公开(公告)号：EP2969913A1

公开(公告)日：2016-01-20

申请号：EP14710849.2

申请日：2014-03-12

Applicant: Robert Bosch GmbH

Inventor： HEUCK, Friedjof ,  SCHELLING, Christoph

IPC: B81C1/00

CPC classification number: B81C1/00619 ,  B81C1/00412 ,  B81C2201/0177 ,  B81C2201/0188

Abstract: The invention relates to a method for producing a micromechanical component and to a corresponding micromechanical component. The production method comprises the following steps: providing a substrate (1) with a monocrystalline starting layer (1c) which is exposed in structured regions (3a-3e), said structured regions (3a-3e) having an upper face (O) and lateral flanks (F), wherein a catalyst layer (2), which is suitable for promoting a silicon epitaxial growth of the exposed upper face (O) of the structured monocrystalline starting layer (1c), is provided on the upper face (O), and no catalyst layers (2) are provided on the flanks (F); and carrying out a selective epitaxial growth process on the upper face (O) of the monocrystalline starting layer (1c) using the catalyst layer (2) in a reactive gas atmosphere in order to form a micromechanical functional layer (3').

公开(公告)号：EP3064471A4

公开(公告)日：2017-06-21

申请号：EP13896608

申请日：2013-11-19

Applicant: INDUSTRY-UNIV COOP FOUND SOGANG UNIV

Inventor： LEE JUNG CHUL ,  LEE IL

IPC: B81C1/00 ,  B81C99/00 ,  G01N33/00

CPC classification number: B81C1/0015 ,  B29C35/0805 ,  B29C64/135 ,  B29C2035/0827 ,  B29K2071/02 ,  B29K2105/0061 ,  B29K2995/0027 ,  B29L2031/756 ,  B33Y10/00 ,  B33Y30/00 ,  B33Y80/00 ,  B81B3/0021 ,  B81B2201/12 ,  B81B2203/0118 ,  B81C99/0025 ,  B81C2201/0188 ,  B81C2201/034 ,  B81C2203/038 ,  G01D11/30 ,  G01Q70/14 ,  G01Q70/16

公开(公告)号：EP3174689A1

公开(公告)日：2017-06-07

申请号：EP15745164.2

申请日：2015-07-14

Applicant: Fraunhofer-ges. zur Förderung der Angewandten Forschung E.V.

Inventor： SCHIEBEL, Felix ,  EBERL, Christoph ,  BERWIND, Matthew ,  GUMBSCH, Peter

IPC: B29C67/00 ,  B81C99/00

CPC classification number: B81C1/00373 ,  B29C64/135 ,  B33Y10/00 ,  B33Y80/00 ,  B81B7/0074 ,  B81B2201/038 ,  B81B2201/047 ,  B81B2203/0315 ,  B81B2203/0392 ,  B81C3/001 ,  B81C99/0095 ,  B81C2201/0188 ,  B81C2203/038

Abstract: The invention relates to a method for producing micromechanical components (1), wherein a liquid starting material (2) which can be cured by means of irradiation is applied onto a substrate, and a partial volume (21) of the starting material is cured by means of a local irradiation process using a first radiation source in order to produce at least one three-dimensional structure. The three-dimensional structure delimits at least one closed cavity (10), in which at least one part of the liquid starting material (2) is enclosed. The invention further relates to a micromechanical component that contains a liquid starting material (2), which is partly cured by means of irradiation, and at least one cavity (10), in which the liquid starting material (2) is enclosed.

Abstract translation: 本发明涉及一种用于制造微机械部件（1）的方法，其中通过照射可以固化的液体原料（2）被施加到基板上，并且部分体积（21）的原材料通过 为了产生至少一个三维结构，使用第一辐射源的局部照射过程的装置。 三维结构限定了至少一个封闭空腔（10），其中封闭了液体原料（2）的至少一部分。 本发明还涉及一种微机械部件，该微机械部件含有通过照射而部分固化的液体原料（2）和至少一个封闭液体原料（2）的空腔（10）。

公开(公告)号：EP2556015A1

公开(公告)日：2013-02-13

申请号：EP11766241.1

申请日：2011-04-05

Applicant: Niklaus, Frank ,  Fischer, Andreas

Inventor： Niklaus, Frank ,  Fischer, Andreas

IPC: B81C99/00 ,  B82Y10/00 ,  B82Y20/00 ,  G01Q90/00 ,  H01L21/20 ,  H01L21/265

CPC classification number: B81C1/00373 ,  B33Y10/00 ,  B33Y70/00 ,  B81C2201/0143 ,  B81C2201/0188 ,  B82Y20/00

Abstract: The invention relates to a method of making a three-dimensional structure in semiconductor material. A substrate (20) is provided having at least a surface comprising semiconductor material. Selected areas of the surface of the substrate are to a focused ion beam whereby the ions are implanted in the semiconductor material in said selected areas. Several layers of a material selected from the group consisting of mono-crystalline, poly-crystalline or amorphous semiconductor material, are deposited on the substrate surface and between depositions focused ion beam is used to expose the surface so as to define a three-dimensional structure. Material not part of the final structure (30) defined by the focused ion beam is etched away so as to provide a three-dimensional structure on said substrate (20).

