中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

11 records (took 0.021 seconds)

    성막 장치, 성막 시스템 및 성막 방법
    1.
    发明公开
    성막 장치, 성막 시스템 및 성막 방법 无效
    沉积装置，沉积系统和沉积方法

    公开(公告)号：KR1020090031616A

    公开(公告)日：2009-03-26

    申请号：KR1020097002799

    申请日：2007-08-08

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 마츠바야시신지 ,  모야마카즈키 ,  토베야스히로

    IPC: C23C14/56 ,  C23C14/12 ,  C23C14/34 ,  H01L51/50

    CPC classification number: C23C14/568 ,  H01L51/56 ,  H01L51/0008 ,  H01L51/5012 ,  H01L51/5056 ,  H01L51/5072

    Abstract: [PROBLEMS] A film forming system in which mutual contamination in each layer formed in a process of producing an organic EL element etc. is avoided, that has a small footprint, and that has high productivity. [MEANS FOR SOLVING PROBLEMS] A film forming device (13) for forming a film on a substrate. The film forming device (13) has, inside a processing container (30), a first film forming mechanism (35) for forming a first layer and a second film forming mechanism (36) for forming a second layer. A gas discharge opening (31) for reducing the pressure in the processing container (30) is provided in the film forming device (13), and the first film forming mechanism (35) is located closer to the gas discharge opening (31) than the second film forming mechanism (36). The first film forming mechanism (35) forms, for example, the first layer on the substrate by vapor deposition, and the second film forming mechanism (36) forms, for example, the second layer on the substrate by spattering.

    Abstract translation: [问题]避免了在制造有机EL元件等的过程中形成的每个层中的相互污染的薄膜形成系统，具有小的占地面积，并且具有高的生产率。 解决问题的手段一种用于在基板上形成膜的成膜装置（13）。 成膜装置（13）在处理容器（30）内部具有用于形成第一层的第一成膜机构（35）和用于形成第二层的第二成膜机构（36）。 在成膜装置（13）中设置有用于降低加工容器（30）的压力的排气口（31），第一成膜机构（35）位于比气体排出口（31）更靠近排气口 第二成膜机构（36）。 第一成膜机构（35）通过气相沉积形成例如基板上的第一层，第二成膜机构（36）通过溅射形成例如基板上的第二层。

    플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
    2.
    发明公开
    플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 有权
    等离子体加工设备，等离子体加工机和储存介质

    公开(公告)号：KR1020090117828A

    公开(公告)日：2009-11-12

    申请号：KR1020097020482

    申请日：2008-02-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 이시카와히라쿠 ,  토베야스히로

    IPC: H05H1/46 ,  H01L21/3065 ,  C23C16/511

    CPC classification number: C23C16/511 ,  H01J37/32192 ,  H01J37/3266

    Abstract: A plasma processing apparatus comprises a processing vessel for containing a work piece, a microwave generating section for generating a microwave, a waveguide for guiding a microwave generated from the microwave generating section toward the processing vessel, a plane antenna having a plurality of microwave radiation holes for radiating the microwave introduced by the waveguide toward the processing vessel, a microwave transmissive dielectric plate constituting the top wall of the processing vessel and transmitting the microwave passed through the microwave radiation holes of the plane antenna, a processing gas introducing mechanism for introducing a processing gas into the processing vessel, and a magnetic field-forming section provided above the plane antenna and forming a magnetic field in the processing vessel in order to control the characteristics of the plasma of the processing gas produced in the processing vessel by the microwave.

    Abstract translation: 一种等离子体处理装置，包括用于容纳工件的处理容器，用于产生微波的微波产生部，用于将从微波产生部产生的微波导向处理容器的波导，具有多个微波放射孔的平面天线 用于将由波导引入的微波辐射到处理容器，构成处理容器的顶壁的微波透射电介质板，并传输通过平面天线的微波辐射孔的微波;处理气体导入机构，用于引入处理 气体进入处理容器，以及设置在平面天线之上并在处理容器中形成磁场的磁场形成部分，以便通过微波控制处理容器中产生的处理气体的等离子体的特性。

    기판의 처리 장치
    3.
    发明公开
    기판의 처리 장치 有权
    基板加工设备

    公开(公告)号：KR1020090057021A

    公开(公告)日：2009-06-03

    申请号：KR1020097005532

    申请日：2007-11-29

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 토베야스히로 ,  가와카미사토루 ,  마츠바야시신지

    IPC: H01L21/677 ,  H02N13/00 ,  C23C16/44 ,  C23C16/458

    CPC classification number: H01L21/67709 ,  C23C14/12 ,  C23C14/568 ,  F16C32/0434 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67721 ,  H01L21/6776 ,  H02N15/00 ,  H01L21/67196 ,  H01L21/6831

    Abstract: [PROBLEMS] To provide a mechanism for transferring a substrate without generating contamination, by using a relatively simple structure inside a depressurized processing container. [MEANS FOR SOLVING PROBLEMS] A processing apparatus (13) for processing a substrate (G) is provided with a processing container (30) for processing the substrate (G) inside, a depressurizing mechanism (36) for depressurizing inside the processing container (30), and a transfer mechanism (40) for transferring the substrate (G) arranged inside the processing container (30). The transfer mechanism (40) is provided with a guide member (41), a stage (42) for holdingthe substrate (G), a driving member (50) for moving the stage (42), and a moving member (43) which supports the stage (42) and moves along the guide member (41). The guide member (41) and the moving member (43) are maintained not to be brought into contact with each other by using a repulsive force of magnets (47, 48).

