公开(公告)号：DE10159851B4

公开(公告)日：2006-05-24

申请号：DE10159851

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  SEMIKRON ELEKTRONIK GMBH

Inventor： SILBER DIETER ,  GUTSMANN BERND ,  MOURICK PAUL ,  MILLER GERHARD

IPC: H01L23/48 ,  H01L25/07 ,  H01L23/58 ,  H01L23/66 ,  H02M7/00

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.

公开(公告)号：DE19904103B4

公开(公告)日：2005-04-14

申请号：DE19904103

申请日：1999-02-02

Applicant: INFINEON TECHNOLOGIES AG

Inventor： STRACK HELMUT ,  TIHANYI JENOE ,  MILLER GERHARD

IPC: H01L29/06 ,  H01L29/739

公开(公告)号：DE10245091A1

公开(公告)日：2004-04-08

申请号：DE10245091

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  MILLER GERHARD ,  STENGL JENS-PEER ,  SCHULZE HANS-JOACHIM

IPC: H01L21/263 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861 ,  H01L21/328

Abstract: Production of a semiconductor component structure comprises preparing a semiconductor body (100) having a front side (101) and a rear side (102) and having a base doping, forming a doped trenched semiconductor zone (12) having a higher doping than the base doping in the semiconductor body, and removing the semiconductor body from the rear side up to the trenched semiconductor zone.

公开(公告)号：DE10330571B4

公开(公告)日：2006-08-17

申请号：DE10330571

申请日：2003-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUETHING HOLGER ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM

IPC: H01L29/739 ,  H01L21/331 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861

Abstract: A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

公开(公告)号：DE10245091B4

公开(公告)日：2004-09-16

申请号：DE10245091

申请日：2002-09-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： DEBOY GERALD ,  MILLER GERHARD ,  STENGL JENS-PEER ,  SCHULZE HANS-JOACHIM

IPC: H01L21/263 ,  H01L21/336 ,  H01L29/06 ,  H01L29/78 ,  H01L29/861 ,  H01L21/328

公开(公告)号：DE19950579A1

公开(公告)日：2001-05-03

申请号：DE19950579

申请日：1999-10-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MILLER GERHARD

IPC: H01L29/06 ,  H01L29/739 ,  H01L29/78

Abstract: The compensation MOS element has a semiconductor body (1,2) with a semiconductor region (2) at one surface (4), incorporating opposing conductivity zones (3) extending inwards from the surface, with respective electrodes (8) applied to both surfaces (4,5) of the semiconductor body. A field stop layer (12) with a high doping level lies between the ends of the opposing conductivity zones and the semiconductor substrate (1) with injector zones (11) between the field stop layer and the second surface (5) of the semiconductor body.

公开(公告)号：DE102013211572B4

公开(公告)日：2019-02-14

申请号：DE102013211572

申请日：2013-06-19

Applicant: INFINEON TECHNOLOGIES AG

Inventor： SCHAEFFER CARSTEN ,  KOMARNITSKYY VOLODYMYR ,  MAUDER ANTON ,  MILLER GERHARD ,  PFIRSCH FRANK ,  SCHULZE HANS-JOACHIM ,  SCHULZE HOLGER ,  WERBER DOROTHEA

IPC: H01L29/739 ,  H01L29/06 ,  H01L29/32 ,  H01L29/78 ,  H01L29/861

Abstract: Halbleiterbauelement, das aufweist:ein Zellengebiet (110), das wenigstens eine Bauelementzelle aufweist, wobei die wenigstens eine Bauelementzelle ein erstes Bauelementgebiet (14) eines ersten Leitfähigkeitstyps aufweist;ein Driftgebiet (11) eines zweiten Leitfähigkeittyps, das an das erste Bauelementgebiet (14) der wenigstens einen Bauelementzelle angrenzt;ein dotiertes Gebiet (40) des ersten Leitfähigkeitstyps, das an das Driftgebiet angrenzt und einen pn-Übergang mit dem Driftgebiet (11) bildet; undLadungsträgerlebensdauerverringerungsmittel (41; 42), die dazu ausgebildet sind, eine Ladungsträgerlebensdauer in dem dotierten Gebiet (40) des ersten Leitfähigkeitstyps zu reduzieren,wobei eine Position der Ladungsträgerlebensdauerverringerungsmittel (41; 42) in dem dotierten Gebiet (40; 44) des ersten Leitfähigkeitstyps so gewählt ist, dass ein von dem pn-Übergang ausgehendes Verarmungsgebiet die Ladungsträgerlebensdauerverringerungsmittel (41; 42; 43; 44) nicht erreicht, wenn eine der Spannungsfestigkeit des Halbleiterbauelements entsprechende Spannung an den pn-Übergang angelegt wird.

公开(公告)号：DE102013212787A1

公开(公告)日：2014-01-02

申请号：DE102013212787

申请日：2013-07-01

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HIRLER FRANZ ,  KAHLMANN FRANK ,  MAUDER ANTON ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT

IPC: H01L29/36 ,  H01L21/22 ,  H01L21/265 ,  H01L21/328 ,  H01L21/336 ,  H01L29/06 ,  H01L29/74 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

Abstract: Beschrieben ist ein Halbleiterbauelement mit einem Bauelementgebiet (11), wobei das Bauelementgebiet (11) wenigstens einen Bauelementgebietabschnitt (69–69) aufweist, der Dotierstoffatome eines ersten Dotierungstyps und mit einer ersten Dotierungskonzentration von wenigstens 1E16 cm–3 und Dotierstoffatome eines zweiten Dotierungstyps und mit einer zweiten Dotierungskonzentration von wenigstens 1E16 cm–3 aufweist.

公开(公告)号：DE10330571B8

公开(公告)日：2007-03-08

申请号：DE10330571

申请日：2003-07-07

Applicant: INFINEON TECHNOLOGIES AG

Inventor： MAUDER ANTON ,  RUETHING HOLGER ,  MILLER GERHARD ,  SCHULZE HANS-JOACHIM ,  BAUER JOSEF GEORG ,  FALCK ELMAR

IPC: H01L29/739 ,  H01L21/331 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40 ,  H01L29/417 ,  H01L29/861

Abstract: A vertical power semiconductor component, e.g. a diode or an IGBT, in which there are formed, on the rear side of a substrate, a rear side emitter or a cathode emitter and, over that, a rear side metal layer that at least partly covers the latter, is defined by the fact that, in the edge region of the component, provision is made of injection attenuation means for reducing the charge carrier injection from the rear side emitter or the cathode emitter into said edge section.

公开(公告)号：DE10159851A1

公开(公告)日：2003-06-26

申请号：DE10159851

申请日：2001-12-06

Applicant: INFINEON TECHNOLOGIES AG ,  SEMIKRON ELEKTRONIK GMBH

Inventor： SILBER DIETER ,  GUTSMANN BERND ,  MOURICK PAUL ,  MILLER GERHARD

IPC: H01L23/48 ,  H01L23/66 ,  H01L25/07 ,  H02M7/00 ,  H01L23/58

Abstract: The present invention relates to a circuit assembly with at least two semiconductor components, each having terminals, whereby at least one terminal of the first semiconductor component is connected to a terminal of the other semiconductor component in an electrically conductive manner. The circuit assembly damps high-frequency oscillations that occur during switching operations. An eddy-current damping structure is provided above said assembly at a distance from the semiconductor components or said semiconductor components are directly connected to each other by means of a high-resistance wire connection in addition to the existent electroconductive connection.