公开(公告)号：KR1020050005726A

公开(公告)日：2005-01-14

申请号：KR1020030098232

申请日：2003-12-27

Applicant: 삼성전자주식회사

Inventor： 김경석 ,  박홍배 ,  김봉현 ,  김성태 ,  권종완 ,  이정현 ,  김기철 ,  임재순 ,  남갑진 ,  김영선

IPC: H01L21/205

CPC classification number: H01L21/0228 ,  C23C16/308 ,  C23C16/45531 ,  C23C16/56 ,  H01L21/02175 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3143 ,  H01L21/31645

Abstract: PURPOSE: A method of forming a high dielectric layer using an atomic layer deposition method and a method of manufacturing a capacitor having the high dielectric layer are provided to improve leakage current characteristics by reducing defects in the high dielectric layer. CONSTITUTION: A precursor including metal elements is supplied and a purging process is performed. An oxidizing agent is supplied and a purging process is performed. A reaction source including a nitrogen element is supplied and a purging process is performed. The precursor including metal elements is formed with an Hf precursor and a high dielectric layer is formed with an HfON layer.

Abstract translation: 目的：提供使用原子层沉积法形成高介电层的方法和制造具有高介电层的电容器的方法，以通过减少高介电层中的缺陷来改善泄漏电流特性。 构成：提供包含金属元素的前体并进行清洗处理。 供给氧化剂，进行清洗处理。 供给包括氮元素的反应源，进行清洗处理。 包含金属元素的前体由Hf前体形成，并且用HfON层形成高介电层。

公开(公告)号：KR1020040104003A

公开(公告)日：2004-12-10

申请号：KR1020030035347

申请日：2003-06-02

Applicant: 삼성전자주식회사

Inventor： 권종완 ,  김성태 ,  김영선 ,  남갑진 ,  임재순 ,  김기철 ,  최한메

IPC: H01L21/205

Abstract: PURPOSE: An atomic layer deposition system and a method of vaporizing an atomic layer deposition source are provided to prevent the decomposition of the liquefied source generated from a process for heating the liquefied source and acquire stably high-density source without altering the atomic layer deposition system. CONSTITUTION: A transport gas tube(100) is used for transporting a gas. A source container(200) is used for storing a liquefied source including a deposition element and includes a sprayer for spraying the liquefied source. An intermediate gas tube(300) is used for transferring the sprayed source from the source container. A heating container(400) is used for storing the sprayed source and heating the sprayed source. A source gas tube(500) is used for transferring the heated source. A deposition chamber(600) is used for depositing the heated source.

Abstract translation: 目的：提供原子层沉积系统和蒸发原子层沉积源的方法，以防止由液化源加热产生的液化源的分解并获得稳定的高密度源而不改变原子层沉积系统 。 构成：运输气体管（100）用于输送气体。 源容器（200）用于存储包括沉积元件的液化源，并且包括用于喷射液化源的喷雾器。 中间气体管（300）用于从源容器转移喷射源。 加热容器（400）用于储存喷射源并加热喷射源。 源气体管（500）用于传送加热的源。 沉积室（600）用于沉积加热的源。

公开(公告)号：KR1020040036019A

公开(公告)日：2004-04-30

申请号：KR1020020064771

申请日：2002-10-23

Applicant: 삼성전자주식회사

Inventor： 김성태 ,  김영선 ,  남갑진 ,  김완돈 ,  임재순 ,  김기철

IPC: H01L21/8242

Abstract: PURPOSE: A semiconductor device having a cylinder type storage node is provided to be capable of minimizing the deformation of the storage node due to a post heat treatment. CONSTITUTION: A semiconductor device has a cylinder type storage node(47), wherein the storage node is made of a polysilicon layer(43) and a metal containing layer(45). Preferably, the metal containing layer is made of precious metal or metal nitride. The lower portion of the cylinder type storage node is supported by a supporter layer(21) and an etch stop layer(31) formed on the supporter layer. Preferably, a surface oxidation barrier is formed between the cylinder type storage node and a dielectric layer. Preferably, the surface oxidation barrier is made of one selected from a group consisting of the first silicon nitride layer deposited by an ALD(Atomic Layer Deposition) method, the second silicon nitride layer deposited by an RTN(Rapid Thermal Nitridation) method, or an oxide aluminum layer.

