公开(公告)号：WO2004064097A3

公开(公告)日：2004-07-29

申请号：PCT/EP2004/000312

申请日：2004-01-16

Applicant: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH ,  SCHLICHTING, Hartmut

Inventor： SCHLICHTING, Hartmut

IPC: H01J37/02

Abstract: The invention provides a charged particle beam device (1) to inspect or structure a specimen (3) comprising a charged particle beam source (5) to generate a charged particle beam (7), a beam optical system (16) to direct the charged particle beam (7) onto said specimen (3) and a gas supply system (10) providing a gas (12) for the charged particle beam device (1), whereby the gas supply system (10) comprises a plurality of at least ten tubes (14; 15; 22) to direct said gas (12) to a desired region (68) for interaction with the specimen (3). The gas support system enables the charged particle beam device to provide sufficient gas for decharging the specimen with a total gas flow which is significantly lower than the total gas flow of charged particle beam devices using previously known gas supply systems. A lower total gas flow helps to improve the vacuum in the charged particle beam region.

公开(公告)号：WO2002082497A1

公开(公告)日：2002-10-17

申请号：PCT/EP2002/003866

申请日：2002-04-08

Applicant: ICT, INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH ,  WINKLER, Dieter ,  ADAMEC, Pavel

Inventor： WINKLER, Dieter ,  ADAMEC, Pavel

IPC: H01J37/304

CPC classification number: H01J37/073 ,  H01J37/304 ,  H01J2237/06316 ,  H01J2237/0635 ,  H01J2237/31774

Abstract: The invention provides a focussing electron beam device comprising a single or an array of field emitter beam sources to generate electron beams with field emitter beam sources, at least one anode capable of accelerating the electrons of the electron beams towards a specimen, focussing components capable of focussing the electron beams onto the specimen and a control circuit that: a) senses for deviations of the actual current values of the electron beams from desired current values; b) controls first voltages V1 to adjust the actual current values of the electron beams to the desired current values; and c) controls second voltages V2 to adjust the actual focus positions of the electron beams to the desired focus positions. The voltage control circuit adjusts the actual current values of the electron beams to the desired current values and makes it possible to adjust the current values of an array of electron beams to a single value. Furthermore, a focussing electron beam device is disclosed with an array of field emitter beam sources integrated onto a substrate, which makes it possible to have arrays of field emitter beam sources with thousands or even millions of field emitter beam sources. With the integration of the control circuits for each field emitter beam source it is possible to adjust the current values and focus positions of each electron beam individually. Furthermore, methods are disclosed describing the operation of a single field emitter beam source or an array of field emitter beam sources.

Abstract translation: 本发明提供了一种聚焦电子束装置，其包括场致发射束源的单个阵列或阵列，以产生具有场致发射束源的电子束，至少一个阳极能够将电子束的电子加速朝向检体， 将电子束聚焦到样品上，并且控制电路：a）感测电子束的实际电流值与期望电流值的偏差; b）控制第一电压V1以将电子束的实际电流值调整到期望的电流值; 以及c）控制第二电压V2以将电子束的实际焦点位置调整到期望的聚焦位置。 电压控制电路将电子束的实际电流值调整到期望的电流值，并且可以将电子束阵列的电流值调整为单个值。 此外，公开了一种聚焦电子束器件，其集成在衬底上的场发射器束源的阵列，这使得可以具有数千甚至数百万场发射器束源的场致发射束源阵列。 通过对每个场发射器束源的控制电路的集成，可以单独地调整每个电子束的电流值和聚焦位置。 此外，公开了描述单个场发射器束源或场发射器束源的阵列的操作的方法。

公开(公告)号：WO2021233584A1

公开(公告)日：2021-11-25

申请号：PCT/EP2021/055856

申请日：2021-03-09

Applicant: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH

Inventor： WINKLER, Dieter ,  WÖLLERT, Bernd ,  SCHABINGER, Birgit

IPC: H01J37/04 ,  H01J37/244

Abstract: A charged particle beam device 10 for imaging and/or inspecting a sample 140 is described. The charged particle beam device includes a beam emitter 150 for emitting a primary charged particle beam 105; a retarding field device 100 for retarding the primary beam before impinging on the sample, the retarding field device including an objective lens 110 and a proxy electrode 130; and a first detector 120 for off-axial backscattered particles between the proxy electrode and the objective lens. The charged particle beam device is adapted for guiding the primary beam along an optical axis 101 to the sample for releasing signal particles. The proxy electrode includes one opening 131 allowing a passage of the primary charged particle beam and of the signal particles, wherein the one opening is sized to allow a passage of charged particles backscattered from the sample at angles from 0° to 20° or above relative to the optical axis. Further, a method for imaging and/or inspecting a sample with a charged particle beam device is described.

