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公开(公告)号：KR101029984B1
公开(公告)日：2011-04-20
申请号：KR1020080113406
申请日：2008-11-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/67742 , H01L21/67005 , H01L21/67196
Abstract: (과제) 반송 아암(arm) 표면의 이물질을 제거하는 수단을 갖는 기판 처리 장치로서, 장치 구성을 간소화함과 함께 이물질 제거에 의해 장치의 스루풋(throughput)이 저하되지 않는 기판 처리 장치를 제공한다.
(해결 수단) 기판 처리 장치(11)는, 반도체 웨이퍼(W)에 처리를 행하는 적어도 1개의 처리실(21)과, 처리실(21)에 인접하는 반송실(14)과, 반송실(14)의 내부를 감압하는 진공 펌프(16)와, 반송실(14) 및 처리실(21)의 사이에서 반도체 웨이퍼(W)를 반송하는 반송 장치(15)와, 반송 장치(15)에 부착한 이물질을 반송실(14) 내에서 제거하는 이물질 제거 수단을 구비한다.
이물질 제거, 반송 장치, 기판 처리Abstract translation: 本发明提供一种基板处理装置，其具有用于去除输送臂表面上的异物的装置，其简化了装置的结构并且不会通过去除异物来降低装置的生产量。
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公开(公告)号：KR101004365B1
公开(公告)日：2010-12-28
申请号：KR1020080115648
申请日：2008-11-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/205 , H01L21/683 , H01L21/677
CPC classification number: H01L21/68735 , C23C16/4404 , H01L21/67748
Abstract: (과제) 반송 아암의 상면(上面)에 대한 코팅재의 전사를 방지할 수 있는 플라즈마 처리 시스템을 제공한다.
(해결 수단) 처리 용기(30) 내에 공급된 처리 가스를 플라즈마화시킴으로써, 처리 용기(30) 내에 있어서 기판(W)을 처리하는 플라즈마 처리 장치(5)와, 플라즈마 처리 장치(5)의 처리 용기(30) 내에 대하여 기판(W)을 반입, 반출시키는 반송 아암(11)을 구비한 처리 시스템(1)으로서, 처리 용기(30) 내에는, 기판(W)을 상면에 올려놓는 재치대(31)가 형성되고, 재치대(31)의 상면에는, 반송 아암(11)에 의한 기판(W)의 지지 위치에 대응하는 개소에, 오목부(33)가 형성되어 있다. 반송 아암(11)에 의한 기판(W)의 지지 위치에 대응하는 개소에 있어서는, 재치대(31)의 상면으로부터 기판(W)의 이면(裏面)에 대하여 코팅재가 전사되는 일이 없다. 이 때문에, 반송 아암(11)의 상면에도 코팅재가 전사되지 않게 된다.
플라즈마, 반송 아암, 재치대, 전사-
43.发明公开
公开(公告)号：KR1020100126513A
公开(公告)日：2010-12-01
申请号：KR1020107023086
申请日：2009-05-11
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/316 , H01L21/76
CPC classification number: H01L21/76224 , C23C16/402 , C23C16/511 , H01L21/02164 , H01L21/02274 , H01L21/28273 , H01L21/31612
Abstract: 실리콘 화합물 가스, 산화 가스, 및 희가스가 플라즈마 처리 장치(1)의 챔버(2) 내로 공급된다. 마이크로파가 챔버(2) 내로 공급되고, 마이크로파에 의해 발생된 플라즈마를 이용하여 피처리체 기판 상에 실리콘 산화막이 형성된다. 희가스의 분압비는 실리콘 화합물 가스, 산화 가스, 및 희가스의 전체 가스압의 10% 이상이며, 실리콘 화합물 가스와 산화 가스의 유효 흐름비(산화 가스/실리콘 화합물 가스)는 3 이상 11 이하이다.
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公开(公告)号：KR1020100003353A
公开(公告)日：2010-01-08
申请号：KR1020097023404
申请日：2008-03-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/768 , H01L21/28
CPC classification number: H01L21/31144 , C23C16/26 , H01L21/02074 , H01L21/0212 , H01L21/02274 , H01L21/02304 , H01L21/3127 , H01L21/76808 , H01L21/76883 , Y10S438/951
Abstract: A method for fabricating a semiconductor device includes the steps of (a) forming a plasma of a gas having carbon and fluorine, and forming an internal insulation film provided with a fluorine-doped carbon film formed on a substrate using the plasma; (b) forming a metal film on the internal insulation film; (c) etching the metal film according to a pattern to form a hard mask; (d) forming a concave part in the fluorine-doped carbon film by etching the fluorine-doped carbon film using the hard mask; (e) forming a film formation of a wiring material on the substrate for filling the concave part with the wiring material; (f) removing an excess part of the wiring material and the hard mask on the fluorine-doped carbon film for exposing a surface of the fluorine-doped carbon film; and (g) removing an oxide formed on the surface of the fluorine-doped film.
