公开(公告)号：KR1020110024799A

公开(公告)日：2011-03-09

申请号：KR1020090082943

申请日：2009-09-03

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  정우원 ,  양두환 ,  경도현 ,  권태영 ,  김선용 ,  이용우

IPC: H01L31/04

CPC classification number: Y02E10/50 ,  H01L31/04

Abstract: PURPOSE: A method for selectively forming an emitter of a solar cell and a manufacturing method thereof are provided to use a doping paste as a blocking layer of an etch-back, thereby simplifying a selective emitter structure of a solar cell. CONSTITUTION: High doping(n++) for forming an emitter layer(20) is performed on a silicon substrate(10). A doping paste is coated on a location of the substrate where an electrode is formed. A surface on which the doping paste is partially coated is etched back. The doping paste is removed. The surface of the substrate removing the doping paste is oxidized.

Abstract translation: 目的：提供一种用于选择性地形成太阳能电池的发射极的方法及其制造方法，以使用掺杂膏作为回蚀的阻挡层，从而简化了太阳能电池的选择性发射极结构。 构成：在硅衬底（10）上执行用于形成发射极层（20）的高掺杂（n ++）。 掺杂浆料涂覆在形成电极的基板的位置上。 将掺杂浆料部分地涂覆在其上的表面被回蚀刻。 去除掺杂膏。 去除掺杂浆料的衬底的表面被氧化。

公开(公告)号：KR101018319B1

公开(公告)日：2011-03-04

申请号：KR1020090078324

申请日：2009-08-24

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  김영국 ,  박진주 ,  윤기찬 ,  박승만

IPC: H01L31/04 ,  H01L31/075

CPC classification number: Y02E10/50

Abstract: PURPOSE: A method for manufacturing an organic-inorganic hybrid laminated solar cell is provided to locate a silicon solar cell with a deposited amorphous SiOx film using an N2O gas in front of an organic solar cell, thereby increasing conversion efficiency of the solar cell by adding an inorganic solar cell layer using light of a short wavelength range. CONSTITUTION: An upper transparent electrode layer(210) is formed on a transparent glass substrate(100). A p-type semiconductor layer(220) is formed on the upper transparent electrode layer. An i type semiconductor layer(230) is formed on the p-type semiconductor layer. An n-type semiconductor layer(240) is formed on the i type semiconductor layer. A middle electrode layer(250) is formed on the n-type semiconductor layer. A silicon solar cell layer(200) is formed on the middle electrode layer.

Abstract translation: 目的：提供一种制造有机 - 无机混合层压太阳能电池的方法，以在有机太阳能电池前面使用N2O气体来定位具有沉积的非晶SiO x膜的硅太阳能电池，从而通过加入太阳能电池的转换效率来提高太阳能电池的转换效率 使用短波长范围的光的无机太阳能电池层。 构成：在透明玻璃基板（100）上形成上部透明电极层（210）。 在上部透明电极层上形成p型半导体层（220）。 在p型半导体层上形成i型半导体层（230）。 在i型半导体层上形成n型半导体层（240）。 中间电极层（250）形成在n型半导体层上。 在中间电极层上形成硅太阳能电池层（200）。

公开(公告)号：KR1020100128557A

公开(公告)日：2010-12-08

申请号：KR1020090047021

申请日：2009-05-28

Applicant: 성균관대학교산학협력단

Inventor： 정덕영 ,  이준신 ,  남혜진 ,  정순철 ,  장주연 ,  김영국 ,  한규민

IPC: H01L31/054

CPC classification number: Y02E10/50 ,  H01L31/054

Abstract: PURPOSE: A surface processing method and a solar cell thereof are provided to improve the efficiency of a solar cell by improving the absorption rate of light by reducing a reflection rate. CONSTITUTION: A template(100) for molding a micro lens layer is manufactured. A polymer resin is spread in the template. The template where a polymer resin is spread, is placed on the surface layer(300) of a solar cell. A micro lens layer(200) is formed by hardening and adhering the polymer resin. The template is separated from the micro lens layer.