公开(公告)号：WO2021151629A1

公开(公告)日：2021-08-05

申请号：PCT/EP2021/050164

申请日：2021-01-07

Applicant: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH

Inventor： WINKLER, Dieter

IPC: H01J37/073 ,  H01J37/21 ,  H01J37/18

Abstract: A method of operating a charged particle gun (102) is described. The method includes providing an emitter (122) at a first emitter potential within the charged particle gun and providing a trapping electrode (142) at a first electrode potential within the charged particle gun, wherein the first emitter potential and the first electrode potential is provided to have an electrical field of essentially zero at the emitter and at the trapping electrode; switching the trapping electrode from the first electrode potential to a second electrode potential different from the first electrode potential to generate an electrostatic trapping field at the trapping electrode; and after switching the trapping electrode from the first electrode potential to the second electrode potential, switching on an electrostatic emission field at the emitter.

公开(公告)号：WO2020187696A1

公开(公告)日：2020-09-24

申请号：PCT/EP2020/056689

申请日：2020-03-12

Applicant: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH

Inventor： WINKLER, Dieter ,  COOK, Benjamin John

IPC: H01J37/147

Abstract: A beam splitter for generating a plurality of charged particle beamlets from a charged particle source is disclosed. The beam splitter includes a plurality of beamlet deflectors, which each pass a beamlet along an optical axis. Each beamlet deflector includes a low order element and a corresponding high order element. Each low order element has fewer electrodes than each corresponding high order element; and each low order element is one of a plurality of low order elements; and each corresponding high order element is one of a plurality of high order elements.

公开(公告)号：WO2014202532A1

公开(公告)日：2014-12-24

申请号：PCT/EP2014/062570

申请日：2014-06-16

Applicant: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH

Inventor： FROSIEN, Jürgen ,  COOK, Benjamin John

IPC: H01J37/147 ,  H01J37/153 ,  H01J37/26

CPC classification number: H01J37/045 ,  H01J37/1478 ,  H01J37/153 ,  H01J37/263 ,  H01J2237/1534 ,  H01J2237/281 ,  H01J2237/2815

Abstract: A charged particle beam device is described. The charged particle beam device includes a charged particle beam source (12) for emitting a charged particle beam, and a switchable multi-aperture (26) for generating two or more beam bundles (21a, 21b) from the charged particle beam, wherein the switchable multi-aperture includes: two or more aperture openings, wherein each of the two or more aperture openings is provided for generating a corresponding beam bundle of the two or more beam bundles; a beam blanker arrangement (226) configured for individually blanking the two or more beam bundles; and a stopping aperture (227) for blocking beam bundles, which are blanked off by the beam blanker arrangement. The device further includes a control unit electrically connected to the beam blanker arrangement and configured to control the individual blanking of the two or more beam bundles for switching of the switchable multi-aperture and an objective lens (18) configured for focusing the two or more beam bundles on a specimen (19) or wafer, wherein the two or more beam bundles are tilted with respect to the specimen or wafer depending on the position of each of the two or more beam bundles relative to an optical axis defined by the objective lens, and wherein the objective lens is configured for focusing the charged particle beam source, a virtual source provided by the charged particle beam source or a crossover.

