公开(公告)号：KR1020070007260A

公开(公告)日：2007-01-15

申请号：KR1020067012569

申请日：2004-12-24

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 야마모토타로 ,  요시하라코우스케 ,  쿄다히데하루 ,  타케구찌히로후미 ,  오코우치아츠시

IPC: H01L21/027

CPC classification number: G03F7/3028 ,  G03F7/3021 ,  H01L21/6715

Abstract: Temperature of a developing liquid is regulated according to the types of a resist or a resist pattern. A developing liquid is scan-sprayed by a developing liquid nozzle having a slit-form ejection outlet with a length corresponding to the width of an effective area of a substrate. After a developing liquid piled up on the substrate and kept held for a specified time, diluent is scan-sprayed by a diluent nozzle. This substantially stops a developing reaction and diffuses a resist solution component. Thus, a desired amount of resist is quickly dissolved by the temperature regulation of a developing liquid, while developing is stopped by supplying a diluent at a specified timing before an adverse effect is caused by a resist solution component, whereby a pattern with a uniform line width can be obtained and throughput is improved. ® KIPO & WIPO 2007

Abstract translation: 显影液的温度根据抗蚀剂或抗蚀剂图案的种类进行调节。 显影液被具有狭缝形喷射出口的显影液体喷嘴扫描喷射，其长度对应于基底的有效面积的宽度。 将显影液堆积在基片上并保持一定时间后，用稀释剂喷嘴对稀释剂进行扫描。 这基本上停止显影反应并扩散抗蚀剂溶液成分。 因此，通过显影液的温度调节，所需量的抗蚀剂迅速溶解，同时通过在由抗蚀剂溶液成分引起不利影响的规定时间内供给稀释剂来停止显影，由此形成具有均匀线的图案 可以获得宽度并提高生产量。 ®KIPO＆WIPO 2007

公开(公告)号：KR1020060090212A

公开(公告)日：2006-08-10

申请号：KR1020060068647

申请日：2006-07-21

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 키타노준이치 ,  마츠야마유지 ,  키타노타카히로 ,  카타노타카유키 ,  마츠이히데후미 ,  스즈키요 ,  야마시타마사미 ,  아오야마토루 ,  이와키히로유키 ,  시무라사토루 ,  데구치마사토시 ,  요시하라코우스케 ,  이이다나루아키

IPC: H01L21/027

CPC classification number: H01L21/67178 ,  G03F7/70991 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67184 ,  H01L21/67742 ,  H01L21/67778 ,  Y10T29/41 ,  G03F7/70875 ,  H01L21/67098

Abstract: 도포현상 처리시스템에 있어서 경계판에 의해 나누어진 각 영역, 즉 카세트 스테이션, 처리 스테이션 및 인터페이스부의 상부에 각 영역 내로 불활성 기체를 공급하는 기체 공급부를 각각 설치한다. 상기 각 영역의 하부에는 각 영역 내의 분위기를 배기하기 위한 배기관을 설치한다. 각 기체 공급장치로 산소 등의 불순물이나 미립자를 포함하지 않는 불활성 기체를 각 영역 내로 공급하고 각 영역 내의 분위기를 배기관으로 배기함으로써 각 영역 내의 분위기를 청정한 상태로 유지한다.

公开(公告)号：KR1020030019138A

公开(公告)日：2003-03-06

申请号：KR1020020050805

申请日：2002-08-27

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시하라코우스케 ,  타나카케이이치 ,  야마모토타로 ,  쿄우다히데하루 ,  타케구치히로푸미 ,  오코우치아츠시

IPC: H01L21/027

CPC classification number: H01L21/6715 ,  G03D3/06 ,  G03F7/3021

Abstract: PURPOSE: A method for developing processing and an apparatus for supplying developing solution are to provide an appropriate method for a developing processing conforming to the characteristics of the resist material relative to the developing solution. CONSTITUTION: A method for a developing processing of a resist film comprises steps of adjusting the concentration of a developing solution in accordance with the characteristics of the resist film and applying a developing processing to the resist film using the concentration-adjusted developing solution.

