公开(公告)号：EP0923126A1

公开(公告)日：1999-06-16

申请号：EP97830654.6

申请日：1997-12-05

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ravanelli, Enrico Maria Alfonso

IPC: H01L23/00 ,  H01L23/58 ,  H01L23/485

CPC classification number: H01L23/585 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated electronic device (1) comprises a protection structure (31) of metal, extending vertically and laterally to and along a predominant part of the periphery of an electronic component (3) integrated underneath the pad region (28). The protection structure (31) comprises a substantially annular region (21; 21b; 21c) formed from the second metal layer (20) and absorbing the stresses exerted on the pad during wire bonding. The annular region may be floating or form part of the path connecting the pad to the electronic component (3).

Abstract translation: 集成电子设备（1）包括金属保护结构（31），该金属保护结构（31）在集成在焊盘区域（28）下方的电子部件（3）的主要部分的垂直和横向延伸并且沿其主要部分延伸。 保护结构（31）包括由第二金属层（20）形成的基本上环形的区域（21; 21b; 21c），并且在引线接合期间吸收施加在焊盘上的应力。 环形区域可以是浮动的或形成将焊盘连接到电子部件（3）的路径的一部分。

公开(公告)号：EP0915513A1

公开(公告)日：1999-05-12

申请号：EP97830536.5

申请日：1997-10-23

Applicant: STMicroelectronics S.r.l.

Inventor： Ferrari, Paolo ,  Manfredi, Armando ,  Vigna, Benedetto

IPC: H01L23/64 ,  H01L21/3205 ,  H01L27/06 ,  H01L23/522

CPC classification number: H01L28/10 ,  H01L23/5227 ,  H01L23/645 ,  H01L27/0688 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The integrated inductor (40) comprises a coil (21b) of metal which is formed in the second metal level (21). The coil is supported by a bracket (20a) extending above spaced from a semiconductor material body (3) by an air gap (28) obtained by removing a sacrificial region formed in the first metal level (16). The bracket (20a) is carried by the semiconductor material body (3) through support regions (20b) which are arranged peripherally on the bracket (20a) and are separated from one another by through apertures (36) which are connected to the air gap (28). A thick oxide region (4) extends above the semiconductor material body (3), below the air gap (28), to reduce the capacitive coupling between the inductor and the semiconductor material body (3). The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract translation: 集成电感器（40）包括形成在第二金属层（21）中的金属线圈（21b）。 线圈由通过去除形成在第一金属层（16）中的牺牲区域而获得的气隙（28）的与半导体材料体（3）间隔开的托架（20a）支撑。 托架（20a）由半导体材料体（3）通过支撑区域（20b）承载，支撑区域（20b）周向地布置在托架（20a）上并且通过孔（36）彼此分离，孔（36）连接到气隙 （28）。 厚氧化物区域（4）在半导体材料体（3）的上方延伸到气隙（28）的下方，以减小电感器和半导体材料体（3）之间的电容耦合。 因此，电感器具有高品质因数，并且通过与当前微电子工艺兼容的工艺产生。

公开(公告)号：EP0895276A1

公开(公告)日：1999-02-03

申请号：EP97830406.1

申请日：1997-07-31

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Ferrari, Paolo ,  Vigna, Benedetto

IPC: H01L21/00 ,  H01L21/762 ,  G01L9/00 ,  F16C11/06

CPC classification number: B81C1/00246 ,  B81B2203/033 ,  B81C2201/0109 ,  B81C2201/0114 ,  B81C2201/0115 ,  B81C2203/0742 ,  G01P15/0802 ,  G01P15/097 ,  H01L21/764

Abstract: The process comprises forming a buried sacrificial layer (5) of porous silicon in the starting substrate (2) and then a single-crystal epitaxial layer (7) intended to accommodate both the sensitive element and the integrated circuit. After forming electronic components (12, 18) in the epitaxial layer, the epitaxial layer (7) is anisotropically etched over the buried sacrificial layer (5) to form trenches (27) through which the buried sacrificial layer is then etched and removed. The suspended mass (30) thus obtained has high mechanical properties, high thickness, the process is wholly compatible with standard microelectronics techniques and can be implemented at low cost.

