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公开(公告)号：KR1020110038460A
公开(公告)日：2011-04-14
申请号：KR1020090095757
申请日：2009-10-08
Applicant: 한국화학연구원
IPC: C07F3/00 , H01L21/205 , B82B3/00
CPC classification number: C07F3/003 , B82B3/00 , C01G23/006 , C01G35/006 , C01P2002/34 , C01P2004/64 , C23C16/404 , H01L21/205
Abstract: PURPOSE: A method for preparing novel alkali earth metal dialkyl glycine compounds is provided to ensure thermal stability. CONSTITUTION: An alkali earthg metal dialkyl glycine compound is denoted by chemical formula 1. In chemical formula 1, M is alkali earth metal of Be, Mg, Ca, Sr, Ba, or Ra. The alkali earth metal dialkyl glycine compound is prepared by reacting alkali earth metal halide compound of chemical formula 2(MX_2) and sodium dialkyl glycine of chemical formula 3(NaOCOCH_2NR^1R^2). An alkali earth metal oxide nanoparticle is prepared using alkali earth metal dialkyl glycine compound as a precursor.
Abstract translation: 目的：提供一种制备新型碱土金属二烷基甘氨酸化合物的方法，以确保热稳定性。 构成：化学式1表示碱土金属二烷基甘氨酸化合物。在化学式1中，M为Be，Mg，Ca，Sr，Ba或Ra的碱土金属。 碱土金属二烷基甘氨酸化合物通过化学式2（MX_2）的碱土金属卤化物化合物与化学式3的二烷基甘氨酸钠（NaOCOCH 2 NR 1 1R 2）反应来制备。 碱土金属二烷基甘氨酸化合物作为前体制备碱土金属氧化物纳米粒子。
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公开(公告)号：KR1020100129608A
公开(公告)日：2010-12-09
申请号：KR1020090048255
申请日：2009-06-01
Applicant: 한국화학연구원
IPC: C07F7/18 , C23C16/42 , H01L21/205
CPC classification number: C07F7/1804 , C23C16/24 , C23C16/401 , C23C16/45525 , H01L21/2053
Abstract: PURPOSE: A silicon amino alkoxide compound is provided to use as a silicon ingredient for thin film deposition or alloy manufacturing. CONSTITUTION: A silicon amino alkoxide compound is denoted by chemical formula 1. A silicon amino alkoxide compound is prepared by reacting alkali metal salt of chemical formulas 4(M^1O-A^1-ONR^1R^2) and 5(M^2O-A^2-ONR^4R^5) with a silicon compound of chemical formula 3([R^6]_3-a-bX^1_bX^2_aSi-SiX^1_nX^2_m[R^3]_3-n-m). A silicon-containing thin film is prepared using the silicon amino alkoxide compound as a precursor. The thin film is formed by metal organic chemical vapor deposition or atom layer deposition.
Abstract translation: 目的：提供硅氨基醇盐化合物作为薄膜沉积或合金制造的硅成分。 组成：硅烷氧基化合物由化学式1表示。硅氨基烷氧基化合物是通过使化学式4的碱金属盐（M 1 O-A 1 - ONR ^ 1R ^ 2）和5（M' 2 O-A ^ 2-ONR ^ 4R ^ 5）与化学式3的硅化合物（[R 6] 3-a-bX 1 1-x X 2 2-Si x Si 1 N x ^ 2] [R 3 3] _3nm） 。 使用硅氨基醇盐化合物作为前体制备含硅薄膜。 薄膜由金属有机化学气相沉积或原子层沉积形成。
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公开(公告)号：KR100992982B1
公开(公告)日：2010-11-09
申请号：KR1020080113164
申请日：2008-11-14
Applicant: 한국화학연구원
IPC: C01G27/00
Abstract: 본 발명은 하기 화학식 1로 표시되는 하프늄 알콕사이드 화합물 및 이의 제조 방법에 관한 것으로, 본 발명에 따른 하프늄 알콕사이드 화합물은 열적으로 안정하여 하프늄 산화물 박막을 제조하는데 유리하게 이용될 수 있다.
[화학식 1]
Hf(OCR
1 R
2 R
3 )
4
[상기 화학식 1에서 R
1 및 R
2 는 독립적으로 C
1 -C
5 의 선형 또는 분지형 알킬기이고, R
3 는
C
2 -C
5 의 선형 알케닐 혹은 알키닐기다.]