    Abstract translation: 为了提供一种用于转移衬底而不产生污染的机构，通过在减压处理容器内使用相对简单的结构。 解决问题的手段用于处理基板（G）的处理装置（13）设置有用于在内部处理基板（G）的处理容器（30），用于在处理容器内部进行减压的减压机构（36） 30），以及用于转印布置在处理容器（30）内部的基板（G）的转印机构（40）。 传送机构（40）设置有引导部件（41），用于保持基板（G）的台（42），用于移动台（42）的驱动构件（50）和移动构件（43），移动构件 支撑台（42）并沿着引导构件（41）移动。 通过使用磁体（47,48）的排斥力，保持引导构件（41）和移动构件（43）不会彼此接触。

    기판의 처리 장치
    5.
    发明授权
    기판의 처리 장치 失效

    公开(公告)号：KR101021903B1

    公开(公告)日：2011-03-18

    申请号：KR1020090062023

    申请日：2009-07-08

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 토베야스히로 ,  손료

    IPC: H01L51/56 ,  H01L21/02 ,  H05B33/10

    CPC classification number: C23C14/541 ,  C23C14/568 ,  C23C16/54

    Abstract: (과제) 감압된 처리 용기의 내부에 있어서, 오염을 발생시키지 않고 기판을 반송시킨다.
    (해결 수단) 기판(G)을 처리하는 처리 장치(13)로서, 기판(G)을 수납하는 처리 용기(30)와, 처리 용기(30)의 내부를 감압시키는 감압 기구(36)과, 처리 용기(30)의 내부에 배치된, 기판(G)을 지지하는 스테이지(41)와, 스테이지(41)를 직진 운동시키는 직진 운동 기구(43)와, 스테이지(41)의 회전을 방지하는 평행 링크 기구(44, 45)를 구비하고, 처리 용기(30)의 내부의 분위기와 차단된 공간부(100)가, 스테이지(41)의 내부에 형성되고, 공간부(100)와 처리 용기(30)의 외부와의 분위기를 연통시키는 통기 경로(110)가, 평행 링크 기구(44, 45)의 내부에 형성되어 있다.
    처리 용기, 통기 경로, 평행 링크 기구

    기판의 처리 장치
    7.
    发明公开
    기판의 처리 장치 有权
    기판의처리장치

    公开(公告)号：KR1020120026135A

    公开(公告)日：2012-03-16

    申请号：KR1020127002464

    申请日：2007-11-29

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 토베야스히로 ,  가와카미사토루 ,  마츠바야시신지

    IPC: H01L21/677 ,  H01L21/683 ,  F16C32/04 ,  C23C16/44

    CPC classification number: H01L21/67709 ,  C23C14/12 ,  C23C14/568 ,  F16C32/0434 ,  H01L21/67167 ,  H01L21/67173 ,  H01L21/67721 ,  H01L21/6776 ,  H02N15/00 ,  H01L21/6831

    Abstract: A processing apparatus for processing a substrate G includes a processing chamber for processing the substrate; a depressurizing mechanism reducing an internal pressure of the processing chamber; and a transfer mechanism disposed in the processing chamber to transfer the substrate, wherein the transfer mechanism includes: a guide member; a stage for holding the substrate; a driving member for moving the stage; and a movable member supporting the stage and moving along the guide member. The guide member and the movable member are maintained so as not to contact each other by a repulsive force of magnets.

    Abstract translation: 用于处理基板G的处理装置包括用于处理基板的处理室; 降低处理室的内部压力的减压机构; 以及传送机构，其设置在所述处理室中以传送所述基板，其中所述传送机构包括：引导构件; 用于保持衬底的台; 用于移动平台的驱动构件; 以及可移动构件，支撑台并沿着引导构件移动。 引导构件和可移动构件被保持为不通过磁体的排斥力彼此接触。

    플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
    10.
    发明授权
    플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체 有权
    等离子体加工设备，等离子体加工机和储存介质

    公开(公告)号：KR101098314B1

    公开(公告)日：2011-12-26

    申请号：KR1020097020482

    申请日：2008-02-26

    Applicant: 도쿄엘렉트론가부시키가이샤

    Inventor： 이시카와히라쿠 ,  토베야스히로

    IPC: H05H1/46 ,  H01L21/3065 ,  C23C16/511

    CPC classification number: C23C16/511 ,  H01J37/32192 ,  H01J37/3266

    Abstract: 개시되는플라즈마처리장치는, 피처리체를수용하는처리용기와, 마이크로파를발생시키는마이크로파발생부와, 마이크로파발생부에서발생된마이크로파를처리용기를향해유도하는도파로와, 도파로에유도된마이크로파를처리용기를향해방사하는복수의마이크로파방사홀을가지는도체로이루어지는평면안테나와, 처리용기의천벽(天壁)을구성하고평면안테나의마이크로파방사홀을통과한마이크로파를투과하는, 유전체로이루어지는마이크로파투과판과, 처리용기내로처리가스를도입하는처리가스도입기구와, 평면안테나의상방에설치되어처리용기내에자계를형성하고당해자계에의해마이크로파에의해처리용기내에생성되는처리가스의플라즈마특성을제어하는자계형성부를구비한다.

Patent Agency Ranking