-
公开(公告)号：KR100467555B1
公开(公告)日：2005-01-24
申请号：KR1020020075291
申请日：2002-11-29
Applicant: 한국전자통신연구원
IPC: H01L27/04
CPC classification number: H01G7/06 , H01G4/1227
Abstract: Provided is a microwave tunable device including a ferroelectric/dielectric (Ba1-x,Srx)TiO3 (BST) thin film that can reduce dielectric loss of a ferroelectric/dielectric BST thin film. The microwave tunable device of the present research includes: a substrate; and a ferroelectric/dielectric (Ba1-x,Srx)TiO3 (BST) thin film of a (111) direction which is formed on the substrate. The technology of this research embodies a microwave tunable device by using a ferroelectric/dielectric BST thin film grown in the (111) direction to overcome the limitation of conventional technologies and improve the problem of dielectric loss.
Abstract translation: 提供一种微波可调器件，其包括能够降低铁电/电介质BST薄膜的介电损耗的铁电/电介质（Ba1-x，Srx）TiO3（BST）薄膜。 本研究的微波可调器件包括：基板; 以及形成在衬底上的（111）方向的铁电/电介质（Ba1-x，Srx）TiO3（BST）薄膜。 这项研究的技术体现了微波可调器件，通过使用在（111）方向上生长的铁电/电介质BST薄膜克服了传统技术的限制并改善了介电损耗问题。
-
公开(公告)号：KR1020010057751A
公开(公告)日：2001-07-05
申请号：KR1019990061149
申请日：1999-12-23
Applicant: 한국전자통신연구원
IPC: H01S3/08
Abstract: PURPOSE: An ultra high frequency modulation laser optical generator of complex resonator structure is provided to secure technology to generate continuous wave laser by adjusting polarization controller from single laser optical generator. CONSTITUTION: An ultra high frequency modulation laser optical generator is composed of a ring type optical fiber laser resonator(10), a linear optical fiber laser resonator(20), and 50% optical fiber combinator(30) to combine two resonator(10,20). The ring type optical fiber laser resonator(10) is composed of a 10m light amplified fiber(LAF)(11) for optical amplification, a 20m distribution compensation fiber(DSF)(12) for nonlinear polarization effect, an optical direction controller(13), and a polarization controller(14). The linear optical fiber laser resonator(20) is composed of a mirror(23a,23b) having real 100% reflectivity which is arranged at both end, a 20m distribution compensation fiber(DSF), and a polarization controller(21).
Abstract translation: 目的：提供一种复合谐振器结构的超高频调制激光光学发生器，通过调整单激光光发生器的偏振控制器，确保技术生成连续波激光。 构成：超高频调制激光光发生器由环形光纤激光谐振器（10），线性光纤激光谐振器（20）和50％的光纤组合器（30）构成，将两个谐振器（10， 20）。 环型光纤激光谐振器（10）由用于光放大的10m光放大光纤（LAF）（11），用于非线性偏振效应的20m分布补偿光纤（DSF）（12），光学方向控制器（13） ）和偏振控制器（14）。 线性光纤激光谐振器（20）由布置在两端的实际100％反射率的反射镜（23a，23b），20m分布补偿光纤（DSF）和偏振控制器（21）构成。
-
公开(公告)号：KR101620030B1
公开(公告)日：2016-05-12
申请号：KR1020090112510
申请日：2009-11-20
Applicant: 한국전자통신연구원
Abstract: 본발명은전기방사법을이용한유기물패턴형성방법에관한것으로, 본발명에따른유기물패턴형성방법은제 1 기판상에전기방사법으로나노급또는마이크로급선을형성하는단계; 그위에제 2 기판을접합하는단계; 및상기제 1 기판상에형성된나노급또는마이크로급선을제 2 기판상으로표면에너지차이를이용하여전이하는단계를포함한다. 이와같은유기물패턴형성방법은전도성기판뿐만아니라절연성기판상에도나노급또는마이크로미터급패턴을형성할수 있다.
