公开(公告)号：EP3240306A1

公开(公告)日：2017-11-01

申请号：EP17162651.8

申请日：2017-03-23

Applicant: STMicroelectronics S.r.l.

Inventor： BRIOSCHI, Roberto ,  GHIDONI, Marco Omar

IPC: H04R19/00 ,  B06B1/02 ,  B81C1/00 ,  H04M1/03 ,  H04R3/00

CPC classification number: H04R19/04 ,  B06B1/0292 ,  B81B7/04 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2201/047 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/0023 ,  B81C2203/0792 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2924/15151 ,  H04R1/44 ,  H04R3/005 ,  H04R7/06 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003 ,  H04R2499/11 ,  H01L2924/00014

Abstract: A multi-device module (61), comprising: a first substrate (23), which houses a first MEMS transducer (21, 1), designed to transduce a first environmental quantity into a first electrical signal, and an integrated circuit (22, 22'), coupled to the first MEMS transducer for receiving the first electrical signal; a second substrate (49), which houses a second MEMS transducer (41, 42), designed to transduce a second environmental quantity into a second electrical signal; and a flexible printed circuit (36), mechanically connected to the first and second substrates and electrically coupled to the integrated circuit and to the second MEMS transducer so that the second electrical signal flows, in use, from the second MEMS transducer to the integrated circuit.

Abstract translation: 1。一种多装置模块（61），包括：第一基板（23），其容纳被设计成将第一环境量转换成第一电信号的第一MEMS换能器（21,1）;以及集成电路 耦合到所述第一MEMS换能器，用于接收所述第一电信号; 第二衬底（49），其容纳第二MEMS换能器（41,42），所述第二MEMS换能器设计成将第二环境量转换成第二电信号; 和柔性印刷电路（36），所述柔性印刷电路机械连接到所述第一和第二基板并且电耦合到所述集成电路和所述第二MEMS换能器，使得所述第二电信号在使用中从所述第二MEMS换能器流到所述集成电路 。

公开(公告)号：EP3098195A1

公开(公告)日：2016-11-30

申请号：EP15200289.5

申请日：2015-12-15

Applicant: STMicroelectronics S.r.l.

Inventor： BRUNO, Giuseppe ,  CONTI, Sebastiano ,  CHIRICOSTA, Mario ,  VAIANA, Michele ,  IPPOLITO, Calogero Marco ,  MAIORE, Mario ,  CASELLA, Daniele

IPC: B81B7/00 ,  G01L19/00

CPC classification number: B81B7/007 ,  B81B7/02 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2207/094 ,  G01L19/0092 ,  G01N27/223 ,  H01L23/3121 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014

Abstract: A packaged sensor assembly includes: a packaging structure (2), having at least one opening (18); a humidity sensor (5) and a pressure sensor (10), which are housed inside the packaging structure (2) and communicate fluidically with the outside through the opening (18), and a control circuit (7), operatively coupled to the humidity sensor (5) and to the pressure sensor (10);
wherein the humidity sensor (5) and the control circuit (7) are integrated in a first chip (3), and the pressure sensor (10) is integrated in a second chip (8) distinct from the first chip (3) and bonded to the first chip (3).

Abstract translation: 包装传感器组件包括：具有至少一个开口（18）的包装结构（2）; 湿度传感器（5）和压力传感器（10），其容纳在所述包装结构（2）内并通过所述开口（18）与所述外部流体连通;以及控制电路（7），其可操作地耦合到所述湿度 传感器（5）和压力传感器（10）; 其中所述湿度传感器（5）和所述控制电路（7）集成在第一芯片（3）中，并且所述压力传感器（10）集成在与所述第一芯片（3）不同的第二芯片（8）中并且 到第一芯片（3）。

公开(公告)号：EP3042227A1

公开(公告)日：2016-07-13

申请号：EP14771989.2

申请日：2014-08-27

Applicant: Northrop Grumman Systems Corporation

Inventor： PARK, Jae I.

IPC: G02B6/12 ,  G02B6/30

CPC classification number: B81B3/0029 ,  B81B3/0021 ,  B81B7/0093 ,  B81B2201/0292 ,  B81B2201/047 ,  B82Y20/00 ,  G02B6/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: An optical-microwave-quantum transducer can include a tapered optical fiber configured to transmit and receive optical signals. The optical-microwave-quantum transducer can also include a cantilever that can include an optical cavity that includes a nanophotonic crystal. The optical cavity can be configured to provide mechanical excitation in response to electromagnetic excitation induced by photons emitted from the tapered optical fiber. The cantilever can also include a mechanical coupler that is configured to induce electrical modulation onto a superconducting cavity in response to the mechanical excitation. The mechanical coupler can also be configured to provide mechanical excitation in response to electromagnetic excitation induced by photons from the superconducting cavity. The optical cavity can further be configured to provide electromagnetic excitation that induces optical modulation on the tapered optical fiber in response to the mechanical excitation.

