-
公开(公告)号：KR1020060008952A
公开(公告)日：2006-01-27
申请号：KR1020057020693
申请日：2005-04-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , B08B1/04 , H01L21/67046
Abstract: A board cleaning apparatus and a board processing method are provided. A brush (3) is brought into contact with a board W while the board W is being rotated, and a cleaning position Sb of the brush (3) is shifted relatively to the board W, directing to a circumference part from a center part of the board W. A process fluid composed of a liquid droplet and a gas is jetted from a two fluid nozzle (5) to the board W. A cleaning position Sn of the two fluid nozzle (5) is shifted relatively to the board W, directing to the circumference part from the center part of the board W, and while the cleaning position Sb of the brush (3) is being shifted to the circumference part from the center part, the cleaning position Sn of the two fluid nozzle (5) is arranged on a side closer to a center Po than the cleaning position Sb of the brush (3). Thus, contaminants are prevented from transferring from the brush to contaminate the wafer.
Abstract translation: 提供了一种板清洁装置和板处理方法。 在板W旋转的同时，电刷（3）与电路板W接触，并且电刷（3）的清洁位置Sb相对于电路板W移动，从电路板W的中心部分引导到周边部分 由液体液滴和气体组成的工艺流体从两个流体喷嘴（5）喷射到板W.两个流体喷嘴（5）的清洁位置Sn相对于板W移动， 从电路板W的中心部分引导到圆周部分，并且当刷子（3）的清洁位置Sb从中心部分移动到周边部分时，两个流体喷嘴（5）的清洁位置Sn， 布置在比刷子（3）的清洁位置Sb更靠近中心Po的一侧。 因此，防止污染物从刷子转移以污染晶片。
-
公开(公告)号：KR100648165B1
公开(公告)日：2006-11-28
申请号：KR1020057020693
申请日：2005-04-05
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , B08B1/04 , H01L21/67046
Abstract: 기판 세정 장치 및 기판 처리 방법은 기판(W)을 회전시키면서 브러시(3)를 기판(W)에 접촉시키고, 브러시(3)에 의한 세정 위치(Sb)를 기판(W)의 중심부로부터 주연부를 향해 기판(W)에 대해 상대적으로 이동시키며, 이류체 노즐(5)로부터 액적과 가스로 이루어지는 처리 유체를 기판(W)에 분사시키고, 이류체 노즐(5)에 의한 세정 위치(Sn)를 기판(W)의 중심부로부터 주연부를 향해 기판(W)에 대해 상대적으로 이동시키며, 상기 브러시(3)에 의한 세정 위치(Sb)를 기판(W)의 중심부로부터 주연부를 향해 이동시키는 동안, 상기 이류체 노즐(5)에 의한 세정 위치(Sn)를 상기 브러시(3)에 의한 세정 위치(Sb)보다 중심(P0) 측에 배치함으로써 브러시로부터 오염물이 전사되어 웨이퍼가 더러워지는 것을 방지할 수 있다.
-
公开(公告)号：KR1020040028964A
公开(公告)日：2004-04-03
申请号：KR1020047001485
申请日：2002-08-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02
CPC classification number: H01L21/67248 , H01L21/67051 , H01L21/6708
Abstract: 기판의 표면에 산화막을 형성할 때, 종래의 것보다도 얇은 산화막을, 균일한 막 두께로 형성할 수 있는 기판 처리 장치 및 기판 처리 방법을 제공한다.
기판(W)에 처리액을 공급하여 처리하는 기판 처리 장치(12)에 있어서, 상기 처리액의 온도를 조정하는 온도 조정 수단(133)과, 상기 기판(W)의 이면에 근접하여 배치되는 언더 플레이트(77)의 온도를 조절하는 온도 조절 기구(115)를 구비했다.Abstract translation: 提供一种基板处理装置和基板处理方法，其中当在基板的正面上形成氧化物膜时，可以以均匀厚度形成比常规膜更薄的氧化物膜。 一种用于通过供给处理液来处理基板（W）的基板处理设备（12），包括：温度调节器（133），用于调节所述处理液的温度; 和底板温度调节器（115），以调节放置在所述基板W的背面附近的底板（77）的温度。
-
Patent Agency Ranking
公开(公告)号：KR100929809B1
公开(公告)日：2009-12-07
申请号：KR1020020049080
申请日：2002-08-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , B08B3/04 , Y10S134/902
Abstract: A substrate processing apparatus includes a substrate processing part 46 for processing a substrate by a processing liquid and a processing-liquid recovery path 137 allowing of a passage of the processing liquid discharged from the substrate processing part 46 . The processing-liquid recovery path 137 is provided with foreign substance removal lines 181, 182 including filters 200, 201 for removing an foreign substance from the processing liquid and cleaners 201, 211 for cleaning the filters 200, 201 respectively. With this constitution, it is possible to cancel the blocking of foreign substances in pipes etc. and also possible to lengthen the life span of the filters.