Abstract translation: 该工艺包括在起始衬底（2）中形成多孔硅的掩埋牺牲层（5），然后形成旨在兼容敏感元件和集成电路的单晶外延层（7）。 在外延层中形成电子部件（12,18）之后，在掩埋牺牲层（5）上各向异性地蚀刻外延层（7）以形成沟槽（27），然后通过该沟槽蚀刻和去除掩埋牺牲层。 这样获得的悬浮物（30）具有高机械性能，高厚度，该工艺与标准微电子技术完全兼容，并且可以以低成本实现。

公开(公告)号：EP0886264A1

公开(公告)日：1998-12-23

申请号：EP97830291.7

申请日：1997-06-19

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G11B5/55 ,  G11B20/10

CPC classification number: G11B21/12 ,  G11B5/5552 ,  G11B5/5582 ,  G11B21/24

Abstract: A suspension arm (125) for a head (120) of a disk storage device comprises at least one wall (225, 230) substantially perpendicular to the disk (105) and having a portion (238, 239) which is deformable parallel to a plane extending through a longitudinal axis (235) of the suspension arm (125) and perpendicular to the at least one wall (225, 230), and piezoelectric means (240, 255) which can deform the portion (238, 239) in order correspondingly to move the head (120), the piezoelectric means (240-255) being fixed to the deformable portion (238, 239) of the at least one wall (225, 230).

Abstract translation: 用于磁盘存储装置的磁头（120）的悬架臂（125）包括基本上垂直于磁盘（105）的至少一个壁（225,230），并且具有可平行于磁盘的可变形的部分（238,239） 延伸穿过悬挂臂（125）的纵向轴线（235）并垂直于至少一个壁（225,230）的平面以及能够按顺序使部分（238,239）变形的压电装置（240,255） 相应地移动头部（120），压电装置（240-255）固定在至少一个壁（225,230）的可变形部分（238,239）上。

公开(公告)号：EP0886144A1

公开(公告)日：1998-12-23

申请号：EP97830290.9

申请日：1997-06-19

Applicant: STMicroelectronics S.r.l.

Inventor： Murari, Bruno ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G01P15/08 ,  G01P1/02

CPC classification number: B81C1/0023 ,  G01P1/02 ,  G01P15/0802

Abstract: A sensor (100) with a movable microstructure comprises a sensitive element (105), formed in a first chip (110) of semiconductor material, for producing an electrical signal dependent on a movement of at least one movable microstructure relative to a surface of the first chip (110), the sensitive element (105) being enclosed in a hollow hermetic structure (115), and a circuitry (130) for processing said electrical signal, formed in a second chip (125) of semiconductor material, the hollow hermetic structure (115) including a metal wall (120) disposed on the surface of the first chip (110) around the sensitive element (105), and the second chip (125) being fixed to said wall (120).

Abstract translation: 具有可移动微结构的传感器（100）包括形成在半导体材料的第一芯片（110）中的敏感元件（105），用于产生取决于至少一个可移动微结构相对于表面的运动的电信号 第一芯片（110），敏感元件（105）封闭在中空密封结构（115）中，以及用于处理形成在半导体材料的第二芯片（125）中的所述电信号的电路（130），所述中空密封 结构（115）包括设置在所述第一芯片（110）的表面周围所述敏感元件（105）的金属壁（120），以及所述第二芯片（125）固定到所述壁（120）。

公开(公告)号：EP0881468A1

公开(公告)日：1998-12-02

申请号：EP98109368.5

申请日：1998-05-22

Applicant: STMicroelectronics S.r.l.

Inventor： Sax, Herbert ,  Murari, Bruno ,  Villa, Flavio ,  Vigna, Benedetto ,  Ferrari, Paolo

IPC: G01D5/14 ,  G01V3/08

CPC classification number: G01V3/081 ,  G01D5/145

Abstract: The bi-dimensional position sensor (1) can be advantageously used in the turn system controlled from the steering wheel of a vehicle and comprises a permanent magnet (3) fixed to a control lever (4) so as to move in a plane along a first (X) and a second (Y) direction and rotate about a third direction (W) orthogonal to the preceding ones. The permanent magnet is movable with respect to an integrated device comprising a first group of sensor elements (10 1 -10 3 ) arranged spaced along the first direction, a second group of sensor elements (10 4 -10 7 ) arranged spaced along the second direction and a third group of sensor elements (10 8 -10 9 ) detecting the angular position of the permanent magnet. Electronics integrated with the sensor elements generate a code associated with each position which the permanent magnet (3) may assume and a control signal (S) corresponding to the desired function.