Abstract translation: 目的：提供一种具有圆筒型存储节点的半导体器件，以能够使由后热处理引起的存储节点的变形最小化。 构成：半导体器件具有圆柱形存储节点（47），其中存储节点由多晶硅层（43）和含金属层（45）制成。 优选地，含金属层由贵金属或金属氮化物制成。 圆筒型存储节点的下部由支撑层（21）和形成在支撑层上的蚀刻停止层（31）支撑。 优选地，在圆柱型存储节点和电介质层之间形成表面氧化屏障。 优选地，表面氧化屏障由选自由ALD（原子层沉积）方法沉积的第一氮化硅层，通过RTN（快速热氮化）法沉积的第二氮化硅层，或 氧化铝层。

公开(公告)号：KR1020030015000A

公开(公告)日：2003-02-20

申请号：KR1020010049036

申请日：2001-08-14

Applicant: 삼성전자주식회사

Inventor： 임재순 ,  이승환 ,  최한메 ,  이윤정 ,  남갑진 ,  박기연 ,  김영선 ,  김성태

IPC: H01L27/04

CPC classification number: H01L28/55

Abstract: PURPOSE: A method of forming a capacitor of a semiconductor device for improving a characteristic of a leakage current on a boundary between a dielectric layer and an upper electrode are provided to improve the characteristic of a leakage current by restraining an unstable state of the boundary between the dielectric layer and the upper electrode. CONSTITUTION: A bottom electrode is formed on a semiconductor substrate(110). At this time, an interlayer dielectric is arranged between the semiconductor substrate and the bottom electrode. A rapid thermal nitridation process is performed(120). A bugger layer is formed between the interlayer dielectric and the bottom electrode. A dielectric layer is formed on the buffer layer(130). A top electrode is formed on the bottom electrode(140). The first thermal process is performed under temperature of 200 to 250 degrees centigrade by using O2 gas or N2O gas or O3 gas(150). The second thermal process is performed under vacuum atmosphere(160).

Abstract translation: 目的：提供一种形成用于提高电介质层和上电极之间的边界上的漏电流特性的半导体器件的电容器的方法，以通过抑制漏电流的不稳定状态来改善漏电流的特性 电介质层和上电极。 构成：在半导体衬底（110）上形成底部电极。 此时，在半导体衬底和底部电极之间设置层间电介质。 进行快速热氮化处理（120）。 在层间电介质和底部电极之间形成虫洞层。 在缓冲层（130）上形成介电层。 顶部电极形成在底部电极（140）上。 第一次热处理通过使用O 2气体或N 2 O气体或O 3气体（150）在200至250摄氏度的温度下进行。 第二热处理在真空气氛（160）下进行。

公开(公告)号：KR1020010017820A

公开(公告)日：2001-03-05

申请号：KR1019990033520

申请日：1999-08-14

Applicant: 삼성전자주식회사

Inventor： 김영관 ,  박흥수 ,  박영욱 ,  이상인 ,  장윤희 ,  이종호 ,  최성제 ,  이승환 ,  임재순 ,  이주원

IPC: H01L27/10

CPC classification number: H01L21/28194 ,  H01L28/55 ,  H01L28/60 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: PURPOSE: A semiconductor device is provided to improve an insulating characteristic of a dielectric layer and to increase capacitance of a capacitor structure, by forming the dielectric layer by an atomic layer deposition method when a polysilicon layer is used as a storage electrode, and by forming a plate electrode with a material layer of which a work function is higher than the storage electrode. CONSTITUTION: The first electrode(31) is composed of a silicon-based material. Reaction materials are sequentially supplied to the surface of the first electrode to form a dielectric layer(37). The second electrode(39) is formed on the dielectric layer, and a work function of the second electrode is higher than the first electrode composed of the silicon-based material.

