Abstract:
A method for generating terahertz waves using a DFB(Distributed feedback) laser device is provided to change difference between two mode frequencies emitted from a multiregional DFB laser device from a low frequency to a THz region by changing period difference of a diffraction grating. A first diffraction grating is formed in a first DFB region including a lower waveguide(102) on a substrate(101), an active layer(110) formed on the lower waveguide, and a waveguide on the active layer. A second diffraction grating is formed in a second DFB region which is separated from the first DFB region and includes the lower waveguide, the active layer, and the upper waveguide on the substrate. A phase tuning section is formed between the first DFB region with the first diffraction grating and the second DFB region with the second diffraction grating. A first oscillating wave and a second oscillating wave are generated in the first and second DFB regions by supplying a first current to the first DFB region with the first diffraction grating and a second current to the second DFB region with the second diffraction grating. The phases of the fist and second oscillating waves are controlled by supplying a phase control current to the phase tuning section. The first and second oscillating waves with controlled phases are photo-mixed.
Abstract:
본 발명은 광통신(optical communication)에 쓰이는 광송수신기로서, 광원과 수광소자 사이에 전기적 교화(crosstalk)가 억제되는 광송수신기(optical transceiver) 모듈을 제공한다. 그 광송수신기 모듈은 광송수신기( optical transceiver)에 있어서, 기판에 함께 집적되는 광원 및 수광소자를 구비한 광송수신소자; 광원을 구동하는 구동회로 및 수광소자의 신호를 읽어내는 검출회로를 구비한 회로부; 및 기판 및 접지(ground) 사이에 연결되고 상기 광원과 수광소자 사이의 전기적 교화(crosstalk)를 방지하는 교화 방지수단;을 포함한다. 광송수신기(optical transceiver), 광원(optical source), 레이저 다이오드(Laser Diode), 수광소자(photodetector), 교화(crosstalk), 단일기판 광송수신기(monolithic optical transceiver)
Abstract:
본 발명은 전기 광학적 크로스토크 및 수율을 개선할 수 있는 트랜스미터 및 리시버를 포함하는 양방향 모듈 및 그 제조방법을 개시한다. 개시된 본 발명은, 트랜스미터 및 리시버로 구성되는 양방향 모듈로서, 상기 트랜스미터는 외부 공동(external cavity)을 갖는 DFB(distributed feedback) 레이저 다이오드를 포함한다. 양방향 모듈, 레이저 다이오드, 크로스토크, 외부 공동
Abstract:
PURPOSE: An SG-DFB(Sampled Grating Distributed Feed-Back) tunable semiconductor laser WITH an SG-DBR(Sampled Grating Distributed Bragg Reflector) is provided to tune a wavelength by integrating an SG-DFB structure and an SG-DBR structure and forming a phase control region of the SG-DFB structure. CONSTITUTION: A sampled grating(39) is formed on an n-type InP substrate(31) used as a lower clad layer. A phase control region of an InGaAsP waveguide and a gain region of an active layer are formed on the sampled grating. A p-type InP clad layer(32) used as an upper clad layer is formed thereon. A plurality of electrodes are formed on the p-type InP clad layer. A phase control region electrode(36) is formed on the phase control region. A gain region electrode(37) is formed on the gain region. A non-reflective thin film(33) is formed on a section of a semiconductor laser diode.
Abstract:
Disclosed are an apparatus for generating/detecting a terahertz wave using graphene and a method for manufacturing the same. The apparatus for generating/detecting a terahertz wave includes a substrate which has an active region and a transmission region, a lower metal layer which is extended in a first direction on the active region and the transmission region of the substrate, a graphene layer which is arranged on the lower metal layer of the active region, and an upper metal layers which are extended in the first direction on the substrate of the transmission region and the graphene layer of the active region. Here, a terahertz wave can be generated or amplified by surface plasmon polaritons which are induced at the boundary surface between the lower metal layer and the graphene layer by a non-tilt laser beam which is applied to the graphene layer and the lower metal layer.
Abstract:
The contactless thickness measurement apparatus according to the present invention comprises; a laser generating device to generate a first laser beam of a first frequency and a second laser beam of a second frequency other than the first frequency; a coupler to couple the generated first and second laser beams; a terahertz wave transmitter to receive the first optical signal outputted from the coupler and to generate terahertz continuous wave by the inputted first optical signal and the imposed bias; an optical delay line to delay the second optical signal outputted from the coupler; and a terahertz wave receiver to receive the terahertz continuous wave having transmitted through the sample and to detect photocurrent by homodyne method using the received terahertz continuous wave and the delayed second optical signal, wherein the thickness of the sample is a value corresponding to the photocurrent.
Abstract:
Disclosed in the present invention are a photo detector and an optical device including the same. The device includes: first and second lasers which generate first and second laser beams; an optical waveguide which is connected to the first and second lasers; and a photo detector which detects the first and second laser beams transmitted through the optical waveguide, wherein the photo detector includes: a substrate; a first impurity layer on the substrate; an absorption layer on the first impurity layer; and a second impurity layer on the absorption layer. The absorption layer generates terahertz waves by the beating of the first and second laser beams and is able to have a thickness less than 0.2 micrometer. [Reference numerals] (12) First laser;(14) Second laser;(30) Photodetector;(50) Output circuit
Abstract:
본 발명은 고효율 반도체 발광 소자에 관한 것으로, 본 발명에 따른 반도체 발광 소자는 하부전극, 발광층 및 상부전극을 포함하는 반도체 발광 소자에 있어서, 상기 발광층은 실리콘 나노 결정을 포함하고, 상기 발광층 상부에 서로 다른 밴드 갭을 갖는 박막을 교대로 성장시킨 다층 구조의 도핑층을 포함한다. 이와 같은 서로 다른 밴드갭을 갖는 박막을 교대로 성장시킨 다층 구조의 도핑층을 발광층 상부에 포함시킴에 따라서, 발광층으로의 캐리어 주입효율을 증가시켜 궁극적으로 발광 효율을 증가시킨다. 발광, 소자, 효율, 밴드갭