Abstract:
An apparatus for tracking maximum power according to the present invention includes a battery; a voltage controller for adjusting the magnitude of first power output from the battery according to a resistor selected from among a plurality of resistors, and generating a comparison signal according to the difference in magnitude between operating voltage of the first power having the magnitude adjusted according to the selected resistor and reference voltage; a switching part connected between the battery and a load to adjust the magnitude of the operating voltage according to the magnitude variation of the comparison signal in response to first and second switching control signals; a switching controller for generating the first and second switching control signals to reduce the magnitude between the operating voltage and the reference voltage according to the comparison signal to a value within a predetermined tolerance; and a maximum power controller for calculating the number of first operations obtained by counting the number of occurrences of the first switching control signal or the second switching control signal for a predetermined time if the comparison signal is reduced to a value within the predetermined tolerance. The maximum power controller compares the number of the first operations and the number of second operations obtained by counting the magnitude of the maximum power at the load according to stored internal operating voltage, and generates a selection signal used to change the selection of the resistors according to the comparison result to adjust the magnitude of the first power.
Abstract:
A horizontal insulated gate bipolar transistor according to an embodiment of the present invention comprises: a first conductive semiconductor substrate; a second conductive drift region formed on the upper part of the first conductive semiconductor substrate; a gate electrode arranged on the first conductive semiconductor substrate; a first emitter electrode which is spaced apart from the gate electrode and is arranged on the first conductive semiconductor substrate to be adjacent to one side surface of the gate electrode; a collector electrode which is spaced apart from the gate electrode and is arranged on a second conductive semiconductor substrate to be adjacent to the other side surface of the gate electrode; a second emitter electrode arranged between the gate electrode and the collector electrode; and a trench insulation film formed between the second emitter electrode and the collector electrode in the second conductive drift region.
Abstract:
반도체 소자의 제조 방법이 제공된다. 반도체 소자의 제조 방법은 제1 도전형의 반도체 기판에 트렌치를 형성하는 것, 트렌치의 측벽 및 바닥면 상에 제2 도전형의 도펀트를 포함하는 트렌치 도펀트 함유막을 형성하는 것, 트렌치 도펀트 함유막 내의 도펀트를 반도체 기판으로 확산시키는 것, 및 트렌치 도펀트 함유막을 제거하는 것을 포함한다.