Abstract translation: 目的：开发处理方法和提供显影液的设备是提供一种适用于与抗蚀剂材料相对于显影液的特性一致的显影处理的方法。 构成：抗蚀剂膜的显影处理方法包括根据抗蚀剂膜的特性调节显影液的浓度并使用浓度调节显影液对抗蚀剂膜进行显影处理的步骤。

公开(公告)号：KR1020020010442A

公开(公告)日：2002-02-04

申请号：KR1020010004660

申请日：2001-01-31

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 키타노준이치 ,  마츠야마유지 ,  키타노타카히로 ,  카타노타카유키 ,  마츠이히데후미 ,  스즈키요 ,  야마시타마사미 ,  아오야마토루 ,  이와키히로유키 ,  시무라사토루 ,  데구치마사토시 ,  요시하라코우스케 ,  이이다나루아키

IPC: H01L21/30

CPC classification number: H01L21/67178 ,  G03F7/70991 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67184 ,  H01L21/67742 ,  H01L21/67778 ,  Y10T29/41

Abstract: PURPOSE: A substrate processing apparatus and method are provided to prevent an adhesion of fine impurities or particles on a substrate and to improve a uniformity of line-width between substrates. CONSTITUTION: On top of respective areas divided by partition plates, that is, a cassette station(2), a processing station(3), and an interface section(4) in a coating and developing processing system, gas supply sections(70,71,72) for supplying an inert gas into the respective areas are provided. Exhaust pipes(75,76,77) for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes(75,76,77).

Abstract translation: 目的：提供基板处理装置和方法，以防止细小的杂质或颗粒附着在基板上并提高基板之间的线宽的均匀性。 构成：在涂覆和显影处理系统中，由分隔板（即，盒式磁带站（2）），处理站（3）和接口区段（4）分隔的各个区域之上， 71,72）用于将惰性气体供应到各个区域。 在各个区域的底部设置用于排出各区域的气氛的排气管（75,76,77）。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域并且从排气管（75）排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态 ，76,77）。

公开(公告)号：KR1020010050979A

公开(公告)日：2001-06-25

申请号：KR1020000059961

申请日：2000-10-12

Applicant: 도쿄엘렉트론가부시키가이샤

Inventor： 요시하라코우스케 ,  후지모토아키히로

IPC: H01L21/027

CPC classification number: H01L21/6715

Abstract: PURPOSE: An apparatus for processing a substrate is provided to prevent an increasing phenomenon of an edge portion of a coated layer by coating uniformly a resist layer. CONSTITUTION: A spin chuck(10) is used for absorbing and keeping a wafer(W) and rotating and elevating the wafer(W). A supply nozzle(11) is formed on an upper portion of the spin chuck(10) in order to drop a resist solution on the wafer(W). The supply nozzle(11) is connected with a resist solution tank(14) through a supply tube(12) and a control valve(13). The supply nozzle(11) is formed at a front end portion of a Z drive portion(15) by a folder(17). A base portion of the Z drive portion(15) is supported by a Y-directional mobile portion(16). An air flow control plate(25) is installed at a gap between the wafer(W) and an inner circumference of a cup(24). An exhaust tube(30) is installed under the cup(24). The exhaust tube(30) is connected with a pump(32) through a control valve(31).

Abstract translation: 目的：提供一种用于处理基板的设备，以通过均匀地涂覆抗蚀剂层来防止涂层边缘部分的增加的现象。 构成：旋转卡盘（10）用于吸收和保持晶片（W）并旋转和升高晶片（W）。 供给喷嘴（11）形成在旋转卡盘（10）的上部，以便将抗蚀剂溶液落在晶片（W）上。 供给喷嘴（11）通过供给管（12）和控制阀（13）与抗蚀剂溶液罐（14）连接。 供给喷嘴（11）通过夹子（17）形成在Z驱动部（15）的前端部。 Z驱动部（15）的基部由Y方向移动部（16）支撑。 气流控制板（25）安装在晶片（W）与杯（24）的内周之间的间隙处。 排气管（30）安装在杯（24）的下方。 排气管（30）通过控制阀（31）与泵（32）连接。