公开(公告)号：US20170200764A1

公开(公告)日：2017-07-13

申请号：US15472882

申请日：2017-03-29

Applicant: Epistar Corporation

Inventor： Chiu-Lin YAO ,  Chih-Chiang LU

IPC: H01L27/15 ,  H01L33/62 ,  H01L33/44 ,  H01L33/38 ,  H01L33/32 ,  H01L33/42 ,  H01L33/46 ,  H01L33/24 ,  H01L33/22 ,  H01L33/00 ,  H01L29/861 ,  H01L29/20 ,  H01L29/22 ,  H01L29/66 ,  H01L33/64

CPC classification number: H01L27/15 ,  H01L25/075 ,  H01L25/0753 ,  H01L29/2003 ,  H01L29/22 ,  H01L29/6609 ,  H01L29/66969 ,  H01L29/861 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/385 ,  H01L33/42 ,  H01L33/44 ,  H01L33/46 ,  H01L33/62 ,  H01L33/64 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0066 ,  H01L2933/0075 ,  H01L2924/00

Abstract: The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the first connecting layer; a light-emitting structure on the diode stack structure, wherein the light-emitting structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a first electrode electrically connected to the diode stack structure and the light-emitting structure.

公开(公告)号：US20170077371A1

公开(公告)日：2017-03-16

申请号：US15360177

申请日：2016-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Wei-Chih PENG ,  Shiau-Huei SAN ,  Min-Hsun HSIEH

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/60 ,  H01L33/22 ,  H01L33/32 ,  H01L33/28 ,  H01L33/06 ,  H01L33/00 ,  H01L33/56 ,  H01L33/30

CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/504 ,  H01L33/508 ,  H01L33/56 ,  H01L33/60

Abstract: An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.

Abstract translation: 一种光电子半导体器件，包括：半导体系统，包括上表面，界面层包括在所述半导体系统的上表面上的上界面层，所述上界面层包括第一波长转换材料; 和上界面层中的空隙区域，并且与上界面层的材料不同的材料填充在空隙区域中。

公开(公告)号：US20160211412A1

公开(公告)日：2016-07-21

申请号：US14996744

申请日：2016-01-15

Applicant: EPISTAR CORPORATION

Inventor： Hsin-Chih CHIU ,  Shih-I CHEN ,  Chih-Chiang LU

IPC: H01L33/22 ,  H01L33/30 ,  H01L33/42 ,  H01L33/38 ,  H01L33/40

CPC classification number: H01L33/22 ,  H01L33/145 ,  H01L33/20 ,  H01L33/30 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/505

Abstract: A semiconductor light-emitting device comprises an epitaxial structure comprising a first semiconductor stack, a second semiconductor stack, and an active layer between the first semiconductor stack and second semiconductor stack for emitting a light; and a main light-extraction surface on the first semiconductor stack, wherein the light passes through the main light-extraction surface. The main light-extraction surface comprises a first light-extraction region, a second light-extraction region, and a maximum near-field luminous intensity. The distribution of the near-field luminous intensity in the first light-extraction region is between 70% and 100% of the maximum near-field luminous intensity, the distribution of the near-field luminous intensity in the second light-extraction region is between 0% and 70% of the maximum near-field luminous intensity. A ratio of an area of the first light-extraction region to an area of the second light-extraction region is between 0.25 and 0.45.

Abstract translation: 半导体发光器件包括外延结构，该外延结构包括第一半导体叠层，第二半导体叠层以及用于发射光的第一半导体叠层和第二半导体叠层之间的有源层; 以及在第一半导体堆叠上的主光提取表面，其中光穿过主光提取表面。 主光提取表面包括第一光提取区域，第二光提取区域和最大近场发光强度。 第一光提取区域中的近场发光强度的分布在最大近场发光强度的70％至100％之间，第二光提取区域中的近场发光强度的分布在 0％和70％的最大近场发光强度。 第一光提取区域的面积与第二光提取区域的面积的比率在0.25和0.45之间。