하프늄, 하프늄 산화물 전구체, 하프늄 산화물, 박막, 유기금속 화학기상 증착법(MOCVD), 원자층 증착법(ALD)-
公开(公告)号：KR100963538B1
公开(公告)日：2010-06-15
申请号：KR1020080002020
申请日：2008-01-08
Applicant: 한국화학연구원
Abstract: 본 발명은 카드뮴 아미노알콕사이드 화합물을 이용하여 카드뮴 입자 또는 카드뮴 칼코게나이드 입자를 제조하는 방법에 관한 것이다. 본 발명에 따르는 제조방법은 카드뮴 아미노알콕사이드 화합물의 저온 열분해에 의해 나노크기로 용이하게 제조할 수 있을 뿐만 아니라 덮개리간드를 이용함으로써 유기용매에 잘 분산된 나노 콜로이드를 제조할 수 있는 장점이 있다.
카드뮴 아미노알콕사이드, 알킬카드뮴, 카드뮴, 카드뮴 산화물, 카드뮴 칼코게나이드, 나노 입자, 유기 콜로이드-
公开(公告)号：KR100929548B1
公开(公告)日：2009-12-03
申请号：KR1020070141190
申请日：2007-12-31
Applicant: 한국화학연구원
Abstract: 본 발명은 하기 화학식 1로 표시되는 신규의 카드뮴 아미노알콕사이드 화합물 및 이들의 제조방법에 관한 것이다. 본 발명에 따르는 카드뮴 화합물은 상온에서 고체 상태로 존재하며 열분해에 의해 나노 크기의 카드뮴, 카드뮴 산화물, 및 카드뮴 칼코게나이드를 제조하는데 유용하게 사용될 수 있는 장점이 있다.
[화학식 1]
[R
3 -Cd-(OA-NR
1 R
2 )]
4
카드뮴 아미노알콕사이드, 선구 물질, 아미노알콜, 알킬카드뮴Abstract translation: 提供氨基醇盐化合物以在低温下制造纳米尺寸的镉，氧化镉和镉硫族化合物。 用于制造化学式1的氨基烷醇盐化合物的方法是使化学式2的烷基镉化合物与化学式3的氨基醇反应。化学式1,2和3由[R3-Cd-（ OA-NR1R2）] 4，Cd（R3）2和HO-A-NR1R2。 在化学式1,2和3中，A是未被取代或被卤素取代的直链或支链（C2-C10）亚烷基。 R1和R2各自为未被取代或被卤素取代的直链或支链（C1-C7）烷基。 或者通过将R1和R2与（C4-C6）亚烷基结合形成杂环。 R3是直链或支链（C1-C7）烷基。
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Patent Agency Ranking
公开(公告)号：KR1020080011956A
公开(公告)日：2008-02-11
申请号：KR1020060072741
申请日：2006-08-01
Applicant: 한국화학연구원
IPC: H01L27/115 , H01L21/8247
CPC classification number: H01L21/28273 , H01L21/0226
Abstract: A method for fabricating an iron oxide thin film for a non-volatile ReRAM(resistance random access memory) device by a chemical deposition method is provided to embody an excellent resistance switching phenomenon by fabricating an iron oxide thin film having low surface roughness, a uniform growth surface and no carbon contamination. A substrate is introduced into a chemical deposition reactor. A Fe source and an O source are supplied to fabricate a FexOy thin film. The Fe source and the O source are supplied by a MOCVD(metal organic chemical vapor deposition) method for simultaneously supplying the Fe source and the O source or by an ALD(atomic layer deposition) method for alternately supplying the Fe source and the O source.
