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公开(公告)号：KR101570445B1
公开(公告)日：2015-11-20
申请号：KR1020140023336
申请日：2014-02-27
Applicant: 한국과학기술원
IPC: G01J1/02
CPC classification number: G01J5/10 , G01J5/024 , G01J5/20 , G01J2005/068
Abstract: 본발명의실시형태에따른적외선검출기는적외선을감지하여전류신호를출력하는마이크로볼로미터액티브셀; 및상기마이크로볼로미터액티브셀에대한기준전류신호를생성하는기준셀을포함하고, 상기기준셀은병렬연결된 i개의단위웜 셀의묶음 j개가직렬연결된웜 셀어레이구조를갖는복수개의단위웜 셀로구성되며, 상기기준셀은상기단위웜 셀의전기적저항값의 j/i배의전기적저항값을가지고, 상기기준셀은상기단위웜 셀의열 저항값의 1/(i*j) 배의열 저항값을갖지며, 여기서상기 i 및 j는자연수일수 있다.
Abstract translation: 根据本发明实施例的红外探测器包括：微型测辐射热计有源单元，用于感测红外线并输出电流信号; 和参考单元产生用于所述微测活动单元格的参考电流信号，参考单元由多个具有蜗杆单元阵列结构体束连接Ĵ狗一系列平行的单元蠕虫细胞的，i中的单元虫细胞的连接 参考单元具有j的电阻值/ I倍的单元蠕虫细胞的电阻，参考单元是1 /（I * j）的次数耐热性单元蠕虫电池的耐热性 我和j可能是自然数。
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公开(公告)号：KR1020140087568A
公开(公告)日：2014-07-09
申请号：KR1020120158016
申请日：2012-12-31
Applicant: 한국과학기술원
IPC: B81C1/00
Abstract: The present invention relates to a manufacturing method for a MEMS structure which uses a micro machining process for manufacturing a MEMS structure using a sacrificial layer. The manufacturing method for a MEMS structure comprises as follows: a first step which forms a single layer interconnection structure by stacking a sacrificial layer (200), a bottom electrode layer (300), and a nonconductor layer (400) composed of amorphous carbon on a first wafer substrate (100), or forms a repetition layer by alternatively stacking a sacrificial layer, a bottom electrode layer, and a nonconductor layer composed of amorphous carbon on the first wafer substrate (100) and forms a via hole for electrically connecting the bottom electrode layers, in order to form a multiple layer interconnection structure; a second step which bonds a second wafer substrate (500) to the nonconductor layer (400) and grinds the first wafer substrate (100); a third step which forms a MEMS structure (150) by forming a circuit pattern on the first wafer substrate (100); and a fourth step which removes part or all of the sacrificial layer (200) in order to levitate part of the MEMS structure (150).
Abstract translation: 本发明涉及使用微加工工艺制造使用牺牲层的MEMS结构的MEMS结构的制造方法。 MEMS结构的制造方法包括以下步骤：通过将牺牲层（200），底部电极层（300）和由无定形碳组成的非导体层（400）堆叠形成单层互连结构的第一步骤 第一晶片衬底（100），或者通过在第一晶片衬底（100）上交替堆叠牺牲层，底电极层和由非晶碳组成的非导体层形成重复层，并形成用于电连接 底部电极层，以形成多层互连结构; 第二步骤，将第二晶片衬底（500）结合到非导体层（400）并研磨第一晶片衬底（100）; 第三步骤，通过在第一晶片衬底（100）上形成电路图案形成MEMS结构（150）; 以及第四步骤，其去除部分或全部所述牺牲层以便悬浮所述MEMS结构（150）的一部分。
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公开(公告)号：KR101388927B1
公开(公告)日：2014-04-25
申请号：KR1020130027538
申请日：2013-03-14
Applicant: 한국과학기술원
IPC: B81C1/00 , H01L21/027
CPC classification number: B81C1/00023 , B81C3/007 , H01L21/0274
Abstract: Provided is a method for producing an MEMS device using an amorphous carbon film as a sacrificial layer. According to an embodiment of the present invention, the method comprises the steps of: producing a bottom structure including metallic patterns; producing an adhesion reinforcing layer that covers the metallic patterns of the bottom structure and includes at least one among an oxide film, a nitride film, a nitrifying film, and an amorphous silicon film; producing an amorphous carbon film as a sacrificial layer on the adhesion reinforcing layer; producing an insulating and supporting layer on the amorphous carbon film; producing via holes formed in order to penetrate through the insulating and supporting layer and amorphous carbon film and make the bottom structure exposed therethrough sequentially by forming an etching protection film on the insulating and supporting layer, by performing only one photolithography procedure, and by etching the insulating and supporting layer and the amorphous carbon film at a time; producing a top structure including a sensor structure on the insulating and supporting layer; producing at least one through-hole that penetrates through the insulating and supporting layer; and removing the amorphous carbon film through the through-hole so that the bottom structure and top structure are disposed to be separated from each other.
