公开(公告)号：DE59814220D1

公开(公告)日：2008-05-29

申请号：DE59814220

申请日：1998-01-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  WERNER WOLFGANG ,  HIRLER FRANZ

IPC: H01L29/739 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08 ,  H01L29/10

Abstract: A field effect-controllable semiconductor component, such as a new IGBT using planar technology, includes a shielding zone disposed about a base zone, resulting in elevation of a minority charge carrier density at a cathode side of the IGBT, leading to a reduction of forward voltage. The effect of a drift field produced due to a concentration gradient between the shielding zone and the base zone is that the inner zone no longer acts as a sink for the minority charge carriers. In order to ensure that the breakdown voltage of the IGBT is not reduced by the incorporation of the shielding zone, a non-connected, floating region of high conductivity is disposed in the region of the inner zone. A lower edge of the non-connected, floating region is deeper in the inner zone than a lower edge of the shielding zone. The non-connected, floating region has a conduction type opposite that of the shielding zone and the inner zone.

公开(公告)号：DE102005041322A1

公开(公告)日：2007-03-01

申请号：DE102005041322

申请日：2005-08-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  PFIRSCH FRANK ,  ROPOHL JAN

IPC: H01L29/78 ,  H01L21/336 ,  H01L29/06

Abstract: The trench transistor structure has a field electrode array (13) in trenches (4). The field electrode array has a conductive link to an array (17) of semiconductor zones (18a-18c) in a semiconductor zone (16) adjacent to a drift zone (8) of the transistor field (1). On applying a gate voltage to the transistor structure, the field electrodes (14a-14c) are fixed on a potential from a semiconductor zone through a space charge zone (20a-20c) extending from the semiconductor zone.

公开(公告)号：DE10123818B4

公开(公告)日：2006-09-07

申请号：DE10123818

申请日：2001-05-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L23/62 ,  H01L27/02 ,  H01L27/06 ,  H01L27/12 ,  H01L29/739 ,  H01L29/78

公开(公告)号：DE102004046697A1

公开(公告)日：2006-04-06

申请号：DE102004046697

申请日：2004-09-24

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L29/78 ,  H01L21/331 ,  H01L21/336 ,  H01L29/739

公开(公告)号：DE102004007197A1

公开(公告)日：2005-09-01

申请号：DE102004007197

申请日：2004-02-13

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  HIRLER FRANZ ,  MAUDER ANTON

IPC: H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/78 ,  H01L29/808 ,  H01L29/872

Abstract: A semiconductor component having a drift path ( 2 ) which is formed in a semiconductor body ( 1 ), is composed of a semiconductor material of first conductance type. The drift path ( 2 ) is arranged between at least one first and one second electrode ( 3, 4 ) and has a trench structure in the form of at least one trench ( 18 ). A dielectric material which is referred to as a high-k material and has a relative dielectric constant epsilon r where epsilon r >=20 is arranged in the trench structure such that at least one high-k material region ( 5 ) and one semiconductor material region ( 6 ) of the first conductance type are arranged in the area of the drift path ( 2 ).

公开(公告)号：DE10122362B4

公开(公告)日：2004-12-09

申请号：DE10122362

申请日：2001-05-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  WILLMEROTH ARMIN ,  AUERBACH FRANZ ,  DEBOY GERALD ,  AHLERS DIRK ,  WEBER HANS

IPC: H01L29/06 ,  H01L29/167 ,  H01L29/739 ,  H01L29/78 ,  H01L29/36

公开(公告)号：DE10316530A1

公开(公告)日：2004-11-18

申请号：DE10316530

申请日：2003-04-10

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  SCHAEFFER CARSTEN

IPC: H01L21/331 ,  H01L21/336 ,  H01L29/08 ,  H01L29/10 ,  H01L29/417 ,  H01L29/423 ,  H01L29/739 ,  H01L29/78

Abstract: Production of a semiconductor component comprises preparing a semiconductor body with a dopant of first conductivity and with a trench protruding from a first surface into the semiconductor body, forming a dielectric layer (18) on the walls and base of the trench, depositing conducting material on the first surface and in the trench to form a conducting layer for the gate electrodes (9), applying a first mask (30) partially covering regions of the trench, etching the covered regions of the conducting layer, and implanting doping materials of second conductivity using the first mask and/or gate electrodes as implantation masks. An independent claim is also included for a semiconductor component produced by the above process.

公开(公告)号：DE10337808B3

公开(公告)日：2004-10-21

申请号：DE10337808

申请日：2003-08-14

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L21/265 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78

Abstract: The manufacturing method has an implantation mask (4) with a defined pattern (5) positioned over the surface (6) of a semiconductor substrate with successive implantation of positive and negative doping materials in the substrate using respective doping beams directed through the openings in the mask at different directions to one another. Each of the doping beam directions is at an angle of between 30 and 60 degrees to the normal to the surface of the substrate, with an angle of between 90 and 180 degrees between the doping beam azimuth angles, the obtained implantation regions (7,8) providing buried zones forming the charge compensation structure.

公开(公告)号：DE10246960B4

公开(公告)日：2004-08-19

申请号：DE10246960

申请日：2002-10-09

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK ,  ZUNDEL MARKUS

IPC: H01L27/02 ,  H01L29/423 ,  H01L29/78 ,  H01L27/06

Abstract: An FE power transistor comprises two semiconductor regions (10,12) with MOS channels, source/drain connections, gate control contacts (10',12') and a control connection (16). An overvoltage protection unit (13) between the second gate and drain connects to the second semiconductor region if a gate/drain threshold voltage is exceeded.

公开(公告)号：DE10125268C1

公开(公告)日：2002-08-29

申请号：DE10125268

申请日：2001-05-23

Applicant: INFINEON TECHNOLOGIES AG

Inventor： PFIRSCH FRANK

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78