Abstract translation: 提供了一种通过化学沉积方法制造用于非挥发性ReRAM（电阻随机存取存储器）的氧化铁薄膜的方法，以通过制造具有低表面粗糙度，均匀的氧化铁薄膜来体现出优异的电阻切换现象 生长表面无碳污染。 将基底引入化学沉积反应器。 供应Fe源和O源以制造FexOy薄膜。 Fe源和O源通过用于同时供应Fe源和O源的MOCVD（金属有机化学气相沉积）方法或通过用于交替地供应Fe源和O源的ALD（原子层沉积）方法来提供 。
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公开(公告)号：KR100695575B1
公开(公告)日：2007-03-14
申请号：KR1020060031622
申请日：2006-04-06
Applicant: 한국화학연구원
Abstract: A novel erbium oxide precursor material is provided to show excellent thermal stability and volatility by coordinating only oxygen and nitrogen atom ligand with erbium, be less sensitive to moisture and favorable to store, thereby being usefully used for preparing a good quality oxide film. The erbium oxide precursor material is represented by the formula(1), Er[O-A-N(R^3)-B-NR^1R^2]3, and is prepared by reacting a erbium compound represented by the formula(3), ErCl3, with an alkali metal salt compound represented by the formula(4), M[N(Si(CH3)3)2], to obtain a compound represented by the formula(5), M[N(Si(CH3)3)2]3, and then reacting the compound of the formula(5) with an alcohol compound represented by the formula(6), HO-A-N(R^3)-B-NR^1R^2, where M is Li, Na, or K, A is C2-5 alkylene, B is C1-4 alkylene, the A and B is able to be further substituted by at least one linear or branched C1-5 alkyl, and each R^1, R^2 and R^ is independently H or linear or branched C1-5 alkyl.
Abstract translation: 提供了一种新型的氧化铒前体材料，通过仅使氧和氮原子配体与铒配位，表现出优异的热稳定性和挥发性，对湿气不敏感并且有利于储存，由此可用于制备优质氧化物膜。 氧化铒前体材料由式（1）表示，Er [OAN（R 3）-B-NR 1 R 2] 3，并且通过使由式（3）表示的铒化合物，ErCl 3 与由式（4）表示的碱金属盐化合物M [N（Si（CH 3）3）2]反应，以获得由式（5）表示的化合物，M [N（Si（CH 3）3） 2] 3，然后使式（5）化合物与式（6）代表的醇化合物HO-AN（R 3）-B-NR 2 R 1 2（其中M为Li，Na ，或K，A是C 2-5亚烷基，B是C 1-4亚烷基，A和B能够被至少一个直链或支链C 1-5烷基进一步取代，并且各R 1，R 2和 R 1独立地为H或直链或支链的C 1-5烷基。
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公开(公告)号：KR100695571B1
公开(公告)日：2007-03-14
申请号：KR1020060031630
申请日：2006-04-06
Applicant: 한국화학연구원
Abstract: A novel praseodymium oxide precursor material is provided not to cause contamination of carbon or halogen and to improve thermal stability and volatility by coordinating oxygen and nitrogen atom ligand with praseodymium. The praseodymium oxide precursor material is represented by the formula(1), Pr[N(Si(CH3)3)2]x[O-A-N(R^3)-B-NR^1R^2]_3-x, and is prepared by reacting a compound represented by the formula(5), Pr[N(Si(CH3)3)2]3, obtained by reacting a praseodymium compound represented by the formula(3), PrCL3, with an alkali metal salt compound represented by the formula(4), M[N(Si(CH3)3)2]3, with an alcohol compound represented by the formula(6), HO-A-N(R^3)-B-NR^1R^2, where M is Li, Na, or K, A is C2-5 alkylene, B is C1-4 alkylene, the A and B is able to be further substituted by at least one linear or branched C1-5 alkyl, each R^1, R^2 and R^ is independently H or linear or branched C1-5 alkyl, and x is an 0 or 1. To grow the praseodymium oxide, the praseodymium oxide precursor material is deposited using metal organic chemical vapor deposition(MOCVD) or atomic layer deposition(ALD).
