公开(公告)号：SG188356A1

公开(公告)日：2013-04-30

申请号：SG2013015516

申请日：2011-08-25

Applicant: LAM RES CORP

Inventor： DE LA LLERA ANTHONY ,  MANKIDY PRATIK ,  KELLOGG MICHAEL C ,  DHINDSA RAJINDER

Abstract: Abstract A showerhead electrode, a gasket set and an assembly thereof in plasma reaction chamber for etching semiconductor substrates are provided with improved a gas injection hole pattern, positioning accuracy and reduced warping, which leads to enhanced uniformity of plasma processing rate. A method of assembling the inner electrode and gasket set to a supporting member includes simultaneous engagement of cam locks.

公开(公告)号：MY146761A

公开(公告)日：2012-09-14

申请号：MYUI20085125

申请日：2008-12-18

Applicant: LAM RES CORP

Inventor： KADKHODAYAN BABAK ,  DHINDSA RAJINDER ,  LLERA ANTHONY DE LA ,  KELLOGG MICHAEL C

IPC: C23C16/50

Abstract: A SHOWERHEAD ELECTRODE INCLUDES INNER AND OUTER STEPS AT AN OUTER PERIPHERY THEREOF, THE OUTER STEP COOPERATING WITH A CLAMP RING WHICH MECHANICALLY ATTACHES THE ELECTRODE TO A BACKING PLATE.

公开(公告)号：SG170030A1

公开(公告)日：2011-04-29

申请号：SG2011013406

申请日：2007-02-16

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  TAKESHITA KENJI ,  MARAKHTANOV ALEXEI ,  FISCHER ANDREAS

Abstract: Broadly speaking, the present invention fills these needs by providing an improved chamber cleaning mechanism. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an bottom electrode, wherein the bottom electrode is configured to receive a substrate. The plasma processing chamber includes a top electrode assembly with a top electrode and an inductive coil surrounding the top electrode. The inductive coil is configured to convert a gas into a plasma within a region defined within the chamber, wherein the region is outside an area defined above a top surface of the bottom electrode. Figure 1A

公开(公告)号：SG169982A1

公开(公告)日：2011-04-29

申请号：SG2011010584

申请日：2007-02-15

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER

Abstract: Broadly speaking, the embodiments of the present invention provide an improved chamber cleaning mechanism, apparatus and method. The present invention can also be used to provide additional knobs to tune the etch processes. In one embodiment, a plasma processing chamber configured to generate a plasma includes a bottom electrode assembly with an inner bottom electrode and an outer bottom electrode disposed outside of the inner bottom electrode, wherein the inner bottom electrode is configured to receive a substrate. The plasma processing chamber also includes a top electrode assembly with a top electrode, wherein the top capacitive electrode is disposed directly above the inner and outer bottom electrodes.

公开(公告)号：AT453206T

公开(公告)日：2010-01-15

申请号：AT01979979

申请日：2001-10-10

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  LENZ ERIC

IPC: H01J37/32 ,  H01L21/3065

Abstract: A plasma discharge electrode having a front surface with a central portion thereof including gas outlets discharging a process gas which forms a plasma and a peripheral portion substantially surrounding the gas outlets. The peripheral portion has at least one step for controlling a density of the plasma formed by the electrode. The electrode can be used as the grounded upper electrode in a parallel plate plasma processing apparatus such as a plasma etching apparatus. The geometric features of the step and of a corresponding edge ring on the lower electrode can be varied to achieve the desired etch rate profile across a wafer surface.

公开(公告)号：DE60221535T2

公开(公告)日：2008-04-17

申请号：DE60221535

申请日：2002-08-08

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER ,  SRINIVASAN MUKUND ,  LENZ ERIC ,  LI LUMIN

IPC: H01J37/32

Abstract: A vacuum plasma chamber for processing a workpiece includes first and second electrodes for electrical coupling with gas in the chamber and respectively connected to first and second relatively high and low frequency RF sources. The chamber includes a wall at a reference potential and a plasma confinement region spaced from the wall. A filter arrangement connected to the sources and the electrodes enables current from the first source to flow to the first electrode, prevents the substantial flow of current from the first source to the second electrode and the second source, and enables current from the second source to flow to the first and second electrodes and prevents the substantial flow of current from the second source to the first source.

公开(公告)号：SG133600A1

公开(公告)日：2007-07-30

申请号：SG2007045271

申请日：2004-08-20

Applicant: LAM RES CORP US

Inventor： DHINDSA RAJINDER ,  SADJADI REZA S M ,  KOZAKEVICH FELIX ,  TRUSSELL DAVE ,  LI LUMIN ,  LENZ ERIC ,  RUSU CAMELIA ,  SRINIVASAN MUKUND ,  EPPLER AARON ,  TIETZ JIM ,  MARKS JEFFREY

IPC: H01J37/32

Abstract: A method of processing a workpiece (18) with a plasma in a vacuum plasma processing chamber (10) having a bottom electrode (13) below the workpiece, comprising the step of exciting a plasma with electric energy at several frequencies, i.e. three or more, such that the excitation of the plasma by applying energy at the several frequencies simultaneously causes several different phenomena to occur in the plasma, wherein the phenomena affct plasma ion energy, plasma ion densityand plasma chemistry. An apparatus for carrying out this method comprises an electric energy source arrangement (51) for supplying the several frequencies (F1, F2, F3) to the bottom electrode.

公开(公告)号：DE69734151T2

公开(公告)日：2006-06-29

申请号：DE69734151

申请日：1997-03-27

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER

IPC: H01L21/02 ,  C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/22 ,  H01L21/324 ,  H01L21/683 ,  H01L35/30 ,  H01L35/32

公开(公告)号：DE69734151D1

公开(公告)日：2005-10-13

申请号：DE69734151

申请日：1997-03-27

Applicant: LAM RES CORP

Inventor： DHINDSA RAJINDER

IPC: C23C16/458 ,  C23C16/46 ,  H01L21/00 ,  H01L21/22 ,  H01L21/324 ,  H01L21/683 ,  H01L35/30 ,  H01L35/32

公开(公告)号：SG10201404264RA

公开(公告)日：2014-10-30

申请号：SG10201404264R

申请日：2010-06-29

Applicant: LAM RES CORP

Inventor： STEVENSON TOM ,  BYUN DANIEL ,  ULLAL SAURABH ,  KADKHODAYAN BABAK ,  DHINDSA RAJINDER

Abstract: An electrostatic chuck assembly is provided comprising a ceramic contact layer, a patterned bonding layer, an electrically conductive base plate, and a subterranean arc mitigation layer. The ceramic contact layer and the electrically conductive base plate cooperate to define a plurality of hybrid gas distribution channels formed in a subterranean portion of the electrostatic chuck assembly. Individual ones of the hybrid gas distribution channels comprise surfaces of relatively high electrical conductivity presented by the electrically conductive base plate and relatively low electrical conductivity presented by the ceramic contact layer. The subterranean arc mitigation layer comprises a layer of relatively low electrical conductivity and is formed over the relatively high conductivity surfaces of the hybrid gas distribution channels in the subterranean portion of the electrostatic chuck assembly. Semiconductor wafer processing chambers are also provided.