-
公开(公告)号：KR1020150081026A
公开(公告)日：2015-07-13
申请号：KR1020140000574
申请日：2014-01-03
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/78618 , H01L29/78696
Abstract: 박막트랜지스터가제공된다. 박막트랜지스터는기판, 상기기판위에형성된활성층, 상기활성층위에형성된게이트절연막, 상기게이트절연막위에형성된게이트전극, 상기게이트전극양쪽의상기활성층에형성된도핑영역, 및상기게이트전극양측의상기기판상에서로이격되고상기도핑영역과직접접촉하는소스전극및 드레인전극을포함한다.
Abstract translation: 本发明提供一种薄膜晶体管。 薄晶体管包括衬底; 形成在所述基板上的有源层; 形成在有源层上的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 形成在栅电极两侧的有源层上的掺杂区域; 以及源电极和漏电极在栅极两侧的衬底上彼此分离，并与掺杂区域直接接触。 因此，本发明能够提供没有接触工艺的自配置型半导体薄膜晶体管结构。
-
公开(公告)号：KR1020140076111A
公开(公告)日：2014-06-20
申请号：KR1020120144276
申请日：2012-12-12
Applicant: 한국전자통신연구원
IPC: H01L29/786 , H01L21/336
CPC classification number: H01L29/7869 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/66969 , H01L29/78696 , H01L29/0665
Abstract: A transistor according to an embodiment of the present invention may include an oxide semiconductor layer with a nano-layered structure. The oxide semiconductor layer may include at least one first nano-layer and at least on second nano-layer. The first nano-layer and the second nano-layer are alternately stacked. A channel with higher electron mobility at the interface between the first nano-layer and the second nano-layer as the first nano-layer and the second nano-layer contain different materials. The transistor of the present invention may have high reliability.
Abstract translation: 根据本发明实施例的晶体管可以包括具有纳米层状结构的氧化物半导体层。 氧化物半导体层可以包括至少一个第一纳米层和至少第二纳米层。 第一纳米层和第二纳米层交替堆叠。 在第一纳米层和第二纳米层之间的界面处作为第一纳米层和第二纳米层含有不同材料的具有较高电子迁移率的通道。 本发明的晶体管可以具有高的可靠性。
-
Patent Agency Ranking
公开(公告)号：KR101283685B1
公开(公告)日：2013-07-08
申请号：KR1020090113128
申请日：2009-11-23
Applicant: 한국전자통신연구원
CPC classification number: G01N27/127
Abstract: 본 발명은 환경가스 센서 및 그의 제조방법에 관한 것이다. 본 발명에 따른 환경가스 센서는 절연 기판; 상기 절연 기판 상에 형성된 금속 전극; 및 상기 금속 전극 상에 이종의 나노섬유가 서로 직교하게 정렬된 감지층을 포함하며, 이종의 나노섬유가 서로 직교하여 정렬된 감지층으로 2종의 가스를 동시에 감지할 수 있다.
환경가스, 센서, 2종의 가스, 나노섬유-
公开(公告)号：KR1020130022438A
公开(公告)日：2013-03-07
申请号：KR1020110083618
申请日：2011-08-22
Applicant: 한국전자통신연구원
CPC classification number: Y02E10/50 , C23C16/325 , C23C16/24 , C23C16/50
Abstract: PURPOSE: A formation method of a silicon carbide film with nanocrystalline silicon is provided to increase the luminous efficiency of the silicon carbide film applied to the next generation solar cell field by forming the silicon carbide film with the nanocrystalline silicon. CONSTITUTION: A formation method of a silicon carbide film with nanocrystalline silicon uses plasma gas including methane(CH4) gas and silane(SiH) gas. The silicon carbide film(110) comprises silicon carbide(SiC) or silicon oxycarbide(SiOC). The silicon carbide film and the nanocrystalline silicon(120) are formed simultaneously.
