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公开(公告)号:JPH04256461A
公开(公告)日:1992-09-11
申请号:JP14598091
申请日:1991-06-18
Applicant: IBM
Inventor: SUTEIIBUN RINDEII BAADO , DEBITSUDO NOOMAN KURISUTENSEN , JIYON JIYOSEFU GURENINGU , JIEEMUZU ANSONII NIKORETSUTEI , MAAKU UIRIAMU AADANITSUKU
Abstract: PURPOSE: To limit an impingement area, against a substrate, of a treatment fluid which is applied to the substrate to a predetermined region. CONSTITUTION: A device 10 for applying fluid to a substrate 19 includes a head member 11. The head member directs a first fluid such as etchant or the like at a first pressure against the substrate and has a structure for directing a second fluid such as air or the like against the substrate in the area proximate the first fluid directing area at a second pressure which corresponds to the pressure at the location of fluid intersection of the first fluid and the second fluid and the second pressure is equal to or greater than the first pressure, so that the first fluid impinges substantially only on the location desired. Two opposing head member are utilized, these may serve to maintain the substrate there between in a suspended state. Both head members are movable relative to each other during fluid application. The device may be utilized for etching, and also may be used for coating, cleaning, rinsing or the like.
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公开(公告)号:JPH06322547A
公开(公告)日:1994-11-22
申请号:JP21022593
申请日:1993-08-25
Applicant: IBM
Inventor: ARUFURETSUDO BIIBETSUKU , SUTEIIBUN RESURII BUTSUKUUOORU , UIRIAMU AASAA DONSON , JIYON JIYOSEFU GURENINGU , MAATEIN JIYOZEFU GOORUDOBAAGU , KUATO RUUDORUFU GURIIBU , KARORAIN AN KOBATSUKU , RINDA KARORIN MASHIYUU , UOORUTAA POORU PAUROUSUKII , MAAKU JIEFURII SHIYATSUTO , MAIKURU ROI SHIYOIAAMAN , SUTEIIBUN RIIOU TEISUDEIRU
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公开(公告)号:JPH0248666A
公开(公告)日:1990-02-19
申请号:JP14856189
申请日:1989-06-13
Applicant: IBM
Inventor: SUTEIIBUN RINTSU BAADO , KURAUDEIUSU FUEEGAA , JIYON JIYOSEFU GURENINGU , GARESU JIEFURII HOKAMU , SUTEIIBUN AARU MORISU , UOORUTAA POORU PAUROUSUKII , JIYON JIEIMUZU RITSUKO , PIITAA SUROUTA JIYUNIA , RANDEI UIRIAMU SUNAIDAA
IPC: G03F7/26 , C08J7/12 , G03F7/40 , H01L21/306 , H01L21/311 , H05K1/03 , H05K3/00 , H05K3/10
Abstract: PURPOSE: To unnecessitate the use of dangerous or explosive chemicals in etching a polyimide layer by bringing the layer into successive contact with an aq. soln., an acid and a soln. CONSTITUTION: A satisfactorily or practically satisfactorily cured polyimide layer is brought into successive contact with an aq. metal. hydroxide soln., an acid and a metal hydroxide soln. The transfer of chemicals from one bath to other bath by which the service life of the baths is shortened by neutralization is suppressed and slight washing can be carried out.
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