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公开(公告)号：KR1020040081625A
公开(公告)日：2004-09-22
申请号：KR1020030016170
申请日：2003-03-14
Applicant: 한국과학기술연구원
IPC: G11C11/15
CPC classification number: H01F10/1936 , B82Y25/00 , B82Y40/00 , H01F10/193 , H01F41/308 , H01L29/66984
Abstract: PURPOSE: A hybrid magnet/semiconductor spin device and its fabrication method are provided to fabricate a spin injection device and a spin field effect transistor from a spin valve effect obtained by injecting carriers spin-polarized from a ferromagnetic material into a semiconductor. CONSTITUTION: The hybrid magnet/semiconductor spin device includes a semiconductor substrate and a source region(21) of magnetic material formed on the substrate. A spin channel region is formed on the substrate and carriers spin-polarized from the source region are injected into the spin channel region. And a drain region(22) of magnetic material is formed on the substrate and spins passing through the spin channel region are detected in the drain region.
Abstract translation: 目的：提供一种混合磁体/半导体自旋装置及其制造方法，以从通过将从铁磁材料自旋极化的载流子注入半导体而获得的自旋阀效应来制造自旋注入装置和自旋场效应晶体管。 构成：混合磁体/半导体自旋装置包括半导体衬底和形成在衬底上的磁性材料源区（21）。 在衬底上形成自旋沟道区，并将从源极区自旋极化的载流子注入到自旋沟道区。 并且在衬底上形成磁性材料的漏极区域（22），并且在漏极区域中检测到通过自旋沟道区域的自旋。
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公开(公告)号：KR1020030041417A
公开(公告)日：2003-05-27
申请号：KR1020010072201
申请日：2001-11-20
Applicant: 한국과학기술연구원
IPC: G11C11/15
Abstract: PURPOSE: A magnetic memory and word line making method capable of being applied to sensor are provided to realize a pattern with respect to a wordline/bitline to maximize magnetic field required for converting magnetization. CONSTITUTION: An insulation film(102) is formed on a semiconductor substrate(100), and a trench of a predetermined depth is formed by using the insulation film. A seed film(106) is deposited on an entire surface of the trench. A conductive film(108) of a copper material is coated on the seed film so as to cover the trench sufficiently. A CMP process is performed until an upper surface of the insulation film is exposed.
Abstract translation: 目的：提供能够应用于传感器的磁存储器和字线制作方法，以实现相对于字线/位线的图案，以最大化磁化转化所需的磁场。 构成：在半导体衬底（100）上形成绝缘膜（102），通过使用绝缘膜形成预定深度的沟槽。 种子膜（106）沉积在沟槽的整个表面上。 将铜材料的导电膜（108）涂覆在种皮膜上，以充分覆盖沟槽。 进行CMP处理直到绝缘膜的上表面露出。
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公开(公告)号：KR101283934B1
公开(公告)日：2013-07-16
申请号：KR1020110129651
申请日：2011-12-06
Applicant: 한국과학기술연구원
IPC: H01L27/105 , H01L27/115 , H01L29/82
CPC classification number: H01L29/66984 , G11C11/161 , H01L21/823807 , H01L21/823828 , H01L21/8252 , H01L27/0605 , H03K19/18
Abstract: 상보성 논리소자는 기판 상에 형성된 절연층, 절연층 상에 강자성체로 형성된 소스 전극, 소스 전극 상에 강자성체로 형성되어, 소스 전극의 자화 방향을 조절하는 게이트 전극, 소스 전극의 제1 측면과 제2 측면에 각각 형성되어 소스 전극으로부터 스핀 분극된 전자를 전달하는 채널층, 채널층을 사이에 두고 소스 전극의 제1 측면에 강자성체로 형성된 제1 드레인 전극 및 채널층을 사이에 두고 소스 전극의 제2 측면에 강자성체로 형성된 제2 드레인 전극을 포함하고, 제1 드레인 전극의 자화 방향과 제2 드레인 전극의 자화 방향은 반평행하다. 이에 따라, 저전력, 초고속 및 스핀의 비휘발성과 다중스위칭의 특징을 갖는다.
