公开(公告)号：KR1020140080750A

公开(公告)日：2014-07-01

申请号：KR1020120146827

申请日：2012-12-14

Applicant: 한국전자통신연구원

Inventor： 주철원 ,  윤형섭 ,  임종원 ,  이상흥 ,  김성일 ,  강동민 ,  남은수 ,  문재경

IPC: G01R31/26

CPC classification number: G01R1/0466 ,  G01R1/0458

Abstract: According to an embodiment of the present invention, a semiconductor device testing apparatus comprises a first socket accommodating a package on which a semiconductor device to be tested is mounted; and a second socket coupled to the first socket. The first socket includes an upper part having a hole accommodating the package and a terminal pad formed at both side ends of the hole to hold input and output terminals of the package; and a lower part having a heating room, which accommodates a heater to heat the semiconductor device, and a temperature sensing part for measuring the temperature of the semiconductor device in the heating room. The second socket comprises a probe card with a pattern to receive a test signal from an external power source.

Abstract translation: 根据本发明的一个实施例，一种半导体器件测试装置包括容纳封装的第一插座，其上安装有要测试的半导体器件; 以及耦合到第一插座的第二插座。 第一插座包括具有容纳封装的孔的上部和形成在孔的两个侧端处以保持封装的输入和输出端子的端子焊盘; 以及具有加热室的下部，其容纳用于加热半导体器件的加热器，以及用于测量加热室中的半导体器件的温度的温度检测部。 第二插座包括具有从外部电源接收测试信号的模式的探针卡。

公开(公告)号：KR1020140080574A

公开(公告)日：2014-07-01

申请号：KR1020120144126

申请日：2012-12-12

Applicant: 한국전자통신연구원

Inventor： 윤형섭 ,  민병규 ,  임종원 ,  안호균 ,  김성일 ,  이상흥 ,  강동민 ,  주철원 ,  문재경

IPC: H01L29/778 ,  H01L29/40 ,  H01L29/423 ,  H01L29/66 ,  H01L29/20 ,  H01L21/285 ,  H01L21/28 ,  H01L29/201

CPC classification number: H01L29/66462 ,  H01L21/02118 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/0254 ,  H01L21/28264 ,  H01L21/28593 ,  H01L21/31111 ,  H01L21/31144 ,  H01L29/2003 ,  H01L29/201 ,  H01L29/205 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/42376 ,  H01L29/778 ,  H01L29/7786

Abstract: Provided is a field effect transistor. The transistor includes a capping layer provided on a substrate; source and drain ohmic electrodes spaced apart from each other on the capping layer; first and second insulating layers sequentially laminated on the capping layer to cover the source and drain ohmic electrodes; a Γ-shaped gate electrode including a leg part passing through the second insulating layer, the first insulating layer, and the capping layer and connected with the substrate between the source and drain ohmic electrodes and a head part extended to the second insulating layer; a first planarization layer provided on the second insulating layer to cover the Γ-shaped gate electrode; and a first electrode passing through the first planarization layer and the second and first insulating layers, and connected with the source and drain ohmic electrodes while the being extended to the first planarization layer.

Abstract translation: 提供了场效应晶体管。 晶体管包括设置在基板上的封盖层; 源极和漏极欧姆电极在封盖层上彼此间隔开; 顺序层压在覆盖层上以覆盖源极和漏极欧姆电极的第一和第二绝缘层; Γ形栅电极，包括通过第二绝缘层的脚部，第一绝缘层和覆盖层，并且与源极和漏极欧姆电极之间的衬底连接，以及延伸到第二绝缘层的头部; 设置在所述第二绝缘层上以覆盖所述Γ形栅电极的第一平坦化层; 以及穿过第一平坦化层和第二和第一绝缘层的第一电极，并且在被延伸到第一平坦化层的同时与源极和漏极欧姆电极连接。

公开(公告)号：KR1020130126840A

公开(公告)日：2013-11-21

申请号：KR1020120047360

申请日：2012-05-04

Applicant: 한국전자통신연구원

Inventor： 주철원 ,  김해천 ,  윤형섭 ,  장우진 ,  이상흥 ,  김동영 ,  임종원 ,  강동민 ,  안호균 ,  이종민 ,  남은수

