公开(公告)号：JP2000311948A

公开(公告)日：2000-11-07

申请号：JP2000092149

申请日：2000-03-29

Applicant: IBM ,  INFINEON TECHNOLOGIES CORP

Inventor： ARNDT KENNETH C ,  BRINTZINGER AXEL C ,  CONTI RICHARD A ,  COTE DONNA R ,  NARAYAN CHANDRASEKHAR ,  RAMACHANDRAN RAVIKUMAR ,  RUPP THOMAS S ,  SENTEIRU K SURIINIVUASAN

IPC: H01L21/82 ,  H01H69/02 ,  H01H85/00 ,  H01L21/8242 ,  H01L23/525 ,  H01L27/108

Abstract: PROBLEM TO BE SOLVED: To provide a method and structure for generating a void fuse structure on a gate conductor stack. SOLUTION: A semiconductor substrate is provided, wherein a gate conductor stack 32 is provided on a shallow trench isolation region. Oxide layers 33 and 34 are formed on a substrate around the gate conductor stack 32, and an electric contact opening part etched to the substrate down to the oxide layer is filled with a first conductive material 40, establishing electric contact to the gate conductor stack. A conductive layer 41 of a second conductive material is allowed to stick to the oxide layer and the electric contact, and the oxide layer is anisotropically etched so that at least one etching hole, as far as the shallow trench isolation region through the oxide layer, is formed. A part 60 around the least the etching hole of the oxide layer is isotropically etched to form a void under at least a part of a conductive player pattern. The gate conductor stack comprises a fuse.

公开(公告)号：WO0199181A2

公开(公告)日：2001-12-27

申请号：PCT/US0119241

申请日：2001-06-14

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： RAMACHANDRAN RAVIKUMAR ,  NAGEL NICOLAS ,  PARKS CHRISTOPHER

IPC: H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/8242

CPC classification number: H01L21/76849 ,  H01L21/02074 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/76861 ,  H01L21/7687 ,  H01L27/10855

Abstract: A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.

Abstract translation: 根据本发明的用于清洁氧化的扩散阻挡层的方法包括提供用于防止氧和金属扩散的导电扩散阻挡层（26），并提供包括氢氟酸的湿化学蚀刻剂（湿蚀刻）。 用湿化学蚀刻剂蚀刻扩散阻挡层（26），以从扩散阻挡层去除氧化物，使得通过使用湿式化学蚀刻剂，通过扩散阻挡层实现线性电性能。

公开(公告)号：WO0249090A3

公开(公告)日：2003-05-01

申请号：PCT/US0144921

申请日：2001-11-29

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： ECONOMIKOS LAERTIS ,  RAMACHANDRAN RAVIKUMAR ,  SIMPSON ALEXANDER

IPC: H01L21/3105

CPC classification number: H01L21/31053

Abstract: A method for polishing a dielectric layer containing silicon (16) provides a fluorine-based compound (34) during a polishing process. The dielectric layer is polished in the presence of the fluorine based compound to accelerate a polishing rate of the dielectric layer.

Abstract translation: 用于抛光含硅（16）的电介质层的方法在抛光过程中提供氟基化合物（34）。 在氟基化合物的存在下对电介质层进行研磨，以加速电介质层的研磨速度。

公开(公告)号：WO0199170A3

公开(公告)日：2002-05-02

申请号：PCT/US0119656

申请日：2001-06-20

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM ,  TOSHIBA KK

Inventor： NOJO HARUKI ,  PANDEY SUMIT ,  STEPHENS JEREMY ,  RAMACHANDRAN RAVIKUMAR

IPC: C09G1/02 ,  H01L21/3105 ,  C09G1/00

CPC classification number: H01L21/31053 ,  C09G1/02

Abstract: An aqueous based ceria slurry system and method for chemical mechanical polishing of semiconductor wafers, the slurry comprising less than 5 wt % abrasive cerium oxide particles and up to about the critical micelle concentration of a cationic surfactant, absent other abrasives, in a neutral to alkaline pH solution is disclosed. Also disclosed is slurry comprising a blend of surfactants including a pre-existing amount of anionic surfactant and an added amount of cationic and/or non-ionic surfactant.

