公开(公告)号：KR20180021217A

公开(公告)日：2018-02-28

申请号：KR20187004578

申请日：2011-03-17

Applicant: ASML NETHERLANDS BV

Inventor： YAKUNIN ANDREI ,  BANINE VADIM ,  LOOPSTRA ERIK ,  VAN DER SCHOOT HARMEN ,  STEVENS LUCAS ,  VAN KAMPEN MAARTEN

IPC: G03F1/62 ,  C01B32/20 ,  G02B5/08 ,  G02B5/20 ,  G03F1/24 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/64 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/20 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/204 ,  G02B5/208 ,  G02B27/0006 ,  G03B27/54 ,  G03F1/24 ,  G03F1/62 ,  G03F7/70058 ,  G03F7/702 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70983 ,  G21K1/062 ,  G21K2201/061 ,  H01B1/04 ,  H01B1/24

Abstract: 리소그래피장치는방사선빔을생성하도록구성된방사선소스, 및패터닝디바이스를지지하도록구성된지지체를포함한다. 패터닝디바이스는패터닝된방사선빔을형성하기위해방사선빔에패턴을부여하도록구성된다. 방사선소스와패터닝디바이스사이에는챔버가위치된다. 챔버는방사선빔을반사시키도록구성된적어도 1 이상의광학구성요소를포함하고, 방사선소스로부터의방사선이이를통과하는것을허용하도록구성된다. 멤브레인(44)이멤브레인을통한방사선빔의통과를허용하고, 오염입자(54)들의통과를방지하도록구성된다. 챔버내부로부터챔버외부로우회경로를따라가스가흐르는것을허용하도록입자포획구조체(52)가구성된다. 우회경로는챔버내부로부터챔버외부로의오염입자(58)들의통과를실질적으로방지하도록구성된다.

公开(公告)号：KR20180031812A

公开(公告)日：2018-03-28

申请号：KR20187007749

申请日：2011-03-17

Applicant: ASML NETHERLANDS BV

Inventor： YAKUNIN ANDREI ,  BANINE VADIM ,  LOOPSTRA ERIK ,  VAN DER SCHOOT HARMEN ,  STEVENS LUCAS ,  VAN KAMPEN MAARTEN

IPC: G03F1/62 ,  C01B32/20 ,  G02B5/08 ,  G02B5/20 ,  G03F1/24 ,  G03F7/20 ,  H01L21/027

CPC classification number: G03F1/64 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/20 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/204 ,  G02B5/208 ,  G02B27/0006 ,  G03B27/54 ,  G03F1/24 ,  G03F1/62 ,  G03F7/70058 ,  G03F7/702 ,  G03F7/70916 ,  G03F7/70958 ,  G03F7/70983 ,  G21K1/062 ,  G21K2201/061 ,  H01B1/04 ,  H01B1/24

Abstract: 리소그래피장치는방사선빔을생성하도록구성된방사선소스, 및패터닝디바이스를지지하도록구성된지지체를포함한다. 패터닝디바이스는패터닝된방사선빔을형성하기위해방사선빔에패턴을부여하도록구성된다. 방사선소스와패터닝디바이스사이에는챔버가위치된다. 챔버는방사선빔을반사시키도록구성된적어도 1 이상의광학구성요소를포함하고, 방사선소스로부터의방사선이이를통과하는것을허용하도록구성된다. 멤브레인(44)이멤브레인을통한방사선빔의통과를허용하고, 오염입자(54)들의통과를방지하도록구성된다. 챔버내부로부터챔버외부로우회경로를따라가스가흐르는것을허용하도록입자포획구조체(52)가구성된다. 우회경로는챔버내부로부터챔버외부로의오염입자(58)들의통과를실질적으로방지하도록구성된다.

Abstract translation: 光刻设备包括被配置为产生辐射束的辐射源。 该光刻设备还包括被配置为支撑图案形成装置的支撑件。 图案形成装置被配置为将辐射束赋予图案以形成图案化的辐射束。 该支撑件提供有包括石墨烯层的薄膜。

公开(公告)号：JP2010087505A

公开(公告)日：2010-04-15

申请号：JP2009213876

申请日：2009-09-16

Applicant: Asml Netherlands Bv ,  エーエスエムエル ネザーランズ ビー.ブイ.

