公开(公告)号：KR1020060017452A

公开(公告)日：2006-02-23

申请号：KR1020040092686

申请日：2004-11-12

Applicant: 삼성전자주식회사

Inventor： 이광희 ,  김진용 ,  정숙진 ,  조규호 ,  임한진 ,  이진일 ,  김기철 ,  임재순

IPC: H01L27/04

CPC classification number: H01L28/65 ,  H01L21/02244 ,  H01L21/02337 ,  H01L21/0234

Abstract: 엠아이엠 커패시터의 형성방법들 및 그에 의해 제조된 엠아이엠 커패시터들을 제공한다. 엠아이엠 커패시터를 형성하는 방법들은 반도체기판 상에 하부전극을 형성하는 것을 구비한다. 상기 하부전극 상에 하부 유전막을 형성하고, 상기 하부 유전막 상에 상부 유전막을 형성한다. 상기 하부 유전막은 상기 상부 유전막 보다 큰 에너지 밴드 갭을 갖는 유전막으로 형성한다. 상기 상부 유전막 상에 상부전극을 형성한다. 상기 상부전극은 상기 하부전극 보다 큰 일 함수를 갖는 금속막으로 형성한다.
엠아이엠 커패시터, 고유전막, 누설전류, 금속 전극

公开(公告)号：KR1020040064960A

公开(公告)日：2004-07-21

申请号：KR1020030001955

申请日：2003-01-13

Applicant: 삼성전자주식회사

Inventor： 조규호

IPC: H04M1/00

Abstract: PURPOSE: A method for managing a text message account of a wired communication terminal is provided to confirm whether an account of a received text message is identical with a receiver parameter, and to store the text message in an inbox category of a receiver if the account is identical, then to permit a usage of the inbox category through user authentication, thereby separately managing transmitting/receiving messages according to each account. CONSTITUTION: When a text message is received, a terminal confirms the received text message(310). The terminal confirms a receiver parameter of the received text message(312). The terminal stores the received text message in an inbox category of a receiver on a corresponding account(314). If the account of the receiver is not registered when confirming the receiver parameter, the received text message is stored in a common inbox category.

Abstract translation: 目的：提供一种用于管理有线通信终端的文本消息帐户的方法，以确认所接收的文本消息的帐户是否与接收方参数相同，并且将文本消息存储在接收者的收件箱类别中，如果该帐户 是相同的，然后允许通过用户认证使用收件箱类别，从而根据每个帐户分别管理发送/接收消息。 构成：当收到短信时，终端确认收到的短信（310）。 终端确认接收的文本消息的接收机参数（312）。 终端将接收到的文本消息存储在对应帐户（314）上的接收者的收件箱类别中。 如果在确认接收器参数时未注册接收器的帐户，则所接收的短信将被存储在通用收件箱类别中。

公开(公告)号：KR102017526B1

公开(公告)日：2019-09-03

申请号：KR1020120106209

申请日：2012-09-25

Applicant: 삼성전자주식회사

Inventor： 홍준석 ,  노상익 ,  이호철 ,  조규호 ,  김재진 ,  김종훈

IPC: G06F16/00 ,  G06F17/20

公开(公告)号：KR1020150038808A

公开(公告)日：2015-04-09

申请号：KR1020130116462

申请日：2013-09-30

Applicant: 삼성전자주식회사

Inventor： 조규호 ,  양현정 ,  오세훈 ,  이용재 ,  임기빈 ,  임재순 ,  임한진 ,  장재완 ,  정창화

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L28/75 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

Abstract: 반도체장치및 그제조방법이제공된다. 상기반도체장치는, 기판, 상기기판상에형성된하부전극, 상기하부전극상에형성된유전막, 상기유전막상에형성된접착막, 및상기접착막상에형성된상부전극을포함하되, 상기접착막은상기유전막과상기상부전극에접촉하고, 도전성물질을포함한다.

Abstract translation: 提供一种半导体器件及其制造方法。 半导体器件包括衬底; 形成在所述基板上的下电极; 形成在下电极上的电介质膜; 形成在电介质膜上的粘合膜; 以及形成在所述粘合膜上的上电极，其中所述粘合膜附着到所述电介质膜和所述上电极，并且包含导电材料。

公开(公告)号：KR1020140048654A

公开(公告)日：2014-04-24

申请号：KR1020120114870

申请日：2012-10-16

Applicant: 삼성전자주식회사

Inventor： 김범석 ,  권오성 ,  김완돈 ,  장재완 ,  조규호

IPC: H01L27/108 ,  H01L21/8242

CPC classification number: H01L28/60 ,  H01L27/10852 ,  H01L27/10894 ,  H01L28/75 ,  H01L28/91

Abstract: Provided is a capacitor where a lower electrode, a dielectric layer, and an upper electrode are successively stacked. An electrode protection layer is formed on the capacitor. The upper electrode includes a conductive metal oxide. The electrode protection layer includes a sacrificial reaction layer which includes a metal hydrogen compound.