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公开(公告)号：KR101084019B1
公开(公告)日：2011-11-16
申请号：KR1020100044330
申请日：2010-05-12
Applicant: 한국과학기술연구원
IPC: H01L29/82 , H01L29/772 , H01L29/78 , H01L27/105
CPC classification number: H03K19/091 , B82Y10/00 , G11C11/16 , H03K19/18 , H01L29/42312 , H01L29/78618 , H01L29/78624 , H01L29/78696
Abstract: PURPOSE: A complementary spin transfer logic circuit is provided to prevent the oxidation and denaturalization of a channel structure by forming an InAs capping layer on the channel structure. CONSTITUTION: A source(103) is arranged on a semiconductor substrate(101). A spin-polarized electron is injected to a channel structure(200) through the source. The spin-polarized electron is injected to a drain(104) via the channel structure. A gate electrode(106) is arranged on the source, drain, and channel structure. The gate electrode controls the spin of electrons passing through a channel layer included in the channel structure.
Abstract translation: 目的：提供互补的自旋转移逻辑电路，以通过在通道结构上形成InAs覆盖层来防止通道结构的氧化和变性。 构成：源（103）布置在半导体衬底（101）上。 自旋极化电子通过源被注入到通道结构（200）中。 自旋极化电子通过沟道结构注入漏极（104）。 栅极电极（106）布置在源极，漏极和沟道结构上。 栅电极控制通过通道结构中包括的沟道层的电子的自旋。
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Patent Agency Ranking
公开(公告)号：KR1020100037683A
公开(公告)日：2010-04-12
申请号：KR1020080096896
申请日：2008-10-02
Applicant: 한국과학기술연구원
IPC: H01L29/82 , H01L29/772
CPC classification number: H01L29/66984 , H01L29/7785
Abstract: PURPOSE: A spin transistor with a double charge-supply layer structure is provided to improve the vertical symmetry of electron distribution in an energy band structure and a channel by arraigning a double charge-supply layer for binary electron gas structure channel layer. CONSTITUTION: Cladding layers are respectively arranged in the upper side and the lower side of the binary electron gas structure of a channel layer(1). A semiconductor substrate includes a lower cladding layer(3). Ferromagnetic source and drain which are spaced apart from each other are arranged to the longitudinal direction of the channel layer. A gate voltage is applied to a gate electrode to control the spin of the electron which passes through the channel layer. A first charge-supply layer(4) supplies a carrier to the channel layer. A spin transistor is arranged between the upper cladding layer(3') and the channel layer. The spin transistor includes a second charge-supply layer(4').
Abstract translation: 目的：提供具有双电荷供应层结构的自旋晶体管，通过对双电子电子气体结构通道层的双电荷供应层进行调整，提高能带结构和通道中电子分布的垂直对称性。 构成：通道层（1）的二元电子气体结构的上侧和下侧分别设置包覆层。 半导体衬底包括下包层（3）。 彼此间隔开的铁磁源和漏极被布置在沟道层的纵向方向上。 栅极电压施加到栅电极以控制通过沟道层的电子的自旋。 第一电荷供给层（4）向沟道层提供载流子。 自由晶体管布置在上包层（3'）和沟道层之间。 自旋晶体管包括第二电荷供应层（4'）。
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公开(公告)号：KR1020100013930A
公开(公告)日：2010-02-10
申请号：KR1020080075690
申请日：2008-08-01
Applicant: 한국과학기술연구원
IPC: G11C11/15
CPC classification number: H01L43/065 , G11C11/161 , G11C11/1673 , G11C11/18 , H01L27/226 , H01L29/66462 , H01L29/7781
Abstract: PURPOSE: A magnetic memory cell reading method using a spin hall effect and a memory device thereof are provided to easily read the information of a magnetic memory cell by including a magnetic material in the magnetic memory cell and using a spin hole effect. CONSTITUTION: A substrate unit for reading includes a channel layer. A magnetic memory cell(150) is located on the substrate unit. The magnetic memory cell includes a magnetic material. A magnetic material transfers a spin information to an electronics passing through a channel layer(107). Information stored in the magnetic memory cell is found by the voltage between side terminals of the channel layer caused by an electronics movement to the direction of the channel layer width by a spin hall effect.
