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公开(公告)号：KR1020050066062A
公开(公告)日：2005-06-30
申请号：KR1020030097264
申请日：2003-12-26
Applicant: 한국전자통신연구원
IPC: H01L29/737
Abstract: 본 발명은 자기정렬된 에미터/베이스 구조를 가지는 실리콘-게르마늄(SiGe) 이종접합 바이폴라 트랜지스터의 제조 방법에 관한 것이다. 베이스 상부에 고농도의 이온이 도핑된 다결정 혹은 비정질 실리콘막으로 익스트린식 베이스 역할을 하는 베이스 전극을 형성한다. 다결정 혹은 비정질 실리콘막은 증착시 두께 조절이 용이하여 익스트린식 베이스의 저항값을 충분히 감소시킬 수 있다. 익스트린식 베이스의 두께는 인트린식 베이스의 두께에 영향을 미치지 않기 때문에 인트린식 베이스는 얇게 형성하고, 익스트린식 베이스는 두껍게 형성하여 소자의 전기적 특성을 극대화시킬 수 있다.
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公开(公告)号：KR100452331B1
公开(公告)日：2004-10-12
申请号：KR1020020062752
申请日：2002-10-15
Applicant: 한국전자통신연구원
IPC: H01J1/30
Abstract: PURPOSE: An MIM(Metal/Insulator/Metal) emitter of field emission display and a method for manufacturing the same are provided to deposit an etch stopper on a tunneling insulation film of an MIM emitter through a simple process method. CONSTITUTION: A method for manufacturing an MIM(Metal/Insulator/Metal) emitter of field emission display comprises a step of patterning a lower electrode(116) on a substrate(110), a step of forming a tunneling insulation film(120) and a field insulation film(118) on the lower electrode, a step of forming an etch stopper(123) made of a ZnO thin film on the field insulation film and the tunneling insulation film, a step of etching a protection layer(126), a bus electrode(124), and a contact electrode(122) by forming the contact electrode, the bus electrode, and the protecting layer in order, a step of wet-etching the etch stopper, the contact electrode, the bus electrode, and the protecting layer as a mask, and a step of forming an upper electrode(128) on the tunneling insulation film.
Abstract translation: 目的：提供场发射显示器的MIM（金属/绝缘体/金属）发射体及其制造方法，以通过简单的工艺方法在MIM发射体的隧穿绝缘膜上沉积蚀刻停止层。 用于制造场致发射显示器的MIM（金属/绝缘体/金属）发射体的方法包括在衬底（110）上构图下电极（116）的步骤，形成隧穿绝缘膜（120）的步骤和 在下电极上的场绝缘膜118，在场绝缘膜和隧穿绝缘膜上形成由ZnO薄膜制成的蚀刻阻挡层123的步骤，蚀刻保护层126的步骤， 通过依次形成所述接触电极，所述总线电极和所述保护层，对所述蚀刻阻止层，所述接触电极，所述总线电极和所述总线电极进行湿法蚀刻的步骤，以及总线电极（124）和接触电极（122） 保护层作为掩模，以及在隧穿绝缘膜上形成上电极（128）的步骤。
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公开(公告)号：KR102198639B1
公开(公告)日：2021-01-06
申请号：KR1020160167031
申请日：2016-12-08
Applicant: 한국전자통신연구원 , 단국대학교 산학협력단
IPC: H01L27/02
Abstract: 본발명은정전기방전보호소자및 이를포함하는전자디바이스에관한것이다. 본발명의실시예에따른정전기방전보호소자및 이를포함하는전자디바이스는제1 P웰, 제2 P웰, N웰, N+ 브릿지영역, P+ 브릿지영역, 제1 N+ 영역, 제1 P+ 영역, 제2 N+ 영역, 제2 P+ 영역및 게이트를포함한다. N웰은제1 P웰및 제2 P웰사이에배치된다. N+ 브릿지영역은제2 P웰및 N웰의접합영역에형성된다. P+ 브릿지영역은제1 P웰및 N웰의접합영역에형성된다. 제1 N+ 영역및 제1 P+ 영역은제1 P웰에형성되고, 애노드단자에연결된다. 제2 N+ 영역및 제2 P+ 영역은제2 P웰에형성되고, 캐소드단자에연결된다. 게이트는 N+ 브릿지영역및 제2 N+ 영역사이의제2 P웰상에배치된다. 본발명의실시예에따른정전기방전보호소자는트리거전압을낮추고, 전류구동능력을향상시킨다.
