公开(公告)号：JPH07202911A

公开(公告)日：1995-08-04

申请号：JP29152994

申请日：1994-11-25

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： KIMU MIYON SEKI ,  SON SEKI CHIYON ,  GAN TE UN ,  CHIYOI MUN GI

IPC: H04M3/36 ,  H04L12/70 ,  H04L12/801 ,  H04L12/911 ,  H04Q3/00 ,  H04Q11/04 ,  H04L12/28

Abstract: PURPOSE: To attain real time statistic processing for traffic by storing already processed traffic information in a memory by using a simple circuit and periodically processing the stored information by a traffic processing part. CONSTITUTION: When an address information of measured data inputted from an application processing part 57 is the same as the information of a received cell header, a measured traffic extraction part 5 generates a cell arrival signal. A traffic information processing part 61 maps the time information and number information of traffic in the address and data information of the memory, by mapping cell arrival time information in the memory address information and increasing data information in the corresponding address. A traffic statistic processing part 62 periodically reads out the processed information and finds out various statistic data. A traffic display part 63 displays various traffic characteristic data required on a monitor by using graphics or the like while interfacing with a user.

公开(公告)号：JPH07202848A

公开(公告)日：1995-08-04

申请号：JP29152594

申请日：1994-11-25

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： CHIYU GAN OKU ,  KIMU BOYON FUN ,  SHIN SO YON ,  KIMU GI HON ,  ON YON HOYOBU

IPC: H04Q11/00 ,  H04J3/00 ,  H04J14/00 ,  H04J14/02 ,  H04J14/08

Abstract: PURPOSE: To simultaneously compress and decompress an optical signal by an optical method of simple construction. CONSTITUTION: An optical signal is duplicated by a certain rule through (M+1) cascade connected 2×2 optical splitting/combining parts 102, 104, 105, 107 capable of simultaneously executing optical splitting and optical combination in both directions and M optical delay parts 103, 106. Optical isolation parts 101, 104 connected to respective one-ends of the optical splitting/combining parts arranged on both ends, and optical switching parts 108, 110 and control parts 111, 112 connected to the other ends of the optical splitting/combining parts on both ends are symmetrically arranged to pass an optical signal based on a certain rule. Thereby optical signals can be simultaneously compressed and decompressed in each N(=2M) unit. Consequently packaging or the like can easily be executed, the number of control means can be reduced and the stability of the system can be improved.

公开(公告)号：JPH07202533A

公开(公告)日：1995-08-04

申请号：JP28096994

申请日：1994-11-15

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： KIYOU KOUYON ,  RI SOURETSU ,  IN TETSUSHIYOKU

IPC: H01P1/203 ,  H01P11/00

Abstract: PURPOSE: To provide a manufacture of a passive element for information communication, especially a band pass filter with an excellent performance in a high frequency area. CONSTITUTION: An epitaxial thin film 5 of an oxide high temperature superconducting body is formed. A band pass filter with YBCO/MgO/Cu/Au or a YBCO/LaA103/Cr/Cu/Au structure for high frequency is manufactured by applying a photo lithographic process and a mixed etching process to the thin film 5. As a result, precision and sharpness of a circuit pattern formed on a substrate is much improved.

公开(公告)号：JPH07201889A

公开(公告)日：1995-08-04

申请号：JP30654394

申请日：1994-12-09

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： YOU TENKIYOKU ,  GO OUKI ,  IN KIYOUSHIYOU ,  RI SHINKI ,  BOKU TETSUJIYUN ,  BOKU KIYOUMO

IPC: H01L29/43 ,  H01L21/30 ,  H01L21/338 ,  H01L29/423 ,  H01L29/49 ,  H01L29/812

Abstract: PURPOSE: To simplify the forming process of a fine pattern and a T-shape gate by doubly exposing a photoresist film through the use of an optical stepper, making it the photoresist film of a lower layer, forming the photoresist film of an upper layer on it and applying a metallic film on it. CONSTITUTION: A photoresist film 20 is applied on the semi-insulating GaAs substrate 10. A photomask 30 having an opaque region 31 is arranged on it and the region of a gate is exposed by the exposure of ultraviolet rays. When the region is exposed again in a state in which the photomask is moved for a prescribed distance, the regions which are not exposed are again classified as a region 22 which is not exposed and regions 23 which have been exposed once, and the region except for the regions is the region that has been exposed twice. Thus, a pattern which is finer than the resolution of the applied stepper can be formed in the formation of the fire form, and the form of the T-shape gate can efficiently be formed.

