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公开(公告)号：KR102230653B1
公开(公告)日：2021-03-23
申请号：KR1020130169391A
申请日：2013-12-31
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/786 , H01L21/336 , H01L29/36
CPC classification number: H01L29/78696 , H01L29/36
Abstract: 박막 트랜지스터 및 그 제조 방법이 개시된다. 개시된 박막 트랜지스터는 채널층이 게이트 전극과 상대적으로 가까운 제 1영역과 상대적으로 거리가 먼 제 2영역을 포함할 수 있으며, 채널층을 구성하는 물질 중 적어도 하나는 제 1영역보다 제 2영역에서의 농도가 더 클 수 있다. 채널층은 아연(Zn) 및 불소(F)를 포함할 수 있으며, 제 2영역에서의 불소의 농도가 제 1영역에서의 불소의 농도보다 클 수 있다.
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公开(公告)号：KR101472799B1
公开(公告)日：2014-12-16
申请号：KR1020080054863
申请日：2008-06-11
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
CPC classification number: G09G3/3233 , G09G3/2037 , G09G3/2081 , G09G2300/0842
Abstract: 디스플레이장치는 OLED(Organic Light Emitting Diode), 화상신호에의해상기 OLED에대한전류공급을스위칭하는드라이빙트랜지스터, 상기 OLED에대한전류의량을제어하는복수의전류제어트랜지스터를포함하는전류제어부;를구비한다. 이러한구조에따르면종래비해높은해상도와깊은색감표현이가능한디스플레이의구현이가능하다.
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公开(公告)号：KR1020090128888A
公开(公告)日：2009-12-16
申请号：KR1020080054863
申请日：2008-06-11
Applicant: 삼성전자주식회사 , 재단법인서울대학교산학협력재단
CPC classification number: G09G3/3233 , G09G3/2037 , G09G3/2081 , G09G2300/0842 , H01L27/3244 , H01L2027/11879 , H01L2227/323
Abstract: PURPOSE: An organic light emitting display device and a driving method thereof are provided to display the images with various colors by the gray scale of various steps by inserting at least one additional bit signal for an additional sub frame. CONSTITUTION: A driving transistor(T2) switches the current supply to an OLED by an image signal. A current controller includes a plurality of current control transistors(T3,T4) controlling an amount of currents to the OLED. A driving transistor operates in a linear region. Current control transistors operate at a saturation region. A storage capacitor stores an image signal. A switching transistor stores the image signal in a storage capacitor.
Abstract translation: 目的：提供一种有机发光显示装置及其驱动方法，通过插入附加子帧的至少一个附加位信号，通过各种步骤的灰度显示各种颜色的图像。 构成：驱动晶体管（T2）通过图像信号将电流源切换到OLED。 电流控制器包括控制到OLED的电流量的多个电流控制晶体管（T3，T4）。 驱动晶体管在线性区域中工作。 电流控制晶体管在饱和区域工作。 存储电容器存储图像信号。 开关晶体管将图像信号存储在存储电容器中。
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公开(公告)号：KR102144992B1
公开(公告)日：2020-08-18
申请号：KR1020130097345
申请日：2013-08-16
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , H01L21/336
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公开(公告)号：KR101980195B1
公开(公告)日：2019-05-21
申请号：KR1020120052212
申请日：2012-05-16
Applicant: 삼성전자주식회사 , 삼성디스플레이 주식회사
IPC: H01L29/786 , H01L21/336
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Patent Agency Ranking
公开(公告)号：KR101638978B1
公开(公告)日：2016-07-13
申请号：KR1020090067826
申请日：2009-07-24
Applicant: 삼성전자주식회사 , 성균관대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L29/7869
Abstract: 박막트랜지스터및 그제조방법이개시된다. 개시된박막트랜지스터는게이트; 게이트절연막; 제1산화물반도체층및 제2산화물반도체층을포함하는채널층; 상기채널층의양측에각각접촉형성된소스및 드레인;을포함하며, 상기제1산화물반도체층의결정립크기는상기제2산화물반도체층의결정립크기에비해상대적으로크다.