Inventor： LUIGI SCACCABAROZZI ,  BANINE VADIM YEVGENYEVICH ,  KOSTER NORBERTUS BENEDICTUS ,  MOORS JOHANNES HUBERTUS JOSEPHINA ,  VAN KAMPEN MAARTEN ,  RAMASAMY RAJU ,  WAYNE M LYTLE ,  DAVID N RUZIC ,  MARTIN JOHN NEUMANN

IPC: H01L21/027 ,  G03F7/20

CPC classification number: G03F7/70925

Abstract: PROBLEM TO BE SOLVED: To provide a system for performing non contact cleaning of the surface of an object, a lithography device including the system, and a device manufacturing method. SOLUTION: The system may include: a He plasma source contained in a chamber; and a control unit configured so as to correct plasma parameters such as an electronic energy distribution of plasma when used, in order to increase formation of a He metastable atom without correcting operation parameters of the plasma source. The control unit may include an electrical bias unit configured so as to apply a positive bias voltage to the object to pull in a free electron from the plasma. The system is previously mixed with He, or may include a supply source of supplement gas to be supplied from a further gas source. The supplement gas may be selected based on previous knowledge of types of a particle to be expected to be present on the surface of the object. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于对物体的表面进行非接触清洁的系统，包括该系统的光刻设备和设备制造方法。 解决方案：系统可以包括：包含在腔室中的He等离子体源; 以及控制单元，被配置为校正等离子体参数，例如当使用时等离子体的电子能量分布，以便增加He亚稳态原子的形成，而不修正等离子体源的操作参数。 控制单元可以包括电偏置单元，其被配置为向对象施加正偏压以从等离子体中拉出自由电子。 该系统预先与He混合，或者可以包括从另外的气源供应的补充气体的供应源。 补充气体可以基于预期存在于物体表面上的颗粒的类型的先前知识来选择。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：WO2011032768A3

公开(公告)日：2013-03-28

申请号：PCT/EP2010061008

申请日：2010-07-29

Applicant: ASML NETHERLANDS BV ,  YAKUNIN ANDREI ,  VAN KAMPEN MAARTEN ,  TIMOSHKOV VADIM

Inventor： YAKUNIN ANDREI ,  VAN KAMPEN MAARTEN ,  TIMOSHKOV VADIM

IPC: G03F7/20 ,  G02B5/20 ,  G21K1/06

CPC classification number: G03F7/70958 ,  G03F7/70191 ,  G03F7/70575 ,  G03F7/70941

Abstract: A spectral purity filter (100) includes a substrate (111), a plurality of apertures (104) through the substrate (111), and a plurality of walls. The walls define the plurality of apertures (104) through the substrate (111). The spectral purity filter (100) also includes a first layer (112) formed on the substrate to reflect radiation of a first wavelength, and a second layer (113) formed on the first layer (112) to prevent oxidation of the first layer (112). The apertures (104) are constructed and arranged to be able to transmit at least a portion of radiation of a second wavelength there through.

Abstract translation: 光谱纯度滤光器（100）包括基板（111），穿过基板（111）的多个孔（104）和多个壁。 壁限定通过基板（111）的多个孔（104）。 光谱纯度滤光片（100）还包括形成在基板上以反射第一波长的辐射的第一层（112）和形成在第一层（112）上的第二层（113），以防止第一层的氧化 112）。 孔（104）被构造和布置成能够透过第二波长的至少一部分辐射。

公开(公告)号：WO2013127587A3

公开(公告)日：2013-10-24

申请号：PCT/EP2013051657

申请日：2013-01-29

Applicant: ASML NETHERLANDS BV

Inventor： BANINE VADIM ,  FRANKEN JOHANNES ,  KEMPEN ANTONIUS ,  VAN KAMPEN MAARTEN ,  MESTROM WILBERT

IPC: G03F7/20 ,  H05G2/00

CPC classification number: G03F7/70033 ,  G03F7/70916 ,  G03F7/7095 ,  H05G2/003

Abstract: A source collector apparatus includes a plasma generation apparatus arranged to excite a fuel to form a radiation emitting plasma, a collector arranged to collect the radiation, and a contamination receiving apparatus, wherein the contamination receiving apparatus is provided with a porous structure.

