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    Ⅲ족 질화물 결정의 제조 방법
    34.
    发明公开
    Ⅲ족 질화물 결정의 제조 방법 有权
    生产第三类元素氮化物晶体的方法

    公开(公告)号：KR1020090082367A

    公开(公告)日：2009-07-30

    申请号：KR1020097008369

    申请日：2007-11-14

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미즈하라나호 ,  우에마츠고지 ,  미야나가미치마사 ,  다니자키게이스케 ,  나카하타히데아키 ,  나카하타세이지 ,  오카히사다쿠지

    IPC: C30B25/20 ,  C30B29/38 ,  H01L21/205

    CPC classification number: H01L29/045 ,  C30B19/02 ,  C30B23/025 ,  C30B25/20 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/02433 ,  H01L21/0254 ,  H01L21/02658 ,  H01L29/2003 ,  Y10T428/24752

    Abstract: A process for producing a Group III element nitride crystal (20) having a main plane (20m) orienting in any specific direction other than {0001}. The process comprises: a step in which Group III element nitride crystal substrates (10p) and (10q) respectively having main planes (10pm) and (10qm) orienting in the specific direction are cut out of a Group III element nitride bulk crystal (1); a step in which these substrates (10p) and (10q) are closely arranged side by side so that the main planes (10pm) and (10qm) of these substrates (10p) and (10q) are parallel to each other and their planes facing [0001] are oriented in the same direction; and a step in which a Group III element nitride crystal (20) is grown on the main planes (10pm) and (10qm) of these substrates (10p) and (10q).

    Abstract translation: 制造具有以{0001}以外的特定方向取向的主面（20m）的III族元素氮化物晶体（20）的制造方法。 该方法包括：从III族元素氮化物块状晶体（1）中切出分别具有在特定方向取向的主面（10pm）和（10qm）的III族元素氮化物晶体基板（10p）和（10q）的步骤 ）; 这些基板（10p）和（10q）彼此紧密排列的步骤，使得这些基板（10p）和（10q）的主平面（10pm）和（10qm）彼此平行并且其面向 沿同一方向取向; 以及在这些基板（10p）和（10q）的主平面（10μm）和（10qm）上生长III族元素氮化物晶体（20）的工序。

    ⅠⅠⅠ족 질화물 반도체 결정의 성장 방법 및 ⅠⅠⅠ족 질화물 반도체 결정의 성장 장치
    35.
    发明公开
    ⅠⅠⅠ족 질화물 반도체 결정의 성장 방법 및 ⅠⅠⅠ족 질화물 반도체 결정의 성장 장치 有权
    用于III族氮化物半导体晶体生长的III族氮化物半导体晶体和生长装置的方法

    公开(公告)号：KR1020090069241A

    公开(公告)日：2009-06-30

    申请号：KR1020080133364

    申请日：2008-12-24

    Applicant: 스미토모덴키고교가부시키가이샤

    Inventor： 미야나가미치마사 ,  미즈하라나호 ,  다니자키게이스케 ,  사토잇세이 ,  다케우치히사오 ,  나카하타히데아키

    IPC: C30B23/00 ,  C30B29/38

    CPC classification number: C30B23/005 ,  C30B29/403 ,  Y10T117/10

    Abstract: A method and an apparatus for growing a group III nitride semiconductor crystal are provided to improve a growth speed of the group III nitride semiconductor crystal by growing the group III nitride semiconductor crystal in a chamber including a heat shielding unit. A group III nitride semiconductor crystal growing apparatus(100) includes a chamber(101) and a heating unit(125). The chamber includes a first space, a second space, and a heat shielding unit(110). A raw material(13) including the group III nitride semiconductor is arranged in the first space. The group III nitride semiconductor crystal(15) grows in the second space. The heat shielding unit is positioned between a first space and a second space. The heat shield unit shield heat radiation from the raw material. The heating unit sublimates the material arranged in the first space. The heat emissivity of the heat shield unit is lower than the heat emissivity of the group III nitride semiconductor crystal.

    Abstract translation: 提供了用于生长III族氮化物半导体晶体的方法和装置，以通过在包括热屏蔽单元的室中生长III族氮化物半导体晶体来改善III族氮化物半导体晶体的生长速度。 III族氮化物半导体晶体生长装置（100）包括室（101）和加热单元（125）。 所述室包括第一空间，第二空间和热屏蔽单元（110）。 包括III族氮化物半导体的原料（13）布置在第一空间中。 III族氮化物半导体晶体（15）在第二空间中生长。 隔热单元位于第一空间和第二空间之间。 隔热单元屏蔽来自原材料的热辐射。 加热单元使布置在第一空间中的材料升华。 隔热单元的发热率低于III族氮化物半导体晶体的发热率。

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