公开(公告)号：KR1020090062601A

公开(公告)日：2009-06-17

申请号：KR1020070129952

申请日：2007-12-13

Applicant: 한국과학기술연구원

Inventor： 구현철 ,  한석희 ,  장준연 ,  김형준 ,  김경호

IPC: H01L27/105 ,  H01L29/82

CPC classification number: H01L29/205 ,  B82Y10/00 ,  H01L29/122 ,  H01L29/66984 ,  Y10S977/933

Abstract: A spin transistor using an epitaxial ferromagnetism-semiconductor junction is provided to reduce the length of a source and a drain by using the epitaxial ferromagnetic source and drain magnetized to a channel direction. A spin transistor includes a semiconductor substrate(110) having a channel layer(107). A ferromagnetism source(121) and a ferromagnetism drain are separately arranged in an upper part of the semiconductor substrate. The ferromagnetism source and drain are epitaxially grown on the semiconductor substrate. The ferromagnetism source and drain are magnetized to the longitudinal direction of the channel layer by the crystallization anisotropy. A gate(150) is arranged between the source and the drain in the upper part of the semiconductor substrate. The gate is insulated from the semiconductor substrate with the SiO2 gate insulating layer. The gate is formed in order to control the spin of the electron passing through the channel layer.

Abstract translation: 提供使用外延铁磁半导体结的自旋晶体管，通过使用被磁化成沟道方向的外延铁磁源和漏极来减小源极和漏极的长度。 自旋晶体管包括具有沟道层（107）的半导体衬底（110）。 铁氧体源（121）和铁磁性漏极分别布置在半导体衬底的上部。 铁氧体源极和漏极在半导体衬底上外延生长。 铁磁源和漏极通过结晶各向异性被磁化到沟道层的纵向方向。 栅极（150）布置在半导体衬底的上部的源极和漏极之间。 栅极与具有SiO 2栅极绝缘层的半导体衬底绝缘。 形成栅极以控制通过沟道层的电子的自旋。

公开(公告)号：KR100697779B1

公开(公告)日：2007-03-20

申请号：KR1020050018421

申请日：2005-03-05

Applicant: 한국과학기술연구원

Inventor： 장준연 ,  한석희 ,  김원용 ,  구현철 ,  이현정

IPC: H01L27/12 ,  H01L27/115

Abstract: 본 발명은 SOI 기판을 이용한 하이브리드형 자성체/반도체 스핀소자 및 그 제조방법에 관한 것으로써, 특히 상온에서 강자성체로부터 스핀분극된 전자를 Si 반도체에 주입하여 얻어지는 스핀밸브 효과로부터 메모리 및 논리소자로 응용이 가능한 스핀주입소자 및 스핀 전계효과 트랜지스터를 제조방법에 관한 것이다.
본 발명에 의하면, 절연막 위에 SOI 기판이 형성되고, 상기 SOI 기판 위에 자성체의 소스 영역이 형성되며, 상기 소스 영역으로 주입된 스핀이 통과하는 상기 SOI 기판 위에 1차원 구조의 스핀 채널영역이 형성되고, 상기 스핀 채널영역을 통과한 스핀이 검출되는 상기 SOI 기판 위에 자성체의 드레인 영역이 형성됨을 특징으로 하는 하이브리드형 자성체/반도체 스핀소자를 제시한다.
따라서, 본 발명은 종래의 자성체/Si 반도체 소자에서 구현되지 않았던 스핀밸브효과를 달성하여 반도체 트랜지스터에서 캐리어의 전하만을 전기장으로 제어하는 것과 달리 하이브리드형 자성체/반도체 소자에서는 소스와 드레인에 자성체를 사용하여 스핀을 SOI 반도체에 주입하고 검출함으로써 캐리어의 스핀을 이용한 메모리 및 논리소자로 응용할 수 있다.
스핀주입소자, SOI, 자성체/반도체 이종 접합구조, 자기저항, 스핀밸브

公开(公告)号：KR100492482B1

公开(公告)日：2005-06-03

申请号：KR1020020053306

申请日：2002-09-04

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이정미 ,  명재민

IPC: H01L43/00 ,  C30B29/38 ,  H01F10/193

CPC classification number: B82Y25/00 ,  B82Y40/00 ,  H01F1/404 ,  H01F10/193 ,  H01F10/3213 ,  H01F41/30 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02543 ,  H01L21/02573 ,  H01L21/02581 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66984 ,  H01L33/40 ,  H01L43/08 ,  H01L43/10

Abstract: A 3 group - 5 group compound ferromagnetic semiconductor, comprising one material 'A' selected from the group of Ga, Al and In and one material 'B' selected from the group consisting of N and P, wherein one material 'C' selected from the group consisting of Mn, Mg, Co, Fe, Ni, Cr and V is doped as a material for substituting the material 'A', the compound semiconductor has a single phase as a whole. The ferromagnetic semiconductor can be fabricated by a plasma-enhance molecular beam epitaxy growing method and since it shows the ferromagnetic characteristics at a room temperature, it can be applied as various spin electron devices.