Abstract translation: 描述带电粒子束装置。 带电粒子束装置包括用于发射带电粒子束的带电粒子束源（12）和用于从带电粒子束产生两个或更多束束（21a，21b）的可切换多孔（26），其中 可切换的多孔径包括：两个或更多个孔口，其中两个或更多个孔径开口中的每一个被设置用于产生两个或更多个束束的对应的束束; 光束消除器布置（226），其被配置为单独地消隐所述两个或更多束束; 以及用于阻挡束束的停止孔（227），其被光束消除器布置消隐。 该装置还包括电连接到光束消隐装置并被配置为控制用于切换可切换多孔径的两个或更多束束的单独消隐的控制单元和被配置用于聚焦两个或多个 束（束）在样本（19）或晶片上，其中根据两个或多个束束中的每一个相对于由物镜限定的光轴的位置，两束或更多束束相对于样本或晶片倾斜 ，并且其中所述物镜被配置为聚焦所述带电粒子束源，由所述带电粒子束源提供的虚拟源或交叉。

公开(公告)号：WO2005071708A2

公开(公告)日：2005-08-04

申请号：PCT/EP2005/000598

申请日：2005-01-21

Applicant: ICT INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH ,  FEUERBAUM, Hans-Peter

Inventor： FEUERBAUM, Hans-Peter

IPC: H01J37/00

CPC classification number: H01J37/28 ,  H01J37/12

Abstract: The present invention relates to a focussing lens (100) for focussing a charged particle beam (7) onto a specimen (3) at a predetermined landing angle (42; 42'; 42) comprising at least one first electrode (26, 105, 105a) having a first aperture (106) to generate a focussing electric field (110) for focussing the charged particle beam (7) onto the specimen (3); and a correcting electrode having a curved surface (115) to compensate for landing angle dependent distortions of the focussing electric field (110) caused by the specimen (3). With the curved surface (115) of the correcting electrode it is possible to improve the focussing of a charged particle beam at landing angles that differ from the perpendicular landing angle.

Abstract translation: 本发明涉及用于以预定的着陆角（42; 42'; 42）将带电粒子束（7）聚焦到样本（3）上的聚焦透镜（100），其至少包括 一个具有第一孔径（106）的第一电极（26,105,105a），用于产生用于将带电粒子束（7）聚焦到样本（3）上的聚焦电场（110）; 以及校正电极，其具有曲面（115）以补偿由样本（3）引起的聚焦电场（110）的与着屏角度相关的失真。 利用校正电极的弯曲表面（115），可以改善带电粒子束在与垂直着陆角不同的着陆角处的聚焦。

公开(公告)号：WO2004088709A1

公开(公告)日：2004-10-14

申请号：PCT/EP2004/003329

申请日：2004-03-29

Applicant: ICT, INTEGRATED CIRCUIT TESTING GESELLSCHAFT FÜR HALBLEITERPRÜFTECHNIK MBH ,  SELLMAIR, Josef

Inventor： SELLMAIR, Josef

IPC: H01J37/317

CPC classification number: H01J37/243 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/3023 ,  H01J37/3174 ,  H01J2237/06341 ,  H01J2237/31774 ,  H01J2237/31796

Abstract: An apparatus for producing a beam of charged particles is provided, which comprises an emitter (1, 2) and a switching device (3) adapted to switch between first, second and third beam current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample, the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and the beam current at said third current level is lower than the beam current at the second current level. Furthermore, a method of controlling the beam current of a charged particle beam is provided, comprising the steps of switching the beam current of said charged particle beam between first and second current levels, wherein the beam current at said first current level is suitable for writing a pixel of an image on the surface of a sample and the beam current at said second current level is suitable for not writing a pixel on the surface of said sample, and switching the beam current to a third voltage level, wherein the beam current at said third current level is lower than the beam current at the second current level.

Abstract translation: 提供一种用于产生带电粒子束的装置，其包括适于在第一，第二和第三束电流水平之间切换的发射极（1,2）和开关装置（3），其中所述第一电流电平 适合于在样品的表面上写入图像的像素，所述第二电流水平的束电流适于不在所述样品的表面上写入像素，并且所述第三电流水平的束电流低于 束电流处于第二电流电平。 此外，提供了一种控制带电粒子束的束电流的方法，包括以下步骤：将所述带电粒子束的束电流切换在第一和第二电流水平之间，其中所述第一电流水平的束电流适于写入 在样品表面上的图像的像素和在所述第二电流电平处的束电流适合于不在所述样品的表面上写入像素，并且将束电流切换到第三电压电平，其中， 所述第三电流水平低于在第二电流水平的束电流。