Abstract translation: 目的：提供一种表面处理方法及其太阳能电池，以通过降低反射率来提高光的吸收率来提高太阳能电池的效率。 构成：制造用于模制微透镜层的模板（100）。 聚合物树脂扩散在模板中。 将聚合物树脂扩散的模板放置在太阳能电池的表面层（300）上。 通过硬化和粘合聚合物树脂来形成微透镜层（200）。 模板与微透镜层分离。

公开(公告)号：KR1020100110164A

公开(公告)日：2010-10-12

申请号：KR1020090028603

申请日：2009-04-02

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  정우원 ,  권태영 ,  문인용 ,  경도현

IPC: H01L31/18 ,  H01L31/04

CPC classification number: Y02E10/50 ,  Y02P70/521 ,  H01L31/18 ,  H01L31/04

Abstract: PURPOSE: A screen printing plate for forming the electrode of a solar cell and a method for forming the electrode of the solar cell using the same are provided to narrow the width of the electrode by preventing the overflow of electrode-paste. CONSTITUTION: A discharging part(210), a shielding part(220), and a partitioning part(230) are prepared. The discharging part corresponds to the shape of a surface electrode, and electrode-paste passes through the discharging part. The shielding part defines the discharging part. The partitioning part is adjacent to the shielding part. Through holes corresponding to the shape of the discharging part are formed inside the partitioning part.

Abstract translation: 目的：提供一种用于形成太阳能电池的电极的丝网印刷板和使用其形成太阳能电池的电极的方法，以通过防止电极浆料的溢出来减小电极的宽度。 构成：制备排出部分（210），屏蔽部分（220）和分隔部分（230）。 放电部分对应于表面电极的形状，电极浆料通过放电部分。 屏蔽部分限定放电部分。 分隔部分与屏蔽部分相邻。 在分隔部内形成有与排出部的形状对应的通孔。

公开(公告)号：KR1020100098138A

公开(公告)日：2010-09-06

申请号：KR1020090017159

申请日：2009-02-27

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  김영국 ,  허종규 ,  최형욱 ,  장경수

IPC: H01L31/072 ,  H01L31/04

CPC classification number: Y02E10/50 ,  H01L31/072 ,  H01L31/04

Abstract: PURPOSE: A hetero-junction silicon solar cell and a method for fabricating the same are provided to improve minority carrier lifetime by using a SiOx film and a SiOxNy film as a passivation film. CONSTITUTION: A crystalline silicon wafer(100) is selected between an n-type or a p-type crystalline silicon. A passivation film(101) is evaporated on both sides of the silicon wafer. A back side field layer(102) generates back surface field. An amorphous silicon layer(103) is formed at front side of the crystalline silicon wafer while having the passivation film between them. A back side reflective electrode film(104) reflects incident light to increase the photonic efficiency.

Abstract translation: 目的：提供异质结硅太阳能电池及其制造方法，以通过使用SiO x膜和SiO x N y膜作为钝化膜来改善少数载流子寿命。 构成：在n型或p型晶体硅之间选择晶体硅晶片（100）。 在硅晶片的两侧蒸发钝化膜（101）。 背面场层（102）产生背面场。 在晶体硅晶片的前侧形成非晶硅层（103），同时在它们之间具有钝化膜。 背面反射电极膜（104）反射入射光以提高光子效率。

公开(公告)号：KR1020090083186A

公开(公告)日：2009-08-03

申请号：KR1020080009195

申请日：2008-01-29

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  정성욱 ,  김재홍 ,  손혁주 ,  조재현

IPC: H01L21/20 ,  H01L21/324

CPC classification number: H01L21/02532 ,  H01L21/0245 ,  H01L21/02592 ,  H01L21/28568 ,  H01L21/324

Abstract: A crystallization method of amorphous silicon thin film is provided to control the diffusion rate of the nickel and the deformation and damage of substrate by crystallizing an amorphous silicon thin film in room temperature. The buffer layer is formed on the substrate(S101). The amorphous silicon thin film is formed on the buffer layer(S102). The assistant thin film is formed in the amorphous silicon thin film(S103). The metal-containing solution is provided on the assistant thin film and metal is coated on the assistant thin film(S104). The substrate in which metal is coated by the thermal process(S105). The metal coating and assistant thin film are removed(S106). The metal solution is the solution containing the nickel. The assistant thin film is the nitride thin film.

