公开(公告)号：US20200266177A1

公开(公告)日：2020-08-20

申请号：US16866278

申请日：2020-05-04

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Hsin-Mao LIU ,  Ying-Yang SU

IPC: H01L25/075 ,  H01L27/146 ,  G01R31/26 ,  H01L33/50 ,  H01L23/00

Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

公开(公告)号：US20200227591A1

公开(公告)日：2020-07-16

申请号：US16828462

申请日：2020-03-24

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Tzer-Perng CHEN ,  Jen-Chau WU ,  Yuh-Ren SHIEH ,  Chuan-Cheng TU

IPC: H01L33/22 ,  H01L33/00 ,  H01L23/00

Abstract: The present disclosure provides a light-emitting apparatus comprising a board having a plurality of first metal contacts and a plurality of second metal contacts on a top surface; a plurality of LEDs being bonded to the board, the each of the LEDs comprising a first cladding layer on the substrate, an active layer on the first cladding layer, a second cladding layer on the active layer, an upper surface on the second cladding layer, a first metal layer, and a second metal layer, wherein the first metal layer and the second metal layer are between the active layer and the board; an opaque layer between the adjacent LEDs and comprising a polymer mixed with a plurality of inorganic particles; and an encapsulating layer on the upper surfaces and opposite to the board, wherein the encapsulating layer does not cover a side wall of the active layer; and an underfill material between the board and the plurality of LEDs, wherein the underfill material surrounds each of the first metal layer and the second metal layer.

公开(公告)号：US20190252586A1

公开(公告)日：2019-08-15

申请号：US16274666

申请日：2019-02-13

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Tzu-Hsiang WANG

IPC: H01L33/62 ,  H01L33/60 ,  H01L33/50 ,  H01L25/16

Abstract: The invention discloses a light-emitting device and a manufacturing method thereof. The light-emitting device comprising: a light-emitting unit, the light-emitting unit comprises a non-light-emitting element and a light-emitting diode; a reflective layer covering the non-light-emitting element; a light-transmitting layer covering the reflective layer and the light-emitting diode; a metal connection layer electrically connecting the non-light-emitting element and the light-emitting diode.

公开(公告)号：US20180159004A1

公开(公告)日：2018-06-07

申请号：US15827549

申请日：2017-11-30

Applicant: EPISTAR CORPORATION

Inventor： Lung-Kuan LAI ,  Ching-Tai CHENG ,  Yih-Hua RENN ,  Min-Hsun HSIEH ,  Chun-Hung LIU ,  Shih-An LIAO ,  Ming-Chi HSU ,  Yu Chen LIAO

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/46 ,  H01L33/38 ,  H01L33/50 ,  H01L33/54 ,  H01L25/075 ,  F21V8/00

CPC classification number: H01L33/60 ,  G02B6/0051 ,  G02B6/0073 ,  H01L25/0753 ,  H01L33/385 ,  H01L33/46 ,  H01L33/505 ,  H01L33/507 ,  H01L33/54 ,  H01L33/62 ,  H01L2224/18 ,  H01L2933/0016 ,  H01L2933/0025 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: A light-emitting device includes a light body having an internal electrode layer, and a conductive layer. The conductive layer has a first portion formed on the internal electrode layer and overlapping the light body in a first direction, and a second portion overlapping the light body in a second direction. The first direction is perpendicular to the second direction.

公开(公告)号：US20170345983A1

公开(公告)日：2017-11-30

申请号：US15165943

申请日：2016-05-26

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Jai-Tai KUO ,  Wei-Kang CHENG

IPC: H01L33/60 ,  H01L33/48 ,  H01L25/075 ,  H01L33/50 ,  H01L33/62

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/486 ,  H01L33/502 ,  H01L33/58 ,  H01L33/62 ,  H01L2933/0091

Abstract: The present application discloses a light-emitting device comprising a light-emitting unit and a flexible carrier supporting the light-emitting unit. The light-emitting unit comprises a LED chip, a first reflective layer on the LED chip and an optical diffusion layer formed between the first reflective layer and the LED chip.

公开(公告)号：US20170294566A1

公开(公告)日：2017-10-12

申请号：US15482422

申请日：2017-04-07

Applicant: EPISTAR CORPORATION

Inventor： Min-Hsun HSIEH ,  Jen-Chieh YU ,  Wei-Fan KE

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/00 ,  H01L23/00 ,  H01L33/50 ,  H01L33/38 ,  H01L33/30

CPC classification number: H01L33/60 ,  H01L24/13 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/30 ,  H01L33/38 ,  H01L33/385 ,  H01L33/40 ,  H01L33/46 ,  H01L33/502 ,  H01L33/505 ,  H01L33/62 ,  H01L2224/13111 ,  H01L2224/1312 ,  H01L2924/12041 ,  H01L2933/0016 ,  H01L2933/0058 ,  H01L2933/0066

Abstract: This disclosure discloses a light-emitting device includes a semiconductor stack, an electrode, an electrode post, a reflective insulating layer, an extending electrode, and a supporting structure. The electrode is disposed on a lower surface of the semiconductor stack, and electrically connected to the semiconductor stack. The electrode post is disposed on the electrode. The reflective insulating layer surrounds the electrode post, and has a bottom surface which is coplanar with the electrode post. The extending electrode is disposed on an upper surface of the semiconductor stack. The supporting structure is located on the extending electrode.