IPC: H01L23/48 ,  H01L23/34

CPC classification number: H01L29/2003 ,  H01L24/05 ,  H01L24/06 ,  H01L24/16 ,  H01L29/41758 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787 ,  H01L2224/0401 ,  H01L2224/05554 ,  H01L2224/05568 ,  H01L2224/056 ,  H01L2224/06135 ,  H01L2224/131 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2924/00014

Abstract: The present invention relates to a GaN (gallium nitride)-based compound power semiconductor device and a manufacturing method thereof. The gallium nitride-based compound power semiconductor device comprises a gallium nitride-based compound element growing on a wafer; a contact pad including a source, a drain and a gate on the gallium nitride-based compound element; a module substrate to which the gallium nitride-based compound element is bonded with a flip chip; a bonding pad formed on the module substrate; and a bump formed on the bonding pad of the module substrate to bond the contact pad and the bonding pad with the flip chip. According to the present invention, processing costs are low by forming the bump on the substrate with a front process (wafer level). According to the present invention, heat generated in an AlGaN HEMT element is quickly discharged becuase a subsource contact pad and subdrain contact pad of the substrate is formed on the substrate. According to the present invention, the heat generated in the AlGaN HEMT element is effectively discharged by forming a via hole on the substrate and filling the via hole with conductive metal.

Abstract translation: 本发明涉及一种GaN（氮化镓））复合功率半导体器件及其制造方法。 氮化镓基复合功率半导体器件包括在晶片上生长的氮化镓基化合物元素; 接触焊盘，其包括在所述氮化镓基复合元件上的源极，漏极和栅极; 所述氮化镓系复合元件与倒装芯片接合的模块基板; 形成在所述模块基板上的焊盘; 以及形成在模块基板的焊盘上的凸块，以将接触焊盘和焊盘与倒装芯片接合。 根据本发明，通过用前处理（晶片级）在基板上形成凸块来加工成本低。 根据本发明，在AlGaN HEMT元件中产生的热量由于子源接触焊盘而快速放电，并且在衬底上形成衬底的亚临界接触焊盘。 根据本发明，通过在基板上形成通孔并用导电金属填充通孔来有效地排出在AlGaN HEMT元件中产生的热量。

公开(公告)号：KR1020130071748A

公开(公告)日：2013-07-01

申请号：KR1020110139142

申请日：2011-12-21

Applicant: 한국전자통신연구원

Inventor： 강동민 ,  임종원 ,  이상흥 ,  윤형섭 ,  주철원 ,  문재경 ,  남은수

IPC: H04B1/06

CPC classification number: H04B1/18 ,  H03F1/26 ,  H03F2200/294

Abstract: PURPOSE: A multi-channel beam scan receiver is provided to include a multi-channel antenna in a single substrate. CONSTITUTION: A switch (103) selects one of plurality of signals received through a multi-channel antenna. A first low-noise amplifier (105) firstly amplifies a signal selected in the switch. A band-pass filter (107) filters the firstly amplified signal. A second low-noise amplifier (109) secondly amplifies the filtered signal. A detector (111) converts the secondly amplified signal into voltage. [Reference numerals] (101) Multi-channel antenna; (103) Switch; (105) First low-noise amplifier; (107) Band-pass filter; (109) Second low-noise amplifier; (111) Detector; (115) DC amplifier

Abstract translation: 目的：提供多通道光束扫描接收器，以在单个基板中包括多通道天线。 构成：开关（103）选择通过多通道天线接收的多个信号中的一个。 第一低噪声放大器（105）首先放大在开关中选择的信号。 带通滤波器（107）对第一放大信号进行滤波。 第二低噪声放大器（109）二次放大经滤波的信号。 检测器（111）将第二放大信号转换为电压。 （附图标记）（101）多声道天线; （103）开关; （105）第一低噪声放大器; （107）带通滤波器; （109）第二低噪声放大器; （111）检测器; （115）直流放大器

公开(公告)号：KR1020110052336A

公开(公告)日：2011-05-18

申请号：KR1020090109325

申请日：2009-11-12

Applicant: 한국전자통신연구원

Inventor： 임종원 ,  안호균 ,  강동민 ,  장우진 ,  지홍구 ,  윤형섭 ,  김해천 ,  남은수

IPC: H01L21/336

Abstract: PURPOSE: A method for manufacturing a transistor is provided to reduce resistance and parasitic capacitance by controlling the height of a Y-shaped gate electrode according to the thickness of a mold oxide layer with a trench and a depressed part. CONSTITUTION: A source electrode(11) and a drain electrode(12) are formed on a substrate(10). A mold oxide layer is formed on the substrate. A depressed part is formed on the upper side of the mold oxide layer between the source electrode and the drain electrode. A trench which exposes the substrate is formed by removing the mold oxide layer in the depressed part. A recess(26) is formed by removing the substrate exposed by the trench with a preset depth. A Y shaped gate electrode(30) is connected from the recess to the depressed part.