公开(公告)号：EP3021351A1

公开(公告)日：2016-05-18

申请号：EP15194327.1

申请日：2015-11-12

Applicant: Bayer Technology Services GmbH ,  Krohne Messtechnik GmbH

Inventor： REINHARDT-SZYBA, Maria ,  MÜLLER, Jörg

IPC: H01J43/18 ,  H01J43/28

CPC classification number: H01J43/18 ,  B81B7/00 ,  B81B2201/0292 ,  H01J43/28

Abstract: Die vorliegende Erfindung betrifft einen Sekundärelektronenvervielfacher (10), aufweisend ein elektrisch isolierendes Substrat (12, 12'), auf dem eine Mehrzahl an diskreten Dynoden (14) und gegebenenfalls wenigstens eine Fokussierungselektrode (18) und gegebenenfalls ein Detektor (16) angeordnet sind, wobei weiterhin eine Leitungsstruktur zum Anlegen von definierten unterschiedlichen elektrischen Potentialen an die Dynoden (14) vorgesehen ist, und wobei zumindest ein räumlich zwischen den Dynoden (14) positioniertes Volumen und gegebenenfalls ein zwischen wenigstens einer Dynode (14) und der wenigstens einen Fokussierungselektrode (18) positioniertes Volumen und gegebenenfalls ein zwischen wenigstens einer Dynode (14) und dem Detektor (16) positioniertes Volumen mit einem Vakuum beaufschlagbar ist, dadurch gekennzeichnet, dass zumindest die Dynoden (14) und gegebenenfalls weiterhin der Detektor (16) und gegebenenfalls die wenigstens eine Fokussierungselektrode (18) eine räumliche Ausdehnung in einem Bereich von größer oder gleich 50µm bis ≤ 1000µm aufweisen und durch ein Verfahren der Mikrosystemtechnik aufgebracht sind. Ein vorbeschriebener Sekundärelektronenvervielfacher (10) erlaubt ein gutes Verstärkungspotential einhergehend mit einer vereinfachten Herstellbarkeit.

Abstract translation: 本发明涉及一种包括在其上，任选地，检测器（16）上设置有多个离散的倍增极（14）和任选的至少一个聚焦电极（18）和一个电绝缘基片（12，12“）的二次电子倍增器（10）， 其中还提供了一种用于施加限定不同的电势到倍增极（14），并且其中提供了一种管结构至少一个在空间上的倍增极（14）之间定位的体积，和至少一个倍增电极（14）和所述至少一个聚焦电极之间任选的一个（18 ），其位于卷和任选的（倍增电极14）和所述检测器之间的至少一个（16）与真空定位体积可以采取行动，其特征在于至少所述倍增电极（14）和任选的进一步的检测器（16）和任选的至少一种 聚焦电极（18）的空间的Au sdehnung表现出在等于50微米‰¤1000微米并且由微系统技术的方法被施加的范围内的大于或。 将规定二次电子倍增器（10）允许具有简化制造沿良好的补强潜力。

公开(公告)号：EP2964097A4

公开(公告)日：2016-04-20

申请号：EP14761007

申请日：2014-03-07

Applicant: SHARP KK

Inventor： BROWN CHRISTOPHER JAMES ,  PRIOR-JONES MICHAEL ROBERT ,  HADWEN BENJAMIN JAMES

IPC: A61B8/00 ,  A61B8/14 ,  B06B1/02 ,  B81C1/00 ,  G01N29/24 ,  G01S7/52 ,  G01S15/89 ,  G10K11/34

CPC classification number: A61B8/4477 ,  A61B8/14 ,  A61B8/4281 ,  A61B8/4455 ,  A61B8/4488 ,  A61B8/4494 ,  A61B8/462 ,  A61B8/58 ,  B06B1/0207 ,  B06B2201/51 ,  B81B2201/0292 ,  B81B2207/015 ,  B81C1/00246 ,  B81C2203/0735 ,  G01S7/5202 ,  G01S7/52025 ,  G01S7/52079 ,  G01S7/5208 ,  G01S7/52084 ,  G01S15/8925 ,  G01S15/8927 ,  G01S15/8993 ,  G10K11/341 ,  G10K11/346

公开(公告)号：EP1891425B1

公开(公告)日：2011-10-05

申请号：EP06754196.1

申请日：2006-06-08

Applicant: Micronas GmbH

Inventor： KNITTEL, Thorsten, Dr. ,  FREITAG, Gunter ,  EISELE, Ignaz

IPC: G01N27/414

CPC classification number: B81B3/0086 ,  B81B2201/0292 ,  G01L7/082 ,  G01N27/4141

Abstract: Sensor comprising a detection element which outputs electrical signals, which sensor has superficial aluminium or aluminium-containing components, a first layer made of silicates being present on the surface of said components and a second layer, composed of n-octadecyltrichlorosilane, being applied to said first layer. Applicable to products such as gas sensors whose useful signals are very small, with the result that they are to be read out by means of field effect transistors. In these areas of signal processing, interference signals have to be precluded as far as possible. The product is a so-called GAsFET.