Abstract translation: 提供了使用非晶碳膜作为牺牲层来制造MEMS器件的方法。 根据本发明的实施例，该方法包括以下步骤：产生包括金属图案的底部结构; 制造覆盖底部结构的金属图案并且包括氧化膜，氮化物膜，硝化膜和非晶硅膜中的至少一种的粘合增强层; 在粘合增强层上制造作为牺牲层的无定形碳膜; 在无定形碳膜上产生绝缘和支撑层; 产生通孔，以穿透绝缘支撑层和非晶碳膜，并通过仅在一个光刻步骤上形成蚀刻保护膜，使底部结构依次暴露于其中，并通过蚀刻 绝缘和支撑层和无定形碳膜; 在绝缘和支撑层上产生包括传感器结构的顶部结构; 产生穿过绝缘支撑层的至少一个通孔; 并且通过所述通孔去除所述无定形碳膜，使得所述底部结构和顶部结构被设置成彼此分离。
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公开(公告)号：KR1020130084950A
公开(公告)日：2013-07-26
申请号：KR1020120019277
申请日：2012-02-24
Applicant: 한국과학기술원 , 주식회사 에스알파워
IPC: G01C19/56 , G01C19/5712 , G01C19/5621 , B81B7/02
CPC classification number: G01C19/5712 , B81B7/02 , B81B2201/0242 , G01C19/56 , G01C19/5621
Abstract: PURPOSE: A MEMS based gyroscope is provided to wire the inside and outside of the gyroscope by using a wire connecting method by a silicon tubing conducting pole, thereby enabling the automation by an integral process from the manufacturing of the MEMS based gyroscope to the inspection and final package level. CONSTITUTION: A MEMS based gyroscope comprises a frame (10), the sensor masses (30,32), the detection electrodes (41a,42a,43a,44a,45a,46a,47a,48a) and the sensor mass support springs (36a,36b,38a,38b). The frame is arranged in a bottom wafer substrate in parallel. The sensor masses are sensed as the 1-degree of freedom with the frame in a sensor mode. The sensor masses are sensed as the 2-degree of freedom by the Coliolis force when the external angular velocity is inputted to the frame. The detection electrodes measure each detection displacement of the 2-degrees of freedom by the sensor masses. The sensor mass support springs connect the sensor masses to the frame, and permit the sensor masses to have the detection displacement of the 2-degree of freedom.
Abstract translation: 目的：提供一种基于MEMS的陀螺仪，通过使用硅管导电极的导线连接方法对陀螺仪的内部和外部进行连接，从而通过从基于MEMS的陀螺仪的制造到检查的整体过程实现自动化， 最终包装级别。 构成：基于MEMS的陀螺仪包括框架（10），传感器质量块（30,32），检测电极（41a，42a，43a，44a，45a，46a，47a，48a）和传感器质量支撑弹簧（36a） ，36B，38A，38B）。 框架平行布置在底部晶片衬底中。 在传感器模式下，传感器质量被检测为1度自由度。 当外部角速度输入到框架时，传感器质量由Coliolis力感测为2自由度。 检测电极通过传感器质量测量2度自由度的每个检测位移。 传感器质量支撑弹簧将传感器质量连接到框架，并允许传感器质量具有2度自由度的检测位移。
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公开(公告)号：KR101250447B1
公开(公告)日：2013-04-08
申请号：KR1020110132858
申请日：2011-12-12
Applicant: 한국과학기술원
Abstract: PURPOSE: An MEMS device manufacturing method is provided to obtain excellent performance and shape by easily controlling the thickness of a film according to a device and obtain an MEMS device capable of utilizing an existing semiconductor process. CONSTITUTION: An MEMS device manufacturing method comprises; a step for forming a lower structure(12), a step for a chalcogenide carbon layer; a step for forming insulation-supporting layer on the chalcogenide carbon layer; a step for forming via-holes exposing the lower structure by forming an etched protection layer on the insulation-supporting layer and etching the insulation-supporting layer and the chalcogenide carbon layer; a step for forming an upper structure including a sensor(23) on an insulation-supporting layer; a step for forming one or more through-holes penetrating the insulation-supporting layer; a step for removing the chalcogenide carbon layer through the through-holes in order to arrange the upper and lower structure to be spaced.
