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公开(公告)号：KR100429296B1
公开(公告)日：2004-04-29
申请号：KR1020020054210
申请日：2002-09-09
Applicant: 한국전자통신연구원
IPC: H01L21/338
CPC classification number: H01L21/67207 , H01L29/66848
Abstract: A deposition apparatus comprises: first chamber having first substrate holder, halogen lamp, and substrate door; second chamber having temperature-adjustable second substrate holder, middle film, elevating portion, and metal deposition portion; pumping portions connected to first and second chambers; gas injecting portions; and connecting portion. Deposition apparatus comprises: first chamber having first substrate holder provided in the lower portion of the first chamber for mounting sample, halogen lamp provided in the upper portion of the first chamber for irradiating lamp light to the sample, and substrate door where sample passes; second chamber having temperature-adjustable second substrate holder provided in the lower portion of the second chamber for mounting the sample, middle film provided in the middle portion of the second chamber for dividing the chamber into upper and lower portions, elevating portion attached to second substrate holder for moving the second substrate holder into upper or lower portion on the basis of the middle film, and metal deposition portion provided in the upper portion of the second chamber; pumping portions connected to first and second chambers for adjusting the pressures; gas injecting portions connected to first and second chambers for injecting gas at a certain amount; and connecting portion for allowing the sample to reciprocally move between first and second chambers. The connecting portion includes a gate valve. An independent claim is also included for a method of manufacturing semiconductor device using the deposition apparatus comprising: cleaning a substrate where semiconductor structure is formed using first chamber; moving the substrate into second chamber after cleaning the substrate; and depositing a metal film (10).
Abstract translation: 沉积设备包括：具有第一衬底支架，卤素灯和衬底门的第一室; 具有温度可调节的第二衬底支架，中间膜，升降部分和金属沉积部分的第二室; 泵送部分，连接到第一和第二腔室; 气体注入部分; 和连接部分。 沉积装置包括：第一腔室，具有设置在第一腔室的下部用于安装样品的第一基板支架，设置在第一腔室的上部用于向样品照射灯光的卤素灯，以及样品通过的基板门; 设置在第二腔室的下部用于安装样品的具有温度可调节的第二基板支架的第二腔室，设置在第二腔室的中间部分中的中间膜，用于将腔室分成上部分和下部分，提升部分连接到第二基板 以所述中间膜为基准将所述第二基板保持器移动到上部或下部的保持器;以及设置在所述第二室的上部的金属沉积部分; 连接到第一和第二腔室的泵部分用于调节压力; 连接到第一和第二室的气体喷射部分，用于喷射一定量的气体; 以及连接部分，用于使样品在第一室和第二室之间往复移动。 连接部分包括闸阀。 还包括使用该沉积设备制造半导体器件的方法的独立权利要求，该方法包括：使用第一室清洁形成半导体结构的衬底; 在清洁基板之后将基板移入第二腔室; 并沉积金属膜（10）。
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公开(公告)号：KR1020030062076A
公开(公告)日：2003-07-23
申请号：KR1020020002497
申请日：2002-01-16
Applicant: 한국전자통신연구원
IPC: H01L21/336 , B82Y40/00
CPC classification number: H01L29/78648 , H01L21/84 , H01L27/1203 , H01L29/78654
Abstract: PURPOSE: A method for fabricating a nano transistor is provided to arbitrarily control a threshold voltage of a n-type metal oxide semiconductor(NMOS) transistor and a p-type metal oxide semiconductor(PMOS) transistor by applying a voltage to a silicon-on-insulator(SOI) substrate. CONSTITUTION: The first impurity ions are implanted into a predetermined region of the SOI substrate having a silicon substrate(21), a buried oxide layer and a silicon layer to form the first well in a predetermined region on the silicon substrate. The second impurity ion implantation process is performed on another region of the SOI substrate to form the second well in another region on the silicon substrate. After a predetermined region of the silicon layer is removed, the first and second gate electrodes having a gate insulation layer(28) and a conductive layer are formed in a predetermined region on the remaining silicon layer. The first and second sources/drains are formed in a predetermined region on the remaining silicon layer. An insulation layer(33) is formed and partially etched to form the first contact hole exposing the first and second wells. A predetermined region of the insulation layer is etched to form the second contact hole exposing the first gate electrode, the second gate electrode and the source/drain. A metal layer is formed to fill the first and second contact holes and is patterned to form a metal interconnection(35).