Abstract translation: 提供新颖的氧化镨前体材料不会引起碳或卤素的污染，并通过使氧和氮原子配体与镨配位来改善热稳定性和挥发性。 氧化镨前体材料由式（1）表示，Pr [N（Si（CH 3）3）2] x [OAN（R ^ 3）-B-NR ^ 1R ^ 2] _3-x， （3）表示的镨化合物PrCL3与由式（5）表示的化合物Pr [N（Si（CH3）3）2] 3反应而得到的碱金属盐化合物 （6）代表的醇化合物HO-AN（R 3）-B-NR 1 R 2的式（4），M [N（Si（CH 3）3）2] 3，其中 M是Li，Na或K，A是C 2-5亚烷基，B是C 1-4亚烷基，A和B可以进一步被至少一个直链或支链C 1-5烷基取代，每个R 1， R 2和R 3独立地为H或直链或支链的C 1-5烷基，并且x为0或1.为了生长氧化镨，使用金属有机化学气相沉积（MOCVD）或原子法沉积氧化镨前体材料 层沉积（ALD）。
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公开(公告)号：KR100684992B1
公开(公告)日：2007-02-22
申请号：KR1020060031406
申请日：2006-04-06
Applicant: 한국화학연구원
IPC: C01F17/00
Abstract: A lanthanum complex represented by specific formula as precursor of lanthanum oxide thin film is provided to show thermal stability and increased volatile property advantageous to form the thin film of lanthanum oxide with high quality by reacting lanthanum compound with alkali metal salt compound then substitution reacting the reactive product with alcohol compound. The lanthanum oxide precursor is represented by a formula of La[O-A-N(R^3)-B-NR(^1)R(^2)]3 wherein A is C2 to C5 alkylene; B is C1-C4 alkylene; A and B are substituted by at least one of linear or branched alkyl group; and R^1, R^2 and R^3 are independently H or C1 to C5 linear or branched alkyl group. More particularly, the lanthanum oxide precursor is represented by a formula of La[OCR(^4)R(^5)(CH2)mN(R(^3))-(CH2)nNR(^1)R(^2)]3 wherein R^1,R^2,R^3,R^4 and R^5 are independently H or C1 to C5 linear or branched alkyl group, and m and n are integer of 1 to 4. The lanthanum oxide precursor is grown into lanthanum oxide by MOCVD or ALD.
Abstract translation: 提供由具体化学式表示的作为氧化镧薄膜的前体的镧络合物以显示热稳定性和增加的挥发性，其有利于通过使镧化合物与碱金属盐化合物反应而形成具有高质量的氧化镧薄膜， 产品与酒精化合物。 氧化镧前体由式La [O-A-N（R 3）-B-NR（1）R（2）] 3表示，其中A为C 2至C 5亚烷基; B是C1-C4亚烷基; A和B被至少一个直链或支链烷基取代; 并且R 1，R 2和R 3独立地为H或C 1至C 5直链或支链烷基。 更具体地说，氧化镧前体由式La [OCR（R 4）R（R 5）（CH 2）mN（R（R 3）） - （CH 2）n NR（R 1）R（R 2） ] 3其中R 1，R 2，R 3，R 4和R 5独立地为H或C 1至C 5直链或支链烷基，并且m和n为1至4的整数。氧化镧前体 通过MOCVD或ALD生长成氧化镧。
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公开(公告)号：KR100634814B1
公开(公告)日：2006-10-16
申请号：KR1020050030475
申请日：2005-04-12
Applicant: 한국화학연구원
IPC: C07F7/28
Abstract: An organo-titanium compound is provided to be thermally stable and high volatile, thereby being used for high quality titanium oxide film. The organo-titanium compound is represented by the formula(1) and prepared by reacting an amido compound of titanium represented by the formula(2), Ti(NR'_2)4, with an alcohol compound represented by the formula(3), HOCR^1R^2R^3, or by reacting titanium chloride represented by the formula(4), TiCl4, with an alkali metal salt of alcohol represented by the formula(5), M'OCR^1R^2R^3. In the formulae(1) to (5), each R^1, R^2 and R^3 is independently C1-4 linear or branched alkyl, provided that not all the R^1, R^2 and R^3 are methyl, R' is methyl or ethyl, and M' is Li, Na or K.
Abstract translation: 有机钛化合物提供热稳定性和高挥发性，由此用于高质量氧化钛膜。 有机钛化合物由式（1）表示并通过使由式（2）表示的钛的酰氨基化合物Ti（NR'2）4与由式（3）表示的醇化合物反应而制备， （4）表示的氯化钛TiCl 4与由式（5）表示的醇的碱金属盐M'OCR 1 R 2 R 3 3反应。 在式（1）至（5）中，每个R 1，R 2和R 3独立地为C 1-4直链或支链烷基，条件是不是所有R 1，R 2和R 3是 甲基，R'是甲基或乙基，并且M'是Li，Na或K.
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