Abstract translation: 目的：提供一种半导体器件，通过在使用多晶硅层作为存储电极时通过原子层沉积法形成电介质层，并且通过形成电介质层的绝缘特性并增加电容器结构的电容， 具有功函数高于存储电极的材料层的平板电极。 构成：第一电极（31）由硅基材料构成。 依次将反应材料提供给第一电极的表面以形成电介质层（37）。 第二电极（39）形成在电介质层上，第二电极的功函数高于由硅基材料构成的第一电极。

公开(公告)号：KR1020000051888A

公开(公告)日：2000-08-16

申请号：KR1019990002591

申请日：1999-01-27

Applicant: 삼성전자주식회사

Inventor： 최성제 ,  김영선 ,  임재순 ,  박흥수

IPC: H01L21/31

Abstract: PURPOSE: A reactor chamber for formation of atomic layer and formation method of a medium film using the same is to allow a medium film to be deposited completely and uniformly regardless of inflow and outflow of gas within a short time. CONSTITUTION: A reactor chamber(40) for formation of atomic layer comprises: a wafer stage(42); a shower head(46) disposed on the wafer stage; a pumping port(52) disposed at a bottom(50) around the wafer stage and through which a source gas outflows; an inner wall(56) disposed at a wall of the reactor chamber around the shower head and the wafer stage and having a predetermined thickness; and an inner bottom(54) disposed on the bottom of the reactor chamber around the wafer stage, for exposing the pumping port. The thickness of the inner wall is the same with or the thickness is smaller than an interval between the chamber wall and the pumping port to degree such that the inner wall is not in contact with the shower head.

Abstract translation: 目的：用于形成原子层的反应室和使用其的介质膜的形成方法是允许中等膜完全和均匀地沉积，而不管在短时间内气体的流入和流出。 构成：用于形成原子层的反应室（40）包括：晶片台（42）; 设置在晶片台上的淋浴头（46） 设置在晶片台周围的底部（50）处的泵送口（52），源气体通过该端口流出; 设置在所述反应室的壁周围的所述淋浴喷头和所述晶片台并具有预定厚度的内壁（56） 以及设置在所述反应器壳体的底部周围的所述晶片台的内底部（54），用于暴露所述泵送端口。 内壁的厚度与室壁和泵送口之间的间隔相同或厚度小于内壁不与淋浴头接触的程度。

公开(公告)号：KR101929224B1

公开(公告)日：2018-12-14

申请号：KR1020120080195

申请日：2012-07-23

Applicant: 삼성전자주식회사

Inventor： 박민영 ,  김윤수 ,  강상열 ,  유차영 ,  임재순 ,  최재형

IPC: H01L21/02 ,  C23C16/455

Abstract: 반도체 소자의 제조 방법을 제공한다. 이 방법은 반도체 기판을 공정 챔버 내로 로딩하고, 상기 공정 챔버 내의 상기 반도체 기판 상에 증착 막을 형성하는 것을 포함한다. 상기 증착 막을 형성하는 것은 상기 반도체 기판 상에 단위 층을 반복적으로 형성하는 것을 포함한다. 상기 증착 막이 형성된 반도체 기판을 상기 공정 챔버로부터 언로딩한다. 상기 단위 층을 형성하는 것은 상기 공정 챔버 내에 전구체 물질 및 막-제어 물질을 포함하는 공정 물질을 공급하여 상기 반도체 기판 상에 예비 단위 층을 형성하되, 상기 전구체 물질은 중심 원자 및 상기 중심 원자와 결합된 리간드를 포함하고, 상기 막-제어 물질은 상기 전구체 물질의 상기 리간드의 수소 화합물이고, 상기 예비 단위 층을 갖는 반도체 기판이 위치하는 상기 공정 챔버를 제1 퍼지하고, 상기 제1 퍼지된 공정 챔버 내의 상기 예비 단위 층을 단위 층으로 형성하고, 상기 단위 층을 갖는 반도체 기판이 위치하는 상기 공정 챔버를 제2 퍼지하는 것을 포함한다.