Abstract translation: 目的：提供一种用于制造晶体管的方法，通过根据具有沟槽和凹陷部分的模具氧化物层的厚度控制Y形栅电极的高度来降低电阻和寄生电容。 构成：在基板（10）上形成源电极（11）和漏电极（12）。 在基板上形成模具氧化物层。 在源电极和漏电极之间的模具氧化物层的上侧形成有凹部。 通过去除凹陷部分中的模制氧化物层来形成暴露基板的沟槽。 通过以预设深度去除由沟槽暴露的衬底而形成凹部（26）。 Y形栅电极（30）从凹部连接到凹部。

公开(公告)号：KR1020100060108A

公开(公告)日：2010-06-07

申请号：KR1020080118554

申请日：2008-11-27

Applicant: 한국전자통신연구원

Inventor： 김해천 ,  강동민 ,  지홍구 ,  안호균 ,  문재경 ,  임종원 ,  장우진 ,  김동영 ,  이상흥 ,  유현규 ,  남은수

IPC: H01L27/04 ,  H01L29/772

Abstract: PURPOSE: A method for manufacturing a pseudomorphic high electron mobility transistor device is provided to satisfy wideband characteristics and unconditionally stable conditions by including a negative feedback circuit. CONSTITUTION: In a method for manufacturing a pseudomorphic high electron mobility transistor device, an epitaxial substrate is provided(101). A source and a drain are formed on a substrate. The epitaxial substrate is processed by a gate recess etching including a dry and wet method to form a recess region. The gate(180) is formed in the recess region.

Abstract translation: 目的：提供一种用于制造伪像高电子迁移率晶体管器件的方法，通过包括负反馈电路来满足宽带特性和无条件稳定条件。 构成：在制造假晶高电子迁移率晶体管器件的方法中，提供外延衬底（101）。 源极和漏极形成在衬底上。 通过包括干法和湿法的栅极凹槽蚀刻来处理外延衬底以形成凹陷区域。 门（180）形成在凹陷区域中。

公开(公告)号：KR1020100060107A

公开(公告)日：2010-06-07

申请号：KR1020080118553

申请日：2008-11-27

Applicant: 한국전자통신연구원

Inventor： 장우진 ,  문재경 ,  지홍구 ,  안호균 ,  임종원 ,  강동민 ,  김동영 ,  이상흥 ,  김해천 ,  남은수

IPC: H03F1/30 ,  H03F3/189

CPC classification number: H03F3/193 ,  H03F1/0211 ,  H03F1/301 ,  H03F1/56 ,  H03F2200/451

Abstract: PURPOSE: A super high frequency amplifier and a bias circuit for the same are provided to optimize performance by adjusting a source voltage, regardless of a change in the properties of a depletion-type FET(Field Effect Transistor) due to the process change. CONSTITUTION: An amplifier circuit amplifies a high frequency signal through a depletion-type FET(30). An input matching circuit(20) matches the inputted high frequency signal in the depletion-type FET. An output matching circuit(40) matches the amplified signal, and thereby outputs the matched signal. A bias circuit(80) gives a negative value to a voltage between a gate and a source of the depletion-type FET by applying a positive voltage to the source of the depletion-type FET. The bias circuit tunes the voltage between the gate and the source by changing the positive voltage applied to the source.

Abstract translation: 目的：提供超高频放大器和偏置电路，以通过调节源极电压来优化性能，而不管由于过程变化而导致的耗尽型FET（场效应晶体管）的特性变化。 构成：放大器电路通过耗尽型FET（30）放大高频信号。 输入匹配电路（20）匹配耗尽型FET中输入的高频信号。 输出匹配电路（40）匹配放大的信号，从而输出匹配信号。 偏置电路（80）通过向耗尽型FET的源极施加正电压来给出耗尽型FET的栅极和源极之间的电压的负值。 偏置电路通过改变施加到源极的正电压来调节栅极和源极之间的电压。

