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公开(公告)号：KR1020010112731A
公开(公告)日：2001-12-21
申请号：KR1020000032150
申请日：2000-06-12
Applicant: 한국과학기술연구원
IPC: H01M4/36
CPC classification number: H01M4/131 , H01M4/1391 , H01M4/485 , H01M4/624 , H01M4/626 , H01M10/052
Abstract: The present invention is a modular jack assembly which includes an outer insulative housing having top and bottom walls and opposed lateral walls while defining an interior section. This housing also has front and rear open ends. This assembly also includes an insulative insert having a top section, an upper side and a rear section having a base side and a recess. This jack is positioned so that the upper side of its top section is adjacent to top side of the insulative housing such that its terminal end extends into the interior section of the insulative housing and the rear section at least partially covers the rear open end of the insulative housing. This assembly also includes an electronic component mounted in the recess in the rear section of the insulative insert. A conductor is mounted in the electrical insert.
Abstract translation: 本发明是一种模块化插座组件，其包括具有顶壁和底壁以及相对的侧壁同时限定内部部分的外绝缘外壳。 该外壳还具有前端和后端开口端。 该组件还包括具有顶部，上侧和后部的绝缘插入件，其具有基部侧和凹部。 这个千斤顶定位成使得其顶部的上侧邻近绝缘壳体的顶侧，使得其顶端延伸到绝缘壳体的内部部分中，并且后部部分至少部分地覆盖绝缘壳体的后开口端 绝缘住房 该组件还包括安装在绝缘插入件的后部中的凹部中的电子部件。 导体安装在电气插件中。
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公开(公告)号：KR1020010097673A
公开(公告)日：2001-11-08
申请号：KR1020000021951
申请日：2000-04-25
Applicant: 한국과학기술연구원
IPC: H01M4/00
CPC classification number: Y02E60/13
Abstract: PROBLEM TO BE SOLVED: To provide a thin film super capacitor that can be applied to ultra- compact precision parts and the power source of information communication equipment by composing a thin film battery in a hybrid and individually, the manufacturing method of the thin film super capacitor, and a hybrid battery utilizing the thin film super capacitor. SOLUTION: A lower electrode thin film (23) with a thickness of 4 μm or less is formed on a substrate (20), a solid electrolyte thin film (24) with a thickness of 5 μm or less is formed on the lower electrode thin film (23), and an upper electrode thin film (25) with a thickness of 4 μm or less is formed on the solid electrolyte thin film (24), thus composing the thin film super capacitor. By utilizing the thin film super capacitor, the hybrid battery is composed.
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公开(公告)号：KR100307886B1
公开(公告)日：2001-09-24
申请号：KR1019990040271
申请日：1999-09-18
Applicant: 한국과학기술연구원
IPC: C04B35/465 , H01B3/12
Abstract: 조성식 Ca[(LiNb)Ti]O(x는 0≤x≤0.5)로표시되는고주파용유전체세라믹스조성물이제공된다. 이조성물은높은품질계수와유전율을가지며, 공진주파수의온도계수(TCF)가안정하면서조성의변화에따라 TCF를 0 ppm/℃까지조절이가능하여고주파용유전체세라믹스부품의재료로서사용될수 있을뿐만아니라, 소결온도가낮고, 소결시간도짧아양산시생산단가절감에유리한재료이다.
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公开(公告)号：KR1020010076662A
公开(公告)日：2001-08-16
申请号：KR1020000003940
申请日：2000-01-27
Applicant: 한국과학기술연구원
IPC: H01C7/10
CPC classification number: H01C17/12 , G01K7/183 , H01J37/32082 , H01J37/3408
Abstract: PURPOSE: A cryogenic resistance thermometer thin film and a manufacturing method thereof are provided to simplify a manufacturing process and prevent air pollution. CONSTITUTION: A thin film is a (one of La, Nd and Pr)-(one of Ca, Sr, Ba and Pb)-Mn-O having colossal magnetoresistance. The thin film is expressed by a linear equation in which a natural value to resistance value is within a predetermined error range to an absolute temperature in a low temperature area. The thin film may be La-Ca-Mn-O. The low temperature is 77K to 230K. The thin film may be La-Sr-Mn-O and the low temperature area is less than 300K. The error range is within 0.5. The thin film is formed on a substrate selected from the group consisting of a LaAlO3(001) substrate, MgO, Al2O3, SrTiO3 and Si containing substrate. The thin film is 30nm to 1000nm in thickness. The thin film of (one of La, Nd and Pr)-(one of Ca, Sr, Ba and Pb)-Mn-O having colossal magnetoresistance is deposited on the substrate by an RF magnetron sputtering method and thermally treated at a temperature ranging from 600 to 1000°C for 0.5 to 24 hours.
