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    Manufacturing method of oscillatory transducer
    55.
    发明专利
    Manufacturing method of oscillatory transducer 有权
    振荡传感器的制造方法

    公开(公告)号：JP2013117419A

    公开(公告)日：2013-06-13

    申请号：JP2011264543

    申请日：2011-12-02

    Applicant: Yokogawa Electric Corp ,  横河電機株式会社

    Inventor： NODA RYUICHIRO ,  YOSHIDA TAKASHI

    IPC: G01L9/00 ,  H01L29/84

    CPC classification number: H04R31/00 ,  B81B2201/0271 ,  B81C1/0015 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0173 ,  H03H3/0072 ,  Y10T29/49005

    Abstract: PROBLEM TO BE SOLVED: To form an oscillation beam having high tension for a thick oscillation beam.SOLUTION: A manufacturing method of an oscillatory transducer includes a counter clearance forming step (1) for forming a counter clearance through etching in a silicon layer on one side of an SOI substrate, an impurity diffusion source layer forming step (2) of forming an impurity diffusion source layer which imparts stress of tension to an oscillation beam on the one side of the SOI substrate and a surface of the counter clearance, an impurity diffusion layer forming step (3) of forming an impurity diffusion layer by diffusing impurities of the impurity diffusion source layer over a silicon layer on the one side through heat treatment, and an oscillation beam etching forming step (4) of forming the oscillation beam by performing etching on the impurity diffusion source layer and a silicon oxide of the SOI substrate in the same process or performing etching on the impurity diffusion source layer and the silicon oxide of the SOI substrate successively in other processes.

    Abstract translation: 要解决的问题：为了形成用于厚振荡光束的高张力的振荡光束。 解决方案：振荡换能器的制造方法包括：反间隙形成步骤（1），用于通过在SOI衬底的一侧上的硅层中蚀刻形成反间隙，杂质扩散源层形成步骤（2） 形成杂质扩散源层，其向SOI衬底的一侧上的振荡光束和反间隙的表面施加张力的应力;杂质扩散层形成步骤（3），通过扩散杂质形成杂质扩散层 通过热处理在一侧的硅层上形成杂质扩散源层，以及通过对杂质扩散源层进行蚀刻和SOI衬底的氧化硅形成振荡光束的振荡光束蚀刻形成步骤（4） 在相同的工艺中或在其它工艺中连续地对SOI衬底的杂质扩散源层和氧化硅进行蚀刻。 版权所有（C）2013，JPO＆INPIT

    Tensile-stressed microelectromechanical apparatus and micromirrors formed therefrom
    56.
    发明授权
    Tensile-stressed microelectromechanical apparatus and micromirrors formed therefrom 有权
    拉伸应力微机电装置和由其形成的微型反射镜

    公开(公告)号：US07046411B1

    公开(公告)日：2006-05-16

    申请号：US11118573

    申请日：2005-04-29

    Applicant: James G. Fleming

    Inventor： James G. Fleming

    IPC: H01H51/22 ,  G02B26/08

    CPC classification number: B81B3/0032 ,  B81B2201/045 ,  B81B2203/053 ,  B81C2201/0164 ,  B81C2201/0167 ,  G02B26/0841 ,  Y10S359/904

    Abstract: A microelectromechanical (MEM) apparatus is disclosed which includes one or more tensile-stressed actuators that are coupled through flexures to a stage on a substrate. The tensile-stressed actuators, which can be formed from tensile-stressed tungsten or silicon nitride, initially raise the stage above the substrate without any applied electrical voltage, and can then be used to control the height or tilt angle of the stage. An electrostatic actuator can also be used in combination with each tensile-stressed actuator. The MEM apparatus has applications for forming piston micromirrors or tiltable micromirrors and independently addressable arrays of such devices.