Abstract translation: 目的：提供一种MEMS器件制造方法，通过根据器件轻松控制膜的厚度来获得优异的性能和形状，并获得能够利用现有半导体工艺的MEMS器件。 构成：MEMS器件制造方法包括： 形成下部结构（12）的步骤，硫族化物碳层的工序; 在硫族化物碳层上形成绝缘支撑层的步骤; 通过在绝缘支撑层上形成蚀刻保护层并蚀刻绝缘层和硫族化物碳层，形成露出下部结构的通孔的步骤; 在绝缘支撑层上形成包括传感器（23）的上部结构的步骤; 形成穿过绝缘支撑层的一个或多个通孔的步骤; 用于通过通孔去除硫族化物碳层以便将上部和下部结构间隔开的步骤。
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Patent Agency Ranking
公开(公告)号：KR1020130013488A
公开(公告)日：2013-02-06
申请号：KR1020110075169
申请日：2011-07-28
Applicant: 한국과학기술원
CPC classification number: C23C18/1682 , C23C18/1619 , C23C18/1666 , C23C18/1676 , C23C18/168 , C25D5/003 , C25D5/20 , C25D17/001 , C25D17/004 , C25D17/02 , C25D21/02 , C25D21/04
Abstract: PURPOSE: A vacuum plating device and a method are provided to prevent water in plating solution from being evaporated and frozen due to a low pressure in a vacuum, thereby allowing an electroless- or an electro-plating process to be smoothly implemented in the vacuum. CONSTITUTION: A vacuum plating device(10) includes a plating tank(100), a negative plate(220) to be plated, a vacuum chamber(300), a vacuum level controlling device(400), and a heating device(500). The negative plate and a positive plate(210) are horizontally or vertically arranged side by side to be separated from each other at regular intervals inside the plating tank. The plating tank is accommodated inside the vacuum chamber which is controlled to maintain a vacuum. The vacuum level controlling device is connected to the vacuum chamber, and controls vacuum level. The heating device controls the temperature of plating solution which is accommodated inside the plating tank. The vacuum plating device includes a rectifier(600) which is connected to the negative plate and the positive plate in order to apply an electric current. The vacuum plating device includes the plating solution which is an electroless-plating solution including a reductant.
Abstract translation: 目的：提供真空电镀装置和方法，以防止电镀溶液中的水由于真空中的低压而蒸发和冷冻，从而允许在真空中平滑地实现无电镀或电镀工艺。 构成：真空电镀装置（10）包括电镀槽（100），待镀覆的负极板（220），真空室（300），真空度控制装置（400）和加热装置（500） 。 负极板和正极板（210）在水平或垂直方向上并排布置，以在电镀槽内以规则的间隔彼此分离。 电镀槽容纳在真空室内，该真空室被控制以保持真空。 真空度控制装置连接到真空室，并控制真空度。 加热装置控制容纳在电镀槽内的电镀溶液的温度。 真空电镀装置包括与负极板和正极板连接以便施加电流的整流器（600）。 真空电镀装置包括作为包含还原剂的无电镀液的电镀液。
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公开(公告)号：KR101180647B1
公开(公告)日：2012-09-19
申请号：KR1020110002456
申请日：2011-01-10
Applicant: 한국과학기술원
CPC classification number: G01J5/0225 , G01J5/20
Abstract: 본 발명의 일실시예에 따른 마이크로 볼로미터에서 필 팩터를 높이기 위한 픽셀 디자인은, 기판 상부의 반사 금속층을 포함하는 하부층; 상기 하부층 상부의 공동; 상기 공동 상부의 볼로미터층과 그 위의 투과 금속층을 포함하는 상부층; 상기 하부층 및 상기 상부층의 절연을 위한 절연층; 및 상기 상부층을 지지하는 앵커를 포함하는 각 볼로미터 픽셀들의 배열로 이루어진 볼로미터 어레이에 있어서, 상기 볼로미터 픽셀 네 개가 상기 앵커 하나를 공유하는 것을 특징으로 한다.