Abstract translation: 目的：提供一种低温电阻温度计薄膜及其制造方法，以简化制造过程并防止空气污染。 构成：薄膜是具有巨大磁阻的（La，Nd和Pr）之一（Ca，Sr，Ba和Pb中的一种）-Mn-O。 薄膜由线性方程表示，其中电阻值的自然值在低温区域内的绝对温度的预定误差范围内。 该薄膜可以是La-Ca-Mn-O。 低温为77K〜230K。 薄膜可以是La-Sr-Mn-O，低温区域小于300K。 误差范围在0.5以内。 该薄膜形成在选自由LaAlO 3（001）衬底，MgO，Al 2 O 3，SrTiO 3和含Si衬底组成的组中的衬底上。 该薄膜的厚度为30nm至1000nm。 通过RF磁控溅射法将具有巨磁电阻的（La，Nd和Pr中的一种）（Ca，Sr，Ba和Pb中的一种） - Mn-O的薄膜沉积在衬底上，并在温度范围 在600〜1000℃下进行0.5〜24小时。
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公开(公告)号：KR1020010027969A
公开(公告)日：2001-04-06
申请号：KR1019990039969
申请日：1999-09-17
Applicant: 한국과학기술연구원
IPC: C04B40/00
CPC classification number: C04B41/53 , C04B2235/6025
Abstract: PURPOSE: A method for preparing ceramics thick film is provided which improves the drying speed of a ceramics thick film process and significantly reduces phenomena of the thick film being cracked, by using a solvent washing method. CONSTITUTION: In the method for preparing ceramics thick film by a water system tape casting method, the thick film is washed with an organic solvent in a drying process of the ceramics thick film passed through a blade. The organic solvent is selected from the group consisting of methanol, ethanol, acetone, benzaldehyde, benzene, benzyl alcohol, n-butyl alcohol, carbon tetrachloride, cyclohexane, ethyl acetate, n-hexane, iso-butyl alcohol, iso-propyl alcohol, methyl ethyl ketone, n-octyl alcohol, n-propyl alcohol, toluene and xylene.
Abstract translation: 目的：提供一种制备陶瓷厚膜的方法，通过使用溶剂洗涤方法，可提高陶瓷厚膜工艺的干燥速度，并显着减少厚膜破裂现象。 构成：在通过水系带状流延法制备陶瓷厚膜的方法中，在通过刀片的陶瓷厚膜的干燥过程中，用有机溶剂洗涤厚膜。 有机溶剂选自甲醇，乙醇，丙酮，苯甲醛，苯，苄醇，正丁醇，四氯化碳，环己烷，乙酸乙酯，正己烷，异丁醇，异丙醇， 甲基乙基酮，正辛醇，正丙醇，甲苯和二甲苯。
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Patent Agency Ranking
公开(公告)号：KR1020010017335A
公开(公告)日：2001-03-05
申请号：KR1019990032788
申请日：1999-08-10
Applicant: 한국과학기술연구원
IPC: G01N27/407
Abstract: PURPOSE: A gas sensor is provided to improve the sensing characteristic by offering an excellent detecting film. CONSTITUTION: A gas sensor comprises an electrode(2) on a substrate(1); a solid solution thin/thick film type detecting film(3) of a WO 3 and a p-type semi-conductive material on the substrate; a heater(4) under the substrate; and an insulating material(5) under the substrate. The gas sensor detects detectable gases such as ammonia and so on. The detecting film increases the sintering property by adding the p type semi-conductive material in the WO 3 . The detecting film increases the reactivity with a NOx by controlling an amount of conductive carriers inside the film. The detecting film comprises a solid solution containing more than one p-type semi-conductive material groups of CuO, NiO, CoO, Cr 2 O 3 , Cu 2 O, MoO 3 , Bo 2 O 3 , MnO 2 and Pr 2 O 3 .
