유기발광 디스플레이 장치 및 구동방법
    4.
    发明公开
    유기발광 디스플레이 장치 및 구동방법 有权
    有机发光二极管显示及其驱动方法

    公开(公告)号:KR1020090128888A

    公开(公告)日:2009-12-16

    申请号:KR1020080054863

    申请日:2008-06-11

    Abstract: PURPOSE: An organic light emitting display device and a driving method thereof are provided to display the images with various colors by the gray scale of various steps by inserting at least one additional bit signal for an additional sub frame. CONSTITUTION: A driving transistor(T2) switches the current supply to an OLED by an image signal. A current controller includes a plurality of current control transistors(T3,T4) controlling an amount of currents to the OLED. A driving transistor operates in a linear region. Current control transistors operate at a saturation region. A storage capacitor stores an image signal. A switching transistor stores the image signal in a storage capacitor.

    Abstract translation: 目的:提供一种有机发光显示装置及其驱动方法,通过插入附加子帧的至少一个附加位信号,通过各种步骤的灰度显示各种颜色的图像。 构成:驱动晶体管(T2)通过图像信号将电流源切换到OLED。 电流控制器包括控制到OLED的电流量的多个电流控制晶体管(T3,T4)。 驱动晶体管在线性区域中工作。 电流控制晶体管在饱和区域工作。 存储电容器存储图像信号。 开关晶体管将图像信号存储在存储电容器中。

    박막 트랜지스터 및 그 제조 방법
    5.
    发明公开
    박막 트랜지스터 및 그 제조 방법 有权
    薄膜晶体管及其制造方法

    公开(公告)号:KR1020080076292A

    公开(公告)日:2008-08-20

    申请号:KR1020070016033

    申请日:2007-02-15

    Abstract: A thin film transistor and a manufacturing method thereof are provided to change doping level for respective semiconductor layer regions by adjusting thickness and location of first, second, and third insulation layers. A thin film transistor comprises a lower structure(11), a semiconductor layer(12), first and second insulation layers(14a,14b), and a third insulation layer(16), and a gate electrode layer(17). The semiconductor layer includes a plurality of doped regions(12b,12c,12d) on the lower structure. The first and second insulation layers are formed on the semiconductor layer, separated from each other. The third insulation layer is formed on the first and second insulation layers. The gate electrode layer is formed on the third insulation layer between the first and second insulation layers. The width of the third insulation layer is longer than that between the first and second insulation layers and shorter than that between the left part of the first insulation layer and the right part of the second insulation layer.

    Abstract translation: 提供薄膜晶体管及其制造方法,通过调整第一,第二和第三绝缘层的厚度和位置来改变各半导体层区域的掺杂水平。 薄膜晶体管包括下部结构(11),半导体层(12),第一和第二绝缘层(14a,14b)以及第三绝缘层(16)和栅电极层(17)。 半导体层包括在下部结构上的多个掺杂区域(12b,12c,12d)。 第一绝缘层和第二绝缘层形成在半导体层上,彼此分离。 第三绝缘层形成在第一和第二绝缘层上。 栅电极层形成在第一和第二绝缘层之间的第三绝缘层上。 第三绝缘层的宽度比第一绝缘层和第二绝缘层之间的宽度长,并且比第一绝缘层的左部分和第二绝缘层的右部分之间的宽度短。

    박막 패터닝 방법 및 이를 이용한 반도체소자의 제조방법

    公开(公告)号:KR101920711B1

    公开(公告)日:2018-11-22

    申请号:KR1020120004912

    申请日:2012-01-16

    Abstract: 박막패터닝방법및 이를이용한반도체소자의제조방법에관해개시되어있다. 개시된박막패터닝방법은별도의감광막없이박막자체를노광하고현상하여패터닝하는방법일수 있다. 상기박막패터닝방법은금속산화물의전구체를포함하는전구체용액을기판에도포하여박막을형성하는단계, 상기박막을연화건조(soft bake)하는단계, 상기박막을포토마스크를이용해서노광하는단계, 상기박막을현상하는단계및 상기현상된박막을경화건조(hard bake)하여패턴화된(patterned) 금속산화물박막을형성하는단계를포함할수 있다. 상기전구체는금속아세테이트(metal acetate), 예컨대, 아연아세테이트(zinc acetate) 계열의물질을포함할수 있고, 위방법으로형성된금속산화물박막은아연산화물(ZnO)을포함할수 있다. 상기연화건조(soft bake)는 50∼80℃정도의온도에서수행할수 있다. 상기노광은오존분위기에서자외선으로수행할수 있다.

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