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    Light-emitting device
    42.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US10156335B1

    公开(公告)日：2018-12-18

    申请号：US15666110

    申请日：2017-08-01

    Applicant: EPISTAR CORPORATION

    Inventor： Jun-Yi Li ,  Chun-Yu Lin ,  Shih-Chang Lee ,  Yi-Ming Chen

    IPC: H01L33/60 ,  F21S43/14 ,  H01L33/00 ,  G08G1/095 ,  H01L33/42

    Abstract: A light-emitting device comprises a semiconductor structure comprising a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, a first intermediate layer, a second intermediate layer, and an active region capable of emitting radiation, wherein the active region is between the first intermediate layer and the second intermediate layer, the first intermediate layer is in direct contact with the first conductivity-type semiconductor layer, the second intermediate layer is in direct contact with the second conductivity-type semiconductor layer, and the active region comprises alternated well layers and barrier layers, wherein each barrier layer has a thickness; wherein a first difference between a refractive index of the first intermediate layer and a refractive index of the first conductivity-type semiconductor layer is less than a second difference between a refractive index of the second intermediate layer and a refractive index of the second conductivity-type semiconductor layer.

    Light-emitting device
    44.
    发明授权
    Light-emitting device 有权

    公开(公告)号：US09887322B2

    公开(公告)日：2018-02-06

    申请号：US15342701

    申请日：2016-11-03

    Applicant: EPISTAR CORPORATION

    Inventor： Ching-Huai Ni ,  Chia-Liang Hsu ,  Yi-Ming Chen

    IPC: H01L31/12 ,  H01L27/32 ,  H01L33/38 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32

    CPC classification number: H01L33/382 ,  H01L33/22 ,  H01L33/24 ,  H01L33/30 ,  H01L33/32 ,  H01L2933/0016

    Abstract: A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a second type semiconductor layer and an active layer formed between the first type semiconductor layer and the second type semiconductor layer, wherein the first type semiconductor layer comprises a non-planar roughened surface; a bonding layer formed between the substrate and the semiconductor stack; and multiple recesses each comprising a bottom surface lower than the non-planar roughened surface; and multiple buried electrodes physically buried in the first type semiconductor layer, wherein the multiple buried electrodes are formed in the multiple recesses respectively, and one of the multiple buried electrodes comprises an upper surface; wherein an upper surface of the buried electrode and the non-planar roughened surface of the first type semiconductor layer are substantially on the same plane.

    Optoelectronic device and the manufacturing method thereof
    49.
    发明授权
    Optoelectronic device and the manufacturing method thereof 有权
    光电子器件及其制造方法

    公开(公告)号：US09136436B2

    公开(公告)日：2015-09-15

    申请号：US14489169

    申请日：2014-09-17

    Applicant: EPISTAR CORPORATION

    Inventor： Kun-De Lin ,  Yao-Ning Chan ,  Yi-Ming Chen ,  Tzu-Chieh Hsu

    IPC: H01L33/00 ,  H01L33/38 ,  H01L33/42 ,  H01L33/40 ,  H01L33/22 ,  H01L33/44

    CPC classification number: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44

    Abstract: An optoelectronic device comprises a semiconductor stack having a first surface, a contact layer having a first pattern on the first surface for ohmically contacting the semiconductor stack, a void in the semiconductor stack and surrounding the contact layer, and a mirror structure on the first surface and covering the contact layer, wherein the first surface has a first portion which is not covered by the contact layer and a second portion covered by the contact layer, and the first portion is rougher than the second portion.

    Abstract translation: 光电子器件包括具有第一表面的半导体堆叠，在第一表面上具有欧姆接触半导体叠层的第一图案的接触层，半导体叠层中的空隙和围绕接触层的第一表面的反射镜结构 并且覆盖所述接触层，其中所述第一表面具有未被所述接触层覆盖的第一部分和被所述接触层覆盖的第二部分，并且所述第一部分比所述第二部分更粗糙。

    Light-emitting device
    50.
    发明授权
    Light-emitting device 有权
    发光装置

    公开(公告)号：US09087967B2

    公开(公告)日：2015-07-21

    申请号：US13856220

    申请日：2013-04-03

    Applicant: EPISTAR CORPORATION

    Inventor： Shih-I Chen ,  Tsung-Xian Lee ,  Yi-Ming Chen ,  Wei-Yu Chen ,  Ching-Pei Lin ,  Min-Hsun Hsieh ,  Cheng-Nan Han ,  Tien-Yang Wang ,  Hsing-Chao Chen ,  Hsin-Mao Liu ,  Zong-Xi Chen ,  Tzu-Chieh Hsu ,  Chien-Fu Huang ,  Yu-Ren Peng

    IPC: H01L33/00 ,  H01L33/50 ,  H01L33/44 ,  H01L25/075

    CPC classification number: H01L33/502 ,  H01L25/0753 ,  H01L33/44 ,  H01L33/505 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A light-emitting device of an embodiment of the present application comprises a substrate; a first semiconductor light-emitting structure formed on the substrate, wherein the first semiconductor light-emitting structure comprises a first semiconductor layer having a first conductivity type, a second semiconductor layer having a second conductivity type and a first active layer formed between the first semiconductor layer and the second semiconductor layer, wherein the first active layer is capable of emitting a first light having a first dominant wavelength; and a first thermal-sensitive layer formed on a path of the first light, wherein the first thermal-sensitive layer comprises a material characteristic which varies with a temperature change.

    Abstract translation: 本申请的实施方式的发光装置包括：基板; 形成在所述基板上的第一半导体发光结构，其中所述第一半导体发光结构包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在所述第一半导体层之间的第一有源层 层和第二半导体层，其中第一有源层能够发射具有第一主波长的第一光; 以及形成在所述第一光的路径上的第一热敏层，其中所述第一热敏层包括随温度变化而变化的材料特性。

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