Abstract translation: 一种用于半导体晶片的化学机械抛光的水性二氧化铈浆料系统和方法，所述浆料包含小于5重量％的磨料氧化铈颗粒，并且高达约临界胶束浓度的阳离子表面活性剂，没有其它研磨剂，在中性至碱性 公开了pH溶液。 还公开了包含表面活性剂的共混物的浆料，其包括预先存在量的阴离子表面活性剂和加入量的阳离子和/或非离子表面活性剂。

公开(公告)号：DE60003703T2

公开(公告)日：2004-04-22

申请号：DE60003703

申请日：2000-09-05

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： NOJO HARUKI ,  SCHUTZ J ,  RAMACHANDRAN RAVIKUMAR

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105

Abstract: An aqueous slurry-less composition for chemical-mechanical-polishing of a silicon dioxide workpiece comprising: a cationic surfactant that is soluble and ionized at neutral to alkaline pH conditions, in which the cationic surfactant is present in an aqueous slurry-less composition in an amount less than its critical micelle concentration.

公开(公告)号：DE60003703D1

公开(公告)日：2003-08-07

申请号：DE60003703

申请日：2000-09-05

Applicant: INFINEON TECHNOLOGIES CORP ,  IBM

Inventor： NOJO HARUKI ,  SCHUTZ J ,  RAMACHANDRAN RAVIKUMAR

IPC: B24B37/00 ,  C09G1/02 ,  H01L21/304 ,  H01L21/3105

Abstract: An aqueous slurry-less composition for chemical-mechanical-polishing of a silicon dioxide workpiece comprising: a cationic surfactant that is soluble and ionized at neutral to alkaline pH conditions, in which the cationic surfactant is present in an aqueous slurry-less composition in an amount less than its critical micelle concentration.

公开(公告)号：WO0210480A3

公开(公告)日：2002-10-31

申请号：PCT/US0123905

申请日：2001-07-30

Applicant: INFINEON TECHNOLOGIES CORP

Inventor： RAMACHANDRAN RAVIKUMAR ,  PENNER KLAUS ,  NICHTERWITZ MARION ,  NITSCHKE CHRISTIANE ,  KRAUSE HOLGE

IPC: C09K13/08 ,  C23F1/18 ,  C23F1/20 ,  G03F7/42 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3213 ,  C23G1/00 ,  G01N1/00

CPC classification number: H01L21/02071 ,  C09K13/08 ,  C11D3/3942 ,  C11D3/3947 ,  C11D7/08 ,  C11D11/0047 ,  C23F1/00 ,  C23F1/18 ,  C23F1/20 ,  G03F7/423 ,  G03F7/426 ,  H01L21/02052 ,  H01L21/02063

Abstract: A process for providing an aqueous back-end-of-line (BEOL) clean with feed-back control to monitor the active component of HF in the clean, for a wiring/interconnect of a reactive ion etched semiconductor device, comprising: subjecting the reactive ion etched semiconductor device to a post metal RIE clean using an etchant composition comprising about 0.01 to about 15 percent by weight of sulfuric acid; about 0.1 to about 100 ppm of a fluoride containing compound; and a member selected from the group consisting of about 0.01 to about 20 percent by weight of hydrogen peroxide or about 1 to about 30 ppm of ozone, comprising: a) mixing water, sulfuric acid and hydrogen peroxide in a mixing tank; b) mixing HF directly into the mixing tank or adding HF into a separate vessel for wafer processing, either before, during or after the mixture water, sulfuric acid and hydrogen peroxide as a mixture is transported to the separate tank for wafer processing; c) taking a sample comprising HR from the mixing tank or HF from the wafer processing tank and sending the sample through a feedback loop; d) comprising the sample to a standard dilute solution of HF to obtain a value of HF concentration in the sample; e) inputting the value to a tank tool recipe control to cause any needed adjustment in concentration of HF to a predetermined range, either in the mixing tank or the wafer processing vessel; and f) subjecting the wiring/interconnect of the semiconductor device to etching by the etchant composition to remove sidewall polymer, polymer rails and via residue without etching conductive materials during removal of sidewall polymer, polymer rails, and via residue.