Abstract translation: 提供非晶硅薄膜的结晶方法，通过在室温下结晶非晶硅薄膜来控制镍的扩散速率和衬底的变形和损伤。 缓冲层形成在基板上（S101）。 在缓冲层上形成非晶硅薄膜（S102）。 辅助薄膜形成在非晶硅薄膜中（S103）。 在辅助薄膜上设置含金属溶液，在辅助薄膜上涂覆金属（S104）。 通过热处理涂覆金属的基板（S105）。 去除金属涂层和辅助薄膜（S106）。 金属溶液是含有镍的溶液。 辅助薄膜是氮化物薄膜。

公开(公告)号：KR100806846B1

公开(公告)日：2008-02-22

申请号：KR1020070005608

申请日：2007-01-18

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  황성현 ,  정성욱 ,  박형준 ,  이정인

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/02532 ,  H01L21/02628 ,  H01L21/02667

Abstract: A method for crystallizing an amorphous silicon thin film is provided to coat the silicon thin film with metal particles by immersing a substrate with the amorphous silicon thin film into a metal solution. A metal solution containing a catalytic metal is prepared, and then a substrate(101) deposited with an amorphous silicon thin film(103) is coated with the metal solution. Heat treatment is performed on the coated substrate to crystallize the amorphous silicon thin film. The metal solution further contains a solvent material for melting the catalytic material, and an adhesive material for bonding the catalytic material to the substrate. The metal solution comprises (NiCl2)4H2, (Na8C6H5O7)2H2O, NH4Cl, (NaH2PO2)2H2O, ammonia water and deionized water.

Abstract translation: 提供了一种使非晶硅薄膜结晶的方法，通过将具有非晶硅薄膜的衬底浸入金属溶液中，用金属颗粒涂覆硅薄膜。 制备含有催化金属的金属溶液，然后用金属溶液涂覆沉积有非晶硅薄膜（103）的基板（101）。 在涂覆的基材上进行热处理以使非晶硅薄膜结晶。 金属溶液还含有用于熔化催化材料的溶剂材料和用于将催化材料粘合到基材上的粘合剂材料。 金属溶液包含（NiCl2）4H2，（Na8C6H5O7）2H2O，NH4Cl，（NaH2PO2）2H2O，氨水和去离子水。

公开(公告)号：KR100789988B1

公开(公告)日：2008-01-02

申请号：KR1020060049286

申请日：2006-06-01

Applicant: 성균관대학교산학협력단

Inventor： 이준신 ,  정성욱 ,  황성현

IPC: H01L21/3065 ,  H01L21/8247 ,  B82Y40/00

Abstract: RF 플라즈마 반응관 내에 식각가스를 혼합하고 RF 입력파워의 조절을 통하여 플라즈마를 발생시켜 반응성 이온 식각 방법으로 실리콘 기판 표면을 건식 식각하여 10 ~ 30nm의 나노 구조를 형성하고, 형성된 나노 구조를 통하여 플로팅 게이트 메모리의 양자점과의 접촉면을 증가시기 위한 방법이다. 본 발명은, 폴리스타일렌(PS)-
b -폴리메틸메타크릴레이트(PMMA)가 나노 마스트로써 증착된 실리콘 기판의 식각을 위하여 불화유황(SF6) 가스를 주입하고, RF 플라즈마 반응관 내부에 인가되는 RF 전력을 7~10W로 조정함으로서 조정된 플라즈마를 통하여 상기 실리콘 기판을 나노 구조 형태로 건식 식각하는 것이다. 본 발명은 건식 식각 기술을 통하여 폴리스타일렌(PS)-
b -폴리메틸메탈크릴레이트(PMMA)가 나노 마스크로써 증착된 실리콘 기판 표면을 나노 구조의 형태로 만들 수 있으며, 이를 이용하여 기존 차세대 플래시 메모리 중 하나인 부유 게이트 메모리에서 양자점의 밀도를 증가시켜 효율적인 데이터 읽기와 쓰기가 가능하다.