公开(公告)号：US20160149072A1

公开(公告)日：2016-05-26

申请号：US14550016

申请日：2014-11-21

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Yi-Chieh LIN ,  Wen-Luh LIAO ,  Shou-Lung CHEN ,  Chien-Fu HUANG

IPC: H01L33/00 ,  H01L33/08 ,  H01L33/10

CPC classification number: H01L33/08 ,  H01L27/15 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/10 ,  H01L33/50 ,  H01L33/56 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2924/00014

Abstract: A method for making a light-emitting device comprises the steps of: providing a growth substrate; forming a first light-emitting semiconductor stack on the growth substrate by epitaxial growth, and the first light-emitting semiconductor stack comprises a first active layer; forming a Distributed Bragg reflector on the first light-emitting semiconductor stack by epitaxial growth; forming a second light-emitting semiconductor stack on the Distributed Bragg reflector by epitaxial growth, and the second light-emitting semiconductor stack comprises a second active layer; and wherein the first active layer emits a first radiation of a first dominant wavelength, and the second active layer emits a second radiation of a second dominant wavelength longer than the first dominant wavelength.

Abstract translation: 制造发光器件的方法包括以下步骤：提供生长衬底; 通过外延生长在生长衬底上形成第一发光半导体堆叠，并且第一发光半导体堆叠包括第一有源层; 通过外延生长在第一发光半导体堆叠上形成分布布拉格反射器; 通过外延生长在所述分布式布拉格反射器上形成第二发光半导体堆叠，并且所述第二发光半导体堆叠包括第二有源层; 并且其中所述第一有源层发射第一主波长的第一辐射，并且所述第二有源层发射比所述第一主波长长的第二主波长的第二辐射。

公开(公告)号：US20150144975A1

公开(公告)日：2015-05-28

申请号：US14088705

申请日：2013-11-25

Applicant: EPISTAR CORPORATION

Inventor： Fu-Chun TSAI ,  Wen-Luh LIAO ,  Yao-Ru CHANG ,  Shih-I CHEN ,  Chih-Chiang LU

IPC: H01L33/30

CPC classification number: H01L33/30 ,  H01L33/0079 ,  H01L33/16

Abstract: A light-emitting device comprises a substrate; and a semiconductor stack comprising a III-V group material formed on the substrate, wherein the substrate comprises a first amorphous portion adjacent to the semiconductor stack, and a portion having a material different from that of the first amorphous portion and away from the semiconductor stack, wherein the first amorphous portion has a first refractive index, the portion has a second refractive index, and the first refractive index is higher than the second refractive index and lower than a refractive index of the semiconductor stack.

Abstract translation: 发光装置包括基板; 以及包括形成在所述基板上的III-V族材料的半导体堆叠，其中所述基板包括与所述半导体叠层相邻的第一非晶体部分和具有与所述第一非晶部分的材料不同的材料并远离所述半导体叠层的部分 其中，所述第一非晶部分具有第一折射率，所述部分具有第二折射率，并且所述第一折射率高于所述第二折射率且低于所述半导体叠层的折射率。

公开(公告)号：US20150123151A1

公开(公告)日：2015-05-07

申请号：US14594761

申请日：2015-01-12

Applicant: Epistar Corporation

Inventor： Min-Hsun HSIEH ,  Kuen-Ru CHUANG ,  Shu-Wen SUNG ,  Chia-Cheng LIU ,  Chao-Nien HUANG ,  Shane-Shyan WEY ,  Chih-Chiang LU ,  Ming-Jiunn JOU

IPC: H01L33/16 ,  H01L33/42

CPC classification number: H01L33/16 ,  H01L21/2007 ,  H01L33/0079 ,  H01L33/02 ,  H01L33/30 ,  H01L33/32 ,  H01L33/42

Abstract: A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.