Abstract translation: 目的：提供使用旋转霍尔效应的磁存储单元读取方法及其存储器件，以通过在磁存储单元中包括磁性材料并使用旋转孔效应来容易地读取磁存储单元的信息。 构成：用于读取的衬底单元包括通道层。 磁性存储单元（150）位于衬底单元上。 磁存储单元包括磁性材料。 磁性材料将自旋信息传送到穿过沟道层（107）的电子器件。 存储在磁存储单元中的信息由通过电子装置引起的沟道层的侧端之间的电压通过纺丝室效应而发生到沟道层宽度的方向上。
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公开(公告)号：KR100938254B1
公开(公告)日：2010-01-22
申请号：KR1020070129952
申请日：2007-12-13
Applicant: 한국과학기술연구원
IPC: H01L27/105 , H01L29/82
CPC classification number: H01L29/205 , B82Y10/00 , H01L29/122 , H01L29/66984 , Y10S977/933
Abstract: 본 발명의 일 측면은, 내부에 채널층이 형성된 반도체 기판부; 상기 반도체 기판부 상에 에피택셜 성장되어 결정 이방성에 의해 상기 채널층의 길이 방향(채널 방향)으로 자화된 강자성체 소스 및 드레인 - 상기 소스 및 드레인은 상기 채널 방향으로 서로 이격되어 배치되고, 상호 동일한 방향으로 자화됨 - ; 및 상기 반도체 기판부와 절연되도록 상기 소스와 드레인 사이에서 상기 반도체 기판부 상에 형성되고 상기 채널층을 통과하는 전자의 스핀을 조절하는 게이트;를 포함하는, 스핀 트랜지스터를 제공한다.
스핀 트랜지스터-
公开(公告)号：KR100861763B1
公开(公告)日：2008-10-08
申请号：KR1020070068684
申请日：2007-07-09
Applicant: 한국과학기술연구원
IPC: H01L21/324 , B82B3/00 , B82B1/00
CPC classification number: H01L21/324 , B82Y40/00 , H01L21/02395 , H01L21/0245 , H01L21/02455 , H01L21/02573 , H01L21/02664
Abstract: A method for forming a metal nano-ring by using a post-thermal process is provided to form a ring-shaped metal drop of a nano size by controlling only temperature in a thermal process. A metal material is implanted into a substrate under pressure 10^-9 torr and less. An annealing process is performed under the post-thermal temperature higher than the temperature of the substrate. The metal material is aluminum, gallium or indium. The post-thermal temperature is 340 to 410 °C when the metal material is the gallium. In the post-thermal process, a post-thermal process time is 10 minutes and more when the metal material is the gallium. The substrate is a gallium arsenide-based substrate when the metal material is the gallium.
Abstract translation: 提供通过使用后热处理形成金属纳米环的方法，通过仅控制热处理中的温度来形成纳米尺寸的环形金属滴。 金属材料在压力为10 ^ -9乇或更低的压力下注入衬底。 在比基板的温度高的后热温度下进行退火处理。 金属材料是铝，镓或铟。 当金属材料是镓时，后热温度为340至410℃。 在后热处理中，当金属材料为镓时，后热处理时间为10分钟以上。 当金属材料是镓时，衬底是基于砷化镓的衬底。
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公开(公告)号：KR100832583B1
公开(公告)日：2008-05-27
申请号：KR1020070000888
申请日：2007-01-04
Applicant: 한국과학기술연구원
IPC: H01L29/78
CPC classification number: H01L29/66984 , G11C11/16 , H01L29/0843 , Y10S257/902 , Y10S977/933
Abstract: A spin transistor using a leakage magnetic field is provided to solve a low injection problem caused by junction part transmission of spin by generating electrons which are sufficiently spin-polarized by the leakage magnetic field and obtaining a resistance difference by selectively accepting the electrons using the filtering effect. A semiconductor substrate(11) comprises a channel layer(12). A first and second electrodes(18,19) are located at the substrate along the longitudinal direction of the channel layer, and separated as a predetermined gap. A source and a drain formed with a magnetized ferroelectric material are located between the first and second electrodes, and separated as the predetermined gap. A gate(15) is formed on the substrate between the source and drain, and controls the spin direction of the electron passing through the channel. The spin of the electron is arranged by the leakage magnetic field of the source at the lower part of the source, and is filtered by the leakage magnetic field of the drain at the lower part of the drain.
Abstract translation: 提供一种使用漏磁场的自旋晶体管，用于解决由于通过产生由泄漏磁场进行充分自旋极化的电子产生的自旋结部分引起的低注入问题，并且通过使用滤波选择性地接受电子而获得电阻差 影响。 半导体衬底（11）包括沟道层（12）。 第一和第二电极（18,19）沿着沟道层的纵向方向位于衬底处，并以预定的间隙分开。 形成有磁化铁电材料的源极和漏极位于第一和第二电极之间，并以预定间隙分离。 在源极和漏极之间的衬底上形成栅极（15），并且控制通过沟道的电子的旋转方向。 电子的旋转由源极的下部的源极的泄漏磁场排列，并且通过漏极下部的漏极的漏磁场进行滤波。
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