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公开(公告)号：KR1020140102086A
公开(公告)日：2014-08-21
申请号：KR1020130015531
申请日：2013-02-13
Applicant: 삼성전자주식회사
IPC: H01L21/336 , H01L29/786
CPC classification number: H01L29/78693 , H01L21/02381 , H01L21/02422 , H01L21/02521 , H01L21/02554 , H01L21/0257 , H01L21/02592 , H01L21/02631 , H01L21/02664 , H01L29/66969 , H01L29/7869 , H01L21/02565 , H01L21/265 , H01L29/66742
Abstract: A thin film, a method of forming the thin film, a semiconductor device including the thin film, and a method of manufacturing the semiconductor device are disclosed. The disclosed method of forming the thin film may include the step of forming a thin film containing metal oxynitride, and the step of treating the thin film with inert gas ions. The metal oxynitride may include zinc oxynitride (ZnOxNy). The inert gas ions may include at least one of Ar and Ne ions. The treating of the thin film with the inert gas ions may be performed by a sputtering process, a plasma treatment process, or the like. The thin film can be applied to a semiconductor device such as a transistor.
Abstract translation: 公开了薄膜，薄膜形成方法，包括该薄膜的半导体器件及其制造方法。 公开的形成薄膜的方法可以包括形成含有金属氮氧化物的薄膜的步骤，以及用惰性气体离子处理薄膜的步骤。 金属氮氧化物可以包括氮氧化锌（ZnO x N y）。 惰性气体离子可以包括Ar和Ne离子中的至少一种。 用惰性气体离子处理薄膜可以通过溅射工艺，等离子体处理工艺等进行。 该薄膜可以应用于诸如晶体管的半导体器件。
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公开(公告)号：KR1020140087830A
公开(公告)日：2014-07-09
申请号：KR1020120158528
申请日：2012-12-31
Applicant: 삼성전자주식회사
IPC: H01L21/31 , H01L29/786
CPC classification number: H01L21/02225 , H01L29/4908 , H01L29/51
Abstract: An insulating film forming method and a method for manufacturing a thin film transistor by using the same are disclosed. The disclosed insulating film forming method includes forming an insulating film on a substrate; removing the substrate by etching; transferring the insulating film from which the substrate is removed on a substrate for forming an electric device; and forming an insulating film.
Abstract translation: 公开了一种绝缘膜形成方法和使用该薄膜晶体管的方法。 所公开的绝缘膜形成方法包括在基板上形成绝缘膜; 通过蚀刻去除衬底; 在用于形成电气设备的基板上转印从其去除基板的绝缘膜; 并形成绝缘膜。
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公开(公告)号：KR1020140050993A
公开(公告)日：2014-04-30
申请号：KR1020120117503
申请日：2012-10-22
Applicant: 삼성전자주식회사 , 서울대학교산학협력단
IPC: H01L29/786
CPC classification number: H01L29/24 , H01L29/78696
Abstract: The present invention relates to a Zn compound semiconductor and a thin film transistor comprising the same. According to an embodiment of the present invention, the Zn compound semiconductor and the thin film transistor comprising the same include a Zn compound. The Zn compound semiconductor comprises Zn and nitrogen. According to an embodiment of the present invention, the Zn compound semiconductor comprises a Cl-added Zn oxynitride.
Abstract translation: 本发明涉及一种Zn化合物半导体及包括该化合物半导体的薄膜晶体管。 根据本发明的一个实施方案，Zn化合物半导体和包含该化合物半导体的薄膜晶体管包括Zn化合物。 Zn化合物半导体包含Zn和氮。 根据本发明的一个实施方案，Zn化合物半导体包括加入Cl的氮氧化锌。
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公开(公告)号：KR1020140003893A
公开(公告)日：2014-01-10
申请号：KR1020120071373
申请日：2012-06-29
Applicant: 삼성전자주식회사
IPC: H01L29/786
CPC classification number: H01L29/24 , H01L29/66742 , H01L29/66969 , H01L29/7869
Abstract: A disclosed transistor includes a channel layer including at least one oxynitride semiconductor among Hf and Zr; a source and a drain formed on both sides of the channel layer respectively; a gate corresponding to the channel layer; and a gate insulating layer formed between the channel layer and the gate.
Abstract translation: 公开的晶体管包括在Hf和Zr中包括至少一个氧氮化物半导体的沟道层; 分别形成在沟道层两侧的源极和漏极; 对应于沟道层的栅极; 以及形成在沟道层和栅极之间的栅极绝缘层。
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