Abstract translation: 目的：提供气体传感器，通过提供优异的检测膜来提高感测特性。 构成：气体传感器包括在基底（1）上的电极（2）; 在基板上的固体溶液薄/厚膜型检测膜（3）和p型半导体材料; 在基底下方的加热器（4）; 和衬底下方的绝缘材料（5）。 气体传感器检测可检测的气体，如氨等。 检测膜通过在WO
3 中添加p型半导体材料来增加烧结性能。 检测膜通过控制膜内的导电载体的量来增加与NOx的反应性。 检测膜包括含有多于一种p型半导电材料组的CuO，NiO，CoO，Cr 2 O 3的固溶体 ，Cu 2 O，MoO 3 ，Bo 2 O 3 ，MnO 2 和Pr 2 O 3 。 -
公开(公告)号：KR1020010013156A
公开(公告)日：2001-02-26
申请号：KR1019997011139
申请日：1998-11-21
Applicant: 한국과학기술연구원
IPC: C23C4/00
CPC classification number: C23C16/30 , B05D1/62 , B05D5/083 , B05D2201/00 , B05D2203/30 , C23C16/503
Abstract: PURPOSE: A method for surface-processing by plasma polymerization of a surface of a metal by using a DC discharge plasma is provided, to form a polymer with hydrophilicity or hydrophobicity on the surface of the metal. CONSTITUTION: The method comprises the steps of: positioning an anode electrode which is substantially of metal to be surface-processed and a cathode electrode in a chamber; maintaining a pressure in the chamber at a predetermined vacuum level; blowing an unsaturated aliphatic hydrocarbon monomer gas or a fluorine-containing monomer gas at a predetermined pressure and a non-polymerizable gas at a predetermined pressure into the chamber; and applying a voltage to the electrodes in order to obtain a DC discharge, whereby to obtain a plasma consisting of positive and negative ions and radicals generated from the unsaturated aliphatic hydrocarbon monomer gas or the fluorine containing monomer gas and the non-polymerizable gas, and then forming a polymer with hydrophilicity or hydrophobicity on the surface of the anode electrode by plasma deposition.
Abstract translation: 目的：提供通过使用DC放电等离子体通过等离子体聚合金属表面进行表面处理的方法，以在金属的表面上形成具有亲水性或疏水性的聚合物。 构成：该方法包括以下步骤：将基本上要被表面处理的金属和阴极电极的阳极电极定位在腔室中; 将腔室中的压力保持在预定的真空度; 将预定压力的不饱和脂族烃单体气体或含氟单体气体以预定压力的不可聚合气体吹入室中; 向电极施加电压以获得DC放电，从而获得由不饱和脂族烃单体气体或含氟单体气体和非聚合气体产生的正离子和负离子和自由基组成的等离子体，以及 然后通过等离子体沉积在阳极电极的表面上形成具有亲水性或疏水性的聚合物。
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公开(公告)号：KR100275782B1
公开(公告)日：2000-12-15
申请号：KR1019950011460
申请日：1995-05-10
Applicant: 한국과학기술연구원
IPC: H01L21/20
CPC classification number: C23C14/088 , C23C14/024
Abstract: PURPOSE: A method for manufacturing a ferroelectric thin film is provided to restrict a fine crack by using a sputtering method or a laser ablation method. CONSTITUTION: A ferroelectric thin film(120) of Pb(Zr1-xTix)O3 is formed by using one method selected from a pure sol-gel method such as a spin coating and a dip coating, MOCVD, LSCVD, and MOD. A buffering layer(110,130) including a component of Pb is inserted in the process for manufacturing the ferroelectric thin film(120). The buffering layer(110,130) has a thickness of 10-100nm. The buffering layer(110,130) is formed with one of Pb(Zr1-xTix))3, PbO, and PbTiO3 including Pb.