Abstract translation: 一种制造半导体器件的方法包括以下步骤：（a）形成具有碳和氟的气体的等离子体，以及使用等离子体形成在基板上形成的氟掺杂碳膜的内部绝缘膜; （b）在内部绝缘膜上形成金属膜; （c）根据图案蚀刻金属膜以形成硬掩模; （d）通过使用硬掩模蚀刻氟掺杂碳膜，在氟掺杂碳膜中形成凹部; （e）在所述基板上形成布线材料，以用所述布线材料填充所述凹部; （f）除去氟掺杂碳膜上的布线材料和硬掩模的多余部分，以暴露氟掺杂碳膜的表面; 和（g）去除在氟掺杂膜的表面上形成的氧化物。
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公开(公告)号：KR1020090113749A
公开(公告)日：2009-11-02
申请号：KR1020080113406
申请日：2008-11-14
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/302
CPC classification number: H01L21/67742 , H01L21/67005 , H01L21/67196
Abstract: PURPOSE: A substrate processing apparatus is provided to prevent leakage of the poisonous gas generated in a process by performing cleaning in the transfer chamber. CONSTITUTION: At least one process chambers(21a,21b,21c,21d) is to carry out the processing of the processed substrate. The transfer chamber(14) is adjacent to the process chamber. The vacuum pump(16) depresses the inside of the transfer chamber and loadlock chamber(12a,12b). The transfer system(15) transfers the processed substrate to a space between the transfer chamber and process chamber. The debris removal means removes the foreign material adhered to the transfer chamber. The debris removal means includes the illuminating unit which irradiates the light to the transfer system.
Abstract translation: 目的：提供一种基板处理装置，用于通过在传送室中进行清洁来防止在该过程中产生的有毒气体的泄漏。 构成：至少一个处理室（21a，21b，21c，21d）是对处理后的基板进行处理。 传送室（14）与处理室相邻。 真空泵（16）压下传送室和装载室（12a，12b）的内部。 传送系统（15）将经处理的基板传送到传送室和处理室之间的空间。 碎屑去除装置去除附着在传送室上的异物。 碎片去除装置包括将光照射到传送系统的照明单元。
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Patent Agency Ranking
公开(公告)号：KR1020090094363A
公开(公告)日：2009-09-04
申请号：KR1020097014154
申请日：2008-02-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H01L21/304 , H01L21/768
CPC classification number: H01L21/76808 , H01L21/31138 , H01L21/76814 , H01L21/76826 , H01L21/76835
Abstract: Provided is an etching method wherein a fluorine-added carbon film formed on a substrate is etched by plasma. The method includes a first step of performing etching with plasma of an oxygen-containing treatment gas, and a second step of performing etching with plasma of a fluorine-containing treatment gas.
Abstract translation: 提供了一种蚀刻方法，其中通过等离子体蚀刻在基板上形成的添加氟的碳膜。 该方法包括用含氧处理气体的等离子体进行蚀刻的第一步骤，以及利用含氟处理气体的等离子体进行蚀刻的第二步骤。
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公开(公告)号：KR1020090084705A
公开(公告)日：2009-08-05
申请号：KR1020090006866
申请日：2009-01-29
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/68 , H01L21/205 , H01L21/3065
CPC classification number: H01L21/68728 , H01L21/68735
Abstract: A plasma processing apparatus is provided to polish the upper side of the loading table with the state removing the ring member by processing the upper side of the loading table flat. The process gas supplied to a process chamber(20) becomes plasma. A loading table(21) loading a substrate on the upper side is installed within the process chamber. The positioning pin positioning the peripheral part of substrate is protruded from the plural number portion on the upper side of the loading table. The positioning pin(25) is inserted into the concave part(26) formed on the upper side of the loading table. An electrode(23) absorbing the substrate replaced on the upper side of loading table.
