中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

204 records (took 0.025 seconds)

    SiC-MOSFET mit hoher Kanalbeweglichkeit
    71.
    发明专利
    SiC-MOSFET mit hoher Kanalbeweglichkeit 未知

    公开(公告)号：DE102011053641A1

    公开(公告)日：2013-03-21

    申请号：DE102011053641

    申请日：2011-09-15

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHULZE HANS-JOACHIM ,  MAUDER ANTON ,  RUPP ROLAND

    IPC: H01L29/04 ,  H01L21/336 ,  H01L29/16 ,  H01L29/78

    Abstract: Eine Halbleitervorrichtung (100) weist einen Halbleiterkörper (101) aus SiC sowie einen Feldeffektransistor auf. Der Feldeffektransistor weist eine im Halbleiterkörper (101) aus SiC ausgebildete Driftzone (102) sowie eine polykristalline Siliziumschicht (103) auf dem Halbleiterkörper (101) auf, wobei die polykristalline Siliziumschicht (103) eine mittlere Korngröße im Bereich von 10 nm bis 50 µm aufweist und ein Sourcegebiet (103s) sowie ein Bodygebiet (103b) umfasst. Darüber hinaus weist der Feldeffekttransistor eine an das Bodygebiet (103b) angrenzende Gatestruktur (104)auf.

    77.
    发明专利
    未知

    公开(公告)号：DE102005011652B4

    公开(公告)日：2007-06-14

    申请号：DE102005011652

    申请日：2005-03-14

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MAUDER ANTON ,  ACHATZ GERFRIED

    IPC: H01L21/60 ,  H01L23/28 ,  H01L23/48

    Abstract: The production of a semiconductor component comprises arranging one or more semiconductor chips (1, 2) on a substrate (3) and applying a mask-forming/masking layer (8) is to the surface of the substrate, where before applying the masking layer the actual positions of the contact surfaces are determined. Through-apertures are made in the masking-layer at the regions located over the identified contact surfaces (18,19). Subsequently, on the masking layer at least one conductor layer is applied and penetrates through the apertures to the contact surfaces.

    Lateral semiconductor component with drift path and potential distribution structure, used for potential measurements, includes drift path with potential distribution structure
    79.
    发明专利
    Lateral semiconductor component with drift path and potential distribution structure, used for potential measurements, includes drift path with potential distribution structure 未知

    公开(公告)号：DE102005039804A1

    公开(公告)日：2007-03-15

    申请号：DE102005039804

    申请日：2005-08-22

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： MAUDER ANTON ,  SCHULZE HANS-JOACHIM ,  STRACK HELMUT ,  PFIRSCH FRANK

    IPC: H01L29/78

    Abstract: Drift path (5) or drift zone, extends laterally in a semiconductor body (7) between first and second electrodes (8, 9). Its material is type n. It is arranged on an insulating- or complementary, p type semiconductor substrate (10). On the top of the drift path (11), above the semiconductor body, the potential distribution structure (6) is arranged between first and second electrodes. The potential distribution structure divides the potential between these electrode in stages, producing a correspondingly-stepped field profile in the drift path below it. Insulation layer (13) intervenes between the underside (12) of the potential distribution structure and the top of the drift path. This (13) is SiO 2, Al 2O 3, or TiO 2. It is alternatively a silicon dioxide- or silicon nitride film. The potential distribution structure includes a layered capacitance between the electrodes on top of the drift path. This includes alternating conductive plates (15) and insulating plates (16). The surface normal (F) to these plates, is parallel to the drift path. Mean spacing between the conductive plates varies. Lateral capacity of the layered capacitance exceeds that of the drift path. In a variant design, a diode stack replaces the layered capacitance. Further variants based on the foregoing principles are described. Doping concentration in the drift path lies between 1 x 10 16> cm -3> and 2 x 10 17> cm -3>. The semiconductor component (1) is a lateral MOSFET, lateral JFET, lateral IGFET, PIN diode or Schottky diode. It has a planar gate structure or trench gate structure. The trench structure of the gate electrode (G) passes through a body zone (35). An independent claim IS INCLUDED FOR the corresponding method of manufacture.

    80.
    发明专利
    未知

    公开(公告)号：DE102005026408B3

    公开(公告)日：2007-02-01

    申请号：DE102005026408

    申请日：2005-06-08

    Applicant: INFINEON TECHNOLOGIES AG

    Inventor： SCHULZE HANS-JOACHIM ,  NIEDERNOSTHEIDE FRANZ-JOSEF ,  MAUDER ANTON ,  BARTHELMESS REINER

    IPC: H01L21/328 ,  H01L21/265 ,  H01L21/324 ,  H01L29/739 ,  H01L29/74 ,  H01L29/861

    Abstract: A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, the method including providing a semiconductor body having a first and a second side and a basic doping of a first conduction type. The method further includes irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side. The method also includes carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.

Patent Agency Ranking