公开(公告)号：KR101770314B1

公开(公告)日：2017-08-23

申请号：KR1020110019261

申请日：2011-03-04

Applicant: 삼성전자주식회사

Inventor： 강상열 ,  정숙진 ,  김윤수 ,  최재형 ,  임재순 ,  박민영

IPC: H01L21/3205 ,  H01L21/02 ,  H01L21/28 ,  H01L27/108 ,  H01L29/51 ,  H01L49/02

CPC classification number: H01L28/60 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02189 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28194 ,  H01L27/10808 ,  H01L27/10814 ,  H01L27/10855 ,  H01L28/40 ,  H01L29/517 ,  H01L29/78

Abstract: 유전막형성방법및 이를이용한반도체소자의제조방법이개시된다. 중심금속및 중심금속에결합된리간드를포함하는유기금속전구체를공정챔버내에로딩된기판상에흡착시킨다. 유기금속전구체와반응가능한비활성산화제를상기기판상에공급한다. 비활성산화제보다반응성이활성산화제를상기기판상에공급한다. 비활성산화제와활성산화제를모두사용함으로서상호단점이보완되어유전막의막질및 전기적특성을향상시킬수 있다.

Abstract translation: 公开了一种形成介电膜的方法和使用该方法制造半导体器件的方法。 包含结合到中心金属和中心金属的配体的有机金属前体被吸附到加载到处理室中的基底上。 将能够与有机金属前体反应的惰性氧化剂供给到基材上。 将比惰性氧化剂更具反应性的活性氧化剂供应到基材上。 通过使用惰性氧化剂和活性氧化剂两者，可以补偿相互的缺点，并且可以改善介电膜的膜质和电特性。

公开(公告)号：KR1020110064269A

公开(公告)日：2011-06-15

申请号：KR1020090120778

申请日：2009-12-07

Applicant: 삼성전자주식회사

Inventor： 강상열 ,  김윤수 ,  최재형 ,  임재순 ,  박민영 ,  정숙진

IPC: H01L27/108

CPC classification number: H01L28/40 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02194 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/28273 ,  H01L27/10852

Abstract: PURPOSE: A semiconductor device, a manufacturing method thereof, and a semiconductor module, an electronic circuit board, and an electronic system with the semiconductor device are provided to increase the performance and durability of the semiconductor device. CONSTITUTION: A lower non-oxide dielectric film is formed on a lower electrode(120). An oxide dielectric film(140) is formed on the lower non-oxide dielectric film. An upper non-oxide dielectric film(150) is formed on the oxide dielectric film. An upper electrode(160) is formed on the upper non-oxide dielectric film. An upper layer(170) is formed on the upper electrode.

Abstract translation: 目的：提供半导体器件及其制造方法以及半导体模块，电子电路板以及具有半导体器件的电子系统，以提高半导体器件的性能和耐久性。 构成：在下电极（120）上形成较低的非氧化物介电膜。 在下部非氧化物电介质膜上形成氧化物电介质膜（140）。 在氧化物电介质膜上形成上部非氧化物介电膜（150）。 在上部非氧化物电介质膜上形成上部电极（160）。 上层（170）形成在上电极上。

公开(公告)号：KR1020100089522A

公开(公告)日：2010-08-12

申请号：KR1020090008812

申请日：2009-02-04

Applicant: 삼성전자주식회사

Inventor： 김완돈 ,  조규호 ,  김진용 ,  최재형 ,  임재순 ,  권오성 ,  김범석 ,  탁용석

IPC: H01G9/04 ,  H01G9/02 ,  H01G9/00

CPC classification number: H01G4/33 ,  H01G4/008 ,  H01G4/12 ,  H01G4/224 ,  H01L27/10852 ,  H01L28/91

Abstract: PURPOSE: A capacitor and a manufacturing method thereof are provided to prevent the increase of leak current due to the grain growth of a top electrode by forming a capping layer which restrains the grain growth of the upper electrode. CONSTITUTION: A bottom electrode(112) is formed on a substrate(100). A dielectric layer(114) is formed on the surface of the lower electrode by laminating the metal oxide. An upper electrode(116) is formed on the surface of the insulation layer by depositing the material including the metal. A capping layer(118) is formed by depositing the metal oxide to cover the upper side whole of the upper electrode.

Abstract translation: 目的：提供一种电容器及其制造方法，通过形成限制上部电极的晶粒生长的覆盖层，防止由于顶部电极的晶粒生长引起的漏电流的增加。 构成：在基板（100）上形成底部电极（112）。 通过层叠金属氧化物，在下电极的表面上形成电介质层（114）。 通过沉积包括金属的材料，在绝缘层的表面上形成上电极（116）。 通过沉积金属氧化物以覆盖上电极的上侧整体来形成覆盖层（118）。