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公开(公告)号:ITTO20001067A1
公开(公告)日:2002-05-14
申请号:ITTO20001067
申请日:2000-11-14
Applicant: ST MICROELECTRONICS SRL
Inventor: VIGNA BENEDETTO , SASSOLINI SIMONE , ZERBINI SARAH , BALDO LORENZO
IPC: G11B5/596
Abstract: Described herein is a read/write transducer for a hard disk drivewith dual actuation stage, comprising at least one hard disk and at least one suspension carrying the read/write transducer. The read/write transducer comprises a supporting body having a substantially parallelepipedal shape, a read/write head arranged on a front face of the supporting body, and a grating defined on one of the side faces of the supporting body during the process of manufacture of the read/write transducer. The grating enables measurement of the position of the read/write transducer with respect to the corresponding suspension in an optical way using a laser transmitter emitting and directing towards the grating a laser beam, and a laser receiver arranged to intercept the laser beam reflected by the grating and outputting a position signal on the basis of which it is possible to calculate, in a simple way, the position of the read/write transducer with respect to the corresponding suspension.
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公开(公告)号:DE60317513D1
公开(公告)日:2007-12-27
申请号:DE60317513
申请日:2003-09-26
Applicant: ST MICROELECTRONICS SRL
Inventor: ZERBINI SARAH , MERASSI ANGELO , LASALANDRA ERNESTO , VIGNA BENEDETTO
IPC: G01P15/125 , G01P15/08 , G01P15/18 , H04M1/02
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公开(公告)号:DE69934392D1
公开(公告)日:2007-01-25
申请号:DE69934392
申请日:1999-03-22
Applicant: ST MICROELECTRONICS SRL
Inventor: VIGNA BENEDETTO , FERRARI PAOLO
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公开(公告)号:DE69933370D1
公开(公告)日:2006-11-09
申请号:DE69933370
申请日:1999-07-15
Applicant: ST MICROELECTRONICS SRL
Inventor: MASTROMATTEO UBALDO , ZERBINI SARAH , SASSOLINI SIMONE , VIGNA BENEDETTO
IPC: G11B5/55 , G11B5/596 , B81B3/00 , B81B7/00 , B81C1/00 , G11B5/127 , G11B5/56 , G11B21/02 , G11B21/08 , G11B21/10 , G11B21/21 , H01L21/20 , H01L21/304 , H01L25/065 , H01L25/07 , H01L25/18
Abstract: The process for assembling a microactuator (10) on a R/W transducer (6) comprises the steps of: forming a first wafer (11) of semiconductor material comprising a plurality of microactuators (10) including suspended regions (15) and fixed regions (22) separated from each other by first trenches (24); forming a second wafer (25) of semiconductor material comprising blocking regions (27, 27') connecting mobile (29') and fixed (29") intermediate regions separated from each other by second trenches (33a); bonding the two wafers (11, 25) so as to form a composite wafer (39) wherein the suspended regions (15) of the first wafer (11) are connected to the mobile intermediate regions (29') of the second wafer (25), and the fixed regions (22) of the first wafer are connected to the fixed intermediate regions (29") of the second wafer; cutting the composite wafer (39) into a plurality of units (41); fixing the mobile intermediate region (29') of each unit (41) to a respective R/W transducer (6); and removing the blocking regions (27'). The blocking regions (27') are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.
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公开(公告)号:DE69735806D1
公开(公告)日:2006-06-08
申请号:DE69735806
申请日:1997-10-29
Applicant: ST MICROELECTRONICS SRL
Inventor: FERRARI PAOLO , VIGNA BENEDETTO
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公开(公告)号:DE69831237D1
公开(公告)日:2005-09-22
申请号:DE69831237
申请日:1998-09-30
Applicant: ST MICROELECTRONICS SRL
Inventor: VIGNA BENEDETTO
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57.
公开(公告)号:ITTO20040899A1
公开(公告)日:2005-03-23
申请号:ITTO20040899
申请日:2004-12-23
Applicant: ST MICROELECTRONICS SRL
Inventor: FONTANELLA LUCA , LASALANDRA ERNESTO , RIVA CATERINA , VIGNA BENEDETTO
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公开(公告)号:DE69828960D1
公开(公告)日:2005-03-17
申请号:DE69828960
申请日:1998-07-22
Applicant: ST MICROELECTRONICS SRL
Inventor: MURARI BRUNO , VIGNA BENEDETTO , FERRARI PAOLO
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公开(公告)号:DE69626972T2
公开(公告)日:2004-01-08
申请号:DE69626972
申请日:1996-07-31
Applicant: ST MICROELECTRONICS SRL
Inventor: FERRARI PAOLO , FORONI MARIO , VIGNA BENEDETTO , VILLA FLAVIO
Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer (4) forming part of a dedicated SOI substrate (50) presenting a first (1) and second (4) monocrystalline silicon wafer separated by an insulating layer (2) having an air gap (3). A well (15) is formed in the second wafer (4), over the air gap (3), and is subsequently trenched up to the air gap to release the monocrystalline silicon mass (23) forming the movable mass (24) of the sensor; the movable mass (24) has two numbers of movable electrodes (28a, 28b) facing respective pluralities of fixed electrodes (29a, 29b). In the idle condition, each movable electrode (28) is separated by different distances from the two fixed electrodes (29) facing the movable electrode.
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公开(公告)号:DE69717094T2
公开(公告)日:2003-08-21
申请号:DE69717094
申请日:1997-07-18
Applicant: ST MICROELECTRONICS SRL
Inventor: MURARI BRUNO , VIGNA BENEDETTO , FERRARI PAOLO
IPC: G11B5/127 , G11B5/265 , G11B5/29 , G11B5/31 , G11B5/39 , G11B5/48 , G11B5/55 , G11B5/33 , G11B5/596
Abstract: A head (130) for a disk storage device having a plurality of tracks (117) divided into memory cells (234) comprises means (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) in succession, the means (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) including at least two partial reading means (206a, 230a, 250a; 206b, 230b, 250b) each for reading a portion (234a; 234b) of each memory cell (234), the portions (234a; 234b) being arranged transversely relative to the longitudinal axis (233) of the corresponding track (117).
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