公开(公告)号：KR1020040081628A

公开(公告)日：2004-09-22

申请号：KR1020030016173

申请日：2003-03-14

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  신경호 ,  한석희 ,  장준연 ,  김희중 ,  김달영 ,  이관희 ,  이경일 ,  전민홍

IPC: G11B5/39

CPC classification number: H01F10/1936 ,  C25D3/54 ,  C25D5/50 ,  G11C11/14 ,  H01F1/401 ,  H01F41/18 ,  H01F41/26 ,  H01L43/12

Abstract: PURPOSE: A Bi thin film fabrication method is provided to fabricate a Bi thin film having a very big magnetoresistance property at room temperature by an electrodeposition method and a sputtering method, thereby being applicable to various spin electron elements. CONSTITUTION: By applying a current having a range of 1-100mA to a Bi solution at room temperature, a Bi thin film is formed on a substrate through an electrodeposition method with a deposition rate of 0.1-10micrometer/min. The fabricated Bi thin film has more than 600% of magnetoresistance ratio at room temperature when a 9T magnetic field is applied. Before depositing the Bi thin film, a Pt or Au under layer is deposited on the substrate with a thickness of 50-500 angstrom.

Abstract translation: 目的：提供Bi薄膜制造方法，通过电沉积法和溅射法在室温下制造具有非常大的磁阻特性的Bi薄膜，从而适用于各种旋转电子元件。 构成：通过在室温下向Bi溶液施加1-100mA范围的电流，通过电沉积法以0.1-10微米/分钟的沉积速率在基板上形成Bi薄膜。 当施加9T磁场时，制造的Bi薄膜在室温下具有超过600％的磁阻比。 在沉积Bi薄膜之前，将Pt或Au下层沉积在衬底上，厚度为50-500埃。

公开(公告)号：KR1020040081625A

公开(公告)日：2004-09-22

申请号：KR1020030016170

申请日：2003-03-14

Applicant: 한국과학기술연구원

Inventor： 이우영 ,  한석희 ,  장준연 ,  김희중 ,  이한주 ,  황웅준 ,  신무환 ,  김영근

IPC: G11C11/15

CPC classification number: H01F10/1936 ,  B82Y25/00 ,  B82Y40/00 ,  H01F10/193 ,  H01F41/308 ,  H01L29/66984

Abstract: PURPOSE: A hybrid magnet/semiconductor spin device and its fabrication method are provided to fabricate a spin injection device and a spin field effect transistor from a spin valve effect obtained by injecting carriers spin-polarized from a ferromagnetic material into a semiconductor. CONSTITUTION: The hybrid magnet/semiconductor spin device includes a semiconductor substrate and a source region(21) of magnetic material formed on the substrate. A spin channel region is formed on the substrate and carriers spin-polarized from the source region are injected into the spin channel region. And a drain region(22) of magnetic material is formed on the substrate and spins passing through the spin channel region are detected in the drain region.

Abstract translation: 目的：提供一种混合磁体/半导体自旋装置及其制造方法，以从通过将从铁磁材料自旋极化的载流子注入半导体而获得的自旋阀效应来制造自旋注入装置和自旋场效应晶体管。 构成：混合磁体/半导体自旋装置包括半导体衬底和形成在衬底上的磁性材料源区（21）。 在衬底上形成自旋沟道区，并将从源极区自旋极化的载流子注入到自旋沟道区。 并且在衬底上形成磁性材料的漏极区域（22），并且在漏极区域中检测到通过自旋沟道区域的自旋。

公开(公告)号：KR1020010009108A

公开(公告)日：2001-02-05

申请号：KR1019990027290

申请日：1999-07-07

Applicant: 한국과학기술연구원

Inventor： 고흥석 ,  유명기 ,  장준연 ,  문인기

IPC: B22F9/08

Abstract: PURPOSE: A method for producing spherical powder is provided to reduce a producing cost with a simple process as well as to have regular particle grading without a charging plate. CONSTITUTION: An alloy with less than 500 deg.C of low melting temperature is molten and inert gas is sprayed to the molten alloy in a linear shape through a nozzle(2). A linear shaped molten alloy(4) is contacted with an organic material(5) to generate a perturbation phenomenon(7) on the surface of the linear shaped molten alloy. Thus, the line of a droplet(8) is created and solidified by surface tension to be spherical powder(9). The alloy with low melting temperature is Pb-Sn, Pb-Ag, Pb-Sn-Bi, Au-Sn, Sn-Sb, Sn-Cu, Sn-Zn, Sn-Ag, In-Ag, Sn-Bi, Sn-In and so on. The diameter of the nozzle is 0.1 to 0.5 mm and the distance between the nozzle and organic liquid is 10 to 300 cm or desirably 10 to 100 cm. The inert gas is Ar or nitrogen and organic liquid is ethanol, glycol, glycerol or polydemethylsiloxane.

Abstract translation: 目的：提供一种制造球形粉末的方法，以简单的方法降低生产成本，并且在没有充电板的情况下具有规则的颗粒分级。 构成：低熔点温度低于500℃的合金是熔融的，惰性气体通过喷嘴（2）以直线状喷射到熔融合金上。 线性熔融合金（4）与有机材料（5）接触以在线状熔融合金的表面上产生扰动现象（7）。 因此，通过表面张力产生并固化液滴（8）的线，以形成球形粉末（9）。 低熔点合金是Pb-Sn，Pb-Ag，Pb-Sn-Bi，Au-Sn，Sn-Sb，Sn-Cu，Sn-Zn，Sn-Ag，In-Ag，Sn-Bi，Sn - 等等。 喷嘴的直径为0.1〜0.5mm，喷嘴与有机液体之间的距离为10〜300cm，优选为10〜100cm。 惰性气体为Ar或氮气，有机液体为乙醇，乙二醇，甘油或聚二甲基硅氧烷。