Abstract translation: 提供了一种等离子体处理装置，用于通过处理装载台平面的上侧来去除环件的状态来抛光装载台的上侧。 供给到处理室（20）的工艺气体变成等离子体。 装载在上侧的基板的装载台（21）安装在处理室内。 定位基板的周边部分的定位销从装载台的上侧的多个部分突出。 定位销（25）插入到形成在装载台的上侧的凹部（26）中。 吸收在基板的上侧更换的基板的电极（23）。
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公开(公告)号：KR1020090080897A
公开(公告)日：2009-07-27
申请号：KR1020090004118
申请日：2009-01-19
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: H01L21/67248 , H01L21/67098
Abstract: A temperature control device and a process apparatus using the same are provided to perform a control of high precision by non-interfering a control between each channel. A process apparatus performs a predetermined process about a substrate loaded inside a process vessel. A temperature control unit(50) performs a temperature control about a predetermined part of the process vessel or a predetermined member. The temperature control unit includes a heater unit(51), a feeding part(52), a temperature sensor(53), and a controller(54). The heater unit heats a control object. The feeding part feeds a power to the heater unit. The temperature sensor measures temperature of the control object. The controller controls the feeding part based on a signal of the temperature sensor through ILQ control.
Abstract translation: 提供了一种温度控制装置和使用该控制装置的处理装置，以通过不干扰每个通道之间的控制来执行高精度的控制。 处理装置执行关于装载在处理容器内部的基板的预定处理。 温度控制单元（50）执行关于处理容器或预定构件的预定部分的温度控制。 温度控制单元包括加热器单元（51），馈送部分（52），温度传感器（53）和控制器（54）。 加热器单元加热控制对象。 进料部分向加热器单元供电。 温度传感器测量控制对象的温度。 控制器通过ILQ控制器根据温度传感器的信号控制进给部分。
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公开(公告)号：KR1020090031615A
公开(公告)日：2009-03-26
申请号：KR1020097002796
申请日：2007-08-08
Applicant: 도쿄엘렉트론가부시키가이샤
CPC classification number: C23C14/568 , C23C14/228 , C23C16/54 , H01L51/56 , H01L51/0008 , H01L51/0028
Abstract: [PROBLEMS] To provide a film forming system, which eliminates mutual contamination of layers formed in a manufacturing process of an organic EL element and the like, and furthermore, has a small footprint and a high productivity. [MEANS FOR SOLVING PROBLEMS] A film forming apparatus (13) for forming a film on a substrate (G) has a first film forming mechanism (35) for forming a first layer, and a second film forming mechanism (36) for forming a second layer, in a processing chamber (30). The first film forming mechanism (35) is provided with a nozzle (34), which is arranged inside the processing chamber (30) and supplies the substrate with vapor of a film forming material; a vapor generating section (45), which is arranged outside the processing chamber and generates the vapor of the film forming material; and a piping (46) for supplying the vapor of the film forming material generated by the vapor generating section (45) to the nozzle (34).
Abstract translation: [问题]提供一种成膜系统，其消除了在有机EL元件的制造过程中形成的层的相互污染等，此外，具有小的占地面积和高的生产率。 解决问题的手段在基板（G）上形成膜的成膜装置（13）具有形成第一层的第一成膜机构（35）和形成第一层的第二成膜机构（36） 第二层，在处理室（30）中。 第一成膜机构（35）设置有喷嘴（34），其设置在处理室（30）的内部，并且向基板供给成膜材料的蒸气; 蒸汽发生部分（45），其布置在处理室外部并产生成膜材料的蒸气; 以及用于将由蒸汽发生部分（45）产生的成膜材料的蒸汽供应到喷嘴（34）的管道（46）。
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公开(公告)号：KR1020080059660A
公开(公告)日：2008-06-30
申请号：KR1020087012261
申请日：2006-11-15
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/3065 , H05H1/46
CPC classification number: H05H1/46 , H01J37/32192 , H01J37/32211
Abstract: A microwave introduction device includes a microwave generator for generating microwaves of a predetermined frequency, a mode converter for converting the microwaves into a predetermined amplitude mode, a flat antenna member arranged toward a predetermined space, and a coaxial waveguide connecting the mode converter and the flat antenna member for propagation of the microwaves. The coaxial waveguide has a central conductor formed into a cylindrical shape having an inner diameter D1 not smaller than a first predetermined value and an outer conductor also formed into a cylindrical form. The ratio r1/r2 of the radius r1 of the inner diameter of the outer conductor against the radius r2 of the outer diameter of the central conductor is maintained at a second predetermined value. The outer conductor has an inner diameter D2 not greater than the a third predetermined value.
Abstract translation: 微波引入装置包括用于产生预定频率的微波的微波发生器，用于将微波转换成预定振幅模式的模式转换器，朝向预定空间布置的平坦天线构件和连接模式转换器和平面的同轴波导 用于微波传播的天线构件。 同轴波导具有形成为具有不小于第一预定值的内径D1的圆柱形状的中心导体，并且外部导体也形成为圆柱形。 外导体的内径的半径r1与中心导体的外径的半径r2的比r1 / r2保持在第二规定值。 外导体的内径D2不大于第三预定值。
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