公开(公告)号：DE102004012819B4

公开(公告)日：2006-02-23

申请号：DE102004012819

申请日：2004-03-16

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L23/482 ,  H01L29/00 ,  H01L29/417 ,  H01L29/43 ,  H01L29/739 ,  H01L29/861

Abstract: The invention relates to a power semiconductor component with increased robustness, in which a contact layer ( 13, 14 ) applied directly to a main surface ( 7, 11 ) of the semiconductor body ( 1 ) is composed of a metal ( 13 ) having a high melting point or of a thin aluminum layer ( 14 ), the layer thickness of which preferably lies between 1 and 5 nm. This contact layer is reinforced with a customary multilayer metallization system ( 15 ). The aluminum layer may, if appropriate, be patterned ( 14' ).

公开(公告)号：DE102004029945A1

公开(公告)日：2006-01-05

申请号：DE102004029945

申请日：2004-06-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L21/225 ,  H01L21/322 ,  H01L21/328 ,  H01L21/331

Abstract: Production of a doped zone in the region of a surface of a semiconductor layer comprises forming an amorphous semiconductor layer in the region of the surface of the semiconductor layer, applying a doping material layer to the amorphous semiconductor layer and heating to not more than 500[deg] C so that doping atoms from the doping material layer penetrate the amorphous semiconductor layer to form the doped zone. Preferred Features: The amorphous semiconductor layer is produced by making amorphous a region of the semiconductor layer close to the surface in the region of the surface.

公开(公告)号：DE10245089B4

公开(公告)日：2005-06-09

申请号：DE10245089

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： TIHANYI JENOE ,  SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  STRACK HELMUT

IPC: H01L21/329 ,  H01L29/08 ,  H01L29/32 ,  H01L29/74 ,  H01L29/861 ,  H01L29/868 ,  H01L21/328 ,  H01L29/739 ,  H01L29/78

公开(公告)号：DE19904103B4

公开(公告)日：2005-04-14

申请号：DE19904103

申请日：1999-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRACK HELMUT ,  TIHANYI JENOE ,  MILLER GERHARD

IPC: H01L29/06 ,  H01L29/739

公开(公告)号：DE10061528C1

公开(公告)日：2002-07-25

申请号：DE10061528

申请日：2000-12-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEBER HANS ,  TIHANYI JENOE ,  STENGL JENS-PEER ,  WILLMEROTH ARMIN ,  AHLERS DIRK ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/417 ,  H01L29/78

公开(公告)号：DE19964214A1

公开(公告)日：2001-04-26

申请号：DE19964214

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L29/06 ,  H01L29/167

Abstract: A compensating component and a method for the production thereof are described. Compensating regions are produced by implanting sulfur or selenium in a p-conductive semiconductor layer or, are provided as p-conductive regions, which are doped with indium, thallium and/or palladium, in a cluster-like manner inside an n-conductive region.

公开(公告)号：DE19942677A1

公开(公告)日：2001-03-22

申请号：DE19942677

申请日：1999-09-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  DEBOY GERALD ,  STRACK HELMUT

IPC: H01L21/265 ,  H01L21/266 ,  H01L21/336 ,  H01L29/06 ,  H01L29/167 ,  H01L29/78

Abstract: Compensating component comprises an n-conducting drift zone (7) provided in a silicon semiconductor body. Areas (8) containing clusters of p-conducting dopant are formed in the drift zone and selected so that the distance between the acceptor level and the valence band edge is larger than the distance between the donator level and the conducting band edge. Independent claims are also included for: (A) the production of a compensating element comprising inserting a p-conducting dopant simultaneously with the n-conducting dopant into the drift zone before depositing an epitaxial layer; and (B) the production of a drift zone of a compensating element.

公开(公告)号：DE102013212787A1

公开(公告)日：2014-01-02

申请号：DE102013212787

申请日：2013-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  KAHLMANN FRANK ,  MAUDER ANTON ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/36 ,  H01L21/22 ,  H01L21/265 ,  H01L21/328 ,  H01L21/336 ,  H01L29/06 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

Abstract: Beschrieben ist ein Halbleiterbauelement mit einem Bauelementgebiet (11), wobei das Bauelementgebiet (11) wenigstens einen Bauelementgebietabschnitt (69–69) aufweist, der Dotierstoffatome eines ersten Dotierungstyps und mit einer ersten Dotierungskonzentration von wenigstens 1E16 cm–3 und Dotierstoffatome eines zweiten Dotierungstyps und mit einer zweiten Dotierungskonzentration von wenigstens 1E16 cm–3 aufweist.

公开(公告)号：DE102004063959B4

公开(公告)日：2010-06-02

申请号：DE102004063959

申请日：2004-06-15

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L21/336 ,  H01L21/28

Abstract: A method for fabricating a buried metallic layer at a predetermined vertical position in a semiconductor body having a first and second side includes a step of applying a metal layer to one of the first and second sides at least in sections. The method also includes establishing a positive temperature gradient in a vertical direction of the semiconductor body proceeding from the one side. The temperature in the region of the one side is higher than the eutectic temperatures of system, so that the metal of the metal layer migrates in the vertical direction into the semiconductor body. The method also includes discontinuing the temperature gradient once the metal reaches the predetermined vertical position in the semiconductor body, in order thereby to obtain the metallic layer at the predetermined position.

公开(公告)号：DE102005039804B4

公开(公告)日：2009-07-09

申请号：DE102005039804

申请日：2005-08-22

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT ,  PFIRSCH FRANK

IPC: H01L29/78 ,  H01L21/335 ,  H01L29/06 ,  H01L29/808 ,  H01L29/861