公开(公告)号：EP2260125A2

公开(公告)日：2010-12-15

申请号：EP09722727.6

申请日：2009-03-12

Applicant: GSI Helmholtzzentrum für Schwerionenforschung GmbH

Inventor： CORNELIUS, Thomas ,  ENSINGER, Wolfgang ,  NEUMANN, Reinhard ,  RAUBER, Markus

IPC: C25D1/08 ,  C25D5/18 ,  B01J19/00

CPC classification number: C25D1/006 ,  B01J19/0093 ,  B01J23/42 ,  B01J23/72 ,  B01J35/0006 ,  B01J2219/00783 ,  B01J2219/00835 ,  B01J2219/00846 ,  B01J2219/00853 ,  B01J2219/0086 ,  B01J2219/00873 ,  B22F1/0025 ,  B22F3/002 ,  B81B2201/0292 ,  B81B2201/051 ,  B81C99/0085 ,  B82Y15/00 ,  B82Y30/00 ,  B82Y40/00 ,  C25D1/00 ,  C25D1/003 ,  C25D1/04 ,  C25D1/08 ,  C25D5/18 ,  G01F1/688 ,  G01N25/00 ,  Y10S977/762 ,  Y10T29/49117 ,  Y10T428/12201 ,  Y10T428/12389 ,  Y10T428/24562 ,  Y10T428/24893 ,  Y10T428/25

Abstract: The invention concerns a nanowire structural element suited for use in a microreactor system or microcatalyzer system. A template based process is used for the production of the nanowire structural element, wherein the nanowires are electrochemically depositioned in the nanopores. The irradiation is carried out at different angles, such that a nanowire network is formed. The hollow chamber-like structure in the nanowire network is established through the dissolving of the template foil and removal of the dissolved template material. The interconnecting of the nanowires provides stability to the nanowire structural element and an electrical connection between the nanowires is created thereby.

公开(公告)号：EP2038207A2

公开(公告)日：2009-03-25

申请号：EP07766754.1

申请日：2007-06-14

Applicant: NXP B.V.

Inventor： SWOROWSKI, Marc ,  CHEVRIE, David, D., R. ,  PHILIPPE, Pascal

IPC: B81C1/00

CPC classification number: B81C1/00198 ,  B81B2201/0292 ,  H03H3/0072

Abstract: Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.

公开(公告)号：EP2027058A2

公开(公告)日：2009-02-25

申请号：EP07733870.5

申请日：2007-06-13

Applicant: Mta Müszaki Fizikai És Anyagtudományi Kutatóintéze

Inventor： ÁDÁM, Antalné ,  BÁRSONY, István ,  DÜCSÖ, Csaba ,  ERÖS, Magdolna ,  MOHÁCSY, Tibor ,  PAYER, Károlyné ,  VÁZSONYI, Éva

IPC: B81C1/00 ,  G06K9/00 ,  G01L5/22

CPC classification number: B81C1/00246 ,  B81B2201/0264 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2207/015 ,  B81C2201/0115 ,  B81C2203/0714 ,  B81C2203/0742 ,  G01L5/228 ,  G06F3/0414 ,  Y10T29/42

Abstract: The invention relates to a process for fabricating a monocrystalline silicon micromechanical element integrated with a CMOS circuit element within the CMOS technology. A portion of the surface layer of a monocrystalline substrate is selectively doped and a CMOS circuit element is fabricated within the substrate through the known steps of CMOS technology. Then, parts of the substrate underlying the selectively doped portion are etched porous through an exposed portion of the surface. Thereby, a buried sacrificial layer is formed. As a next step, metallic contact pieces of the circuit element through the known steps of CMOS technology are formed. Finally, the micromechanical element is formed by chemically dissolving said porous Si sacrificial layer.

公开(公告)号：EP1716070B1

公开(公告)日：2008-07-02

申请号：EP04802963.1

申请日：2004-12-20

Applicant: Robert Bosch GmbH

Inventor： BAER, Hans-Peter ,  HOECHST, Arnim

IPC: B81B3/00

CPC classification number: B81C1/00182 ,  B81B2201/0292 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2203/0353 ,  B81C2201/0178

Abstract: The invention concerns a micromechanical sensor and a method for the production thereof. According to the invention, the diaphragm can be reliably mounted regardless of process-related vibrations of the cavern etching process and the diaphragm can be provided in any shape due to the fact that a suitable binding of the diaphragm in an oxide layer produced by local oxidation is formed. The micromechanical sensor comprises: at least one substrate (1); an outer oxide layer (9) formed in a laterally outer region (4) in the substrate (1); a diaphragm (15) formed in a laterally inner diaphragm region (5) and having a number of perforations (16), and; a cavern (14) etched into the substrate (1) underneath the diaphragm (15), said diaphragm (15) being suspended in a suspending region (10) of the outer oxide layer (9), this region tapering toward the binding points (12) of the diaphragm (15), and the diaphragm (15) is, in the vertical height thereof, placed between a top side (17) and an underside (19) of the outer oxide layer (9).