公开(公告)号：DE19963500A1

公开(公告)日：2001-07-26

申请号：DE19963500

申请日：1999-12-28

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  AHLSTEDT MATTIAS

IPC: H01L21/316 ,  H01L21/02 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8242 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/108 ,  H01L21/321 ,  C23C16/40

Abstract: The damage to edge sections which occurs during the patterning of a metal-oxide-containing layer can be compensated by the deposition of an annealing layer and a subsequent heat treatment step through which a material flow takes place from the annealing layer into the damaged edge sections. The metal-oxide-containing layer can form the dielectric of a storage capacitor of a DRAM memory cell.

公开(公告)号：DE19945140A1

公开(公告)日：2001-04-12

申请号：DE19945140

申请日：1999-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  VEITH SEBASTIAN ,  HASLER BARBARA

IPC: G03F7/40 ,  H01L21/033 ,  H01L21/308 ,  B32B15/08 ,  H01L21/312

Abstract: The invention relates to a method for producing a mask layer having openings with reduced widths. An organic resist layer (3) is produced over the semiconductor substrate and is lithographically structured, whereby a resist opening (4) is produced in the resist layer (3). A polymer film (5) is deposited on the structured resist layer (3). Said film covers the side walls and the bottom (6) of the resist opening (4). The polymer film (5) is removed from the bottom (6) of the resist opening (4) by means of anisotropic etching.

公开(公告)号：DE19935131A1

公开(公告)日：2001-02-08

申请号：DE19935131

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERGMANN RENATE ,  DEHM CHRISTINE ,  HASLER BARBARA ,  SCHELER ULRICH ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/8239 ,  H01L27/08

Abstract: The invention relates to a method for removing redepositions on a wafer and to a wafer which is devoid of redepositions. The removal of the redepositions on the wafer occurs after a protective layer is arranged on the top electrode and the boundary surfaces of the electrodes with a dielectric, whereby said areas are not damaged by wet chemical agents enabling the redepositions to be exclusively and efficiently removed.

公开(公告)号：DE19945140B4

公开(公告)日：2006-02-02

申请号：DE19945140

申请日：1999-09-21

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER ,  VEITH SEBASTIAN ,  HASLER BARBARA

IPC: B32B15/08 ,  G03F7/40 ,  H01L21/033 ,  H01L21/308 ,  H01L21/312

公开(公告)号：DE19935131B4

公开(公告)日：2006-01-26

申请号：DE19935131

申请日：1999-07-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： BERGMANN RENATE ,  DEHM CHRISTINE ,  HASLER BARBARA ,  SCHELER ULRICH ,  SCHINDLER GUENTHER ,  WEINRICH VOLKER ,  HARTNER WALTER

IPC: H01L21/02 ,  H01L21/302 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/8239 ,  H01L27/08

公开(公告)号：DE10120516B4

公开(公告)日：2004-09-16

申请号：DE10120516

申请日：2001-04-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

公开(公告)号：DE10027932C2

公开(公告)日：2003-10-02

申请号：DE10027932

申请日：2000-05-31

Applicant: INFINEON TECHNOLOGIES AG

Inventor： ENGELHARDT MANFRED ,  WEINRICH VOLKER

IPC: H01L21/033 ,  H01L21/311 ,  H01L21/768 ,  H01L21/283

Abstract: A method for etching an insulating layer of an electronic or microelectronic component uses a catalyst that is present during the etching. The method is in particular used for etching oxides. The catalyst may be added in a gaseous form and/or as an intermediate layer in the component. A component having structures etched in a dielectric material, in which traces of an etching catalyst are detectable in and/or around a contact hole and/or the structures is also provided.

公开(公告)号：DE10120516A1

公开(公告)日：2002-10-31

申请号：DE10120516

申请日：2001-04-26

Applicant: INFINEON TECHNOLOGIES AG

Inventor： WEINRICH VOLKER

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8242 ,  H01L27/108

公开(公告)号：DE10057444A1

公开(公告)日：2002-05-29

申请号：DE10057444

申请日：2000-11-20

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HARTNER WALTER ,  WEINRICH VOLKER ,  KROENKE MATTHIAS

IPC: H01L21/02 ,  H01L21/768 ,  H01L21/8239

Abstract: Production of a capacitor arrangement comprises filling exposed intermediate regions (24) of the surface (21) of the substrate (20) with an electrically insulating intermediate layer (30) up to the level of an upper layer (18) of a capacitor device (10). Preferred Features: A contact layer (50) is applied and/or structured on the intermediate layer to provide an electrical contact with the upper layer of the capacitor device.

公开(公告)号：DE10039411A1

公开(公告)日：2002-02-28

申请号：DE10039411

申请日：2000-08-11

Applicant: INFINEON TECHNOLOGIES AG

Inventor： HINTERMAIER FRANK ,  WEINRICH VOLKER ,  HARTNER WALTER ,  SCHINDLER GUENTHER ,  ENGELHARDT MANFRED

IPC: H01L21/02 ,  H01L21/311

Abstract: The invention relates to methods for structuring ferroelectric layers on semiconductor substrates. The inventive methods retain or regenerate the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components.