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公开(公告)号：KR1020150116002A
公开(公告)日：2015-10-15
申请号：KR1020140039956
申请日：2014-04-03
Applicant: 한국전자통신연구원
IPC: B29C33/42 , H01L21/027
CPC classification number: B29C33/3842 , B29C45/17 , B29C59/002 , B29C2033/385 , B29L2031/757
Abstract: 본발명은베이스몰드및 몰드의제조방법에관한것으로, 보다구체적으로는기판상에서로이격되어차례로적층된제1막및 제2막을형성하는것; 상기제1막을패터닝하여제1패턴을형성하는것; 상기제1패턴의양 측벽들상에제1스페이서를형성하는것; 상기제1스페이서를식각마스크로상기제2막을식각하여, 제2패턴을형성하는것; 상기제1스페이서를제거하여, 상기기판상에상기제1패턴및 상기제2패턴을포함하는적층구조체를형성하는것; 및상기적층구조체를덮는몰드막을형성하는것을포함하는몰드의제조방법에관한것이다.
Abstract translation: 本发明涉及一种基础模具及其制造方法，更具体地，涉及一种模具的制造方法，其特征在于，包括：形成第一膜和第二膜，所述第一膜和第二膜通过分离而依次层压在基板上 对彼此; 通过图案化第一膜形成第一图案; 在所述第一图案的两个侧壁上形成第一间隔件; 通过蚀刻掩模蚀刻第一间隔物和第二膜来形成第二图案; 通过去除所述第一间隔件在所述基板上形成包括所述第一图案和所述第二图案的层压结构体; 以及形成覆盖层叠结构体的模膜。
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公开(公告)号：KR1020140035787A
公开(公告)日：2014-03-24
申请号：KR1020130002510
申请日：2013-01-09
Applicant: 한국전자통신연구원
IPC: H01L29/86 , H01L29/8605 , H01L29/872
Abstract: According to a power rectifying device in the embodiments of the present invention, a gate electrode, a source region and a body region are commonly connected to a first terminal. A substrate beside the body region is connected to a second terminal. Thereby, a power rectifying device having two terminals is realized. The gate electrode may have a spacer shape. Thereby, the channel depth of the channel region of the trench structure of the power rectifying device can be accurately controlled by controlling the width of the gate electrode.
Abstract translation: 根据本发明的实施方式的功率整流装置，栅电极，源极区域和主体区域共同地连接到第一端子。 身体区域旁边的基板连接到第二端子。 由此，实现具有两个端子的电力整流装置。 栅电极可以具有间隔件形状。 由此，可以通过控制栅电极的宽度来精确地控制功率整流装置的沟槽结构的沟道区域的沟道深度。
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Patent Agency Ranking
公开(公告)号：KR1020130134003A
公开(公告)日：2013-12-10
申请号：KR1020120057197
申请日：2012-05-30
Applicant: 한국전자통신연구원
IPC: G06K19/077
CPC classification number: G06K19/07707 , G06K19/0712 , G06K19/07715
Abstract: Disclosed are a display tag apparatus and a method for high-recognition capable of removing the reduction in tag recognition due to various physical phenomena, capable of preventing damage to a product in which a tag is attached due to a result of the non-recognition of the tag, and capable of reducing time consumption for recognition and confirmation by rapidly classifying the tags by confirming the recognition condition of an RFID tag with a binocular method by attaching the manual RFID tag to a power save type display. According to an embodiment of the present invention, a user is able to rapidly identify the information of the tag with the binocular method by attaching the RFID tag to the display, is able to identify the tag located within the recognition range, and is able to identify the color, symbol, text of the tag with the binocular method.
Abstract translation: 公开了一种用于高识别的显示标签装置和方法，其能够消除由于各种物理现象引起的标签识别的减少，能够防止由于不识别标签而导致标签附着的产品的损坏 标签，并且通过将手动RFID标签附加到省电型显示器，通过用双目镜方法确认RFID标签的识别条件，通过快速分类标签来减少用于识别和确认的时间消耗。 根据本发明的实施例，用户能够通过将RFID标签附加到显示器来以双目方式快速识别标签的信息，能够识别位于识别范围内的标签，并且能够 用双目方法识别标签的颜色，符号，文字。
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57.发明公开
公开(公告)号：KR1020120043462A
公开(公告)日：2012-05-04
申请号：KR1020100104778
申请日：2010-10-26
Applicant: 한국전자통신연구원
CPC classification number: H04B5/0062 , G06K19/0723
Abstract: PURPOSE: An RFID(Radio Frequency Identification) reader, RFID tag, RFID communication method, and system thereof are provided to execute wireless communication through a serial communication protocol without using specific wireless communication protocols. CONSTITUTION: An RFID tag(220) includes tag information. The RFID tag provides interfaces by using a serial communication protocol. An RFID reader(210) reads the tag information by using the serial communication protocol from the RFID tag. The RFID tag includes a tag control module. The tag control module provides the RFID reader and the interfaces by using an I2C(Inter-Integrated Circuit) or an UART(Universal Asynchronous Receiver Transmitter).