Abstract translation: 目的：提供一种制造铁电薄膜的方法，通过使用溅射法或激光烧蚀法来限制微细裂纹。 构成：通过使用选自旋涂法，浸涂法，MOCVD法，LSCVD法和MOD法等纯溶胶 - 凝胶法的一种方法形成Pb（Zr1-xTix）O3的铁电薄膜（120）。 在制造铁电薄膜（120）的过程中插入包括Pb成分的缓冲层（110,130）。 缓冲层（110,130）的厚度为10-100nm。 缓冲层（110,130）由包含Pb的Pb（Zr1-xTix）3，PbO和PbTiO3中的一种形成。
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公开(公告)号：KR100242792B1
公开(公告)日：2000-03-02
申请号：KR1019970023758
申请日：1997-06-10
Applicant: 한국과학기술연구원
IPC: G01N27/14
Abstract: 본 발명은, 히터의 노출에 따른 에너지 낭비를 막고 측정 부위의 가스 흐름이나 외부 조건에 의존하여 감지막에 전달되는 온도를 일정하게 조절하여 센싱 특성을 안정화시킨 반도체식 가스 센서를 제공하기 위하여, 박막증착용 알루미나 기판 앞면에 소정의 패턴으로 형성되는 백금 박막 전극과; 상기 전극이 형성된 기판의 앞면에 증착되는 NO
x 가스 감지용 산화텅스텐 박막과; 상기 알루미나 기판 뒷면에 형성되어 상기 감지막 부위의 온도를 일정하게 유지하기 위한 히터와; 상기 알루미나 기판의 뒷면에 형성되는, 상기 히터를 완전히 매몰시켜 상기 히터를 외부에 대하여 방열하기 위한, 알루미나, 뮬라이트, 코디에라이트, 마그네시아 및 지르코니아로 이루어지는 군에서 선택되는 어느 하나의 재료로 만들어지는 쉬트;를 포함하는 센싱 특성이 안정화된 반도체식 판상 가스 센서 및 알루미나봉과; 상기 알루미나봉위에 형성되는 히터와; 상기 알루미나봉위에 감겨지는, 상기 히터를 완전히 매몰시켜 상기 히터를 외부에 대하여 방열하기 위한, 알루미나, 뮬라이트, 코디에라이트, 마그네시아 및 지르코니아로 이루어지는 군에서 선택되는 어느 하나의 재료로 만들어지는 쉬트와; 상기 쉬트위에 소정의 패턴으로 형성되는 백금 박막 전극과; 상기 전극위에 증착되는 NO
x 가스 감지용 산화텅스텐 박막;을 포함하는 센싱 특성이 안정화된 반도체식 봉상 가스 센서 및 그의 제조방법을 제공한다.-
公开(公告)号：KR1020000002283A
公开(公告)日：2000-01-15
申请号：KR1019980022956
申请日：1998-06-18
Applicant: 한국과학기술연구원
IPC: H01M6/46
Abstract: PURPOSE: A thin film battery manufacturing method is provided to improve the performance of the thin film battery such as the current density, the total current storing density, the charging speed and so forth. CONSTITUTION: The thin film battery manufacturing method comprises the steps of: forming a trench on a substrate; evaporating a lower collector on the trench; evaporating a cathode and an electrolyte film on the lower collector; evaporating an anode; evaporating an upper collector regardless of the flatting process or doing it after performing the encapsulation process; and connecting the cathode with the upper collector by performing the photolithography process.
Abstract translation: 目的：提供薄膜电池制造方法，以提高薄膜电池的性能，如电流密度，总电流存储密度，充电速度等。 构成：薄膜电池制造方法包括以下步骤：在基板上形成沟槽; 在沟槽上蒸发下集电极; 在下集电器上蒸发阴极和电解质膜; 蒸发阳极; 无论平整过程如何蒸发上集电器，或在执行封装工艺后进行; 并通过执行光刻工艺将阴极与上部集电体连接。
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