公开(公告)号：WO2013157474A1

公开(公告)日：2013-10-24

申请号：PCT/JP2013/060914

申请日：2013-04-11

Applicant: 株式会社日立ハイテクノロジーズ

Inventor： 大南　祐介 ,  河西　晋佐 ,  大瀧　智久 ,  安島　雅彦 ,  伊東　祐博

IPC: H01J37/18 ,  H01J37/09 ,  H01J37/16

CPC classification number: H01J37/261 ,  H01J37/09 ,  H01J37/10 ,  H01J37/147 ,  H01J37/16 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/0245 ,  H01J2237/043 ,  H01J2237/063 ,  H01J2237/10 ,  H01J2237/162 ,  H01J2237/164 ,  H01J2237/2003 ,  H01J2237/2448 ,  H01J2237/2602 ,  H01J2237/2605

Abstract: 荷電粒子線装置（１）は、荷電粒子光学鏡筒（１０）と荷電粒子光学鏡筒（１０）を搭載する支持筐体（２０）と支持筐体（２０）の内部に挿入される内挿筐体（３０）を備え、第一アパーチャ部材（１５）が対物レンズの磁場の中心近傍に配設され、第二アパーチャ部材（３１）が内挿筐体（３０）の上面に設けられた開口部を外側から塞ぐように配設される。そして、一次荷電粒子線（１２）が第二アパーチャ部材（３１）の下面側に配置された試料（６０）に照射されたとき、放出される二次荷電粒子を検出器（１６）により検出する。

Abstract translation: 带电粒子束装置（1）包括带电粒子光学透镜管（10），安装带电粒子光学透镜管（10）的支撑壳体（20）和插入的内插入壳体（30） 在支撑壳体（20）内。 第一孔径构件（15）设置在物镜中心附近，并且第二孔径构件（31）设置成从外侧与设置在内插入壳体的上表面上的孔部分 身体（30）。 然后，当将初级带电粒子束（12）照射在位于第二孔径构件（31）的下表面侧的样品（60）上时，通过检测器（16）检测辐射的二次带电粒子， 。

公开(公告)号：WO99007009A1

公开(公告)日：1999-02-11

申请号：PCT/EP1998/004390

申请日：1998-07-15

IPC: H01J37/30 ,  H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/30488 ,  H01J2237/30494 ,  H01J2237/31769

Abstract: A method of writing a pattern on the surface of a substrate (13), for example a circuit on a resist-coated wafer, by an electron beam comprises the steps of exposing the substrate surface to an electron beam (12) which is controlled to progressively describe the pattern by stepped movement of a focused spot of the beam over the surface. The exposure of the surface to the beam is varied by selectably modulating the beam, such as through deflection by deflecting plates (17) to and from a blanking element (16), in the periods between successive movement steps so as to reduce the electron dose in predetermined positions of the beam spot on the surface.

Abstract translation: 通过电子束在基板（13）表面上形成图案的方法，例如在抗蚀剂涂覆晶片上的电路的方法包括以下步骤：将基板表面暴露于电子束（12），该电子束被控制为 逐渐地通过在该表面上的束的聚焦点的阶梯式运动来描述图案。 通过可选择地调节光束，例如通过在连续的移动步骤之间的时间段内通过偏转板（17）到消隐元件（16）和从消隐元件（16）偏转来改变表面到光束的曝光，以便减少电子剂量 在表面上的束斑的预定位置。

公开(公告)号：WO1986004183A1

公开(公告)日：1986-07-17

申请号：PCT/US1985002304

申请日：1985-11-25

Applicant: HUGHES AIRCRAFT COMPANY

Inventor： HUGHES AIRCRAFT COMPANY ,  KNAUER, Wolfgang

IPC: H01J37/30

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3007 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/31776

Abstract: Charged particle source (14) delivers beam (20) which is collimated onto first aperture plate having first aperture (28). The beam passing therethrough is deflected by deflection plates (32, 34, 38 and 40) with respect to second aperture (46) in second aperture plate (44). The image (50) of the second aperture (46) is focused on the target plane (16) and the virtual image of the footprint (58) of the deflected beam is focused on the target plane (16). When these images overlap, a shaped beam (56) passes through. Scanning of the beam across the target plane by deflection plates (52 and 54) permits exposure of sharp-edged features (62) by positioning the image (60a) inside the margin (64) and then scanning the image (50b) thereacross to expose the sharp edge and thereupon picking up the image (60) so that they both scan across the feature to be exposed.

