中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

93 records (took 0.033 seconds)

    THERMOLABILE VORLÄUFER-VERBINDUNGEN ZUR VERBESSERUNG DER INTERPARTIKULÄREN KONTAKTSTELLEN UND ZUM AUFFÜLLEN DER ZWISCHENRÄUME IN HALBLEITENDEN METALLOXIDPARTIKELSCHICHTEN
    61.
    发明公开
    THERMOLABILE VORLÄUFER-VERBINDUNGEN ZUR VERBESSERUNG DER INTERPARTIKULÄREN KONTAKTSTELLEN UND ZUM AUFFÜLLEN DER ZWISCHENRÄUME IN HALBLEITENDEN METALLOXIDPARTIKELSCHICHTEN 审中-公开
    不耐热的前体化合物用于改善间的联络点和填充房间之间的一半官员METALLOXIDPARTIKELSCHICHTEN

    公开(公告)号：EP2443650A1

    公开(公告)日：2012-04-25

    申请号：EP10725447.6

    申请日：2010-06-15

    Applicant: BASF SE

    Inventor： FLEISCHHAKER, Friederike ,  DOMKE, Imme ,  KARPOV, Andrey ,  KASTLER, Marcel ,  WLOKA, Veronika ,  WEBER, Lothar

    IPC: H01L21/02 ,  H01L21/368

    CPC classification number: H01L21/02422 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02601 ,  H01L21/02628

    Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the following steps: (A) a porous layer comprising at least one semiconductive metal oxide is applied to a substrate, (B) the porous layer from step (A) is treated with a solution containing at least one precursor compound of the semiconductive metal oxide, so that the pores of the porous layer are at least partially filled with this solution, and (C) the layer obtained in step (B) is heat-treated in order to convert at least one precursor compound of the semiconductive metal oxide into the semiconductive metal oxide, wherein the at least one precursor compound of the at least one semiconductive metal oxide is selected in step (B) from the group comprising carboxylates of monocarboxylic acids, dicarboxylic acids or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic acids, dicarboxylic acids or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidines, amidrazones, urea derivatives, hydroxylamines, oximes, oximates, urethanes, ammonia, amines, phosphines, ammonium compounds, nitrates, nitrides or azides of the relevant metal and mixtures thereof.

    MODIFIZIERTE ZINKOXID-TEILCHEN
    62.
    发明公开
    MODIFIZIERTE ZINKOXID-TEILCHEN 有权
    改性的氧化锌粒子

    公开(公告)号：EP2313345A1

    公开(公告)日：2011-04-27

    申请号：EP09780531.1

    申请日：2009-07-14

    Applicant: BASF SE

    Inventor： KARPOV, Andrey ,  HIBST, Hartmut ,  SCHAMBONY, Simon ,  RIGGS, Richard ,  HAREMZA, Sylke

    IPC: C01G9/02 ,  C09C1/04

    CPC classification number: C09C1/043 ,  C01G9/02 ,  C01P2002/84

    Abstract: The invention relates to a method for producing modified ZnO particles in which a zinc salt and a base are mixed in a polar solvent and the polar solvent is optionally removed after precipitation of a precipitation product, resulting in a residue, wherein the residue is absorbed in a non-polar solvent, surface active substances are added, other active substances are optionally added and then the modified ZnO particles are separated from other byproducts. The invention also relates to materials such as plastics, varnishes or paints containing modified ZnO particles. The invention also relates to a method for incorporating modified ZnO particles into materials, wherein the modified ZnO particles are incorporated into the materials in the form of dispersions or suspensions, and to the use of modified ZnO particles for protecting materials against the effects of light, heat, oxygen or radicals, as catalysts, for semiconducting layers or for cosmetic uses.

    VERFAHREN ZUR HERSTELLUNG VON HALBLEITENDEN SCHICHTEN
    68.
    发明公开
    VERFAHREN ZUR HERSTELLUNG VON HALBLEITENDEN SCHICHTEN 审中-公开
    用于生产半导体层

    公开(公告)号：EP2425038A2

    公开(公告)日：2012-03-07

    申请号：EP10715825.5

    申请日：2010-04-26

    Applicant: BASF SE

    Inventor： KARPOV, Andrey ,  FLEISCHHAKER, Friederike ,  DOMKE, Imme ,  KASTLER, Marcel ,  WLOKA, Veronika ,  WEBER, Lothar

    IPC: C23C18/12 ,  H01L21/288

    CPC classification number: C23C18/1216 ,  C23C18/1245 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02628 ,  H01L27/1292 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

    Abstract: The present invention relates to a method for producing a layer containing at least one semiconductive metal oxide on a substrate, comprising at least the steps of: (A) producing a solution containing at least one precursor compound of the at least one metal oxide selected from the group of carboxylates from monocarboxylic, dicarbonic, or polycarboxylic acids with at least three carbon atoms or derivatives of monocarboxylic, dicarbonic, or polycarboxylic acids, alcoholates, hydroxides, semicarbazides, carbamates, hydroxamates, isocyanates, amidins, amidrazones, carbamide derivatives, hydroxylamines, oximes, urethanes, ammonia, amines, phosphines, ammonium compounds, azides of the corresponding metal and compounds thereof, in at least one solvent; (B) application of the solvent of step (A) on the substrate; and (C) thermal treatment of the substrate of step (B) at a temperature of 20 to 200 degrees Celsius, in order to transfer the at least one precursor compound in at least one semiconductive metal oxide. In the event that in step (A), electrically neutral [(OH)
    x (NH
    3 )
    y Zn]
    z with x, y, and z independently from one another 0.01 to 10, is used as precursor compound, said precursor compound is obtained by conversion of zinc oxide or zinc hydroxide with ammonia; a substrate, which is coated with at least one semiconductive metal oxide, obtainable by said method; the application of said substrate in electronic components; and a method for producing electronically neutral [(OH)
    x (NH
    3 )
    y Zn]
    z with x, y, and z independently from one another 0.01 to 10, by conversion of zinc oxide and/or zinc hydroxide with ammonia.

Patent Agency Ranking