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    73.
    发明专利
    未知

    公开(公告)号：DE69932516D1

    公开(公告)日：2006-09-07

    申请号：DE69932516

    申请日：1999-09-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： ZERBINI SARAH ,  VIGNA BENEDETTO ,  GARAVAGLIA MASSIMO ,  TOMESI GIANLUCA

    IPC: G01P15/10 ,  B81B3/00 ,  G01P15/00 ,  G01P15/097 ,  G01P15/125 ,  G01P21/00 ,  H01L29/84

    Abstract: The inertial sensor (1) comprises an inner stator (2) and an outer rotor (3) which are electrostatically coupled together by means of mobile sensor arms (5) and fixed sensor arms (9a, 9b). The rotor (3) is connected to a calibration microactuator (12) comprising four sets (27) of actuator elements (13) arranged one for each quadrant of the inertial sensor. There are two actuator elements (13) making up each set, which are identical to each other, are angularly equidistant, and each of which comprises a mobile actuator arm (15) connected to the rotor (3) and bearing a plurality of mobile actuator electrodes (16), and a pair of fixed actuator arms (17a, 17b) which are set on opposite sides with respect to the corresponding mobile actuator arm and bear a plurality of fixed actuator electrodes (19a, 19b). The mobile actuator electrodes (16) and fixed actuator electrodes (19a, 19b) are connected to a driving unit (20) which biases them so as to cause a preset motion of the rotor (3), the motion being detected by a sensing unit (24) connected to the fixed sensor arms (9a, 9b).

    75.
    发明专利
    未知

    公开(公告)号：DE69734280D1

    公开(公告)日：2006-02-09

    申请号：DE69734280

    申请日：1997-07-10

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  FERRERA MARCO ,  MONTANINI PIETRO

    IPC: B81B3/00 ,  G01C19/00 ,  G01C19/56 ,  G01P15/00 ,  G01P15/08 ,  G01P15/125 ,  H01L21/00 ,  H01L21/762 ,  H01L21/764 ,  H01L29/84

    Abstract: To increase the sensitivity of the sensor the suspended structure (40) forming the seismic mass has a tungsten core (26) which has high density. To manufacture it, a sacrificial layer (21) of silicon oxide, a polycrystal silicon layer (24), a tungsten layer (26) and a silicon carbide layer (28) are deposited in succession over a single crystal silicon body (1); the suspended structure (40) is defined by selectively removing the silicon carbide (28), tungsten (26) and polycrystal silicon (24) layers; spacers (30') of silicon carbide are formed which cover the uncovered ends of the tungsten layer (26); and the sacrificial layer (21) is then removed.

    76.
    发明专利
    未知

    公开(公告)号：DE69830789D1

    公开(公告)日：2005-08-11

    申请号：DE69830789

    申请日：1998-07-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  ZERBINI SARAH ,  SASSOLINI SIMONE ,  MENESCARDI CARLO

    IPC: G11B5/596 ,  G11B21/02 ,  G11B21/10 ,  H02N1/00

    Abstract: The microactuator (30) comprises a motor element (32) including a stator (38) and a rotor (40) capacitively coupled to the stator (38); an actuator element (34) having a circular structure; and a transmission structure (36) interposed between the motor element (32) and the actuator element (34) to transmit a rotary movement of the motor element (32) into a corresponding rotary movement of the actuator element (34). In particular, the transmission structure (36) comprises a pair of transmission arms (80, 81) identical to each other, arranged symmetrically with respect to a symmetry axis (A) of the microactuator (30). The transmission arms (80, 81) extend between two approximately diametrically opposed regions of the rotor (40) to diametrically opposed regions (84) of the actuator element (34).

    77.
    发明专利
    未知

    公开(公告)号：DE69828962D1

    公开(公告)日：2005-03-17

    申请号：DE69828962

    申请日：1998-07-30

    Applicant: ST MICROELECTRONICS SRL

    Inventor： SASSOLINI SIMONE ,  ZERBINI SARAH ,  VIGNA BENEDETTO ,  MASTROMATTEO UBALDO

    IPC: G11B5/11 ,  G11B5/60 ,  G11B5/55

    Abstract: The microactuator (9) is attached to a first face (43) of a coupling (8) formed on a suspension (5), so that the R/W transducer (6) projects from the opposite face (44). A hole (41; 56) in the coupling (8) permits passage of an adhesive mass (42) interposed between the rotor (11) of the microactuator (9) and the R/W transducer (6). A strip (40) of adhesive material extends between the die (25) accommodating the microactuator (9) and the coupling (8), and externally surrounds the microactuator (9). The coupling (8) acts as a protective shield for the microactuator (9), both mechanically and electrically; it covers the microactuator (9) at the front, and prevents foreign particles from blocking the microactuator (9); in addition it electrically insulates the R/W transducer (6), sensitive to magnetic fields, from regions of the microactuator biased to a high voltage. With the gimbal (8), the strip (40) forms a sealing structure, which in practice surrounds the microactuator (9) on all sides.

    78.
    发明专利
    未知

    公开(公告)号：DE69826242D1

    公开(公告)日：2004-10-21

    申请号：DE69826242

    申请日：1998-05-05

    Applicant: ST MICROELECTRONICS SRL

    Inventor： MASTROMATTEO UBALDO ,  MURARI BRUNO ,  VIGNA BENEDETTO ,  ZERBINI SARAH

    IPC: G11B5/596 ,  G11B5/55 ,  G11B5/58 ,  G11B21/10 ,  H02N1/00 ,  G11B5/00

    Abstract: The method comprises the steps of: forming an integrated device (54) including a microactuator (10) in a semiconductor material wafer (29); forming an immobilisation structure (45,47) of organic material on the wafer; simultaneously forming a securing flange (51) integral with the microactuator (10) and electrical connections for connecting the integrated device to a read/write head; bonding a transducer (6,55) supporting the read/write head to the securing flange (51); connecting the electrical connections to the read/write head; cutting the wafer into dices; bonding the actuator unit to a suspension; and removing the immobilisation structure (45,47).

    80.
    发明专利
    未知

    公开(公告)号：DE69627645T2

    公开(公告)日：2004-02-05

    申请号：DE69627645

    申请日：1996-07-31

    Applicant: ST MICROELECTRONICS SRL

    Inventor： VIGNA BENEDETTO ,  FERRARI PAOLO ,  VILLA FLAVIO

    IPC: G01L9/06 ,  B81B3/00 ,  B81C1/00 ,  G01L9/00 ,  H01L29/84

    Abstract: The pressure sensor is integrated in a SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements (10) and the electronic components (4, 6-8) integrated in the same chip, trenches (26) are formed in the upper wafer (23) of the substrate and extending from the surface to the layer of insulating material (22); the layer of insulating material (22) is chemically etched through the trenches (26) to form an opening (31) beneath the diaphragm (27); and a dielectric layer (25) is deposited to outwardly close the trenches (26) and the opening (31). Thus, the process is greatly simplified, and numerous packaging problems eliminated.

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