Abstract translation: 目的：提供具有纳米晶硅的碳化硅膜的形成方法，以通过与纳米晶硅形成碳化硅膜来增加施加到下一代太阳能电池领域的碳化硅膜的发光效率。 构成：具有纳米晶硅的碳化硅膜的形成方法使用包括甲烷（CH 4）气体和硅烷（SiH））气体在内的等离子体气体。 碳化硅膜（110）包括碳化硅（SiC）或碳氧化硅（SiOC）。 碳化硅膜和纳米晶硅（120）同时形成。
-
公开(公告)号：KR101224544B1
公开(公告)日：2013-01-22
申请号：KR1020090118868
申请日：2009-12-03
Applicant: 한국전자통신연구원
Abstract: 본 발명은 전기 방사 장치 및 이를 이용한 정렬된 나노 섬유 제조방법에 관한 것으로, 본 발명에 따른 전기 방사 장치는 나노섬유 원료가 되는 고분자 용액을 토출하는 방사 노즐부; 상기 방사 노즐부로부터 방사되는 섬유를 수집하기 위한 한 쌍의 접지 전극; 상기 방사 노즐부와 접지 전극 사이에 전압을 인가하기 위한 제 1 고전압 직류 발생기; 상기 방사 노즐부와 상기 한 쌍의 접지 전극 사이에 위치된 노즐에서 방사되는 섬유의 분산을 방지하기 위해 전기장 렌즈; 상기 전기장 렌즈를 제어하는 제 2 고전압 직류 발생기; 및 상기 접지 전극을 스위칭하기 위한 스위칭 수단를 포함한다. 이와 같은 구조의 전기 방사 장치를 이용함에 따라서, 전기방사 노즐로부터 방사되는 나노섬유의 방사방향을 조절할 수 있으며, 이로 인하여 정렬된 나노섬유를 제조할 수 있다.
전기방사장치, 전기장 렌즈, 스위칭-
公开(公告)号：KR1020120106521A
公开(公告)日：2012-09-26
申请号：KR1020110069863
申请日：2011-07-14
Applicant: 한국전자통신연구원
Abstract: PURPOSE: A flexible flat cable and a manufacturing method thereof are provided to minimize distortion and interference of signals by surrounding a wire core with shield coating layers made of metal components, and insulation coating layers made of parylene polymers. CONSTITUTION: A flexible flat cable(100) includes insulation coating layers(20) made of parylene polymers and shield coating layers(30) made of metal components surrounding a wire core(10). The insulation coating layer increases insulation properties between the wire cores. The insulation coating layer reduces an RC delay of a signal. The shield coating layer shields electromagnetic waves between the wire cores. The flexible flat cable maximizes the transfer efficiency of the wire core.
Abstract translation: 目的：提供柔性扁平电缆及其制造方法，以通过围绕具有由金属部件制成的屏蔽涂层的线芯和由聚对二甲苯聚合物制成的绝缘涂层来最小化信号的变形和干扰。 构成：柔性扁平电缆（100）包括由聚对二甲苯聚合物制成的绝缘涂层（20）和围绕线芯（10）的金属组件制成的屏蔽涂层（30）。 绝缘涂层增加了导线芯之间的绝缘性能。 绝缘涂层降低了信号的RC延迟。 屏蔽涂层屏蔽线芯之间的电磁波。 柔性扁平电缆使线芯的传输效率最大化。
-
公开(公告)号：KR1020110061753A
公开(公告)日：2011-06-10
申请号：KR1020090118259
申请日：2009-12-02
Applicant: 한국전자통신연구원
IPC: H01L31/04
Abstract: PURPOSE: A solar battery using a semiconducting nano fiber and a manufacturing method thereof are provided to realize a p-n junction structure of high density using a semiconducting nano fiber, thereby increasing energy generating efficiency. CONSTITUTION: A grid type lower metal electrode(202) is formed on a transparent insulating substrate. A high density semiconductor nano fiber non-woven fabric layer is formed on the grid type lower metal electrode using a semiconducting nano fiber. A transparent semiconductor film is formed on a high density semiconductor nano fiber non-woven fabric layer using a transparent oxide semiconductor material for forming a p-n junction with a semiconductor nano fiber. A grid type upper metal electrode(501) is formed on the transparent semiconductor film.
Abstract translation: 目的：提供一种使用半导体纳米纤维的太阳能电池及其制造方法，以使用半导体纳米纤维实现高密度的p-n结结构，从而提高能量产生效率。 构成：在透明绝缘基板上形成栅格型下部金属电极（202）。 使用半导体纳米纤维在栅格型下部金属电极上形成高密度半导体纳米纤维无纺布层。 在使用半导体纳米纤维形成p-n结的透明氧化物半导体材料的高密度半导体纳米纤维无纺布层上形成透明半导体膜。 栅极型上部金属电极（501）形成在透明半导体膜上。
-
-
-
-
-
-
-
-
-
Search Results
64
records
(took 0.024 seconds)
