号：WO2007042336A2

公开(公告)日：2007-04-19

申请号：PCT/EP2006064298

申请日：2006-07-14

Applicant: ST MICROELECTRONICS SRL ,  COMBI CHANTAL ,  VIGNA BENEDETTO ,  ZIGLIOLI FEDERICO GIOVANNI ,  BALDO LORENZO ,  MAGUGLIANI MANUELA ,  LASALANDRA ERNESTO ,  RIVA CATERINA

Inventor： COMBI CHANTAL ,  VIGNA BENEDETTO ,  ZIGLIOLI FEDERICO GIOVANNI ,  BALDO LORENZO ,  MAGUGLIANI MANUELA ,  LASALANDRA ERNESTO ,  RIVA CATERINA

IPC: B81B7/02

CPC classification number: B81B7/0061 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C1/0023 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/1461 ,  H01L2924/3025 ,  H04R1/04 ,  H04R19/005 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In a substrate-level assembly (22), a device substrate (20) of semiconductor material has a top face (20a) and houses a first integrated device (1; 16), in particular provided with a buried cavity (3), formed within the device substrate (20), and with a membrane (4), suspended over the buried cavity (3) in the proximity of the top face (20a). A capping substrate (21) is coupled to the device substrate (20) above the top face (20a) so as to cover the first integrated device (1; 16), in such a manner that a first empty space (25) is provided above the membrane (4). Electrical-contact elements (28a, 28b) electrically connect the integrated device (1; 16) with the outside of the substrate-level assembly (22). In one embodiment, the device substrate (20) integrates at least a further integrated device (1', 10) provided with a respective membrane (4'); and a further empty space (25'), fluidically isolated from the first empty space (25), is provided over the respective membrane (4') of the further integrated device (1', 10).

Abstract translation: 在衬底级组件（22）中，半导体材料的器件衬底（20）具有顶面（20a）并容纳第一集成器件（1; 16），所述第一集成器件特别设置有埋入腔（3） 在器件衬底（20）内并且具有在顶面（20a）附近悬置在掩埋腔（3）上的膜（4）。 封盖衬底（21）在顶面（20a）上方与器件衬底（20）耦合，以便以这样的方式覆盖第一集成器件（1; 16）：提供第一空的空间（25） 在膜（4）上方。 电接触元件（28a，28b）将集成装置（1; 16）与衬底级组件（22）的外部电连接。 在一个实施例中，所述装置基底（20）集成了至少另一个集成装置（1'，10），所述集成装置设置有相应的膜（4'）; 并且在另一集成装置（1'，10）的相应的膜（4'）上设置与第一空的空间（25）流体隔离的另一个空的空间（25'）。

公开(公告)号：WO2007017515A2

公开(公告)日：2007-02-15

申请号：PCT/EP2006065163

申请日：2006-08-08

Applicant: ST MICROELECTRONICS SRL ,  FONTANELLA LUCA ,  PASOLINI FABIO ,  VIGNA BENEDETTO ,  CHIESA ENRICO

Inventor： FONTANELLA LUCA ,  PASOLINI FABIO ,  VIGNA BENEDETTO ,  CHIESA ENRICO

CPC classification number: G06F3/0433

Abstract: In a device (2) for determining the position (P 1 (X, y) ) of a touch on a contact surface (Ia) , a plurality of vibration sensors (4) are configured to detect mechanical vibrations (9) generated by the touch on the contact surface (1a) and to generate corresponding vibration signals, and a processing circuit (6) is connected to the vibration sensors (4) and is configured to determine the touch position (P 1 (x, y) ) via a time-of-f light algorithm, based on differences between times of detection (t 1 , t 2 , t 3 ) of the mechanical vibrations (9) by the vibration sensors (4) .

Abstract translation: 在用于确定接触表面（Ia）上的触摸的位置（P 1（X，y））的设备（2）中，多个振动传感器（4）被配置为检测机械 （1a）上的触摸产生的振动（9）并产生相应的振动信号，处理电路（6）连接到振动传感器（4），并被配置为确定触摸位置（P _{1 ，t 2 ）之间的差异，通过f时间光算法， ）通过振动传感器（4）检测机械振动（9）。}

公开(公告)号：WO2007017515A8

公开(公告)日：2007-10-25

申请号：PCT/EP2006065163

申请日：2006-08-08

Applicant: ST MICROELECTRONICS SRL ,  FONTANELLA LUCA ,  PASOLINI FABIO ,  VIGNA BENEDETTO ,  CHIESA ENRICO

Inventor： FONTANELLA LUCA ,  PASOLINI FABIO ,  VIGNA BENEDETTO ,  CHIESA ENRICO

IPC: G06F3/043

CPC classification number: G06F3/0433

Abstract: In a device (2) for determining the position (P 1 (x, y) ) of a touch on a contact surface (1a), a plurality of vibration sensors (4) are configured to detect mechanical vibrations (9) generated by the touch on the contact surface (1a) and to generate corresponding vibration signals, and a processing circuit (6) is connected to the vibration sensors (4) and is configured to determine the touch position (P 1 (x, y) ) via a time-of-f light algorithm, based on differences between times of detection (t 1 , t 2 , t 3 ) of the mechanical vibrations (9) by the vibration sensors (4).

Abstract translation: 在用于确定接触表面（1a）上的触摸的位置（P 1> 1（x，y））的装置（2）中，多个振动传感器（4）被配置为检测机械 通过在接触表面（1a）上的触摸产生的振动（9）并产生相应的振动信号，并且处理电路（6）连接到振动传感器（4），并被配置为确定触摸位置（P _{1 （x，y） 由振动传感器（4）产生机械振动（9）。}