Abstract translation: 一种用于反馈控制以提供水性生产线后端（BEOL）清洁的方法，用于监视清洁过程中HF的活性成分，用于反应离子蚀刻半导体器件的布线/互连，包括：使所述 使用包含约0.01重量％至约15重量％的硫酸的蚀刻剂组合物对所述反应离子蚀刻的半导体器件进行后金属RIE清洁; 约0.1至约100ppm的含氟化合物; 和选自约0.01至约20重量％的过氧化氢或约1至约30ppm的臭氧的成员，包括：a）在混合罐中混合水，硫酸和过氧化氢; b）将HF直接混入混合罐或将HF加入单独的容器中用于晶片处理，或者在混合物水之前，之中或之后，将硫酸和过氧化氢混合物输送到单独的罐中进行晶片处理; c）从混合罐中取出包含HR的样品或从晶片处理罐取出HF，并通过反馈回路发送样品; d）将样品包含在HF的标准稀释溶液中以获得样品中HF浓度的值; e）将该值输入到罐工具配方控制中，以在混合罐或晶圆处理容器中引起HF浓度到预定范围的任何需要的调整; 以及f）在除去侧壁聚合物，聚合物轨道和通孔残留物期间，不蚀刻导电材料，通过蚀刻剂组合物对半导体器件的布线/互连进行蚀刻以去除侧壁聚合物，聚合物轨道和通孔残余物。

公开(公告)号：EP2377148A4

公开(公告)日：2016-03-16

申请号：EP09836605

申请日：2009-11-19

Applicant: IBM ,  FREESCALE SEMICONDUCTOR INC

Inventor： RAMACHANDRAN RAVIKUMAR ,  YAN HONGWEN ,  MOUMEN NAIM ,  SCHAEFFER JAMES KENYON ,  KRISHNAN SIDDARTH A ,  WONG KEITH KWONG HON ,  KWON UNOH ,  BELYANSKY MICHAEL P ,  WISE RICHARD

IPC: H01L21/3205 ,  H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/823857

公开(公告)号：EP2419925A4

公开(公告)日：2016-03-30

申请号：EP10765059

申请日：2010-04-14

Applicant: IBM

Inventor： CHUDZIK MICHAEL P ,  HENSON WILLIAM K ,  JHA RASHMI ,  LIANG YUE ,  RAMACHANDRAN RAVIKUMAR ,  WISE RICHARD S

IPC: H01L21/8238 ,  H01L21/28 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/517 ,  H01L21/28185 ,  H01L21/823842 ,  H01L21/823857 ,  H01L29/49 ,  H01L29/7833

Abstract: The present invention, in one embodiment, provides a method of forming a semiconductor device that includes providing a substrate including a first conductivity type region and a second conductivity type region; forming a gate stack including a gate dielectric atop the first conductivity type region and the second conductivity type region of the substrate and a first metal gate conductor overlying the high-k gate dielectric; removing a portion of the first metal gate conductor that is present in the first conductivity type region to expose the gate dielectric present in the first conductivity type region; applying a nitrogen based plasma to the substrate, wherein the nitrogen based plasma nitrides the gate dielectric that is present in the first conductivity type region and nitrides the first metal gate conductor that is present in the second conductivity type region; and forming a second metal gate conductor overlying at least the gate dielectric that is present in the first conductivity type region.

公开(公告)号：JPH11102890A

公开(公告)日：1999-04-13

申请号：JP19685398

申请日：1998-07-13

Applicant: IBM ,  SIEMENS AG

Inventor： AKATSU HIROYUKI ,  HOYER RONALD ,  RAMACHANDRAN RAVIKUMAR

IPC: H01L21/304 ,  H01L21/306

Abstract: PROBLEM TO BE SOLVED: To prevent the formation of watermarks on a wafer after it has dried up by a method, wherein the wafer is rinsed by deionized water before it is dried up, then the wafer is rinsed by the first and the second organic solvents, and water is mixed into the solution. SOLUTION: When a silicon substrate is exposed to long-chain alcohol, for example, by conducting an exposing process wherein dipping, rinsing and spraying operations are performed, the density of water on the surface of the silicon substrate is reduced sharply. Then, the long-chain alcohol is removed by rinsing with other solution such as short-chain alcohol, for example. Higher class alcohol is dissolved by low class alcohol. Accordingly, higher class alcohol is removed from the surface of the silicon substrate when the silicon substrate is put in an isopropanol drier, for example. Then, water is removed from the surface of the substrate in a substrate drying process. The quantity of water remaining on the surface of the silicon substrate is reduced sharply by performing a process in which the substrate is dipped into alcohol. As a result, the formation of watermarks on wafer surface can be reduced sharply.