Abstract translation: 目的：提供一种制造纳米晶体管的方法，通过向硅上施加电压来任意地控制n型金属氧化物半导体（NMOS）晶体管和p型金属氧化物半导体（PMOS）晶体管的阈值电压 - 绝缘体（SOI）衬底。 构成：将第一杂质离子注入到具有硅衬底（21），掩埋氧化物层和硅层的SOI衬底的预定区域中，以在硅衬底上的预定区域中形成第一阱。 在SOI衬底的另一区域上执行第二杂质离子注入工艺以在硅衬底上的另一区域中形成第二阱。 在除去硅层的预定区域之后，在剩余硅层上的预定区域中形成具有栅极绝缘层（28）和导电层的第一和第二栅电极。 第一和第二源极/漏极形成在剩余硅层上的预定区域中。 形成绝缘层（33）并部分蚀刻以形成暴露第一和第二阱的第一接触孔。 蚀刻绝缘层的预定区域以形成暴露第一栅极电极，第二栅极电极和源极/漏极的第二接触孔。 形成金属层以填充第一和第二接触孔并被图案化以形成金属互连（35）。
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公开(公告)号：KR101762634B1
公开(公告)日：2017-08-03
申请号：KR1020130135484
申请日：2013-11-08
Applicant: 한국전자통신연구원
Abstract: 본발명은열전소자및 그의제조방법을개시한다. 그의방법은, 기판상에나노와이어들을형성하는단계와, 상기나노와이어들상에장벽층을형성하는단계와, 상기장벽층 상에벌크층을형성하는단계와, 상기기판의아래에하부전극과, 상기벌크층의위에상부전극을형성하는단계를포함한다.
Abstract translation: 本发明公开了一种热电装置及其制造方法。 该方法包括在衬底上形成纳米线，在纳米线上形成阻挡层，在阻挡层上形成体层，在衬底上形成下层， 并在体层上形成上电极。
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公开(公告)号：KR1020150053493A
公开(公告)日：2015-05-18
申请号：KR1020130135488
申请日：2013-11-08
Applicant: 한국전자통신연구원
CPC classification number: H01L35/32
Abstract: 본발명은열전소자및 그의제조방법을개시한다. 그의소자는, 기판과, 상기기판의일측상에각기분리되어배치된제 1 및제 2 전극들과, 상기제 1 및제 2 전극들로부터분리되어상기기판의타측상에형성된공통전극과, 상기공통전극및 제 1 전극사이및 상기공통전극과상기제 2 전극사이를각각연결하는제 1 및제 2 레그들과, 상기공통전극및 상기제 1 전극사이와상기공통전극및 상기제 2 전극사이의상기제 1 및제 2 레그들및 상기기판을덮는제 1 및제 2 장벽패턴들을포함한다.
Abstract translation: 本发明提供一种热电装置及其制造方法。 其装置包括：基板; 第一和第二电极单独地布置在基板的一侧上; 形成在所述基板的另一侧上的公共电极，与所述第一和第二电极分离; 分别连接公共电极和第一电极以及公共电极和第二电极的第一和第二腿部; 以及覆盖公共电极和第一电极之间，公共电极和第二电极之间的第一和第二支腿以及基板的第一和第二屏障图案。
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Patent Agency Ranking
公开(公告)号：KR1020140005074A
公开(公告)日：2014-01-14
申请号：KR1020120117228
申请日：2012-10-22
Applicant: 한국전자통신연구원
IPC: G01N25/18
Abstract: The present invention relates to a thermal conductivity measuring device and a measuring method thereof. The thermal conductivity measuring device given in the present invention includes; a first structure which is connected to one end of a sample and receives heat from a heat source; a second structure which is connected to the other end of the sample; a first stage which is connected to the first structure and supports the first structure; a second stage which is connected to the second structure and supports the second structure; a connection unit which connects the first and the second stage; and a measuring unit which measures the temperatures of the first and the second structure and the first and the second stage. The measuring unit calculates the thermal conductivity of the sample using the temperatures of the first and the second structure and the first and the second stage and the amount of heat supplied from the heat source. The thermal conductivity measuring device and the measuring method thereof are able to improve the reliability of measurement as correcting the temperature variance of the stages due to the thermal flow from the stages in consideration of the measuring environment. [Reference numerals] (110) First structure; (120) Second structure; (150) First stage; (160) Second stage; (170) Connection unit; (180) Measuring unit
Abstract translation: 本发明涉及一种热导率测量装置及其测量方法。 本发明中给出的热导率测量装置包括： 第一结构，其连接到样品的一端并从热源接收热量; 第二结构，其连接到样品的另一端; 第一阶段，其连接到第一结构并支撑第一结构; 第二级，其连接到第二结构并支撑第二结构; 连接第一和第二阶段的连接单元; 以及测量单元，其测量第一和第二结构以及第一和第二阶段的温度。 测量单元使用第一和第二结构以及第一和第二阶段的温度和从热源供应的热量来计算样品的热导率。 考虑到测量环境，热导率测量装置及其测量方法能够提高测量的可靠性，以校正由于来自级的热流的级的温度变化。 （附图标记）（110）第一结构; （120）第二结构; （150）第一阶段; （160）第二阶段; （170）连接单元; （180）测量单元
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公开(公告)号：KR101311528B1
公开(公告)日：2013-09-25
申请号：KR1020090122964
申请日：2009-12-11
Applicant: 한국전자통신연구원
CPC classification number: H02J7/35 , G05F1/67 , Y02E10/566 , Y02E10/58
Abstract: 본 발명은 태양전지 전력추출 장치와 방법에 관한 것으로 태양전지로부터 최대의 전력을 얻기 위한 것이다. 본 발명에 따른 태양전지의 최대전력 추출 장치는 태양에너지로부터 전력을 생성하는 태양전지, 태양전지로부터 최대전력이 추출되도록 하기 위한 펄스 폭 변조신호를 발생하는 최대전력추출부, 및 펄스 폭 변조신호에 따라 태양전지로부터 발생하는 전류의 크기를 조절하는 DC-DC 변환부를 포함한다.
