公开(公告)号：US20180362330A9

公开(公告)日：2018-12-20

申请号：US15024711

申请日：2014-09-19

Applicant: MOTION ENGINE INC.

Inventor： Robert Mark Boysel

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2207/012 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/095 ,  B81C1/00238 ,  B81C2201/013 ,  B81C2203/0792

Abstract: A MEMS and a method of manufacturing MEMS components are provided. The method includes providing a MEMS wafer stack including a top cap wafer, a MEMS wafer and optionally a bottom cap wafer. The MEMS wafer has MEMS structures patterned therein. The MEMS wafer and the cap wafers include insulated conducting channels forming insulated conducting pathways extending within the wafer stack. The wafer stack is bonded to an integrated circuit wafer having electrical contacts on its top side, such that the insulated conducting pathways extend from the integrated circuit wafer to the outer side of the top cap wafer. Electrical contacts on the outer side of the top cap wafer are formed and are electrically connected to the respective insulated conducting channels of the top cap wafer. The MEMS wafer stack and the integrated circuit wafer are then diced into components having respective sealed chambers and MEMS structures housed therein.

公开(公告)号：US20180288549A1

公开(公告)日：2018-10-04

申请号：US16001032

申请日：2018-06-06

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Jung-Huei Peng ,  Chia-Hua Chu ,  Chun-wen Cheng ,  Chin-Yi Cho ,  Li-Min Hung ,  Yao-Te Huang

IPC: H04R31/00 ,  B81C1/00 ,  H04R19/04 ,  H04R19/00

CPC classification number: H04R31/003 ,  B81C1/00158 ,  B81C2201/0125 ,  B81C2201/013 ,  B81C2201/053 ,  B81C2203/036 ,  H04R19/005 ,  H04R19/04 ,  H04R31/006 ,  H04R2201/003 ,  H04R2307/027

Abstract: The present disclosure provides one embodiment of an integrated microphone structure. The integrated microphone structure includes a first silicon substrate patterned as a first plate. A silicon oxide layer formed on one side of the first silicon substrate. A second silicon substrate bonded to the first substrate through the silicon oxide layer such that the silicon oxide layer is sandwiched between the first and second silicon substrates. A diaphragm secured on the silicon oxide layer and disposed between the first and second silicon substrates such that the first plate and the diaphragm are configured to form a capacitive microphone.

公开(公告)号：US20180244514A1

公开(公告)日：2018-08-30

申请号：US15957058

申请日：2018-04-19

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. JAHNES ,  Anthony K. STAMPER

IPC: B81B3/00 ,  G06F17/50 ,  B81C1/00

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US10062517B2

公开(公告)日：2018-08-28

申请号：US15374719

申请日：2016-12-09

Applicant: wiSpry, Inc.

Inventor： Arthur S. Morris, III ,  Dana DeReus ,  Norito Baytan

IPC: H01G5/16 ,  B81C1/00 ,  B81B3/00 ,  H01G7/00 ,  H01G5/18

CPC classification number: H01G5/16 ,  B81B3/0008 ,  B81B3/0016 ,  B81B3/0051 ,  B81B2201/0221 ,  B81C1/00166 ,  B81C1/00476 ,  B81C2201/0109 ,  B81C2201/013 ,  H01G5/18 ,  H01G7/00

Abstract: Systems, devices, and methods for micro-electro-mechanical system (MEMS) tunable capacitors can include a fixed actuation electrode attached to a substrate, a fixed capacitive electrode attached to the substrate, and a movable component positioned above the substrate and movable with respect to the fixed actuation electrode and the fixed capacitive electrode. The movable component can include a movable actuation electrode positioned above the fixed actuation electrode and a movable capacitive electrode positioned above the fixed capacitive electrode. At least a portion of the movable capacitive electrode can be spaced apart from the fixed capacitive electrode by a first gap, and the movable actuation electrode can be spaced apart from the fixed actuation electrode by a second gap that is larger than the first gap.

公开(公告)号：US20180230001A1

公开(公告)日：2018-08-16

申请号：US15434242

申请日：2017-02-16

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kai-Fung Chang ,  Lien-Yao Tsai ,  Len-Yi Leu

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0005 ,  B81B2207/095 ,  B81C1/00269 ,  B81C1/00912 ,  B81C1/0092 ,  B81C1/00952 ,  B81C1/00984 ,  B81C2201/013 ,  B81C2201/0149 ,  B81C2203/019 ,  B81C2203/035

Abstract: A semiconductor device includes a first substrate, a second substrate, an anti-stiction layer and at least one metal layer. The first substrate includes a microelectromechanical systems (MEMS) structure. The second substrate is bonded to the first substrate and disposed over the MEMS structure. The second substrate comprises at least one through hole. The anti-stiction layer is disposed on a surface of the MEMS structure. The at least one metal layer is disposed over the second substrate and covers the at least one through hole of the second substrate.

