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    MONITORING AND CONTROLLING PEROVSKITE OXIDE FILM GROWTH
    71.
    发明申请
    MONITORING AND CONTROLLING PEROVSKITE OXIDE FILM GROWTH 审中-公开
    监测和控制氧化铝膜生长

    公开(公告)号：WO03012826A3

    公开(公告)日：2003-09-25

    申请号：PCT/US0215845

    申请日：2002-05-16

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  DROOPAD RAVINDRANATH ,  OVERGAARD COREY

    IPC: C30B23/02 ,  H01L21/20 ,  H01L21/316 ,  H01L21/66 ,  H01L21/822 ,  H01L21/8258

    CPC classification number: H01L22/26 ,  C30B23/002 ,  C30B23/02 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/31691 ,  H01L21/8221 ,  H01L21/8258 ,  H01L2924/00011 ,  H01L2224/80001

    Abstract: High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

    Abstract translation: 使用RHEED信息生长单晶氧化物材料（24）的高质量外延层覆盖单晶衬底，例如大硅晶片（22），以监测生长膜的生长速率。 单晶氧化物层（24）可以用于形成用于附加层的单晶生长的柔顺衬底。 实现顺应性衬底的形成的一种方法包括首先通过氧化硅（28）的非晶界面层在与硅晶片（22）间隔开的硅晶片（22）上生长容纳缓冲层（24）。 非晶界面层（28）耗散应变并允许高质量单晶氧化物容纳缓冲层（24）的生长。

    MULTIJUNCTION SOLAR CELL
    72.
    发明申请
    MULTIJUNCTION SOLAR CELL 审中-公开
    多功能太阳能电池

    公开(公告)号：WO03009395A3

    公开(公告)日：2003-09-18

    申请号：PCT/US0214366

    申请日：2002-05-06

    Applicant: MOTOROLA INC

    Inventor： EISENBEISER KURT W ,  FREEBURG THOMAS ,  PRENDERGAST JAMES E ,  OOMS WILLIAM J ,  DROOPAD RAVINDRANATH ,  RAMDANI JAMAL

    IPC: H01L21/20 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/068

    CPC classification number: H01L31/0693 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02488 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/02551 ,  H01L21/31691 ,  H01L21/8221 ,  H01L23/66 ,  H01L31/0687 ,  H01L2924/0002 ,  Y02E10/544 ,  H01L2924/00

    Abstract: Multijunction solar cell structures (100) including high quality epitaxial layers of monocrystalline semiconductor materials that are grown overlying monocrystalline substrates (102) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers are disclosed. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (104) on a silicon wafer. The accommodating buffer (104) layer is a layer of monocrystalline material spaced apart from the silicon wafer by an amorphous interface layer (112) of silicon oxide. The amorphous interface layer (112) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Multiple and varied accommodating buffer layers can be used to achieve the monolithic integration of multiple non-lattice matched solar cell junctions (302, 304).

    Abstract translation: 公开了包括通过形成用于生长单晶层的柔性衬底生长在单晶衬底（102）如大硅晶片上的单质半导体材料的高质量外延层的多结太阳能电池结构（100）。 实现顺应性衬底的形成的一种方法包括首先在硅晶片上生长容纳缓冲层（104）。 容纳缓冲器（104）层是通过氧化硅的非晶界面层（112）与硅晶片间隔开的单晶材料层。 非晶界面层（112）耗散应变并允许高质量单晶氧化物容纳缓冲层的生长。 可以使用多个不同的容纳缓冲层来实现多个非晶格匹配的太阳能电池结的单片集成（302,304）。

    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME
    73.
    发明申请
    INTEGRATED RADIATION EMITTING SYSTEM AND PROCESS FOR FABRICATING SAME 审中-公开
    一体化辐射发射系统及其制造方法

    公开(公告)号：WO0209148A3

    公开(公告)日：2003-07-31

    申请号：PCT/US0122543

    申请日：2001-07-18

    Applicant: MOTOROLA INC

    Inventor： FOLEY BARBARA M ,  OOMS WILLIAM JAY ,  PRENDERGAST JAMES E ,  EISENBEISER KURT ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH

    IPC: H01L21/20 ,  H01L33/00 ,  H01L33/30 ,  H01S5/02 ,  H01S5/026 ,  H01S5/183 ,  H01S5/32 ,  G02B6/12

    CPC classification number: H01L33/30 ,  H01L21/02381 ,  H01L21/02439 ,  H01L21/02488 ,  H01L21/02521 ,  H01L33/0066 ,  H01S5/021 ,  H01S5/0264 ,  H01S5/183 ,  H01S5/3201

    Abstract: High quality epitaxial layers of compound semiconductor materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer on a silicon wafer. The accommodating buffer layer is a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radiation systems, including radiation sources such as light emitting diode or lasers and wave guides may be formed in the high quality epitaxial compound semiconductor material and above the oxide layers.

