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    SYSTEM-ON-CHIP (EIN-CHIP-SYSTEM) MIT STROMVERWALTUNGSSCHALTREIS UND MIT HOCHFREQUENZSCHALTKREIS, DIE EINEN GRUPPE-III-N-TRANSISTOR AUFWEISEN
    42.
    发明专利
    SYSTEM-ON-CHIP (EIN-CHIP-SYSTEM) MIT STROMVERWALTUNGSSCHALTREIS UND MIT HOCHFREQUENZSCHALTKREIS, DIE EINEN GRUPPE-III-N-TRANSISTOR AUFWEISEN 未知

    公开(公告)号：DE112011105978B4

    公开(公告)日：2021-02-04

    申请号：DE112011105978

    申请日：2011-12-19

    Applicant: INTEL CORP

    Inventor： THEN HAN WUI ,  CHAU ROBERT ,  RAO VALLURI ,  RADSOSAVLJEVIC MARKO ,  PILLARISETTY RAVI ,  DEWEY GILBERT ,  KAVALIEROS JACK

    IPC: H01L27/085 ,  G06F1/00 ,  H01L21/8234 ,  H01L21/8252 ,  H01L29/778

    Abstract: SoC (Ein-Chip-System, System on Chip, 710), aufweisend:einen integrierten Stromverwaltungsschaltkreis PMIC (715), der mindestens einen von einem Schaltspannungsregler oder einem Schalt-Gleichspannungswandler aufweist; undeinen integrierten Hochfrequenzschaltkreis RFIC (725), der einen Leistungsverstärker aufweist, der zum Erzeugen einer Trägerwellenfrequenz von mindestens 2 GHz betrieben werden kann, wobei sowohl der PMIC als auch der RFIC auf demselben Substrat (500) monolithisch integriert sind und wobei mindestens eines von PMIC und RFIC mindestens einen Gruppe III-Nitrid-HEMT (High-Electron-Mobility-Transistor, Transistor mit hoher Elektronenbeweglichkeit) aufweist, wobei ferner der Gruppe III-Nitrid-HEMT eine obere Sperrschicht (109) mit einer ersten Dicke (die auch 0 nm sein kann) zwischen einer Gate-Elektrode (120) und einer Kanalschicht (107) und einer zweiten, größeren Dicke zwischen einem Source-Kontakt (135) und der Kanalschicht und zwischen einem Drain-Kontakt (145) und der Kanalschicht, um ein zweidimensionales Elektronengas innerhalb der Kanalschicht nur zu bilden, wenn die Gate-Elektrode eine Schwellenspannung von mehr als 0 V aufweist, wobei der Source-Kontakt und der Drain-Kontakt auf einer jeweiligen Seite der Gate-Elektrode angeordnet sind, und mit einer dritten Dicke zwischen der ersten und der zweiten Dicke in einem Spacer-Bereich zwischen der Gate-Elektrode und jeweils dem Source- und Drain-Kontakt aufweist.

    43.
    发明专利
    未知

    公开(公告)号：DE602005012385D1

    公开(公告)日：2009-03-05

    申请号：DE602005012385

    申请日：2005-04-13

    Applicant: INTEL CORP

    Inventor： MA QING ,  WANG LI-PENG ,  SHIM DONG ,  RAO VALLURI

    IPC: H03H3/04 ,  H01L41/08 ,  H03H9/205

    Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

    44.
    发明专利
    未知

    公开(公告)号：AT421191T

    公开(公告)日：2009-01-15

    申请号：AT05737419

    申请日：2005-04-13

    Applicant: INTEL CORP

    Inventor： MA QING ,  WANG LI-PENG ,  SHIM DONG ,  RAO VALLURI

    IPC: H03H3/04 ,  H01L41/08 ,  H03H9/205

    Abstract: Plural band film bulk acoustic resonators may be formed on the same integrated circuit using lithographic techniques. As a result, high volume production of reproducible components can be achieved, wherein the resonators, as manufactured, are designed to have different frequencies.

    45.
    发明专利
    未知

    公开(公告)号：AT386822T

    公开(公告)日：2008-03-15

    申请号：AT02799571

    申请日：2002-09-05

    Applicant: INTEL CORP

    Inventor： RAO VALLURI ,  NEUBAUER GABI ,  KIRCH STEVEN ,  YAMAKAWA MINEO ,  BERLIN ANDREW

    IPC: C12Q1/68 ,  B01L3/00 ,  C07H21/02 ,  C07H21/04 ,  C12M1/00 ,  C12M1/34 ,  C12N15/00 ,  C12N15/09 ,  C12P19/34 ,  G01J3/42 ,  G01J3/427 ,  G01J3/44 ,  G01N21/65 ,  G01N33/53 ,  G01N33/566

