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公开(公告)号：KR1020110010539A
公开(公告)日：2011-02-01
申请号：KR1020090125467
申请日：2009-12-16
Applicant: 한국전자통신연구원
IPC: H01L31/0445 , H01L31/0224 , H01L31/0236
CPC classification number: Y02E10/50 , H01L31/0445 , H01L31/0224 , H01L31/0236
Abstract: PURPOSE: A CIGS solar battery and a manufacturing method thereof are provided to maximize energy conversion efficiency by minimizing sunlight which is reflected from the surface of a window electrode layer. CONSTITUTION: A lower electrode layer is formed on a substrate. An optical absorption layer(30) is formed on the lower electrode layer. A buffer layer(40) comprises a plurality of protrusions. A window electrode layer(50) is unevenly bent on the buffer layer along the plurality of protrusions.
Abstract translation: 目的：提供CIGS太阳能电池及其制造方法，以通过使从窗电极层的表面反射的太阳光最小化来最大化能量转换效率。 构成：在基板上形成下电极层。 在下电极层上形成有光吸收层（30）。 缓冲层（40）包括多个突起。 窗口电极层（50）沿着多个突起在缓冲层上不均匀地弯曲。
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公开(公告)号：KR1020090035290A
公开(公告)日：2009-04-09
申请号：KR1020070100496
申请日：2007-10-05
Applicant: 한국전자통신연구원
CPC classification number: H04B10/25759 , H04W88/10
Abstract: A method for separating/converting a multiband signal and an apparatus thereof are provided to expand the service available area regardless of the type of an input/output signal by using the first switch and a photo-electric converter. A photoelectric converter(203) converts an optical signal received from the outside into an electric signal. The first switch(205) separates the converted electric signal according to each frequency band. The first mobile communication band amplifier(207) amplifies a signal of the mobile communication band among signals separated by the first switch. A broadband up-converter(209) up-converts the frequency of a baseband signal among the signals separated by the first switch. The first broadband amplifier(211) amplifies the up-converted signal. A transmitter(215) wirelessly transmits signals amplified by the broadband amplifier and a mobile communication amplifier.
Abstract translation: 提供一种用于分离/转换多频带信号的方法及其装置，用于通过使用第一开关和光电转换器来扩展服务可用区域，而不管输入/输出信号的类型如何。 光电转换器（203）将从外部接收的光信号转换为电信号。 第一开关（205）根据每个频带分离转换后的电信号。 第一移动通信频带放大器（207）放大由第一交换机分离的信号中的移动通信频带的信号。 宽带上变换器（209）对由第一交换机分离的信号中的基带信号的频率进行上变频。 第一宽带放大器（211）放大上变频信号。 发射机（215）无线发射由宽带放大器和移动通信放大器放大的信号。
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公开(公告)号：KR1020080100701A
公开(公告)日：2008-11-19
申请号：KR1020070046710
申请日：2007-05-14
Applicant: 한국전자통신연구원
CPC classification number: H04B10/25752 , H01L2224/45147 , H01L2224/48091 , H01L2924/00014
Abstract: An optical hybrid module is provided to implement an antenna and a filter on a single layer or multi-layer substrate, and supply the bias required for an optical element and amplifier through a solder ball. An optical hybrid module(20) comprises the followings: a silicon optical bench(24) which comprises an optical fiber(23) and an optical element are prepared while being installed on a substrate(21); an amplifier(25) which is installed on the substrate and is connected to the optical element prepared in the silicon optical bench to amplify the signals transmitted from the optical element; and an antenna which is prepared in the substrate so as to be connected with the amplifier and transmits the signals amplified in the amplifier. The optical element is one of an optical receiver, an optical modulator and a laser diode.
Abstract translation: 提供光混合模块以在单层或多层基板上实现天线和滤波器，并通过焊球提供光学元件和放大器所需的偏置。 光学混合模块（20）包括以下步骤：在安装在基板（21）上的同时制备包括光纤（23）和光学元件的硅光学台（24）; 放大器（25），其安装在所述基板上并连接到准备在所述硅光学台中的所述光学元件，以放大从所述光学元件发射的信号; 以及在衬底中准备与放大器连接并发射放大器中放大的信号的天线。 光学元件是光接收器，光调制器和激光二极管之一。
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公开(公告)号：KR100388485B1
公开(公告)日：2003-06-25
申请号：KR1020010030466
申请日：2001-05-31
Applicant: 한국전자통신연구원
IPC: H01S5/30
CPC classification number: H01S5/12 , H01S5/1209 , H01S5/1215 , H01S5/4031 , H01S5/4087
Abstract: A laser resonator is implemented by using the -1-st order reflection peaks of a sampled grating so that the multi-wavelength single mode light source array can be manufactured easily and economically. A multi-wavelength semiconductor laser array comprises a substrate; a plurality of laser stripes arranged with a predetermined space on the substrate, each being divided into two sections; a multiplicity of asymmetric sampled gratings distributed with sampling periods different from each other on the bottom of each active layer; and a number of effective refractive index changing layers, each arranged on one section of each laser stripe to make the Bragg wavelengths different at the two sections.