公开(公告)号：EP2645409A4

公开(公告)日：2016-01-06

申请号：EP11843493

申请日：2011-11-18

Applicant: TANAKA PRECIOUS METAL IND

Inventor： OGASHIWA TOSHINORI ,  KURITA MASAAKI ,  NISHIMORI TAKASHI ,  KANEHIRA YUKIO

IPC: H01L21/60

CPC classification number: H01L21/4885 ,  B22F7/08 ,  B23K1/0016 ,  B23K35/0244 ,  B23K35/3006 ,  B23K35/3013 ,  B23K35/322 ,  B23K2201/40 ,  B81C1/00095 ,  B81C1/00373 ,  B81C2201/0188 ,  B81C2201/0194 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/94 ,  H01L2224/03003 ,  H01L2224/031 ,  H01L2224/0312 ,  H01L2224/03334 ,  H01L2224/0401 ,  H01L2224/0508 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/0567 ,  H01L2224/05671 ,  H01L2224/05673 ,  H01L2224/05676 ,  H01L2224/05678 ,  H01L2224/05681 ,  H01L2224/05684 ,  H01L2224/11003 ,  H01L2224/111 ,  H01L2224/1112 ,  H01L2224/11334 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13166 ,  H01L2224/13169 ,  H01L2224/1317 ,  H01L2224/13171 ,  H01L2224/13173 ,  H01L2224/13176 ,  H01L2224/13178 ,  H01L2224/13181 ,  H01L2224/13184 ,  H01L2224/94 ,  H01L2924/01006 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01044 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/1461 ,  H01L2924/15788 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/11

Abstract: The present invention provides a transfer substrate for transferring a metal wiring material to a transfer-receiving object, the transfer substrate comprising a substrate, at least one metal wiring material formed on the substrate and an underlying metal film formed between the substrate and the metal wiring material, wherein the metal wiring material is a molded article prepared by sintering, e.g., gold powder having a purity of 99.9% by weight or more and an average particle size of 0.01 µm to 1.0 µm and the underlying metal film is composed of a metal such as gold or an alloy. The transfer substrate is capable of transferring a metal wiring material to the transfer-receiving object even at a temperature for heating the transfer-receiving object of 80 to 300°C.

公开(公告)号：EP2586596A4

公开(公告)日：2015-01-21

申请号：EP11797981

申请日：2011-06-07

Applicant: JAPAN SCIENCE & TECH AGENCY

Inventor： IKUTA KOJI ,  IKEUCHI MASASHI

IPC: B29C67/00 ,  A61M37/00 ,  B81C1/00

CPC classification number: B29C67/0081 ,  A61M2037/0023 ,  A61M2037/0053 ,  B29C64/135 ,  B29L2031/7544 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/055 ,  B81C1/00373 ,  B81C2201/0188 ,  Y10T428/2933 ,  Y10T428/31678

公开(公告)号：EP2753573A2

公开(公告)日：2014-07-16

申请号：EP12770305.6

申请日：2012-08-27

Applicant: Qualcomm Mems Technologies, Inc.

Inventor： STEPHANOU, Philip Jason ,  LONDERGAN, Ana Rangelova ,  GOUSEV, Evgeni Petrovich ,  SHENOY, Ravindra Vaman

IPC: B81C1/00 ,  C25D5/10 ,  C25D5/18 ,  C23C28/02

CPC classification number: B81C1/0038 ,  B81B2203/0392 ,  B81C2201/0107 ,  B81C2201/0188 ,  B81C2201/038 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D7/00 ,  Y10T428/12493 ,  Y10T428/24612

Abstract: This disclosure provides implementations of high surface area stacked layered metallic structures, devices, apparatus, systems, and related methods. A plurality of stacked layers on a substrate may be manufactured from a plating bath including a first metal and a second metal. A modulated plating current can deposit alternate first metal layers and alloy layers, the alloy layers including the first metal and the second metal. Gaps between the alloy layers can be formed by selectively etching some portions of the first metal layers to define a stacked layered structure. Stacked layered structures may be useful in applications to form capacitors, inductors, catalytic reactors, heat transfer tubes, non-linear springs, filters, batteries, and heavy metal purifiers.