公开(公告)号：US20170271290A1

公开(公告)日：2017-09-21

申请号：US15459310

申请日：2017-03-15

Applicant: EPISTAR CORPORATION

Inventor： Shih-An LIAO ,  Shau-Yi CHEN ,  Ming-Chi HSU ,  Chun-Hung LIU ,  Min-Hsun HSIEH

IPC: H01L23/00 ,  H01L33/64 ,  H01L33/62

CPC classification number: H01L24/16 ,  H01L24/06 ,  H01L24/13 ,  H01L24/20 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L33/30 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/04105 ,  H01L2224/0612 ,  H01L2224/13309 ,  H01L2224/13311 ,  H01L2224/13313 ,  H01L2224/13339 ,  H01L2224/13499 ,  H01L2224/16058 ,  H01L2224/16105 ,  H01L2224/16227 ,  H01L2224/165 ,  H01L2224/2929 ,  H01L2224/29309 ,  H01L2224/29311 ,  H01L2224/29313 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2939 ,  H01L2224/294 ,  H01L2224/29499 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/83121 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83851 ,  H01L2224/83862 ,  H01L2224/8388 ,  H01L2224/83886 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10331 ,  H01L2924/12041 ,  H01L2924/15156 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00012

Abstract: A semiconductor device comprises a semiconductor die, comprising a stacking structure, a first bonding pad, and a second bonding pad on a top surface of the stacking structure, wherein a shortest distance between the first bonding pad and the second bonding pad is less than 150 μm; a carrier comprising a connecting surface; a third bonding pad and a fourth bonding pad on the connecting surface of the carrier; and a conductive connecting layer comprising a current conductive area between the first bonding pad and the third bonding pad and between the second bonding pad and the fourth bonding pad.

公开(公告)号：US20170077371A1

公开(公告)日：2017-03-16

申请号：US15360177

申请日：2016-11-23

Applicant: EPISTAR CORPORATION

Inventor： Chih-Chiang LU ,  Wei-Chih PENG ,  Shiau-Huei SAN ,  Min-Hsun HSIEH

IPC: H01L33/62 ,  H01L33/50 ,  H01L33/60 ,  H01L33/22 ,  H01L33/32 ,  H01L33/28 ,  H01L33/06 ,  H01L33/00 ,  H01L33/56 ,  H01L33/30

CPC classification number: H01L33/62 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/22 ,  H01L33/28 ,  H01L33/30 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/40 ,  H01L33/405 ,  H01L33/44 ,  H01L33/504 ,  H01L33/508 ,  H01L33/56 ,  H01L33/60

Abstract: An optoelectronic semiconductor device comprising: a semiconductor system comprises an upper surface, an interfacial layer comprises a upper interfacial layer on the upper surface of the semiconductor system, and the upper interfacial layer comprises a first wavelength converting material; and a void region in the upper interfacial layer, and a material different from that of the upper interfacial layer fills in the void region.

Abstract translation: 一种光电子半导体器件，包括：半导体系统，包括上表面，界面层包括在所述半导体系统的上表面上的上界面层，所述上界面层包括第一波长转换材料; 和上界面层中的空隙区域，并且与上界面层的材料不同的材料填充在空隙区域中。

公开(公告)号：US20170054056A1

公开(公告)日：2017-02-23

申请号：US15345185

申请日：2016-11-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Ching-San TAO ,  Chen OU ,  Min-Hsun HSIEH ,  Chao-Hsing CHEN

IPC: H01L33/10 ,  H01L33/40 ,  H01L33/38 ,  H01L33/42 ,  H01L33/22

CPC classification number: H01L33/105 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/42

Abstract: A light-emitting device, comprises a light-emitting stacked layer comprising a first conductivity type semiconductor layer; a light-emitting layer formed on the first conductivity type semiconductor layer; and a second conductivity type semiconductor layer formed on the light-emitting layer and comprising a first plurality of cavities; a first dielectric layer formed on a first part of the second conductivity type semiconductor layer; a first transparent conductive oxide layer formed on the first dielectric layer and on a second part of the second conductivity type semiconductor layer, the first transparent conductive oxide layer including a first portion in contact with the first dielectric layer and including a second portion in contact with the upper surface of the second conductivity type semiconductor layer; a first electrode formed on the first portion; and a first reflective metal layer formed between the first transparent conductive oxide layer and the first electrode.

Abstract translation: 一种发光器件，包括：包含第一导电类型半导体层的发光层叠层; 形成在所述第一导电型半导体层上的发光层; 以及形成在所述发光层上并且包括第一多个空腔的第二导电类型半导体层; 形成在所述第二导电型半导体层的第一部分上的第一电介质层; 第一透明导电氧化物层，形成在第一介电层上和第二导电类型半导体层的第二部分上，第一透明导电氧化物层包括与第一电介质层接触的第一部分， 第二导电型半导体层的上表面; 形成在所述第一部分上的第一电极; 以及形成在第一透明导电氧化物层和第一电极之间的第一反射金属层。

公开(公告)号：US20160262228A1

公开(公告)日：2016-09-08

申请号：US15059053

申请日：2016-03-02

Applicant: EPISTAR CORPORATION

Inventor： Chih-Shu HUANG ,  Chang-Hseih WU ,  Min-Hsun HSIEH

IPC: H05B33/08

CPC classification number: H05B33/0809 ,  H02M5/25 ,  H05B33/0803 ,  Y02B20/348

Abstract: A driver includes a semiconductor chip, a bridge rectifier, and a current driver. The semiconductor chip includes a rectifying diode and a constant current source formed thereon. The bridge rectifier includes the rectifying diode. The current driver includes the first constant current source to provide a constant current.

Abstract translation: 驱动器包括半导体芯片，桥式整流器和电流驱动器。 半导体芯片包括形成在其上的整流二极管和恒流源。 桥式整流器包括整流二极管。 当前驱动器包括提供恒定电流的第一恒流源。