Abstract translation: 二维位置传感器（1）可以有利地用于从车辆的方向盘控制的转向系统中，并且包括固定到控制杆（4）上的永磁体（3），以便在沿着 第一（X）和第二（Y）方向，并且绕与前一个正交的第三方向（W）旋转。 永磁体可相对于包括沿着第一方向间隔布置的第一组传感器元件（101-103）的集成装置移动，第二组传感器元件（104-107）沿第二方向间隔布置，第三组传感器元件 一组检测永磁体的角位置的传感器元件（108-109）。 与传感器元件集成的电子产生与永磁体（3）可能呈现的每个位置相关联的代码和对应于期望功能的控制信号（S）。

公开(公告)号：EP1640726A1

公开(公告)日：2006-03-29

申请号：EP04425705.3

申请日：2004-09-22

Applicant: STMicroelectronics S.r.l.

Inventor： Merassi, Angelo ,  Zerbini, Sarah ,  Vigna, Benedetto

IPC: G01P15/125 ,  G01P15/18

CPC classification number: G01P15/125 ,  G01P2015/082

Abstract: In a micro-electromechanical structure (1; 30; 60; 70) of semiconductor material, a detection structure (19; 31) is formed by a stator (5; 35; 61) and by a rotor (4; 34), which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure (24; 46) of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure (19; 31) thereby the micro-electromechanical structure (1; 30; 60; 70) supplies an output signal (ΔC, V OUT ) correlated to the external stress and compensated in temperature.

Abstract translation: 在一个微机电结构（1; 30; 60; 70）的半导体材料，一检测结构（19; 31）和由一个转子（4; 34），其由定子（; 35 61 5）来形成 是可移动的相对于彼此在外部应力的存在，并有可能对热应力; 补偿结构（24; 46）的微机电型，受到热应力和不变相对于外部应力的，被连接到所述检测结构（19; 31），从而所述微机电结构（1; 30; 60; 70）提供给关联于外部压力和温度的补偿的输出信号（“C，V OUT）。

公开(公告)号：EP0890978B1

公开(公告)日：2005-09-28

申请号：EP97830345.1

申请日：1997-07-10

Applicant: STMicroelectronics S.r.l.

Inventor： Vigna, Benedetto ,  Ferrari, Paolo ,  Ferrera, Marco ,  Montanini, Pietro

IPC: H01L21/00 ,  G01P15/00 ,  G01C19/00 ,  B81B3/00

CPC classification number: H01L21/764 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2203/0136 ,  B81B2203/0307 ,  B81C1/00246 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0735 ,  G01C19/56 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  H01L21/76202

公开(公告)号：EP1519197A1

公开(公告)日：2005-03-30

申请号：EP03425623.0

申请日：2003-09-26

Applicant: STMicroelectronics S.r.l.

Inventor： Zerbini, Sarah ,  Merassi, Angelo ,  Lasalandra, Ernesto ,  Vigna, Benedetto

IPC: G01P15/125 ,  G01P15/08 ,  G01P15/18 ,  H04M1/02

CPC classification number: G01P15/0891 ,  G01P15/125 ,  G01P2015/0857 ,  H04M2250/12

Abstract: A planar inertial sensor (1), comprising a first region and a second region (3, 2) of semiconductor material, the second region (2) being capacitively coupled and being mobile with respect to the first region (3), which is fixed. The second region (2) extends in a plane and has second portions (4), which face respective first portions (11) of the first region (3) and are mobile with respect to these so as to modify the distance between them the second region (2) translate with respect to the first region (3) in any direction belonging to the plane of the second region (2).

Abstract translation: 一种平面惯性传感器（1），包括半导体材料的第一区域和第二区域（3,2），所述第二区域（2）电容耦合并且相对于所述第一区域（3）是可移动的，所述第一区域固定 。 第二区域（2）在平面中延伸并且具有面对第一区域（3）的相应的第一部分（11）的第二部分（4）并且可相对于它们移动，以便改变它们之间的距离第二区域 区域（2）在属于第二区域（2）的平面的任何方向上相对于第一区域（3）平移。

公开(公告)号：EP0856825B1

公开(公告)日：2004-11-17

申请号：EP97830034.1

申请日：1997-01-31

Applicant: STMicroelectronics S.r.l.

Inventor： Mastromatteo, Ubaldo ,  Vigna, Benedetto

IPC: G08B1/00 ,  G01N27/12

CPC classification number: G01N27/12