태양전지, 최대전력, 추출-
公开(公告)号：KR1020130065942A
公开(公告)日：2013-06-20
申请号：KR1020110132563
申请日：2011-12-12
Applicant: 한국전자통신연구원
Inventor： 장문규
IPC: H01L35/02
CPC classification number: H01L35/32
Abstract: PURPOSE: A thermoelectric element enhances the electrical conductivity between a heat absorption unit and a heat radiating unit and lowers the thermal conductivity at the same time, thereby improving the thermoelectric efficiency. CONSTITUTION: A common electrode(101) absorbs the heat. A first electrode and a second electrode are formed on the same plane as a common electrode and emit the heat. A N-leg(107) is connected between the common electrode and the first electrode, and supplies the electron. A P-leg(109) is connected between the common electrode and the second electrode, and supplies a hole. The common electrode and a barrier material for suppressing the heat conduction between the first and the second electrode are formed in the N-leg and the P-leg.
Abstract translation: 目的：热电元件增强了吸热单元和散热单元之间的导电性，同时降低了热导率，从而提高了热电效率。 构成：公共电极（101）吸收热量。 第一电极和第二电极形成在与公共电极相同的平面上并发射热量。 N腿（107）连接在公共电极和第一电极之间，并提供电子。 P腿（109）连接在公共电极和第二电极之间，并提供孔。 用于抑制第一和第二电极之间的热传导的公共电极和阻挡材料形成在N形腿和P形腿中。
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公开(公告)号：KR101243869B1
公开(公告)日：2013-03-20
申请号：KR1020090086271
申请日：2009-09-14
Applicant: 한국전자통신연구원
CPC classification number: H02J7/0068 , H01M10/46 , Y10T307/25 , Y10T307/305 , Y10T307/391 , Y10T307/414
Abstract: 본 발명의 에너지 및 전력관리 집적회로장치는 각각의 에너지 변환 소스로부터 에너지를 수확하여 전기 에너지로 변환하는 복수의 에너지 변환 소자; 에너지 변환 소자로부터 변환되는 전기 에너지를 안정화된 에너지로 변환하는 에너지관리 집적회로; 에너지관리 집적회로에 의해 변환된 에너지 또는 전력을 저장하는 저장소자; 저장소자에 저장된 전력을 입력 받아 분배하는 전력관리 집적회로; 및 전력관리 집적회로에 의해 분배된 전력을 소비하는 복수의 출력 부하소자를 포함한다. 따라서, 친환경적으로 에너지를 수확하여 배터리 교체 없이 에너지를 반영구적으로 사용할 수 있다.
에너지 전력 관리 집적 기술, 에너지관리 기술, 전력관리 기술, 에너지 수확및 변환, 자가충전전원 모듈-
公开(公告)号：KR101152222B1
公开(公告)日：2012-06-08
申请号：KR1020100024621
申请日：2010-03-19
Applicant: 한국전자통신연구원
IPC: H01L35/00
Abstract: 본발명은플렉서블열전소자, 이를포함하는무선센서노드및 그제조방법에관한것으로서, 플렉서블열전소자에있어서, 교대로배열된복수의 P형반도체및 복수의 N형반도체; 이웃한상기 P형반도체와상기 N형반도체의상면을연결하는상부금속; 이웃한상기 P형반도체와상기 N형반도체의하면을연결하되, 상기상부금속과는엇갈려배열되는하부금속; 상기복수의 P형반도체중 적어도하나의 P형반도체와연결된 P형금속; 및상기복수의 N형반도체중 적어도하나의 N형반도체와연결된 N형금속을포함한다.
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