公开(公告)号：JPH07193583A

公开(公告)日：1995-07-28

申请号：JP27155094

申请日：1994-11-04

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： SON SUN ON

IPC: H04Q3/00 ,  H04J3/24 ,  H04L12/801 ,  H04L12/865 ,  H04L12/911 ,  H04L12/951 ,  H04Q11/04 ,  H04L12/28

Abstract: PURPOSE: To efficiently and fairly offer resources which a network has. CONSTITUTION: An input buffering means 1 where input cells are temporarily stored, a cell discrimination means 2 which classifies input cells by QOS classes, a QOS class buffering means 3 where cells are stored by classes, a scheduling control means 5 which controls the scheduling sequence, a scheduling means 4 which outputs cells to the outside in accordance with the scheduling sequence, and a connection state management means 6 which connects a network operator and an ATM multiplexing processor are provided, and this method can be applied to implementation of a transmission equipment requiring statistical cell multiplexing and is effectively used in a broad band integrated services digital network requiring a high speed.

公开(公告)号：JPH0738118A

公开(公告)日：1995-02-07

申请号：JP32429293

申请日：1993-12-22

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： SOU JIYUNKOU ,  HAKU TANEYASU ,  MINAMI MOTOMORI

IPC: H01L21/20 ,  H01L21/265 ,  H01L21/336 ,  H01L29/78 ,  H01L29/786

Abstract: PURPOSE: To form a good polycrystalline Si film on a substrate by creating crystal nuclei in an amorphous Si film on the substrate at specified high temp. or more and separating a step of growing crystal grains at a specified low temp. or less to crystallize it. CONSTITUTION: On a wafer 31 having a silicon oxide film 32 an amorphous Si film 33 is formed and heat-treated at 600 deg.C or more for a short time to create crystal nuclei of adequate density and size in a quickly heat-treating chamber, crystal grains already created in an electric furnace are grown at 600 deg.C or less to form a good polycrystalline Si. When the crystal grain growth is made at 600 deg.C or lower, because the temp. dependence of the crystal nucleus creating is higher than that of the crystal grain growth, new crystal nucleus generation is fully suppressed to form a good polycrystal Si film 33 uniform in the crystal grain.

公开(公告)号：JPH06232971A

公开(公告)日：1994-08-19

申请号：JP31383493

申请日：1993-12-14

Applicant: KOREA ELECTRONICS TELECOMM ,  KOREA TELECOMMUNICATION

Inventor： HON SON MI ,  KIMU TE IRU ,  I YON HO ,  I CHIYUN KUN ,  CHIE GO BON ,  KIMU YON SHI ,  KIMU YON BOMU ,  KIMU CHIYON SUU

IPC: H04M3/42 ,  H04M15/00 ,  H04Q1/453 ,  H04Q3/00

Abstract: PURPOSE: To obtain intelligent network service such as credit communication service by adding a function part which processes a DTMF signal system capable of direct communication with a subscriber to a repeating exchange. CONSTITUTION: When digits from an exchange are a credit communication service call as an intelligent network service call, the origination number and origination class are gathered from the exchange and then an R2MFC transmitter receiver 4 is reset. Then a channel to the exchange is formed and an existing subscriber signal system (DTMF) is placed in operation to send out a guidance broadcast prompting secret number input from a guidance broadcast sending-out device 10. Then the device 10 and a DTMF reception device 6 are reset once a secret number is gathered to carry on the service. Consequently, the intelligent network service which should receive information from a subscribed during the service like the credit communication service can be provided.

公开(公告)号：JPH0579980B2

公开(公告)日：1993-11-05

申请号：JP7367289

申请日：1989-03-24

Applicant: KOREA ELECTRONICS TELECOMM ,  KANKOKU DENKI TSUSHIN KOSHA

Inventor： CHOE SANSU

IPC: G03F7/26 ,  G03F7/09 ,  G03F7/40 ,  H01L21/027 ,  H01L21/205 ,  H01L21/3105 ,  H01L21/311

公开(公告)号：JPH0572133B2

公开(公告)日：1993-10-08

申请号：JP31400088

申请日：1988-12-14

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： BAKU HYONGUMU ,  KI HYONCHORU

IPC: H03K17/00 ,  G06F3/00 ,  H04J3/04

公开(公告)号：JPH05211171A

公开(公告)日：1993-08-20

申请号：JP4696691

申请日：1991-03-12

Applicant: KOREA ELECTRONICS TELECOMM

Inventor： JIE SHIN RI ,  CHIYORU SUN BOKU ,  DOOJIN KIN ,  JIN YON KAN

IPC: H01L29/812 ,  H01L21/338 ,  H03K17/08

Abstract: PURPOSE: To prevent ion damages in steps for forming a high-melting-point gate and performing dry etching operation. CONSTITUTION: An n-type impurity implantation layer 11a is formed on a GaAs substrate 11, a photoresist film 13 having overhangs 13a are formed thereon, a first high-melting-point material and a second metallic material 15a are sequentially deposited thereon, a gate of a two-layer structure having a first high- melting-point gate 14 and a second metallic gate 15 is defined by a lift-off method, a source/drain region 11b is formed, and then an ohmic contact 17 is formed on the source/drain region 11b.