Abstract translation: 通过使用采样光栅的-1阶反射峰值来实现激光谐振器，使得可以容易且经济地制造多波长单模光源阵列。 多波长半导体激光器阵列包括衬底; 在衬底上以预定间隔排列的多个激光条，每个激光条被分成两部分; 在每个有源层的底部上以彼此不同的采样周期分布的多个非对称采样光栅; 以及多个有效折射率变化层，每个有效折射率变化层布置在每个激光条的一个部分上，以使两个部分处的布拉格波长不同。
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公开(公告)号：KR1020030047047A
公开(公告)日：2003-06-18
申请号：KR1020010077422
申请日：2001-12-07
Applicant: 한국전자통신연구원
IPC: H01S5/026
CPC classification number: H01S5/146 , H01S3/1053 , H01S5/02252 , H01S5/02284
Abstract: PURPOSE: A tunable fiber grating semiconductor laser is provided to control the wavelength of the output light by stretching and contracting of an optical fiber without controlling the temperature. CONSTITUTION: The first region for forming a semiconductor laser diode and the second region for forming an optical fiber(100) are defined on a semiconductor substrate(16). The semiconductor laser diode is formed on the first region of the semiconductor substrate. The optical fiber is formed on the second region of the semiconductor substrate. A grating portion is formed on a predetermined region of the optical fiber. The wavelength of the output light is changed by stretching or contracting the grating portion of the optical fiber. An alignment dam(3) is formed on the first region of the semiconductor substrate in order to align correctly a semiconductor laser diode.
Abstract translation: 目的：提供可调光纤光栅半导体激光器，通过在不控制温度的情况下拉伸和收缩光纤来控制输出光的波长。 构成：形成半导体激光二极管的第一区域和用于形成光纤（100）的第二区域被限定在半导体衬底（16）上。 半导体激光二极管形成在半导体衬底的第一区域上。 光纤形成在半导体衬底的第二区域上。 光纤部分形成在光纤的预定区域上。 通过拉伸或收缩光纤的光栅部分来改变输出光的波长。 在半导体基板的第一区域上形成对准堤（3），以正确对准半导体激光二极管。
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Patent Agency Ranking
公开(公告)号：KR100377193B1
公开(公告)日：2003-03-26
申请号：KR1020000073575
申请日：2000-12-06
Applicant: 한국전자통신연구원
IPC: H01S5/34
Abstract: PURPOSE: A multi-wavelength semiconductor laser array and a method for fabricating the same are provided to broaden a usable wavelength region and reduce an interval between channels by using a phase mask method and a selective region crystalline growth method. CONSTITUTION: A multitude of diffraction grating array(42,43,44,45,46) is formed on an InP semiconductor substrate(41). The diffraction grating array(42,43,44,45,46) have different periods. A dielectric mask pattern is formed on surfaces of both sides of the each diffraction grating of the diffraction grating arrays(42,43,44,45,46). A multi-quantum well structure(48) is formed within a period region of each diffraction grating of the diffraction grating arrays(42,43,44,45,46). The multi-quantum well structure(48) is formed by laminating an InP cladding layer, an InGaAsP optical waveguide layer, an InGaAsP quantum well layer, an InGaAsP optical waveguide layer, and InP cladding layer on the diffraction grating arrays(42,43,44,45,46) between the dielectric mask patterns.
Abstract translation: 目的：提供多波长半导体激光器阵列及其制造方法，以通过使用相位掩模方法和选择区域晶体生长方法来扩大可用波长区域并减小沟道之间的间隔。 构成：在InP半导体衬底（41）上形成多个衍射光栅阵列（42,43,44,45,46）。 衍射光栅阵列（42,43,44,45,46）具有不同的周期。 介电掩模图案形成在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的两侧的表面上。 在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的周期区域内形成多量子阱结构（48）。 多量子阱结构48是在衍射光栅阵列42,43,39上层叠InP包层，InGaAsP光波导层，InGaAsP量子阱层，InGaAsP光波导层，InP包层而形成的。 44,45,46）在介电掩模图案之间。
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公开(公告)号：KR1020020077567A
公开(公告)日：2002-10-12
申请号：KR1020010017315
申请日：2001-04-02
Applicant: 한국전자통신연구원
IPC: H01S5/20
CPC classification number: G02B6/1228 , H01S5/1014 , H01S5/1064
Abstract: PURPOSE: A spot-size-converter integrated semiconductor laser and fabricating the same are provided to be easily manufactured with optimizing the LASER and the SSC region, respectively. CONSTITUTION: The device includes a first waveguide(42), a second waveguide(45) provided with the SSC region in the form of ridge and an active layer in a planar buried shape for coupling an optical mode to the first waveguide(42). The SSC region is formed in such a way that the width of the active layer is gradually reduced until the spot size of one end becomes approximately zero.