Abstract translation: 提供了下电极，电介质层和上电极连续堆叠的电容器。 在电容器上形成电极保护层。 上电极包括导电金属氧化物。 电极保护层包括含有金属氢化合物的牺牲反应层。

公开(公告)号：KR1020130093800A

公开(公告)日：2013-08-23

申请号：KR1020120000932

申请日：2012-01-04

Applicant: 삼성전자주식회사

Inventor： 홍준석 ,  노상익 ,  백승민 ,  이호철 ,  조규호 ,  김재진 ,  김종훈

IPC: H04L12/70 ,  H04L29/04

CPC classification number: H04L69/22

Abstract: PURPOSE: Apparatus and method for identifying an application by using a packet in a communication system easily identifies an application by updating the communication behavior of a specific client on a data structure which is standardized by a packet unit and analyzed in real time. CONSTITUTION: A mask signature DB (110) includes a mask signature. The mask signature defines variables being used for detecting an application. A matching candidate table (120) stores the comparison results of the packets using the mask signature. The matching candidate table stores and manages the client IP addresses and conditions determining the corresponding applications. The detection engine (130) compares and analyzes packets using the mask signature. [Reference numerals] (110) Mask signature DB; (120) Candidate table; (130) Detection engine

Abstract translation: 目的：通过在通信系统中使用分组来识别应用的装置和方法通过更新特定客户端对由分组单元进行标准化并实时分析的数据结构的通信行为来容易地识别应用。 构成：掩模签名DB（110）包括掩码签名。 掩码签名定义了用于检测应用程序的变量。 匹配候选表（120）使用掩码签名存储分组的比较结果。 匹配候选表存储和管理确定相应应用的客户端IP地址和条件。 检测引擎（130）使用掩码签名比较和分析分组。 （附图标记）（110）掩模签名DB; （120）候选桌; （130）检测引擎

公开(公告)号：KR1020120130967A

公开(公告)日：2012-12-04

申请号：KR1020110049090

申请日：2011-05-24

Applicant: 삼성전자주식회사

Inventor： 김완돈 ,  이승환 ,  김범석 ,  조규호 ,  권오성 ,  최근규 ,  임지은 ,  탁용석

IPC: H01L21/28 ,  H01L27/108 ,  H01L21/8242

CPC classification number: H01L21/823475 ,  H01L21/823456

Abstract: PURPOSE: A semiconductor device having a metal plug and a forming method thereof are provided to prevent a leakage current of a capacitor by forming a buried contact plug and a bottom electrode after removing a temporary electrode. CONSTITUTION: A substrate comprises a first source drain region(31), a second source drain region, and a third source drain region. A first conductive plug comes in contact with the first source drain region. An interlayer insulating film(40) covers the first conductive plug and the substrate. A second conductive plug comes in contact with the second source drain region by vertically passing through the interlayer insulating film. A third conductive plug comes in contact with the third source drain region by vertically passing through the interlayer insulating film.

Abstract translation: 目的：提供一种具有金属塞及其形成方法的半导体器件，以在去除临时电极之后通过形成埋入式接触插塞和底部电极来防止电容器的漏电流。 构成：衬底包括第一源极漏极区域（31），第二源极漏极区域和第三源极漏极区域。 第一导电插头与第一源极漏极区域接触。 层间绝缘膜（40）覆盖第一导电插塞和基板。 第二导电插头通过垂直穿过层间绝缘膜与第二源漏区接触。 通过垂直穿过层间绝缘膜，第三导电插头与第三源漏区接触。

公开(公告)号：KR1020100058905A

公开(公告)日：2010-06-04

申请号：KR1020080117490

申请日：2008-11-25

Applicant: 삼성전자주식회사

Inventor： 임재순 ,  조규호 ,  최재형 ,  김윤수

IPC: H01L21/316

CPC classification number: H01L29/792 ,  H01L21/28282 ,  H01L29/4234 ,  H01L29/513

Abstract: PURPOSE: A semiconductor device including a dielectric layer is provided to offer a doped harfnium dioxide layer having a high dielectric constant by including a doping atom and a tetragonal unit lattices having the ion size bigger than the ion size of a hafnium atom. CONSTITUTION: A doped hafnium oxide layer(110) is located on a substrate(100). A bottom electrode(105) is located between the doped hafnium dioxide layer and a substrate. An upper electrode(120) is located on the doped hafnium dioxide layer. The ion size of the doping atom is bigger than the ion size of the hafnium atom. The doped hafnium dioxide layer comprises the tetragonal unit lattices.

