플라즈마처리장치
    3.
    发明授权

    公开(公告)号:KR100349064B1

    公开(公告)日:2003-01-24

    申请号:KR1019940040232

    申请日:1994-12-31

    CPC classification number: H01J37/32623

    Abstract: A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

    Abstract translation: 等离子体处理装置包括腔室和平行地设置在腔室中以预定间隔彼此相对的上电极和下电极,用于限定电极之间的等离子体产生区域。 待处理物体安装在下电极上。 将RF功率提供给电极,使得在电极之间产生等离子体,由此对待处理的对象执行等离子体处理。 在腔室内的等离子体产生区域周围提供圆柱形接地电极,用于将等离子体封闭在等离子体产生区域中,并且具有用于使处理气体通过的多个通孔。

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