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公开(公告)号：KR101090722B1
公开(公告)日：2011-12-08
申请号：KR1020100017587
申请日：2010-02-26
Applicant: 한국과학기술원
IPC: H03H17/00
Abstract: 디지털논데시메이션필터에관한것으로서, 연속펄스를이용하여필터탭이구성된논데시메이션필터에관한것이다. 실시예에따른필터회로는하나이상의필터유닛을포함하고, 필터유닛의각각은캐패시터를포함하고, 상기필터유닛은디지털전류신호를입력받아필터계수에기초하여하나의캐패시터에상기전류신호를충전시키고, 상기하나의캐패시터에는다수의샘플각각에대응하는전하가누적하여충전되며, 상기필터계수는상기필터유닛에따라한 샘플간격씩쉬프트되어상기필터유닛에제공되며,, 출력펄스신호에동기화하여충전된캐패시터의전압을출력한다. 실시예에따른필터회로에서, 필터유닛의각각은, 캐패시터와디지털전류신호의입력사이에위치한제 1 스위치; 캐패시터와출력사이에위치한제 2 스위치를더 포함하고, 제 1 스위치는필터계수에기초하여스위칭되고, 제 2 스위치는출력펄스신호에기초하여스위칭되고, 캐패시터의일 단은제 1 스위치및 제 2 스위치에연결이되고, 캐패시터의다른단은그라운드에연결이되는것이바람직하다.
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公开(公告)号：KR1020110092611A
公开(公告)日：2011-08-18
申请号：KR1020100012126
申请日：2010-02-09
Applicant: 한국과학기술원
Abstract: PURPOSE: An apparatus and a method for detecting the transformation of a developable surface are provided to effectively detect the cubical transformation of a soft plane-type object that can be developed to a plane. CONSTITUTION: An apparatus for detecting the transformation of a developable surface comprises a plurality of bending sensors(120), a detection circuit(130), and a processor(140). The bending sensors are arranged at regular intervals along the edge of a developable surface(110) as being divided into two triangle regions that hold one side in common. The detection circuit detects a transformation value according to the transformation of each bending sensor. The processor estimates the transformation of the developable surface according to the transformation values outputted from the detection circuit.
Abstract translation: 目的：提供一种用于检测可显影表面变换的装置和方法，以有效地检测可显影到平面的软平面型物体的立方转换。 构成：用于检测可显影面的变形的装置包括多个弯曲传感器（120），检测电路（130）和处理器（140）。 弯曲传感器沿着可显影表面（110）的边缘以规则间隔布置，被划分为保持一侧共同的两个三角形区域。 检测电路根据每个弯曲传感器的变换来检测变换值。 处理器根据从检测电路输出的变换值估计可显影面的变换。
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公开(公告)号：KR100969864B1
公开(公告)日：2010-07-15
申请号：KR1020080086629
申请日：2008-09-03
Applicant: 한국과학기술원
Abstract: 별도의 신호 입력 없이 CML 타입의 D 플립-플롭을 직렬로 연결하는 것만으로 홀수 분주기를 구성할 수 있는 D 플립-플롭 및 이를 이용한 주파수 홀수 분주기가 개시된다. 본 발명에 따르면, 직렬로 연결된 홀수 개의 D 플립-플롭(flip-flop)으로 구성되는 주파수 홀수 분주기에 있어서, 상기 직렬로 연결된 D 플립-플롭 중 홀수 번째의 D 플립-플롭에는 클록 신호로서 비반전 클록 신호(CLK)가 제공되고, 짝수 번째의 D 플립-플롭에는 클록 신호로서 반전 클록 신호(CLK')가 제공되며, 각각의 상기 D 플립-플롭은 입력 신호(D)가 하이(High)일 경우에는 클록 신호의 하강 엣지에서 동작하고, 입력 신호(D)가 로우(Low)일 경우에는 클록 신호의 상승 엣지에서 동작하는, 주파수 홀수 분주기가 제공된다.
주파수 홀수 분주기, D 플립-플롭, 클록 신호, CML
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