Abstract translation: 目的：提供包括电介质层的半导体器件，通过包括掺杂原子和具有大于铪原子的离子尺寸的离子尺寸的四方晶单位晶格来提供具有高介电常数的掺杂二氧化铪层。 构成：掺杂的氧化铪层（110）位于衬底（100）上。 底部电极（105）位于掺杂的二氧化铪层和基底之间。 上电极（120）位于掺杂的二氧化铪层上。 掺杂原子的离子大小大于铪原子的离子大小。 掺杂的二氧化铪层包括四方晶格单元。

公开(公告)号：KR1020080089807A

公开(公告)日：2008-10-08

申请号：KR1020070032424

申请日：2007-04-02

Applicant: 삼성전자주식회사

Inventor： 김윤수 ,  조규호 ,  이광희 ,  최재형 ,  임재순 ,  김기철

IPC: H01L27/108

CPC classification number: H01L21/02205 ,  H01L21/02197 ,  H01L21/0228

Abstract: A method for manufacturing a semiconductor device and a semiconductor device manufactured thereby are provided to form a thin film at temperature of 400 degrees centigrade and more by using a metal source gas including ketoimine-based ligand. A semiconductor substrate including a transistor, an interlayer dielectric, and a storage node contact is loaded into an inside of a reaction chamber(S110). A first metal source gas is supplied to the inside of the reaction chamber in which the semiconductor substrate is loaded(S120). A first reaction gas is supplied to the inside of the reaction chamber(S130). A second metal source gas is supplied to the inside of the reaction chamber(S140). A second reaction gas is supplied to the inside of the reaction chamber(S150). A thin film of a desired thickness is formed on the semiconductor substrate(S160).

Abstract translation: 提供一种用于制造半导体器件的方法和由其制造的半导体器件，以通过使用包括酮亚胺基配体的金属源气体在400摄氏度和更高的温度下形成薄膜。 包括晶体管，层间电介质和存储节点接触的半导体衬底被加载到反应室的内部（S110）。 第一金属源气体被供给到其中装载半导体衬底的反应室的内部（S120）。 向反应室内供给第一反应气体（S130）。 向反应室内供给第二金属源气体（S140）。 向反应室内供给第二反应气体（S150）。 在半导体衬底上形成所需厚度的薄膜（S160）。

公开(公告)号：KR1020080085542A

公开(公告)日：2008-09-24

申请号：KR1020070027223

申请日：2007-03-20

Applicant: 삼성전자주식회사

Inventor： 김기철 ,  조규호 ,  김윤수 ,  이광희 ,  최재형 ,  임재순

IPC: H01L21/205

CPC classification number: C23C16/4481 ,  C23C16/4401 ,  C23C16/45574

Abstract: A vaporizer for semiconductor manufacturing is provided to reduce the heat of the vaporization chamber and the heater without compromising vaporization efficiency. A vaporizer(100) for semiconductor manufacturing comprises: a vaporization chamber(155) to supply a fluid ejected through a first nozzle(116), while heating and vaporizing the fluid; and vaporization accelerating means to fire carrier through a second nozzle(126) that faces the first nozzle so as to form a vortex(160) by which the fluid is mixed with the carrier. The carrier is ejected toward the direction that faces the fluid substance, at a higher temperature than in the vaporization chamber, so as to cause a vortex to form due to different directions of ejection, and the movement of the vortex generates heat which is transferred to the fluid, so that contamination of the vaporization chamber due to staying of the fluid is prevented, and the heat of the vaporization chamber and the heater(150) can be reduced to a predetermined degree, without compromising the vaporization efficiency.

Abstract translation: 提供了用于半导体制造的蒸发器以减少蒸发室和加热器的热量而不损害蒸发效率。 一种用于半导体制造的蒸发器（100）包括：蒸发室（155），用于在加热和蒸发流体的同时提供通过第一喷嘴（116）喷射的流体; 以及蒸发加速装置，以通过与第一喷嘴相对的第二喷嘴（126）起火载体，以便形成涡流（160），流体与载体混合。 载体在比蒸发室更高的温度下朝向流体物质的方向喷射，从而由于不同的喷射方向而形成涡流，并且涡流的移动产生传递到 流体，从而防止了由于流体滞留导致的蒸发室的污染，并且可以将蒸发室和加热器（150）的热量降低到预定的程度，而不会影响蒸发效率。