    Abstract: The methods, compositions and apparatus disclosed herein are of use for nucleic acid sequence determination. The methods involve isolation of one or more nucleic acid template molecules and polymerization of a nascent complementary strand of nucleic acid, using a DNA or RNA polymerase or similar synthetic reagent. As the nascent strand is extended one nucleotide at a time, the disappearance of nucleotide precursors from solution is monitored by Raman spectroscopy or FRET. The nucleic acid sequence of the nascent strand, and the complementary sequence of the template strand, may be determined by tracking the order of incorporation of nucleotide precursors during the polymerization reaction. Certain embodiments concern apparatus comprising a reaction chamber and detection unit, of use in practicing the claimed methods. The methods, compositions and apparatus are of use in sequencing very long nucleic acid templates in a single sequencing reaction.

    46.
    发明专利
    未知

    公开(公告)号：AT382205T

    公开(公告)日：2008-01-15

    申请号：AT03016929

    申请日：2003-07-24

    Applicant: INTEL CORP

    Inventor： WANG LI-PENG ,  BAR-SADEH EYAL ,  RAO VALLURI ,  HECK JOHN ,  MA QING ,  TRAN QUAN ,  TALALYEVSKY ALEXANDER ,  GINSBURG EYAL

    IPC: H03H3/02 ,  H03H9/24 ,  H03H9/205 ,  H03H9/54 ,  H03H9/56

    Abstract: A film bulk acoustic resonator filter (10) may be formed with a plurality of interconnected series and shunt film bulk acoustic resonators (38) formed on the same membrane (35). Each of the film bulk acoustic resonators (38) may be formed from a common lower conductive layer which is defined to form the bottom electrode (32) of each film bulk acoustic resonator (38). A common top conductive layer may be defined to form each top electrode (36) of each film bulk acoustic resonator (38). A common piezoelectric film layer (34), that may or may not be patterned, forms a continuous or discontinuous film.

    PACKAGING MICROELECTROMECHANICAL STRUCTURES
    47.
    发明专利
    PACKAGING MICROELECTROMECHANICAL STRUCTURES 未知

    公开(公告)号：MY134774A

    公开(公告)日：2007-12-31

    申请号：MYPI20031060

    申请日：2003-03-25

    Applicant: INTEL CORP

    Inventor： MA QING ,  RAO VALLURI ,  WANG LI-PENG ,  HECK JOHN ,  TRAN QUAN

    IPC: H01L21/30 ,  B81B7/00

    Abstract: A MICROELECTROMECHANICAL SYSTEM (32) MEY BE ENCLOSED IN A HERMETIC CAVITY (44) DEFINED BY JOINED, FIRST AND SECOND SEMICONDUCTOR STRUCTURES (14, 12). THE JOINED STRUCTURES (14, 12) MAY BE SEALED BY A SOLDER SEALING RING (18), WHICH EXTENDS COMPLETELY AROUNS THE CAVITY (44). ONE OF THE SEMICONDUCTOR STRUCTURES (14, 12) MAY HAVE THE SYSTEM (32) FORMED THEREON AND AN OPEN AREA (38) MAY BE FORMED UNDERNEATH SAID SYSTEM (32). THAT OPEN AREA (38) MAY BE FORMED FROM THE UNDERSIDE OF THE STRUCTURE (14, 12) AND MAY BE CLOSED BY COVERING WITH A SUITABLE FILM A SUITABLE FILM (20) IN ONE EMBODIMENT.(FIG 1)

    Laser exposure of photosensitive masks for dna microarray fabrication
    49.
    发明专利
    Laser exposure of photosensitive masks for dna microarray fabrication 未知

    公开(公告)号：AU2003303106A8

    公开(公告)日：2004-08-13

    申请号：AU2003303106

    申请日：2003-11-26

    Applicant: INTEL CORP

    Inventor： YAMAKAWA MINEO ,  BERLIN ANDREW ,  RAO VALLURI

    IPC: B01J19/00 ,  B05D3/00 ,  C12M1/34 ,  C12Q1/68 ,  G03F1/00 ,  G03F7/20

    Abstract: A method and apparatus for forming a polymer array on a substrate suitable for synthesizing polymer sequences. This includes forming an array, each location of the array having at least one strand end, forming photosensitive protection on the strand ends, and selectively scanning and modulating at least one energy beam to expose a pattern on the photosensitive protection. In some embodiments, the method further includes removing a protective group from selected strand ends based on the exposed pattern. The method then includes adding a predetermined one or more polymeric subunits to the deprotected strand ends. In some embodiments the photosensitive protection includes a layer of photoresist to cover the strand ends. Some embodiments use an ultra-violet laser.

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