公开(公告)号：FI57673B

公开(公告)日：1980-05-30

申请号：FI269373

申请日：1973-08-29

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME JOHN ,  GAMBINO RICHARD JOSEPH

IPC: G02F1/09 ,  C22C19/00 ,  C22C45/04 ,  G02F1/00 ,  G11B11/10 ,  G11B11/105 ,  G11C11/14 ,  G11C13/06 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F10/14 ,  H01F10/16 ,  H01F10/10

公开(公告)号：IT7926086D0

公开(公告)日：1979-09-28

申请号：IT2608679

申请日：1979-09-28

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  KIESSLING JOHN BRADFORD ,  PERLMAN DAVID JACOB ,  TYNAN EUGENE EDWARD ,  GUTFELD ROBERT JACOB VON

IPC: H01R43/00 ,  B23K26/22 ,  H01L21/60 ,  H01R43/02 ,  H05K3/32 ,  B23K

Abstract: 1. A method for bonding a metallic wire (13) to a microcircuit conductor (11), characterized in that it includes the steps of : a. applying said wire to the conductor, b. maintaining said wire in close contact with said conductor, c. applying a focussed energy beam (14) directed towards a point at least tangentially in contact with said wire, and forming a hole in said conductor, and d. applying additional energy to portions of said wire adjacent to said point for melting the wire metal so that the metal flows into said hole (15) to form an electrical contact between the wire and the conductor.

公开(公告)号：CA1033457A

公开(公告)日：1978-06-20

申请号：CA278383

申请日：1977-05-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME J ,  GAMBINO RICHARD J

公开(公告)号：CA1022672A

公开(公告)日：1977-12-13

申请号：CA179894

申请日：1973-08-29

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  CUOMO JEROME J ,  GAMBINO RICHARD J ,  MCGUIRE THOMAS R

公开(公告)号：AU5879573A

公开(公告)日：1975-02-06

申请号：AU5879573

申请日：1973-08-01

Applicant: IBM

Inventor： MCGUIRE THOMAS ROCHE ,  CUOMO JEROME JOHN ,  CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH

IPC: G11C11/14 ,  G11B11/10 ,  G11B11/105 ,  G11B11/11 ,  G11C13/06 ,  G11C19/08 ,  H01F10/00 ,  H01F10/12 ,  H01F10/13 ,  H01F1/04 ,  G11C13/04

公开(公告)号：DE60128953T2

公开(公告)日：2008-02-14

申请号：DE60128953

申请日：2001-11-30

Applicant: IBM

Inventor： CALLEGARI ALESSANDRO C ,  CHAUDHARI PRAVEEN ,  DOANY FUAD E ,  DOYLE JAMES P ,  GALLIGAN EILEEN A ,  HOUGHAM GARETH G ,  GLOWNIA JAMES H ,  LACEY JAMES A ,  LIEN SHUI-CHIH ,  LU MINHAU ,  ROSENBLUTH ALAN E ,  YANG KEI-HSIUNG

IPC: G02F1/1337 ,  B01J19/12 ,  C01B31/02 ,  C23C14/48 ,  C23C14/58

Abstract: A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.

公开(公告)号：DE69030247D1

公开(公告)日：1997-04-24

申请号：DE69030247

申请日：1990-12-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  PATTON GARY LEE ,  SAI-HALASZ GEORGE ANTHONY ,  STORK JOHANNES M CORNELIUS

IPC: H01L29/165 ,  H01L21/331 ,  H01L23/532 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L39/22 ,  H01L39/24

公开(公告)号：DE69030074D1

公开(公告)日：1997-04-10

申请号：DE69030074

申请日：1990-12-13

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  GAMBINO RICHARD JOSEPH ,  KOCH ROGER HILSEN ,  LAIBOWITZ ROBERT BENJAMIN ,  GANIN ETI ,  SAI-HALASZ GEORGE ANTHONY ,  KRUSIN-ELBAUM LIA ,  SUN YUAN-CHEN ,  WORDEMAN MATTHEW ROBERT

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/43 ,  H01L29/49 ,  H01L29/78 ,  H01L39/02 ,  H01L39/22 ,  H01L39/24

公开(公告)号：CA1315015C

公开(公告)日：1993-03-23

申请号：CA582214

申请日：1988-11-03

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER CARL A ,  WOLF HANS P

IPC: H01L39/22 ,  H01L39/14

Abstract: SZ 9-87-012 A Field-Effect Device with a Superconducting Channel. A field-effect structure, formed on a substrate (20) and comprising a channel (21) with source (22) and drain (23) as well as a gate (25) that is separated from the channel by an insulating layer (24). The channel is made of a high-Tc metal-oxide superconductor, e.g., YBaCuO, having a carrier density of about 1021/cm3 and a correlation length of about .2 nm. The channel thickness is in the order of 1 nm, it is single crystalline and oriented such that the superconducting behaviour is strongest in the plane parallel to the substrate. With a signal of a few Volt applied to the gate, the entire channel cross-section is depleted of charge carriers whereby the channel resistance can be switched between "zero" (undepleted, superconducting) and "very high" (depleted).

公开(公告)号：DE3164971D1

公开(公告)日：1984-08-30

申请号：DE3164971

申请日：1981-03-24

Applicant: IBM

Inventor： CHAUDHARI PRAVEEN ,  MUELLER RENE

IPC: H01L31/04 ,  B22D11/00 ,  B22D11/06 ,  H01L21/208 ,  C30B15/00 ,  H01L31/18