公开(公告)号：EP2927748A3

公开(公告)日：2015-12-30

申请号：EP15175372.0

申请日：2015-07-06

Applicant: IMS Nanofabrication AG

Inventor： Platzgummer, Elmar

IPC: G03F7/20 ,  H01J37/317 ,  H01J37/302

CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern (160) is provided as a graphical representation suitable for the reference tool, such as a raster graphics (161), on the image area on the target. A convolution kernel (162) is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

公开(公告)号：EP2645402A2

公开(公告)日：2013-10-02

申请号：EP13161508.0

申请日：2013-03-28

Applicant: FEI Company

Inventor： Miller, Tom ,  Kellogg, Sean ,  Zbranek, Jiri

IPC: H01J37/304

CPC classification number: H01J37/08 ,  H01J37/045 ,  H01J37/243 ,  H01J37/302 ,  H01J2237/043 ,  H01J2237/0805 ,  H01J2237/0817 ,  H01J2237/30472 ,  H01J2237/31749

Abstract: An improved method and apparatus for shutting down and restoring an ion beam in an ion beam system. Preferred embodiments provide a system for improved power control of a focused ion beam source, which utilizes an automatic detection of when a charged particle beam system is idle (the beam itself is not in use) and then automatically reducing the beam current to a degree where little or no ion milling occurs at any aperture plane in the ion column. Preferred embodiments include a controller operable to modify voltage to an extractor electrode and/or to reduce voltage to a source electrode when idle state of an ion source of the charged particle beam system is detected.

Abstract translation: 一种用于在离子束系统中关闭和还原离子束的改进的方法和装置。 优选的实施例提供了一种用于改进聚焦离子束源的功率控制的系统，该系统利用对带电粒子束系统何时空闲（束本身不使用）的自动检测，然后自动将束电流减小至 在离子柱中的任何孔径平面处都发生很少或没有离子研磨。 优选的实施例包括可操作以在检测到带电粒子束系统的离子源的空闲状态时将电压修改为提取器电极和/或降低对源电极的电压的控制器。

公开(公告)号：EP2575159A1

公开(公告)日：2013-04-03

申请号：EP11007980.3

申请日：2011-09-30

Applicant: Carl Zeiss NTS GmbH

Inventor： Biberger, Josef ,  Pulwey, Ralph ,  Wieczorek, Volker

IPC: H01J37/28 ,  H01J37/04 ,  H01J37/147 ,  H01J37/26

CPC classification number: H01J37/265 ,  H01J37/045 ,  H01J37/1472 ,  H01J37/1474 ,  H01J37/28 ,  H01J2237/043 ,  H01J2237/063 ,  H01J2237/15 ,  H01J2237/2487 ,  H01J2237/2602

Abstract: A method of operating a particle beam system comprises determining a deflection amount and a deflection time of a beam deflection module connected to a data network; determining an un-blank time of a beam blanking module connected to the data network; determining a blank time of the beam blanking module connected to the data network; generating a data structure comprising plural data records, wherein each data record includes a command representing an instruction for at least one of the modules, and a command time representing a time at which the instruction is to be sent to the data network; sorting the records of the data structure by command time; generating a set of digital commands based on the data structure; and sending the digital commands of the set to the network in an order corresponding to an order of the sorted records.

Abstract translation: 操作粒子束系统的方法包括确定连接到数据网络的光束偏转模块的偏转量和偏转时间; 确定连接到数据网络的波束消隐模块的非空白时间; 确定连接到数据网络的波束消隐模块的空白时间; 生成包括多个数据记录的数据结构，其中每个数据记录包括表示至少一个所述模块的指令的命令以及表示所述指令要发送到所述数据网络的时间的命令时间; 通过命令时间对数据结构的记录进行排序; 基于数据结构生成一组数字命令; 并且以与排序记录的顺序相对应的顺序将集合的数字命令发送到网络。

公开(公告)号：EP1000437A1

公开(公告)日：2000-05-17

申请号：EP98940229.2

申请日：1998-07-15

Applicant: Leica Lithography Systems Ltd.