公开(公告)号：KR100668363B1

公开(公告)日：2007-01-16

申请号：KR1020060029313

申请日：2006-03-31

Applicant: 한국전자통신연구원

Inventor： 강동민 ,  홍주연 ,  심재엽 ,  윤형섭 ,  이경호

IPC: H04B1/06

CPC classification number: H04B1/28 ,  H01Q1/24 ,  H03G3/3052

Abstract: An RF transceiver for a millimeter wave band radar senor using an MMIC(Monolithic Microwave Integrated Circuit) is provided to enable a signal isolation block to frequency-convert a signal, transmitted from a transmission block, by using an IF of a local oscillation signal and transmit the frequency-converted signal through a band pass filter, thereby improving receive sensitivity as much as 20 to 30db. An RF transceiver for a radar senor comprises the followings: a transmission block(120) which amplifies a modulation signal and radiates the amplified modulation signal through a transmission antenna(106); a signal isolation block(122) which performs frequency conversion on a signal, transmitted from the transmission block(120), by using the IF(Intermediate Frequency) of a local oscillation signal and transmits the frequency-converted signal through a band pass filter(116); a reception block(121) which mixes an external signal, received through a receiving antenna(107), with a signal transmitted from the signal isolation block(122) and transmits the mixed signal; and an IF block(123) which receives a signal transmitted from the reception block(121), mixes the received signal with the local oscillation signal, and amplifies the mixed signal to outputs a bit signal.

Abstract translation: 提供了一种使用MMIC（单片微波集成电路）的毫米波段雷达传感器的RF收发器，以使信号隔离块能够通过使用本地振荡信号的IF对从传输块传输的信号进行频率转换， 通过带通滤波器传送经频率转换的信号，从而提高20至30db的接收灵敏度。 用于雷达传感器的RF收发器包括：传输块（120），其放大调制信号并通过发射天线（106）辐射放大的调制信号; 信号隔离块（122），其通过使用本地振荡信号的IF（中频）对从发送块（120）发送的信号进行频率转换，并通过带通滤波器（ 116）; 接收块（121），其将通过接收天线（107）接收的外部信号与从所述信号隔离块（122）发送的信号进行混合，并发送所述混合信号; 以及接收从接收块（121）发送的信号的IF块（123），将接收到的信号与本地振荡信号进行混合，并放大混合信号以输出位信号。

公开(公告)号：KR100644812B1

公开(公告)日：2006-11-15

申请号：KR1020050118990

申请日：2005-12-07

Applicant: 한국전자통신연구원

Inventor： 윤형섭 ,  심재엽 ,  강동민 ,  홍주연 ,  이경호

IPC: H01L21/335

Abstract: An RF electronic device and its manufacturing method are provided to obtain a uniform and precise T shaped gate electrode and to prevent the short of the T shaped gate electrode by using a T shaped insulating gate pattern. An etch stop layer(307) and an ohmic layer(308) are formed on a substrate(301). An insulating layer is formed on the ohmic layer. An insulating gate pattern is formed on the resultant structure by patterning selectively the insulating layer. A spacer is formed on the insulating gate pattern. A gate recess is formed on the etch stop layer and the ohmic layer by etching partially the etch stop layer and the ohmic layer. A first metal film is formed on the resultant structure. A photoresist pattern is formed on the first metal film. A second metal film is then formed on the photoresist pattern. The first metal film is eliminated from the resultant structure by using the second metal film as a mask.

Abstract translation: 提供一种RF电子器件及其制造方法，以获得均匀且精确的T形栅极电极，并通过使用T形绝缘栅极图案来防止T形栅极电极短路。 蚀刻停止层（307）和欧姆层（308）形成在衬底（301）上。 在欧姆层上形成绝缘层。 通过选择性地构图绝缘层来在所得结构上形成绝缘栅极图案。 隔离物形成在绝缘栅极图案上。 通过部分蚀刻蚀刻停止层和欧姆层，在蚀刻停止层和欧姆层上形成栅极凹部。 在所得结构上形成第一金属膜。 在第一金属膜上形成光致抗蚀剂图案。 然后在光致抗蚀剂图案上形成第二金属膜。 通过使用第二金属膜作为掩模从所得结构中消除第一金属膜。

公开(公告)号：KR100636597B1

公开(公告)日：2006-10-23

申请号：KR1020050119004

申请日：2005-12-07

Applicant: 한국전자통신연구원

Inventor： 심재엽 ,  윤형섭 ,  강동민 ,  홍주연 ,  이경호

IPC: H01L29/778 ,  H01L21/027