Abstract translation: 发光结构包括透明基板; 形成在所述透明基板上并且具有与所述第一顶表面基本上共面的第一顶表面和第二顶表面的第一透明导电层; 形成在所述第一顶表面上的第一发光叠层; 以及直接形成在第二顶面上的第一电极。

公开(公告)号：US20150108494A1

公开(公告)日：2015-04-23

申请号：US14520067

申请日：2014-10-21

Applicant: EPISTAR CORPORATION

Inventor： Wen-Luh LIAO ,  Chih-Chiang LU ,  Shih-Chang LEE ,  Hung-Ta CHENG ,  Hsin-Chan CHUNG ,  Yi-Chieh LIN

IPC: H01L33/00 ,  H01L33/42 ,  H01L33/30

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/0079 ,  H01L2933/0091

Abstract: The present disclosure provides a light-emitting device and manufacturing method thereof. The light-emitting device comprising: a light-emitting stack; and a semiconductor layer having a first surface connecting to the light-emitting stack, a second surface opposite to the first surface, and a void; wherein the void comprises a bottom part near the first surface and an opening on the second surface, and a dimension of the bottom part is larger than the dimension of the opening.

Abstract translation: 本发明提供一种发光装置及其制造方法。 该发光装置包括：发光叠层; 以及半导体层，其具有连接到所述发光叠层的第一表面，与所述第一表面相对的第二表面和空隙; 其中所述空隙包括靠近所述第一表面的底部部分和所述第二表面上的开口，并且所述底部部分的尺寸大于所述开口的尺寸。

公开(公告)号：US20140319558A1

公开(公告)日：2014-10-30

申请号：US14261368

申请日：2014-04-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Ming CHEN ,  Hao-Min KU ,  Chih-Chiang LU ,  Tzu-Chieh HSU

IPC: H01L33/10 ,  H01L33/26

CPC classification number: H01L33/10 ,  H01L33/38 ,  H01L33/405

Abstract: This disclosure discloses a light-emitting device. The light-emitting device comprise a light-emitting stack having a first-type semiconductor layer, a second-type semiconductor layer, and an active formed between the first-type semiconductor layer and the second-type semiconductor layer and emitting a light; and a reflective structure formed on the first-type semiconductor layer and having a first interface and a second interface; wherein the critical angle of the light at the first interface is larger than that at the second interface; and wherein the reflective structure ohmically contacts the first-type semiconductor layer at the first interface.

Abstract translation: 本公开公开了一种发光装置。 发光装置包括具有第一类型半导体层，第二类型半导体层和形成在第一类型半导体层和第二类型半导体层之间并发射光的活性物质的发光堆叠; 以及形成在所述第一类型半导体层上并具有第一接口和第二接口的反射结构; 其中所述第一界面处的光的临界角大于所述第二界面处的所述临界角; 并且其中所述反射结构在所述第一界面处欧姆接触所述第一类型半导体层。

公开(公告)号：US20140096901A1

公开(公告)日：2014-04-10

申请号：US14100999

申请日：2013-12-09

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Chih-Chiang LU ,  Ching-Pu TAI

IPC: H01L33/00

CPC classification number: H01L33/005 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/42 ,  H05B33/26 ,  Y10T29/49995 ,  Y10T156/1062

Abstract: A light-emitting device includes a transparent substrate, a transparent adhesive layer on the transparent substrate, a first transparent conductive layer on the transparent adhesive layer, a multi-layer epitaxial structure and a first electrode on the transparent conductive layer, and a second electrode on the multi-layer epitaxial structure. The multi-layer epitaxial structure includes a light-emitting layer. The transparent substrate has a first surface facing the transparent adhesive layer and a second surface opposite to the first surface, wherein the area of the second surface is larger than that of the light-emitting layer, and the area ratio thereof is not less than 1.6.

Abstract translation: 发光装置包括透明基板，透明基板上的透明粘合剂层，透明粘合剂层上的第一透明导电层，透明导电层上的多层外延结构和第一电极，以及第二电极 在多层外延结构上。 多层外延结构包括发光层。 透明基板具有与透明粘合剂层相对的第一表面和与第一表面相对的第二表面，其中第二表面的面积大于发光层的面积，面积比不小于1.6 。