Abstract translation: 源极收集器装置包括等离子体产生装置，其被布置成激发燃料以形成辐射发射等离子体，收集辐射的收集器以及污染物接收装置，其中污染物接收装置具有多孔结构。

公开(公告)号：WO2011092020A3

公开(公告)日：2011-09-29

申请号：PCT/EP2011000385

申请日：2011-01-28

Applicant: ZEISS CARL SMT GMBH ,  ASML NETHERLANDS BV ,  EHM DIRK HEINRICH ,  VAN KAMPEN MAARTEN ,  SCHMIDT STEFAN-WOLFGANG ,  BANINE VADIM YEVGENYEVICH ,  LOOPSTRA ERIK

Inventor： EHM DIRK HEINRICH ,  VAN KAMPEN MAARTEN ,  SCHMIDT STEFAN-WOLFGANG ,  BANINE VADIM YEVGENYEVICH ,  LOOPSTRA ERIK

IPC: G01J1/04 ,  G03F7/20

CPC classification number: G03F7/70891 ,  G01J1/58 ,  G02B5/0891 ,  G03F7/70316 ,  G03F7/70558 ,  G03F7/7085 ,  G03F7/70958

Abstract: An arrangement for use in a projection exposure tool (100) for microlithography comprises a reflective optical element (10; 110) and a radiation detector (30; 32; 130). The reflective optical element (10; 110) comprises a carrier element (12) guaranteeing the mechanical strength of the optical element (10; 110) and a reflective coating (18) disposed on the carrier element (12) for reflecting a use radiation (20a). The carrier element (12) is made of a material which upon interaction with the use radiation (20a) emits a secondary radiation (24) the wavelength of which differs from the wavelength of the use radiation (20a), and the radiation detector (30; 32; 130) is configured to detect the secondary radiation (24).

Abstract translation: 一种用于微光刻投影曝光工具（100）的装置包括反射光学元件（10; 110）和辐射检测器（30; 32; 130）。 反射光学元件（10; 110）包括保证光学元件（10; 110）的机械强度的载体元件（12）和设置在载体元件（12）上的反射涂层（18），用于反射使用辐射 20A）。 载体元件（12）由与使用辐射（20a）相互作用时发射波长与使用辐射（20a）的波长不同的次级辐射（24）的材料制成，并且辐射检测器（30 ; 32; 130）被配置为检测所述次级辐射（24）。

公开(公告)号：SG186072A1

公开(公告)日：2013-01-30

申请号：SG2012086955

申请日：2011-03-17

Applicant: ASML NETHERLANDS BV

Inventor： YAKUNIN ANDREI ,  BANINE VADIM ,  LOOPSTRA ERIK ,  VAN DER SCHOOT HARMEN ,  STEVENS LUCAS ,  VAN KAMPEN MAARTEN

IPC: G03F1/24 ,  G03F1/62

Abstract: A lithographic apparatus includes a radiation source configured to produce a radiation beam, and a support configured to support a patterning device. The patterning device is configured to impart the radiation beam with a pattern to form a patterned radiation beam. A chamber is located between the radiation source and patterning device. The chamber contains at least one optical component configured to reflect the radiation beam, and is configured to permit radiation from the radiation source to pass therethrough. A membrane (44) is configured to permit the passage of the radiation beam, and to prevent the passage of contamination particles (54) through the membrane. A particle trapping structure (52) is configured to permit gas to flow along an indirect path from inside the chamber to outside the chamber. The indirect path is configured to substantially prevent the passage of contamination particles (58) from inside the chamber to outside the chamber.