    Abstract translation: 通过首先在硅晶片上生长容纳缓冲层，可以将复合半导体材料的高质量外延层生长在大的硅晶片上。 容纳缓冲层是通过氧化硅的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 可以在高质量的外延化合物半导体材料中和氧化物层之上形成辐射系统，包括诸如发光二极管或激光器和波导的辐射源。

    SINGLE CRYSTALLINE OXIDE ON A SEMICONDUCTOR SUBSTRATE
    75.
    发明申请
    SINGLE CRYSTALLINE OXIDE ON A SEMICONDUCTOR SUBSTRATE 审中-公开
    半导体衬底上的单晶氧化物

    公开(公告)号：WO0241365A3

    公开(公告)日：2003-01-23

    申请号：PCT/US0145570

    申请日：2001-10-24

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  OVERGAARD COREY DANIEL ,  DROOPAD RAVINDRANATH ,  HALLMARK JERALD A ,  OOMS WILLIAM J

    IPC: C30B23/02 ,  H01L20060101 ,  H01L21/316 ,  H01L31/18

    CPC classification number: H01L21/31683 ,  H01L31/18

    Abstract: A method of forming single crystalline oxides on the surface of a semiconductor substrate includes placing the semiconductor substrate (10) in a vacuum chamber and depositing a thin layer of material (12) including a II metal on the surface (11). At a minimum the layer is thick enough to passivate the surface. An alternative oxidation agent is introduced into the chamber at a partial vapor pressure and at a temperature so as to form a layer (14) of single crystal oxide from the thin layer of material with the layer of single crystal oxide lattice matched to the semiconductor substrate. The surface is monitored by reflection high energy electron diffraction (RHEED) during the oxide growth. In a preferred embodiment single crystal BaO or (Ba,Sr)O is grown on and lattice matched to a silicon substrate.

    Abstract translation: 在半导体衬底的表面上形成单晶氧化物的方法包括将半导体衬底（10）放置在真空室中并在表面（11）上沉积包括II金属的薄层材料（12）。 至少该层足够厚以钝化表面。 在部分蒸汽压力和温度下将一种替代的氧化剂引入室中，从而从薄层材料形成单晶氧化物层（14），其中单晶氧化物晶格层与半导体衬底匹配 。 在氧化物生长期间，通过反射高能电子衍射（RHEED）监测表面。 在优选实施方案中，单晶BaO或（Ba，Sr）O生长并与硅衬底晶格匹配。

    SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING SAME
    79.
    发明申请
    SEMICONDUCTOR STRUCTURE AND PROCESS FOR FABRICATING SAME 审中-公开
    半导体结构及其制造方法

    公开(公告)号：WO0241378A3

    公开(公告)日：2003-11-06

    申请号：PCT/US0131989

    申请日：2001-10-15

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  RAMDANI JAMAL ,  DROOPAD RAVINDRANATH

    IPC: C30B25/18 ,  C30B25/20 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  C30B23/02

    CPC classification number: H01L21/28194 ,  C30B25/18 ,  C30B25/20 ,  H01L21/31691 ,  H01L29/513 ,  H01L29/517

    Abstract: A structure and method for forming a high dielectric constant device structure includes a monocrystalline semiconductor substrate (101) and an insulating layer (103) formed of an epitaxially grown oxide such as (A)y(TixM1-x)1-yO3, wherein A is an alkaline earth metal or a combination of alkaline earth metals and M is a metallic or semi-metallic element. Semiconductor devices formed in accordance with the present invention exhibit low leakage current density.

    Abstract translation: 用于形成高介电常数器件结构的结构和方法包括单晶半导体衬底（101）和由诸如（A）y（TixM1-x）1-yO3的外延生长氧化物形成的绝缘层（103），其中A 是碱土金属或碱土金属的组合，M是金属或半金属元素。 根据本发明形成的半导体器件表现出低的漏电流密度。

    METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES
    80.
    发明申请
    METHOD FOR FABRICATING SEMICONDUCTOR STRUCTURES 审中-公开
    制造半导体结构的方法

    公开(公告)号：WO03038878A3

    公开(公告)日：2003-08-21

    申请号：PCT/US0232345

    申请日：2002-10-10

    Applicant: MOTOROLA INC

    Inventor： YU ZHIYI ,  DROOPAD RAVINDRANATH ,  OVERGAARD COREY

    IPC: C30B25/02 ,  C30B25/18 ,  H01L21/20

    CPC classification number: C30B25/02 ,  C30B25/18 ,  C30B29/40 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/02694

    Abstract: High quality epitaxial layers of monocrystalline materials (26) can be grown overlying monocrystalline substrates (22) such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer (24) comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer (28) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. The surface of the underlying silicon wafer is prepared by the controlled growth and subsequent reduction of a surface oxide, and then by properly reconstructing the silicon surface by the deposition of a thin layer of an alkaline earth metal. Monocrystalline growth of the accommodating buffer layer is enhanced by an interrupted growth procedure.

    Abstract translation: 通过形成用于生长单晶层的顺应性衬底，可以将单晶材料（26）的高质量外延层生长成覆盖在单晶衬底（22）如大硅晶片上。 容纳缓冲层（24）包括通过氧化硅的非晶界面层（28）与硅晶片隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 下面的硅晶片的表面通过受控生长并随后减少表面氧化物，然后通过沉积薄层的碱土金属来适当地重建硅表面来制备。 容纳缓冲层的单晶生长通过中断的生长过程增强。

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