Inventor： KING, David Martin Platton ,  HUGHES, Barrie James

IPC: H01J37/317

CPC classification number: B82Y10/00 ,  B82Y40/00 ,  H01J37/3174 ,  H01J2237/043 ,  H01J2237/30488 ,  H01J2237/30494 ,  H01J2237/31769

Abstract: A method of writing a pattern on the surface of a substrate (13), for example a circuit on a resist-coated wafer, by an electron beam comprises the steps of exposing the substrate surface to an electron beam (12) which is controlled to progressively describe the pattern by stepped movement of a focused spot of the beam over the surface. The exposure of the surface to the beam is varied by selectably modulating the beam, such as through deflection by deflecting plates (17) to and from a blanking element (16), in the periods between successive movement steps so as to reduce the electron dose in predetermined positions of the beam spot on the surface.

公开(公告)号：EP0811999A2

公开(公告)日：1997-12-10

申请号：EP97108821.6

申请日：1997-06-02

Applicant: HITACHI, LTD.

Inventor： Todokoro, Hideo ,  Yamada, Osamu

IPC: H01J37/26 ,  G02B21/00

CPC classification number: H01J37/28 ,  G02B21/002 ,  H01J2237/043 ,  H01J2237/22

Abstract: A scanned image to be observed or to be recorded is formed by a plurality of two-dimensional scanning times (N times), an irradiating charged particle beam or a light beam is blanked in a two-dimensional scanning unit, and the averaged irradiation intensity is adjusted by thinning a plurality (

Abstract translation: 通过多次二维扫描时间（N次）形成要观察或将被记录的扫描图像，在二维扫描单元中对照射的带电粒子束或光束进行消隐，并且平均照射强度 通过稀释N次扫描中的多个（

公开(公告)号：WO2017187548A1

公开(公告)日：2017-11-02

申请号：PCT/JP2016/063177

申请日：2016-04-27

Applicant: 株式会社日立ハイテクノロジーズ

Inventor： 津野　夏規 ,  鈴木　直正 ,  沖田　篤士 ,  福田　宗行

IPC: H01J37/28 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/225 ,  H01J37/265 ,  H01J2237/004 ,  H01J2237/043 ,  H01J2237/2809

Abstract: 低ダメージで試料の表面および内部の観察・評価が可能な荷電粒子線装置を提供するために，荷電粒子線源（１０２）と，試料（２１０）を載置する試料台（１０９）と，荷電粒子線（１００）をパルス化し，０ｋＶを超え５ｋＶ以下の範囲内の加速電圧で試料に照射する荷電粒子線光学系と，試料の測定対象を選択するスプリット距離選択部（１２５）と，荷電粒子線（１００）の試料（２１０）上での１回のライン走査中のスプリット距離Ｌを設定するスプリット距離設定部（１２４）と，を備える荷電粒子線装置とする。

Abstract translation: 为了提供在

表面和能够与低损伤的样品，将所述带电粒子束源（102），样品的观察和评价带电粒子射线装置的内部（210） 样品台（109），脉冲选择来选择测定对象样品带电粒子束（100），用于在小于5kV的范围内的加速电压照射标本的带电粒子束光学系统超过0千伏，分割距离 （100）的试样（210）的一行扫描期间设定分割距离L的分割距离设定部（125）和分割距离设定部（124） 。

公开(公告)号：WO2013167391A2

公开(公告)日：2013-11-14

申请号：PCT/EP2013/058652

申请日：2013-04-25

Applicant: ARCAM AB

Inventor： SVENSSON, Mattias ,  LJUNGBLAD, Ulric

IPC: H01J37/077

CPC classification number: H01J29/52 ,  B29C64/153 ,  B33Y10/00 ,  B33Y30/00 ,  H01J37/077 ,  H01J37/305 ,  H01J37/3178 ,  H01J2237/043 ,  H01J2237/3128 ,  H01J2237/31732

Abstract: Various embodiments of the present invention relate to a plasma electron source apparatus. The apparatus comprises a cathode discharge chamber in which a plasma is generated, an exit hole provided in said cathode discharge chamber from which electrons from the plasma are extracted by an accelerating field provided between said cathode discharge chamber and an anode, at least one plasma confinement device, and a switching mechanism for switching the at least one plasma confinement device between a first value allowing for electron extraction from the plasma and a second value prohibiting electron extraction from the plasma. Associated methods are also provided.

Abstract translation: 本发明的各种实施方式涉及等离子体电子源装置。 该装置包括：阴极放电室，其中产生等离子体，设置在所述阴极放电室中的出射孔，来自等离子体的电子由所述阴极放电室和阳极之间的加速场提取，至少一个等离子体限制 装置和切换机构，用于在允许从等离子体提取电子的第一值和禁止从等离子体中提取电子的第二值之间切换至少一个等离子体约束装置。 还提供了相关的方法。