公开(公告)号：US10011477B2

公开(公告)日：2018-07-03

申请号：US15437727

申请日：2017-02-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Christopher V. Jahnes ,  Anthony K. Stamper

IPC: H01P1/10 ,  B81B3/00 ,  B81C1/00 ,  G06F17/50

CPC classification number: B81B3/0072 ,  B81B3/0021 ,  B81B2201/01 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00365 ,  B81C1/00476 ,  B81C1/00619 ,  B81C1/00626 ,  B81C1/00666 ,  B81C2201/0109 ,  B81C2201/013 ,  B81C2201/0167 ,  B81C2201/017 ,  B81C2203/0136 ,  B81C2203/0172 ,  G06F17/5068 ,  G06F17/5072 ,  H01H1/0036 ,  H01H57/00 ,  H01H59/0009 ,  H01H2057/006 ,  H01L41/1136 ,  H01L2924/0002 ,  Y10S438/937 ,  Y10T29/42 ,  Y10T29/435 ,  Y10T29/49002 ,  Y10T29/49105 ,  Y10T29/49121 ,  Y10T29/49126 ,  Y10T29/4913 ,  Y10T29/49155 ,  Y10T29/5313 ,  H01L2924/00

Abstract: A method of forming a Micro-Electro-Mechanical System (MEMS) includes forming a lower electrode on a first insulator layer within a cavity of the MEMS. The method further includes forming an upper electrode over another insulator material on top of the lower electrode which is at least partially in contact with the lower electrode. The forming of the lower electrode and the upper electrode includes adjusting a metal volume of the lower electrode and the upper electrode to modify beam bending.

公开(公告)号：US09938133B2

公开(公告)日：2018-04-10

申请号：US15097808

申请日：2016-04-13

Applicant: Infineon Technologies Dresden GmbH

Inventor： Thoralf Kautzsch ,  Mohsin Nawaz ,  Alfons Dehe ,  Heiko Froehlich ,  Alessia Scire ,  Steffen Bieselt

IPC: G01L9/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0021 ,  B81B2201/0257 ,  B81B2203/0127 ,  B81B2203/0136 ,  B81C1/00166 ,  B81C1/00182 ,  B81C2201/013

Abstract: According to an embodiment, a method of forming a MEMS transducer includes forming a transducer frame in a layer of monocrystalline silicon, where forming the transducer frame includes forming a support portion adjacent a cavity and forming a first set of comb-fingers extending from the support portion. The method of forming a MEMS transducer further includes forming a spring support from an anchor to the support portion and forming a second set of comb-fingers in the layer of monocrystalline silicon. The second set of comb-fingers is interdigitated with the first set of comb-fingers.

公开(公告)号：US20180093882A1

公开(公告)日：2018-04-05

申请号：US15698459

申请日：2017-09-07

Applicant: SEIKO EPSON CORPORATION

Inventor： Masashi YOSHIIKE

IPC: B81B7/00 ,  B41J2/14 ,  B41J2/16 ,  B81C1/00

CPC classification number: B81B7/007 ,  B41J2/14 ,  B41J2/14233 ,  B41J2/1607 ,  B41J2/161 ,  B41J2/1621 ,  B41J2/1626 ,  B41J2/1628 ,  B41J2/1629 ,  B41J2/1631 ,  B41J2002/14362 ,  B41J2002/14491 ,  B81B2201/052 ,  B81B2207/07 ,  B81C1/00301 ,  B81C2201/013

Abstract: There is provided a MEMS device including: a substrate having a resin portion that protrudes from one surface thereof and is made of a resin, in which the first wiring extends along a first direction on the one surface from a position overlapping the resin portion to a position deviating from the resin portion, and in which a width of the resin portion is equal to or larger than a width of the first wiring covering the resin portion in a second direction intersecting the first direction.

公开(公告)号：US20180002163A1

公开(公告)日：2018-01-04

申请号：US15543700

申请日：2016-01-14

Applicant: Motion Engine Inc.

Inventor： Robert Mark Boysel

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0315 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2203/0118 ,  G01C19/5783 ,  G01C21/16

Abstract: A three dimensional (3D) micro-electro-mechanical system (MEMS) device is provided. The device comprises a central MEMS wafer, and top and bottom cap wafers. The MEMS wafer includes a MEMS structure, such as an inertial sensor. The 5 top cap wafer, the bottom cap wafer and the MEMS wafers are stacked along a stacking axis and together form at least one hermetic cavity enclosing the MEMS structure. At least one of the top cap wafer and the bottom cap wafer is a silicon-on- insulator (SOI) cap wafer comprising a cap device layer, a cap handle layer and a cap insulating layer interposed between the cap device layer and the cap handle layer. At 10 least one electrically conductive path extends through the SOI cap wafer, establishing an electrical convection between an outer electrical contact provided on the SOI cap wafer and the MEMS structure.

公开(公告)号：US09850125B2

公开(公告)日：2017-12-26

申请号：US15041886

申请日：2016-02-11

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Chia-Hua Chu ,  Chun-Wen Cheng

IPC: B81B7/02 ,  B81C1/00 ,  H01L23/00 ,  H01L23/10 ,  H01L25/00

CPC classification number: B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/025 ,  B81B2201/0264 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81C1/00182 ,  B81C1/00238 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/0792 ,  H01L23/10 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/291 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/83193 ,  H01L2224/83805 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2224/3012 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2924/00

Abstract: A method embodiment includes providing a MEMS wafer comprising an oxide layer, a MEMS substrate, a polysilicon layer. A carrier wafer comprising a first cavity formed using isotropic etching is bonded to the MEMS, wherein the first cavity is aligned with an exposed first portion of the polysilicon layer. The MEMS substrate is patterned, and portions of the sacrificial oxide layer are removed to form a first and second MEMS structure. A cap wafer including a second cavity is bonded to the MEMS wafer, wherein the bonding creates a first sealed cavity including the second cavity aligned to the first MEMS structure, and wherein the second MEMS structure is disposed between a second portion of the polysilicon layer and the cap wafer. Portions of the carrier wafer are removed so that first cavity acts as a channel to ambient pressure for the first MEMS structure.