公开(公告)号：WO2004064097A2

公开(公告)日：2004-07-29

申请号：PCT/EP2004000312

申请日：2004-01-16

Applicant: INTEGRATED CIRCUIT TESTING ,  SCHLICHTING HARTMUT

Inventor： SCHLICHTING HARTMUT

IPC: G21K1/00 ,  G01Q10/00 ,  G01Q30/16 ,  G21K5/04 ,  H01J37/02 ,  H01J37/20 ,  H01J37/28 ,  H01L21/027 ,  H01J

CPC classification number: H01J37/026 ,  H01J2237/2817

Abstract: The invention provides a charged particle beam device (1) to inspect or structure a specimen (3) comprising a charged particle beam source (5) to generate a charged particle beam (7), a beam optical system (16) to direct the charged particle beam (7) onto said specimen (3) and a gas supply system (10) providing a gas (12) for the charged particle beam device (1), whereby the gas supply system (10) comprises a plurality of at least ten tubes (14; 15; 22) to direct said gas (12) to a desired region (68) for interaction with the specimen (3). The gas support system enables the charged particle beam device to provide sufficient gas for decharging the specimen with a total gas flow which is significantly lower than the total gas flow of charged particle beam devices using previously known gas supply systems. A lower total gas flow helps to improve the vacuum in the charged particle beam region.

Abstract translation: 本发明提供了一种带电粒子束装置（1），用于检查或构造包括带电粒子束源（5）的样品（3），以产生带电粒子束（7）;束光学系统（16） 所述样品（3）上的颗粒束（7）和提供用于带电粒子束装置（1）的气体（12）的气体供应系统（10），由此气体供应系统（10）包括多个至少十个 管（14; 15; 22），以将所述气体（12）引导到期望的区域（68）以与样品（3）相互作用。 气体支撑系统使带电粒子束装置能够提供足够的气体，用于对总体气体流量进行放电，该气体流量明显低于使用先前已知的气体供应系统的带电粒子束装置的总气体流量。 较低的总气流有助于改善带电粒子束区域中的真空度。

公开(公告)号：WO2003005398A1

公开(公告)日：2003-01-16

申请号：PCT/EP2002/007247

申请日：2002-07-01

Applicant: ICT, INTEGRATED CIRCUIT TESTING GMBH ,  ADAMEC, Pavel ,  WINKLER, Dieter

Inventor： ADAMEC, Pavel ,  WINKLER, Dieter

IPC: H01J1/308

CPC classification number: H01J1/3044 ,  H01J2201/319

Abstract: The invention provides an electron beam device 1 comprising at least one field emission cathode 3 and at least one extracting electrode 5, whereby the field emission cathode 5 comprises a p-type semiconductor region 7 connected to an emitter tip 9 made of a semiconductor material, an n-type semiconductor region 11 forming a pn-diode junction 13 with the p-type semiconductor region 7, a first electric contact 15 on the p-type semiconductor region 7 and a second electric contact 17 on the n-type semiconductor region 11. The p-type semiconductor region 7 prevents the flux of free electrons to the emitter unless electrons are injected into the p-type semiconductor region 7 by the pn-diode junction 13. This way, the field emission cathode 3 can generate an electron beam where the electron beam current is controlled by the forward biasing second voltage V2 across the pn-diode junction. Such electron beam current has an improved current value stability. In addition the electron beam current does not have to be stabilized anymore by adjusting the voltage between emitter tip 9 and extracting electrode 5 which would interfere with the electric field of electron beam optics. The present invention further provides the field emission cathode as described above and an array of field emission cathodes. The invention further provides a method to generate at least one electron beam.

Abstract translation: 本发明提供了一种包括至少一个场发射阴极3和至少一个提取电极5的电子束装置1，由此场致发射阴极5包括连接到由半导体材料制成的发射极尖端9的p型半导体区域7， 与p型半导体区域7形成pn二极管结13的n型半导体区域11，p型半导体区域7上的第一电接触15和n型半导体区域11上的第二电接触17 p型半导体区域7防止自由电子束流到发射极，除非电子通过pn二极管结13注入到p型半导体区域7中。这样，场发射阴极3可以产生电子束 其中电子束电流通过pn二极管结的正向偏置第二电压V2来控制。 这种电子束电流具有改善的电流值稳定性。 此外，电子束电流不必通过调节发射极尖端9和提取电极5之间的电压来进一步稳定，这将影响电子束光学器件的电场。 本发明还提供如上所述的场致发射阴极和场发射阴极阵列。 本发明还提供了一种产生至少一个电子束的方法。