公开(公告)号：EP2586596A1

公开(公告)日：2013-05-01

申请号：EP11797981.5

申请日：2011-06-07

Applicant: Japan Science and Technology Agency

Inventor： IKUTA Koji ,  IKEUCHI Masashi

IPC: B29C67/00

CPC classification number: B29C67/0081 ,  A61M2037/0023 ,  A61M2037/0053 ,  B29C64/135 ,  B29L2031/7544 ,  B33Y10/00 ,  B33Y70/00 ,  B81B2201/055 ,  B81C1/00373 ,  B81C2201/0188 ,  Y10T428/2933 ,  Y10T428/31678

Abstract: Disclosed is a method for producing a three-dimensional polymer-metal complex microstructure including forming a polymer structure by stereolithography using a photocurable resin having a reactive group X and dipping it in a liquid of a metal-containing nanoparticle having a reactive group X' which is bound to the reactive group X, thereby forming a metal-containing layer on the polymer structure through binding the reactive group X and the reactive group X'.
According to this method, it is possible to produce a polymer-metal complex structure having a steric structure and to produce a three-dimensional polymer-metal complex microstructure which does not denature biomolecules in a metal complexation process.

公开(公告)号：KR1020160079028A

公开(公告)日：2016-07-05

申请号：KR1020167013973

申请日：2014-11-25

Applicant: 레이티언 캄파니

Inventor： 구치,로랜드 ,  코시안,토마스알란 ,  디에프,부우 ,  케네디,아담,엠. ,  블랙,스테판,에이치.

IPC: H01L31/0216 ,  H01L31/18 ,  H01L31/0232 ,  H01L31/0236 ,  H01L31/0203 ,  B81C1/00

CPC classification number: H01L31/18 ,  B81C1/00373 ,  B81C2201/0188 ,  H01L31/02327 ,  H01L31/02167 ,  H01L31/0203 ,  H01L31/02366

Abstract: 복수의캐비티들을갖는기판의표면의선택된부분들상에물질의코팅을형성하기위한방법은, 상부에이형제를갖는구조를제공하는단계; 상기웨이퍼의상부표면상에배치되는상기이형제를포함하고및 상기이형제가없는상기캐비티들의저부들을갖는중간구조를형성하기위하여, 상기캐비티들의저부들을상기이형제로부터이격되게남게하면서상기이형제의일부들을상기웨이퍼의상부표면으로전송하도록상기웨이퍼의상부표면을상기이형제와접촉시키는단계; 상기이형제및 상기캐비티들의저부들모두상에상기물질을블랭킷코트하도록상기중간구조를상기물질에노출시키는단계; 및상기코팅물질을상기캐비티들의저부들상에남기면서상기코팅물질과함께상기이형제를선택적으로제거하는단계를포함한다.

公开(公告)号：JP2017009609A

公开(公告)日：2017-01-12

申请号：JP2016122395

申请日：2016-06-21

Applicant: ニヴァロックス−ファー ソシエテ アノニム

Inventor： アレクス・ガンデルマン ,  アンドレ・パン

IPC: B81C1/00 ,  G04B13/02 ,  G04B19/06 ,  G04B37/22 ,  G04B15/14

CPC classification number: B81C1/00619 ,  B81C1/00103 ,  G04D99/00 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C2201/0112 ,  B81C2201/0132 ,  B81C2201/0138 ,  B81C2201/014 ,  B81C2201/0188 ,  B81C2201/0198

Abstract: 【課題】材料のウェハを微小機械加工することによって形成される構成部品の摩擦を改善できる、新たなタイプの微小機械構成部品および新たなタイプの制作方法を提案する。 【解決手段】本発明は、少なくとも1つの削減された接触表面を有する、シリコン系構成部品に関し、上記接触表面は、垂直な側壁の「Bosch」エッチングによる、少なくとも1つの傾斜した側壁のエッチングステップによって形成され、特にシリコン系ウェハの微小機械加工によって形成された構成部品の摩擦を改善する。 【選択図】図11

Abstract translation: 材料的晶片可以提高通过微机械加工形成的摩擦部件，提出了一种微机械的部件和新类型的新类型的制造方法。 本发明具有至少一个减小的接触表面涉及基于硅的部件，所述接触面，由“博世”通过蚀刻至少一个倾斜的侧壁的步骤刻蚀垂直侧壁 它被形成，特别是通过改善微机械加工的硅晶片形成的摩擦部件。 .The 11