Abstract translation: 基板处理装置具备：利用处理液对基板进行处理的基板处理部46;以及使从基板处理部46排出的处理液通过的处理液回收路径137。 在处理液回收路径137中设置有包含用于从处理液中除去异物的过滤器200,201和用于分别清洁过滤器200,201的清洁器201,211的异物除去线181,182。 利用这种结构，可以取消管道中异物的堵塞等，并且还可以延长过滤器的使用寿命。
-
公开(公告)号：KR1020030016186A
公开(公告)日：2003-02-26
申请号：KR1020020049080
申请日：2002-08-20
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/304
CPC classification number: H01L21/67051 , B08B3/04 , Y10S134/902
Abstract: PURPOSE: To provide a substrate treatment apparatus and a substrate treatment process which dissolve clogging of foreign body in a line or the like, and prolong the lifetime or a filter. CONSTITUTION: A substrate treating device is provided with a substrate treatment part for treating a substrate with a treatment agent and a treatment agent recovering route 137 for passing the treating agent exhausted from the substrate treatment part. The treatment agent recovering route 137 is provided with foreign body removal lines 181, 182 which comprise filters 200, 210 for removing foreign bodies mixed with the treatment agent and cleaning means 201, 211 for cleaning the filters 200, 210.
Abstract translation: 目的：提供将线状物等异物堵塞，延长寿命或过滤器的基板处理装置和基板处理工序。 构成：基板处理装置具有用于处理基板的基板处理部，处理剂和处理剂回收路径137使得从基板处理部排出的处理剂通过。 处理剂回收路径137设置有异物去除管线181,182，其包括用于除去与处理剂混合的异物的过滤器200,210和用于清洁过滤器200,210的清洁装置201,211。
-
公开(公告)号：KR101940603B1
公开(公告)日：2019-01-21
申请号：KR1020177014067
申请日：2015-11-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/304 , H01L21/67
-
公开(公告)号：KR1020170075770A
公开(公告)日：2017-07-03
申请号：KR1020177014067
申请日：2015-11-10
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02 , H01L21/304 , H01L21/67
CPC classification number: H01L21/304 , H01L21/31
Abstract: 생산성을향상시키는것이다. 실시형태에따른기판처리방법은제거공정과세정공정과처리액공급공정을포함한다. 제거공정은휘발성분이휘발함으로써제 1 처리액이고화또는경화되어있음에따라막이형성되어있는기판으로부터고화또는경화된제 1 처리액을제거한다. 세정공정은제거공정후의기판을세정한다. 처리액공급공정은세정공정후의기판으로휘발성분이휘발함으로써고화또는경화되는제 2 처리액을공급한다.
Abstract translation: 从而提高生产力。 根据该实施例的基板处理方法包括去除处理，清洁处理和处理液供给处理。 由于挥发成分因挥发而挥发，所以第一工艺液体固化或固化，并且因此固化或硬化的第一工艺液体从其上形成膜的基板移除。 清洁过程在清除过程之后清洁基材。 处理液供应处理在清洁处理之后将通过挥发性组分的挥发而固化或硬化的第二处理液供应到基板中。
-
公开(公告)号：KR100915645B1
公开(公告)日：2009-09-04
申请号：KR1020047001485
申请日：2002-08-28
Applicant: 도쿄엘렉트론가부시키가이샤
IPC: H01L21/02
CPC classification number: H01L21/67248 , H01L21/67051 , H01L21/6708
Abstract: A substrate processing apparatus and a substrate processing method are provided wherein an oxide film which is thinner than the conventional films can be formed with uniform thickness when forming an oxide film on the front-side surface of a substrate. A substrate processing apparatus ( 12 ) for processing a substrate (W) by feeding a processing liquid comprises: a temperature regulator ( 133 ) to regulate the temperature of said processing liquid; and a underplate temperature adjuster ( 115 ) to adjust the temperature of an underplate ( 77 ) which is placed in proximity to the backside surface of said substrate W.
-
-
-
-
-
-
-
Search Results
8
records
(took 0.02 seconds)