Abstract translation: 目的：通过分别优化激光和SSC区域，可以轻松地制造点尺寸转换器集成半导体激光器并制造它们。 构成：该装置包括第一波导（42），第二波导（45），其设置有脊形的SSC区域和平面埋置形状的有源层，用于将光学模式耦合到第一波导（42）。 SSC区域形成为使活性层的宽度逐渐减小，直到一端的光斑尺寸变为近似为零。
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公开(公告)号：KR100345449B1
公开(公告)日：2002-07-26
申请号：KR1020000083171
申请日：2000-12-27
Applicant: 한국전자통신연구원
IPC: H01S5/20
Abstract: 본 발명은 외부의 온도 변화에 영향을 받지 않는 원자선 천이를 반도체 레이저 소자에 적용하여 반도체 레이저 소자의 파장 선택을 안정화 하는데 목적이 있다. 상기 목적 달성을 위하여 본 발명의 반도체 레이저 소자는 요오드, 니오디움, 어븀, 프레시디움 등이 도핑된 폴리머로 이루어진 도파로(5)가 반도체로 이루어진 이득 도파로 영역부(3)와 반도체로 이루어진 파장선택 격자영역부(4) 사이에 브루스터각(6)(7)을 갖도록 접촉된다. 폴리머로 이루어진 도파로(5)와 접촉된 이득 도파로 영역부(3)와 파장선택 격자영역부(4)는 공진기 거울(1)(2) 사이에 설치된다. 이득 도파로 영역부(3)와 상기 파장선택 격자영역부(4)에는 전원 공급용 전극(8)(9)이 각각 접촉된다.
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公开(公告)号：KR1020020044603A
公开(公告)日：2002-06-19
申请号：KR1020000073575
申请日：2000-12-06
Applicant: 한국전자통신연구원
IPC: H01S5/34
Abstract: PURPOSE: A multi-wavelength semiconductor laser array and a method for fabricating the same are provided to broaden a usable wavelength region and reduce an interval between channels by using a phase mask method and a selective region crystalline growth method. CONSTITUTION: A multitude of diffraction grating array(42,43,44,45,46) is formed on an InP semiconductor substrate(41). The diffraction grating array(42,43,44,45,46) have different periods. A dielectric mask pattern is formed on surfaces of both sides of the each diffraction grating of the diffraction grating arrays(42,43,44,45,46). A multi-quantum well structure(48) is formed within a period region of each diffraction grating of the diffraction grating arrays(42,43,44,45,46). The multi-quantum well structure(48) is formed by laminating an InP cladding layer, an InGaAsP optical waveguide layer, an InGaAsP quantum well layer, an InGaAsP optical waveguide layer, and InP cladding layer on the diffraction grating arrays(42,43,44,45,46) between the dielectric mask patterns.
Abstract translation: 目的：提供多波长半导体激光器阵列及其制造方法，以通过使用相位掩模法和选择性区域晶体生长法扩大可用的波长范围并减小通道之间的间隔。 构成：在InP半导体衬底（41）上形成多个衍射光栅阵列（42,43,44,45,46）。 衍射光栅阵列（42,43,44,45,46）具有不同的周期。 在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的两侧的表面上形成介电掩模图案。 在衍射光栅阵列（42,43,44,45,46）的每个衍射光栅的周期区域内形成多量子阱结构（48）。 多量子阱结构（48）通过在衍射光栅阵列（42,43,34）上层叠InP包层，InGaAsP光波导层，InGaAsP量子阱层，InGaAsP光波导层和InP包层而形成， 44,45,46）。
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公开(公告)号：KR100333482B1
公开(公告)日：2002-04-25
申请号：KR1019990039599
申请日：1999-09-15
Applicant: 한국전자통신연구원
IPC: H01L31/10
CPC classification number: B82Y20/00 , G02F1/01708
Abstract: 본발명은소자의정전용량과접촉저항이동시에감소하는초고속반도체광변조기에관한것이다. 이러한초고속반도체광변조기는, 기판위에 n형광도파로층과, 광흡수층, p형광도파로층, p형클래드층, 및 p형옴접촉층이순차적으로적층되는리지(ridge) 구조의전계흡수형광변조기에있어서, 상기광흡수층의폭(W3)은상기옴접촉층의폭(W1)보다작게형성된다. 본발명에의하면, 광변조기의특성저하요소인접촉저항과정전용량을동시에저감시킬수 있기때문에변조특성이우수한수십기가급의초고속광변조가가능해진다.
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