    Abstract translation: 公开了一种微机电（MEM）装置，其包括一个或多个拉伸应力致动器，其通过挠曲件耦合到基板上的台。 可以由拉应力钨或氮化硅形成的拉伸应力致动器最初将基底升高到基板上方，而没有任何施加的电压，然后可用于控制载物台的高度或倾斜角度。 静电致动器也可以与每个拉伸应力致动器组合使用。 MEM装置具有用于形成活塞微镜或可倾斜的微反射镜以及这种装置的独立可寻址阵列的应用。

    Method to fabricate a highly perforated silicon diaphragm with controlable thickness and low stress
    58.
    发明申请
    Method to fabricate a highly perforated silicon diaphragm with controlable thickness and low stress 审中-公开
    制造具有可控厚度和低应力的高度穿孔的硅膜片的方法

    公开(公告)号：US20040253760A1

    公开(公告)日：2004-12-16

    申请号：US10462310

    申请日：2003-06-13

    Applicant: Agency For Science, Technology And Research

    Inventor： Qingxin Zhang ,  Zhe Wang

    IPC: H01L021/00

    CPC classification number: B81C1/00666 ,  B81B2201/0257 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81C2201/0164 ,  H04R31/003

    Abstract: A method of fabricating a highly perforated silicon diaphragm is described. A single crystal silicon substrate of a first conductivity type is provided. First ions of a second conductivity type opposite the first conductivity type are implanted into the single crystal silicon substrate to form an etch stop layer. Second ions of the first conductivity type are selectively implanted into the single crystal silicon substrate to form a pattern of holes in a portion of the substrate. Third ions of the first conductivity type are implanted overlying the pattern of holes and forming a first ohmic contact region. Fourth ions of the second conductivity type are implanted into the substrate not surrounding the pattern of holes to form a second ohmic contact region. A nitride layer is deposited on a frontside and a backside of the silicon substrate. Contacts are formed through the nitride layer to the first and second ohmic contact regions. Thereafter, the backside nitride layer is patterned and from the backside, the silicon substrate not covered by the nitride layer is etched away to the etch stop layer and, simultaneously, the pattern of holes is selectively etched away to complete formation of a perforated diaphragm.

    Abstract translation: 描述了制造高度穿孔的硅膜的方法。 提供了第一导电类型的单晶硅衬底。 与第一导电类型相反的第二导电类型的第一离子注入到单晶硅衬底中以形成蚀刻停止层。 第一导电类型的第二离子被选择性地注入到单晶硅衬底中以在衬底的一部分中形成孔的图案。 将第一导电类型的第三离子注入覆盖孔的图案并形成第一欧姆接触区域。 将第二导电类型的第四离子注入到不围绕孔图案的衬底中以形成第二欧姆接触区域。 氮化物层沉积在硅衬底的前侧和背面。 触头通过氮化物层形成到第一和第二欧姆接触区域。 此后，将背面氮化物层图案化，并且从背面，未被氮化物层覆盖的硅衬底被蚀刻掉到蚀刻停止层，并且同时，孔的图案被选择性地蚀刻掉以完成多孔隔膜的形成。

    Fabrication of advanced silicon-based MEMS devices
    59.
    发明申请
    Fabrication of advanced silicon-based MEMS devices 审中-公开
    先进的硅基MEMS器件的制造

    公开(公告)号：US20040157426A1

    公开(公告)日：2004-08-12

    申请号：US10410158

    申请日：2003-04-10

    Inventor： Luc Ouellet ,  Robert Antaki

    IPC: H01L021/8242

    CPC classification number: B81C1/00246 ,  B81C1/00666 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0169 ,  B81C2203/0735

    Abstract: A micro-electro-mechanical (MEM) device and an electronic device are fabricated on a common substrate by fabricating the electronic device comprising a plurality of electronic components on the common substrate, depositing a thermally stable interconnect layer on the electronic device, encapsulating the interconnected electronic device with a protective layer, forming a sacrificial layer over the protective layer, opening holes in the sacrificial layer and the protective layer to allow the connection of the MEM device to the electronic device, fabricating the MEM device by depositing and patterning at least one layer of amorphous silicon, and removing at least a portion of the sacrificial layer. In this way, the MEM device can be fabricated after the electronic device on the same substrate.

    Abstract translation: 通过在公共衬底上制造包括多个电子部件的电子器件，在公共衬底上制造微电子机械（MEM）器件和电子器件，在电子器件上沉积热稳定的互连层，封装互连 具有保护层的电子器件，在保护层上形成牺牲层，牺牲层中的开孔和保护层，以允许MEM器件与电子器件的连接，通过沉积和图案化制造MEM器件至少一个 非晶硅层，并且去除牺牲层的至少一部分。 以这种方式，MEM装置可以在同一基板上的电子装置之后制造。

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