Abstract translation: 目的：提供RFID（射频识别）阅读器，RFID标签，RFID通信方法及其系统，以通过串行通信协议执行无线通信，而不使用特定的无线通信协议。 构成：RFID标签（220）包括标签信息。 RFID标签通过使用串行通信协议提供接口。 RFID读取器（210）通过使用来自RFID标签的串行通信协议来读取标签信息。 RFID标签包括标签控制模块。 标签控制模块通过使用I2C（内部集成电路）或UART（通用异步收发器）提供RFID阅读器和接口。
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公开(公告)号：KR1020100063867A
公开(公告)日：2010-06-14
申请号：KR1020080122215
申请日：2008-12-04
Applicant: 한국전자통신연구원
IPC: H01L21/324
CPC classification number: H01L21/67098 , H01L21/67017 , H01L21/67778
Abstract: PURPOSE: A horizontally shaped diffusion furnace is provided to form a gate insulating layer with a superior thin film by uniformly injecting reaction gas in top, down, left and right direction of silicon wafer substrate. CONSTITUTION: A reaction chamber(21) comprises a reacting gas inlet. In the reaction chamber, the thermal diffusion process about the silicon wafer substrate is executed. A heating part heats the inside of the reaction chamber. A loading part(23) loads a plurality of silicon wafer substrates. A carrying part(24) transfers the loading part to the inside of the reaction chamber. A nitrogen gas injecting part(25) injects the nitrogen gas into the inside of the loading part.
Abstract translation: 目的：提供一种水平形状的扩散炉，通过在硅晶片衬底的上，下，左，右方向上均匀注入反应气体，形成具有优良薄膜的栅极绝缘层。 构成：反应室（21）包括反应气体入口。 在反应室中，执行关于硅晶片衬底的热扩散过程。 加热部件加热反应室的内部。 装载部件（23）装载多个硅晶片基板。 承载部件（24）将装载部件转移到反应室的内部。 氮气注入部（25）将氮气注入到装载部的内部。
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公开(公告)号：KR1020100063576A
公开(公告)日：2010-06-11
申请号：KR1020080122150
申请日：2008-12-03
Applicant: 한국전자통신연구원
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/7816 , H01L29/0653 , H01L29/1095 , H01L29/66681
Abstract: PURPOSE: A high voltage LDMOS transistor and a manufacturing method thereof are provided to improve a breakdown voltage without an increase of an on-resistance by including a trench of a multi-wall filled with an oxide film in a drift area. CONSTITUTION: A gate(209) is formed on a substrate. A source(211) and a drain(210) are separately placed on the substrate to the either side with placing the gate in the interval. A drift area is formed between the gate and the drain. A plurality of trenches(213) is arranged to the lateral direction in the drift area. A plurality of trenches is filled with an oxide film. A field oxide film(207) is formed between the gate and the drain on the substrate.
Abstract translation: 目的：提供一种高电压LDMOS晶体管及其制造方法，以通过在漂移区域中包括填充有氧化物膜的多壁的沟槽来提高击穿电压而不增加导通电阻。 构成：在基板上形成栅极（209）。 源极（211）和漏极（210）分别放置在衬底上的任一侧，同时将栅极放置在间隔中。 在栅极和漏极之间形成漂移区域。 多个沟槽（213）沿漂移区域的横向方向布置。 多个沟槽填充有氧化物膜。 在衬底上的栅极和漏极之间形成场氧化膜（207）。
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公开(公告)号：KR1020100063479A
公开(公告)日：2010-06-11
申请号：KR1020080122019
申请日：2008-12-03
Applicant: 한국전자통신연구원
IPC: H01L31/00
CPC classification number: H01L31/102 , H01L31/0224 , H01L31/18
Abstract: PURPOSE: A silicon photomultiplier and a manufacturing method thereof are provided to enhance accuracy about location information with suppressing a cross talk by separating an interval of a micro pixel through trench isolation. CONSTITUTION: An active layer(22) is formed on upper part of a substrate(21). A production and an amplification of current by an input light are included on the active layer. A trench controls a cross talk between contiguous micro pixels by filling in inside with a material including an electrical insulation and a light-reflection function. An anode electrode(28) and a cathode electrode(29) are respectively formed on an upper side of the active layer. An insulating layer(27) is formed on the rest upper side of the active layer in which the anode electrode and cathode electrode are not formed.
Abstract translation: 目的：提供硅光电倍增管及其制造方法，通过沟槽隔离分离微像素的间隔，抑制串扰，提高位置信息的精度。 构成：在衬底（21）的上部形成有源层（22）。 通过输入光产生和放大电流被包括在有源层上。 沟槽通过用包括电绝缘和光反射功能的材料填充内部来控制连续微像素之间的串扰。 阳极电极（28）和阴极电极（29）分别形成在有源层的上侧。 绝缘层（27）形成在不形成阳极电极和阴极的有源层的其余上侧。
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